DE69401112T2 - Herstellungsverfahren fuer ein verbessertes tantalpulver und daraus hergestellte elektrode mit hoher kapazitaet und geringem leckstrom - Google Patents

Herstellungsverfahren fuer ein verbessertes tantalpulver und daraus hergestellte elektrode mit hoher kapazitaet und geringem leckstrom

Info

Publication number
DE69401112T2
DE69401112T2 DE69401112T DE69401112T DE69401112T2 DE 69401112 T2 DE69401112 T2 DE 69401112T2 DE 69401112 T DE69401112 T DE 69401112T DE 69401112 T DE69401112 T DE 69401112T DE 69401112 T2 DE69401112 T2 DE 69401112T2
Authority
DE
Germany
Prior art keywords
manufacturing
leakage current
high capacity
electrode made
low leakage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69401112T
Other languages
English (en)
Other versions
DE69401112D1 (de
Inventor
Hongju Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of DE69401112D1 publication Critical patent/DE69401112D1/de
Application granted granted Critical
Publication of DE69401112T2 publication Critical patent/DE69401112T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • H01G9/0525—Powder therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Insulating Materials (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE69401112T 1993-04-26 1994-04-15 Herstellungsverfahren fuer ein verbessertes tantalpulver und daraus hergestellte elektrode mit hoher kapazitaet und geringem leckstrom Expired - Lifetime DE69401112T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/052,876 US5448447A (en) 1993-04-26 1993-04-26 Process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom
PCT/US1994/004207 WO1994025971A1 (en) 1993-04-26 1994-04-15 A process for making an improved tantalum powder and high capacitance low leakage electrode made therefrom

Publications (2)

Publication Number Publication Date
DE69401112D1 DE69401112D1 (de) 1997-01-23
DE69401112T2 true DE69401112T2 (de) 1997-04-03

Family

ID=21980485

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69401112T Expired - Lifetime DE69401112T2 (de) 1993-04-26 1994-04-15 Herstellungsverfahren fuer ein verbessertes tantalpulver und daraus hergestellte elektrode mit hoher kapazitaet und geringem leckstrom

Country Status (15)

Country Link
US (1) US5448447A (de)
EP (1) EP0647349B1 (de)
JP (1) JP3174341B2 (de)
KR (1) KR100293304B1 (de)
CN (2) CN1046878C (de)
AT (1) ATE146299T1 (de)
AU (1) AU6706194A (de)
CZ (2) CZ292006B6 (de)
DE (1) DE69401112T2 (de)
HK (1) HK59697A (de)
RU (1) RU2154871C2 (de)
SG (1) SG52629A1 (de)
TW (1) TW439076B (de)
UA (1) UA41325C2 (de)
WO (1) WO1994025971A1 (de)

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US6051044A (en) * 1998-05-04 2000-04-18 Cabot Corporation Nitrided niobium powders and niobium electrolytic capacitors
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JP3196832B2 (ja) 1998-05-15 2001-08-06 日本電気株式会社 固体電解コンデンサ及びその製造方法
US6576038B1 (en) * 1998-05-22 2003-06-10 Cabot Corporation Method to agglomerate metal particles and metal particles having improved properties
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US6462934B2 (en) 1998-09-16 2002-10-08 Cabot Corporation Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides
US6322912B1 (en) * 1998-09-16 2001-11-27 Cabot Corporation Electrolytic capacitor anode of valve metal oxide
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US6391275B1 (en) 1998-09-16 2002-05-21 Cabot Corporation Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides
US6529367B1 (en) 1998-12-15 2003-03-04 Showa Denko Kabushiki Kaisha Niobium capacitor and method of manufacture thereof
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US6652619B2 (en) * 2000-08-10 2003-11-25 Showa Denko K.K. Niobium powder, sintered body thereof, and capacitor using the same
EP1324359B2 (de) † 2000-08-10 2017-10-04 Showa Denko K.K. Niobpuder, sinter davon und kondensator damit
JP2002093666A (ja) * 2000-09-20 2002-03-29 Showa Denko Kk ニオブ粉、それを用いた焼結体及びそれを用いたコンデンサ
US6554884B1 (en) * 2000-10-24 2003-04-29 H.C. Starck, Inc. Tantalum and tantalum nitride powder mixtures for electrolytic capacitors substrates
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KR100812689B1 (ko) * 2000-12-01 2008-03-13 쇼와 덴코 가부시키가이샤 커패시터용 니오브 분말, 그 소결체 및 소결체를 이용한커패시터
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CN109562950B (zh) 2016-09-01 2020-05-19 复合材料技术公司 用于LIB阳极的阀金属基底上的纳米级/纳米结构Si涂层
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Also Published As

Publication number Publication date
CN1108036A (zh) 1995-09-06
CN1046878C (zh) 1999-12-01
EP0647349B1 (de) 1996-12-11
HK59697A (en) 1997-05-16
JPH07508618A (ja) 1995-09-21
CZ292006B6 (cs) 2003-07-16
US5448447A (en) 1995-09-05
JP3174341B2 (ja) 2001-06-11
AU6706194A (en) 1994-11-21
CZ293364B6 (cs) 2004-04-14
CN1236177A (zh) 1999-11-24
UA41325C2 (uk) 2001-09-17
DE69401112D1 (de) 1997-01-23
TW439076B (en) 2001-06-07
RU2154871C2 (ru) 2000-08-20
ATE146299T1 (de) 1996-12-15
KR100293304B1 (ko) 2001-10-24
WO1994025971A1 (en) 1994-11-10
SG52629A1 (en) 1998-09-28
CZ315994A3 (en) 1995-12-13
CN1143333C (zh) 2004-03-24
EP0647349A1 (de) 1995-04-12
RU94046324A (ru) 1996-10-27

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