DE69401210D1 - Kollimator mit integrierter Reaktivgasverteilung für Kathodenzerstäubungsanlage - Google Patents

Kollimator mit integrierter Reaktivgasverteilung für Kathodenzerstäubungsanlage

Info

Publication number
DE69401210D1
DE69401210D1 DE69401210T DE69401210T DE69401210D1 DE 69401210 D1 DE69401210 D1 DE 69401210D1 DE 69401210 T DE69401210 T DE 69401210T DE 69401210 T DE69401210 T DE 69401210T DE 69401210 D1 DE69401210 D1 DE 69401210D1
Authority
DE
Germany
Prior art keywords
collimator
gas distribution
reactive gas
cathode sputtering
sputtering systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69401210T
Other languages
English (en)
Other versions
DE69401210T2 (de
Inventor
Andrew Barada
Steven Hurwitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of DE69401210D1 publication Critical patent/DE69401210D1/de
Application granted granted Critical
Publication of DE69401210T2 publication Critical patent/DE69401210T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69401210T 1993-05-11 1994-05-11 Kollimator mit integrierter Reaktivgasverteilung für Kathodenzerstäubungsanlage Expired - Fee Related DE69401210T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/060,315 US5346601A (en) 1993-05-11 1993-05-11 Sputter coating collimator with integral reactive gas distribution
PCT/US1994/005248 WO1994026949A1 (en) 1993-05-11 1994-05-11 Sputter coating collimator with integral reactive gas distribution

Publications (2)

Publication Number Publication Date
DE69401210D1 true DE69401210D1 (de) 1997-01-30
DE69401210T2 DE69401210T2 (de) 1997-04-10

Family

ID=22028722

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401210T Expired - Fee Related DE69401210T2 (de) 1993-05-11 1994-05-11 Kollimator mit integrierter Reaktivgasverteilung für Kathodenzerstäubungsanlage

Country Status (8)

Country Link
US (1) US5346601A (de)
EP (1) EP0698128B1 (de)
JP (1) JPH08510296A (de)
AU (1) AU6831494A (de)
CA (1) CA2156716A1 (de)
DE (1) DE69401210T2 (de)
TW (1) TW243536B (de)
WO (1) WO1994026949A1 (de)

Families Citing this family (20)

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Publication number Priority date Publication date Assignee Title
US5928771A (en) * 1995-05-12 1999-07-27 Diamond Black Technologies, Inc. Disordered coating with cubic boron nitride dispersed therein
US5591313A (en) * 1995-06-30 1997-01-07 Tabco Technologies, Inc. Apparatus and method for localized ion sputtering
EP0766304A2 (de) * 1995-09-29 1997-04-02 AT&T Corp. Verfahren zum Beschichten heterogener Substrate mit homogenen Lagen
US5985102A (en) * 1996-01-29 1999-11-16 Micron Technology, Inc. Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using
US5705042A (en) * 1996-01-29 1998-01-06 Micron Technology, Inc. Electrically isolated collimator and method
US6287436B1 (en) 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
KR100340174B1 (ko) * 1999-04-06 2002-06-12 이동준 전기화학적 바이오센서 테스트 스트립, 그 제조방법 및 전기화학적 바이오센서
US6352626B1 (en) 1999-04-19 2002-03-05 Von Zweck Heimart Sputter ion source for boron and other targets
WO2007118204A2 (en) * 2006-04-06 2007-10-18 Applied Materials, Inc. Reactive sputtering zinc oxide transparent conductive oxides onto large area substrates
US20070235320A1 (en) 2006-04-06 2007-10-11 Applied Materials, Inc. Reactive sputtering chamber with gas distribution tubes
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
KR101603180B1 (ko) 2007-08-02 2016-03-15 어플라이드 머티어리얼스, 인코포레이티드 박막 반도체 물질들을 이용하는 박막 트랜지스터들
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
WO2009117438A2 (en) * 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
US7988470B2 (en) * 2009-09-24 2011-08-02 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride TFTs using wet process for source-drain metal etch
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US11851751B2 (en) * 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method

Family Cites Families (27)

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Publication number Priority date Publication date Assignee Title
US3595773A (en) * 1965-12-17 1971-07-27 Euratom Process for depositing on surfaces
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
US4364995A (en) * 1981-02-04 1982-12-21 Minnesota Mining And Manufacturing Company Metal/metal oxide coatings
FR2538987A1 (fr) * 1983-01-05 1984-07-06 Commissariat Energie Atomique Enceinte pour le traitement et notamment la gravure de substrats par la methode du plasma reactif
DE3331707A1 (de) * 1983-09-02 1985-03-21 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum reaktiven aufstaeuben von verbindungen von metallen und halbleitern
JPS6074626A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
US4534816A (en) * 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
JPS6175514A (ja) * 1984-09-21 1986-04-17 Hitachi Ltd 処理装置
US4793975A (en) * 1985-05-20 1988-12-27 Tegal Corporation Plasma Reactor with removable insert
JPS627855A (ja) * 1985-07-05 1987-01-14 Hitachi Ltd スパツタリング装置
JPH0812856B2 (ja) * 1986-01-17 1996-02-07 株式会社日立製作所 プラズマ処理方法および装置
GB8622820D0 (en) * 1986-09-23 1986-10-29 Nordiko Ltd Electrode assembly & apparatus
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
JPH0660391B2 (ja) * 1987-06-11 1994-08-10 日電アネルバ株式会社 スパッタリング装置
US4846928A (en) * 1987-08-04 1989-07-11 Texas Instruments, Incorporated Process and apparatus for detecting aberrations in production process operations
JPH0741153Y2 (ja) * 1987-10-26 1995-09-20 東京応化工業株式会社 試料処理用電極
JPH01302726A (ja) * 1988-02-10 1989-12-06 Japan Synthetic Rubber Co Ltd 反応性イオンエッチング装置
US4931158A (en) * 1988-03-22 1990-06-05 The Regents Of The Univ. Of Calif. Deposition of films onto large area substrates using modified reactive magnetron sputtering
EP0350752B1 (de) * 1988-07-15 1993-10-13 Balzers Aktiengesellschaft Haltevorrichtung für eine Scheibe sowie Anwendung derselben
JPH02151865A (ja) * 1988-11-22 1990-06-11 Ucb Sa 高温反応処理方法
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
DE3926877A1 (de) * 1989-08-16 1991-02-21 Leybold Ag Verfahren zum beschichten eines dielektrischen substrats mit kupfer
US5108569A (en) * 1989-11-30 1992-04-28 Applied Materials, Inc. Process and apparatus for forming stoichiometric layer of a metal compound by closed loop voltage controlled reactive sputtering
JPH0465823A (ja) * 1990-07-06 1992-03-02 Oki Electric Ind Co Ltd 半導体素子の製造方法および製造装置
DE4106770C2 (de) * 1991-03-04 1996-10-17 Leybold Ag Verrichtung zum reaktiven Beschichten eines Substrats
CA2061119C (en) * 1991-04-19 1998-02-03 Pei-Ing P. Lee Method of depositing conductors in high aspect ratio apertures
US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator

Also Published As

Publication number Publication date
TW243536B (de) 1995-03-21
EP0698128A1 (de) 1996-02-28
JPH08510296A (ja) 1996-10-29
US5346601A (en) 1994-09-13
AU6831494A (en) 1994-12-12
CA2156716A1 (en) 1994-11-24
DE69401210T2 (de) 1997-04-10
WO1994026949A1 (en) 1994-11-24
EP0698128B1 (de) 1996-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: TOKYO ELECTRON LTD., TOKIO/TOKYO, JP

8339 Ceased/non-payment of the annual fee