DE69413601D1 - Halbleiteranordnung mit einem Halbleiterelement von Flip-Chip-Typ - Google Patents

Halbleiteranordnung mit einem Halbleiterelement von Flip-Chip-Typ

Info

Publication number
DE69413601D1
DE69413601D1 DE69413601T DE69413601T DE69413601D1 DE 69413601 D1 DE69413601 D1 DE 69413601D1 DE 69413601 T DE69413601 T DE 69413601T DE 69413601 T DE69413601 T DE 69413601T DE 69413601 D1 DE69413601 D1 DE 69413601D1
Authority
DE
Germany
Prior art keywords
semiconductor
flip
chip type
arrangement
semiconductor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69413601T
Other languages
English (en)
Other versions
DE69413601T2 (de
Inventor
Patrice Gamand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69413601D1 publication Critical patent/DE69413601D1/de
Application granted granted Critical
Publication of DE69413601T2 publication Critical patent/DE69413601T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
  • Waveguides (AREA)
DE69413601T 1993-05-18 1994-05-11 Halbleiteranordnung mit einem Halbleiterelement von Flip-Chip-Typ Expired - Fee Related DE69413601T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9305996 1993-05-18

Publications (2)

Publication Number Publication Date
DE69413601D1 true DE69413601D1 (de) 1998-11-05
DE69413601T2 DE69413601T2 (de) 1999-05-12

Family

ID=9447257

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413601T Expired - Fee Related DE69413601T2 (de) 1993-05-18 1994-05-11 Halbleiteranordnung mit einem Halbleiterelement von Flip-Chip-Typ

Country Status (4)

Country Link
US (1) US5635762A (de)
EP (1) EP0627765B1 (de)
JP (1) JP3487639B2 (de)
DE (1) DE69413601T2 (de)

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DE4432727C1 (de) * 1994-09-14 1996-03-14 Siemens Ag Integrierte Schaltungsstruktur mit einem aktiven Mikrowellenbauelement und mindestens einem passiven Bauelement
US6094114A (en) * 1994-09-26 2000-07-25 Endgate Corporation Slotline-to-slotline mounted flip chip
US5978666A (en) * 1994-09-26 1999-11-02 Endgate Corporation Slotline-mounted flip chip structures
US6265937B1 (en) 1994-09-26 2001-07-24 Endgate Corporation Push-pull amplifier with dual coplanar transmission line
US5983089A (en) * 1994-09-26 1999-11-09 Endgate Corporation Slotline-mounted flip chip
US6150716A (en) * 1995-01-25 2000-11-21 International Business Machines Corporation Metal substrate having an IC chip and carrier mounting
US5550518A (en) * 1995-06-12 1996-08-27 Endgate Corporation Miniature active conversion between microstrip and coplanar wave guide
DE69712562T2 (de) * 1996-02-28 2002-12-19 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem auf einen Träger gelöteten Chip mit Durchgangsleitungen und Herstellungsverfahren dafür
JPH09321175A (ja) * 1996-05-30 1997-12-12 Oki Electric Ind Co Ltd マイクロ波回路及びチップ
US5821815A (en) * 1996-09-25 1998-10-13 Endgate Corporation Miniature active conversion between slotline and coplanar waveguide
HUP9701377A3 (en) * 1997-01-15 2000-01-28 Ibm Case and method for mouting an ic chip onto a carrier board or similar
US6175287B1 (en) * 1997-05-28 2001-01-16 Raytheon Company Direct backside interconnect for multiple chip assemblies
JP3496752B2 (ja) 1998-02-19 2004-02-16 シャープ株式会社 マイクロ波・ミリ波装置
EP0948049A1 (de) * 1998-03-03 1999-10-06 Ching-Kuang Tzuang Gehäuse für integrierte Mikrowellen- oder Millimeterwellen-Schaltung im Zweifachmodus
US6033489A (en) * 1998-05-29 2000-03-07 Fairchild Semiconductor Corp. Semiconductor substrate and method of making same
JP2000216343A (ja) * 1999-01-27 2000-08-04 Nec Corp 半導体集積回路
US6118357A (en) * 1999-02-15 2000-09-12 Trw Inc. Wireless MMIC chip packaging for microwave and millimeterwave frequencies
KR100513709B1 (ko) * 1999-03-31 2005-09-07 삼성전자주식회사 전압제어발진기의 위상 잡음 감소용 공동공진기 및 그 제작방법
US6184570B1 (en) * 1999-10-28 2001-02-06 Ericsson Inc. Integrated circuit dies including thermal stress reducing grooves and microelectronic packages utilizing the same
US6507110B1 (en) 2000-03-08 2003-01-14 Teledyne Technologies Incorporated Microwave device and method for making same
JP2002026012A (ja) * 2000-07-05 2002-01-25 Murata Mfg Co Ltd 半導体装置及びその製造方法
JP3462166B2 (ja) * 2000-09-08 2003-11-05 富士通カンタムデバイス株式会社 化合物半導体装置
US6671948B2 (en) 2000-12-18 2004-01-06 General Electric Company Interconnection method using an etch stop
JP3674780B2 (ja) * 2001-11-29 2005-07-20 ユーディナデバイス株式会社 高周波半導体装置
TW584950B (en) 2001-12-31 2004-04-21 Megic Corp Chip packaging structure and process thereof
TW544882B (en) 2001-12-31 2003-08-01 Megic Corp Chip package structure and process thereof
US6673698B1 (en) 2002-01-19 2004-01-06 Megic Corporation Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers
TW517361B (en) 2001-12-31 2003-01-11 Megic Corp Chip package structure and its manufacture process
TW503496B (en) 2001-12-31 2002-09-21 Megic Corp Chip packaging structure and manufacturing process of the same
AU2003214524A1 (en) * 2002-04-11 2003-10-20 Koninklijke Philips Electronics N.V. Method of manufacturing an electronic device
US6933603B2 (en) * 2002-07-11 2005-08-23 Teledyne Technologies Incorporated Multi-substrate layer semiconductor packages and method for making same
FR2847726B1 (fr) * 2002-11-27 2005-03-04 St Microelectronics Sa Module radiofrequence
US6774482B2 (en) * 2002-12-27 2004-08-10 International Business Machines Corporation Chip cooling
DE10356885B4 (de) * 2003-12-03 2005-11-03 Schott Ag Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement
US7656236B2 (en) 2007-05-15 2010-02-02 Teledyne Wireless, Llc Noise canceling technique for frequency synthesizer
EP2097920B1 (de) * 2007-07-23 2017-08-09 TRUMPF Hüttinger GmbH + Co. KG Plasmaversorgungseinrichtung
US8179045B2 (en) 2008-04-22 2012-05-15 Teledyne Wireless, Llc Slow wave structure having offset projections comprised of a metal-dielectric composite stack
WO2011066863A1 (en) * 2009-12-03 2011-06-09 Epcos Ag Semiconductor chip with backside metallization and arrangement of said chip on a carrier
US8623699B2 (en) * 2010-07-26 2014-01-07 General Electric Company Method of chip package build-up
CN103328549B (zh) * 2011-01-18 2017-05-03 日立化成株式会社 预浸料及使用了该预浸料的层压板以及印制线路板
US9202660B2 (en) 2013-03-13 2015-12-01 Teledyne Wireless, Llc Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes
CN104141491B (zh) * 2014-07-10 2017-04-05 长江大学 一种基于共面微带传输线法井下原油含水率检测装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3377960D1 (en) * 1982-06-30 1988-10-13 Fujitsu Ltd A field-effect semiconductor device
US4992764A (en) * 1989-02-21 1991-02-12 Hittite Microwave Corporation High-power FET circuit
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
JP2843658B2 (ja) * 1990-08-02 1999-01-06 東レ・ダウコーニング・シリコーン株式会社 フリップチップ型半導体装置
FR2665574B1 (fr) * 1990-08-03 1997-05-30 Thomson Composants Microondes Procede d'interconnexion entre un circuit integre et un circuit support, et circuit integre adapte a ce procede.
JP3130575B2 (ja) * 1991-07-25 2001-01-31 日本電気株式会社 マイクロ波ミリ波送受信モジュール
US5156998A (en) * 1991-09-30 1992-10-20 Hughes Aircraft Company Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal barrier layer to block migration of tin through via holes

Also Published As

Publication number Publication date
EP0627765A1 (de) 1994-12-07
JPH0714888A (ja) 1995-01-17
US5635762A (en) 1997-06-03
JP3487639B2 (ja) 2004-01-19
EP0627765B1 (de) 1998-09-30
DE69413601T2 (de) 1999-05-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee