DE69414929D1 - Leiterrahmen für eine integrierte Schaltungsanordnung - Google Patents

Leiterrahmen für eine integrierte Schaltungsanordnung

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Publication number
DE69414929D1
DE69414929D1 DE69414929T DE69414929T DE69414929D1 DE 69414929 D1 DE69414929 D1 DE 69414929D1 DE 69414929 T DE69414929 T DE 69414929T DE 69414929 T DE69414929 T DE 69414929T DE 69414929 D1 DE69414929 D1 DE 69414929D1
Authority
DE
Germany
Prior art keywords
integrated circuit
lead frame
circuit arrangement
arrangement
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69414929T
Other languages
English (en)
Other versions
DE69414929T2 (de
Inventor
Joseph Anthony Abys
Igor Veljko Kadija
Jr Edward John Kudrak
Jr Joseph John Maisano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69414929D1 publication Critical patent/DE69414929D1/de
Application granted granted Critical
Publication of DE69414929T2 publication Critical patent/DE69414929T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • H01L2924/181—Encapsulation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/929—Electrical contact feature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12875—Platinum group metal-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
DE1994614929 1993-07-29 1994-07-20 Leiterrahmen für eine integrierte Schaltungsanordnung Expired - Lifetime DE69414929T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/099,118 US5360991A (en) 1993-07-29 1993-07-29 Integrated circuit devices with solderable lead frame

Publications (2)

Publication Number Publication Date
DE69414929D1 true DE69414929D1 (de) 1999-01-14
DE69414929T2 DE69414929T2 (de) 1999-06-02

Family

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DE1994614929 Expired - Lifetime DE69414929T2 (de) 1993-07-29 1994-07-20 Leiterrahmen für eine integrierte Schaltungsanordnung

Country Status (13)

Country Link
US (1) US5360991A (de)
EP (1) EP0637082B1 (de)
JP (1) JP2746840B2 (de)
KR (1) KR100286151B1 (de)
CN (1) CN1050935C (de)
CA (1) CA2115732C (de)
DE (1) DE69414929T2 (de)
DK (1) DK0637082T3 (de)
ES (1) ES2125411T3 (de)
HK (1) HK1004872A1 (de)
MY (1) MY111899A (de)
SG (1) SG44354A1 (de)
TW (1) TW230274B (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714962A (ja) * 1993-04-28 1995-01-17 Mitsubishi Shindoh Co Ltd リードフレーム材およびリードフレーム
US5728285A (en) * 1993-12-27 1998-03-17 National Semiconductor Corporation Protective coating combination for lead frames
US5650661A (en) * 1993-12-27 1997-07-22 National Semiconductor Corporation Protective coating combination for lead frames
KR970011623B1 (en) * 1994-01-13 1997-07-12 Samsung Electronics Co Ltd Lead frame of semiconductor package
TW344109B (en) * 1994-02-10 1998-11-01 Hitachi Ltd Methods of making semiconductor devices
US6686226B1 (en) 1994-02-10 2004-02-03 Hitachi, Ltd. Method of manufacturing a semiconductor device a ball grid array package structure using a supporting frame
US5437096A (en) * 1994-02-28 1995-08-01 Technical Materials, Inc. Method for making a multilayer metal leadframe
US5454929A (en) * 1994-06-16 1995-10-03 National Semiconductor Corporation Process for preparing solderable integrated circuit lead frames by plating with tin and palladium
US5455446A (en) * 1994-06-30 1995-10-03 Motorola, Inc. Leaded semiconductor package having temperature controlled lead length
DE4431847C5 (de) * 1994-09-07 2011-01-27 Atotech Deutschland Gmbh Substrat mit bondfähiger Beschichtung
US6066514A (en) * 1996-10-18 2000-05-23 Micron Technology, Inc. Adhesion enhanced semiconductor die for mold compound packaging
US5583372A (en) * 1994-09-14 1996-12-10 Micron Technology, Inc. Adhesion enhanced semiconductor die for mold compound packaging
KR960039315A (ko) * 1995-04-06 1996-11-25 이대원 리드프레임 제조방법
US5675177A (en) * 1995-06-26 1997-10-07 Lucent Technologies Inc. Ultra-thin noble metal coatings for electronic packaging
US5817544A (en) * 1996-01-16 1998-10-06 Olin Corporation Enhanced wire-bondable leadframe
KR0183645B1 (ko) * 1996-03-26 1999-03-20 이대원 다층 구조의 도금층을 구비한 반도체 리드 프레임
US5916696A (en) * 1996-06-06 1999-06-29 Lucent Technologies Inc. Conformable nickel coating and process for coating an article with a conformable nickel coating
TW335526B (en) * 1996-07-15 1998-07-01 Matsushita Electron Co Ltd A semiconductor and the manufacturing method
US6140703A (en) * 1996-08-05 2000-10-31 Motorola, Inc. Semiconductor metallization structure
KR100231828B1 (ko) * 1997-02-20 1999-12-01 유무성 다층 도금 리드프레임
US6521358B1 (en) 1997-03-04 2003-02-18 Matsushita Electric Industrial Co., Ltd. Lead frame for semiconductor device and method of producing same
US6180999B1 (en) * 1997-08-29 2001-01-30 Texas Instruments Incorporated Lead-free and cyanide-free plating finish for semiconductor lead frames
KR100493187B1 (ko) * 1997-11-13 2005-09-06 삼성테크윈 주식회사 건식도금법을이용한리드프레임과그제조방법
CN1134839C (zh) * 1997-12-26 2004-01-14 三星航空产业株式会社 引线框架及涂敷引线框架的方法
ES2171088T3 (es) 1998-06-10 2002-08-16 Heraeus Gmbh W C Procedimiento para producir un sustrato exento de plomo.
JP2000003988A (ja) * 1998-06-15 2000-01-07 Sony Corp リードフレームおよび半導体装置
US20030011048A1 (en) * 1999-03-19 2003-01-16 Abbott Donald C. Semiconductor circuit assembly having a plated leadframe including gold selectively covering areas to be soldered
DE19921867C2 (de) * 1999-05-11 2001-08-30 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauelements mit mindestens einem verkapselten Chip auf einem Substrat
US6232651B1 (en) 1999-05-21 2001-05-15 Samsung Aerospace Industries, Ltd. Lead frame for semiconductor device
US7174626B2 (en) 1999-06-30 2007-02-13 Intersil Americas, Inc. Method of manufacturing a plated electronic termination
US6469386B1 (en) * 1999-10-01 2002-10-22 Samsung Aerospace Industries, Ltd. Lead frame and method for plating the same
KR100450090B1 (ko) * 1999-10-01 2004-09-30 삼성테크윈 주식회사 반도체 팩키지의 리드프레임과 이 리드 프레임의 도금방법
US6953986B2 (en) * 1999-12-10 2005-10-11 Texas Instruments Incorporated Leadframes for high adhesion semiconductor devices and method of fabrication
US6838757B2 (en) * 2000-07-07 2005-01-04 Texas Instruments Incorporated Preplating of semiconductor small outline no-lead leadframes
US6452258B1 (en) 2000-11-06 2002-09-17 Lucent Technologies Inc. Ultra-thin composite surface finish for electronic packaging
US6538325B2 (en) * 2001-03-06 2003-03-25 Delphi Technologies, Inc. Multi-layer conductor system with intermediate buffer layer for improved adhesion to dielectrics
JP3854889B2 (ja) * 2001-04-19 2006-12-06 キヤノン株式会社 金属または金属化合物パターンの製造方法および電子源の製造方法
AU2002310875A1 (en) * 2001-04-23 2002-11-05 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Support for electrical circuit elements
WO2003027689A1 (en) 2001-09-24 2003-04-03 Rika Electronics International Electrical test probes and methods of making the same
JP4136845B2 (ja) * 2002-08-30 2008-08-20 富士電機ホールディングス株式会社 半導体モジュールの製造方法
US6984358B2 (en) * 2002-09-13 2006-01-10 Lockheed Martin Corporation Diffusion bonding process of two-phase metal alloys
DE10333439A1 (de) * 2003-07-23 2005-02-17 Robert Bosch Gmbh Verfahren zur Herstellung eines aus mehreren Verdrahtungsebenen bestehenden Hybrid-Produktes
US7309909B2 (en) * 2005-09-21 2007-12-18 Texas Instruments Incorporated Leadframes for improved moisture reliability of semiconductor devices
JP4820616B2 (ja) * 2005-10-20 2011-11-24 パナソニック株式会社 リードフレーム
US7535086B2 (en) * 2006-08-03 2009-05-19 Stats Chippac Ltd. Integrated circuit package-on-package stacking system
JP2010045140A (ja) * 2008-08-11 2010-02-25 Nec Electronics Corp リードフレーム、リードフレームの製造方法及び半導体装置の製造方法
WO2010085319A1 (en) * 2009-01-22 2010-07-29 Aculon, Inc. Lead frames with improved adhesion to plastic encapsulant
CN102244976B (zh) * 2011-04-22 2013-07-31 杭州威利广光电科技股份有限公司 适于金线键合的bt线路板合金镀层
US8574722B2 (en) * 2011-05-09 2013-11-05 Tyco Electronics Corporation Corrosion resistant electrical conductor
US9224550B2 (en) 2012-12-26 2015-12-29 Tyco Electronics Corporation Corrosion resistant barrier formed by vapor phase tin reflow
EP3217424B1 (de) * 2014-11-07 2019-04-17 Nippon Steel & Sumitomo Metal Corporation Elektrisch leitfähige anordnung für elektronische komponente, halbleiterbauelement mit der anordnung und verfahren zur herstellung einer elektrisch leitfähigen anordnung
JP7069657B2 (ja) * 2017-11-15 2022-05-18 昭和電工マテリアルズ株式会社 ネガ型感光性樹脂組成物及び半導体装置部材の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB250146A (en) * 1926-01-06 1926-04-08 Joseph Coggans An improved ceiling plate for electric lamp fittings
GB335608A (en) * 1929-06-27 1930-09-29 Wood Newspaper Mach Corp Improvements in and relating to web folding and associating machines
US4268849A (en) * 1978-11-03 1981-05-19 National Semiconductor Corporation Raised bonding pad
CH673811A5 (de) * 1986-11-19 1990-04-12 Schlatter Buchbinderei
EP0335608B1 (de) * 1988-03-28 1995-06-14 Texas Instruments Incorporated Leiterrahmen mit verminderter Korrosion
US4911798A (en) * 1988-12-20 1990-03-27 At&T Bell Laboratories Palladium alloy plating process
US4917967A (en) * 1989-01-13 1990-04-17 Avon Products, Inc. Multiple-layered article and method of making same
EP0384586A3 (de) * 1989-02-22 1991-03-06 Texas Instruments Incorporated Hoch zuverlässige Plastikverpackung für integrierte Schaltung
US4911799A (en) * 1989-08-29 1990-03-27 At&T Bell Laboratories Electrodeposition of palladium films
JP2543619B2 (ja) * 1990-09-05 1996-10-16 新光電気工業株式会社 半導体装置用リ―ドフレ―ム
US5178745A (en) * 1991-05-03 1993-01-12 At&T Bell Laboratories Acidic palladium strike bath

Also Published As

Publication number Publication date
JP2746840B2 (ja) 1998-05-06
CN1103204A (zh) 1995-05-31
CN1050935C (zh) 2000-03-29
JPH07169901A (ja) 1995-07-04
MY111899A (en) 2001-02-28
KR950004511A (ko) 1995-02-18
DE69414929T2 (de) 1999-06-02
CA2115732A1 (en) 1995-01-30
US5360991A (en) 1994-11-01
TW230274B (en) 1994-09-11
DK0637082T3 (da) 1999-08-16
HK1004872A1 (en) 1998-12-11
SG44354A1 (en) 1997-12-19
KR100286151B1 (ko) 2001-05-02
CA2115732C (en) 1997-12-09
EP0637082B1 (de) 1998-12-02
EP0637082A1 (de) 1995-02-01
ES2125411T3 (es) 1999-03-01

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