DE69400351T2 - Verfahren zur Steuerung einer kollimierten Sputterquelle - Google Patents

Verfahren zur Steuerung einer kollimierten Sputterquelle

Info

Publication number
DE69400351T2
DE69400351T2 DE69400351T DE69400351T DE69400351T2 DE 69400351 T2 DE69400351 T2 DE 69400351T2 DE 69400351 T DE69400351 T DE 69400351T DE 69400351 T DE69400351 T DE 69400351T DE 69400351 T2 DE69400351 T2 DE 69400351T2
Authority
DE
Germany
Prior art keywords
controlling
sputter source
collimated sputter
collimated
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69400351T
Other languages
English (en)
Other versions
DE69400351D1 (de
Inventor
Geri M Actor
Vance E Hoffman
Pamela R Patterson
Stephen M Higa
Patrick O Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of DE69400351D1 publication Critical patent/DE69400351D1/de
Application granted granted Critical
Publication of DE69400351T2 publication Critical patent/DE69400351T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69400351T 1993-09-17 1994-09-15 Verfahren zur Steuerung einer kollimierten Sputterquelle Expired - Fee Related DE69400351T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/123,759 US5478455A (en) 1993-09-17 1993-09-17 Method for controlling a collimated sputtering source

Publications (2)

Publication Number Publication Date
DE69400351D1 DE69400351D1 (de) 1996-09-05
DE69400351T2 true DE69400351T2 (de) 1997-01-16

Family

ID=22410718

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69400351T Expired - Fee Related DE69400351T2 (de) 1993-09-17 1994-09-15 Verfahren zur Steuerung einer kollimierten Sputterquelle

Country Status (6)

Country Link
US (1) US5478455A (de)
EP (1) EP0645469B1 (de)
JP (1) JPH07226376A (de)
KR (1) KR950009909A (de)
CN (1) CN1191388C (de)
DE (1) DE69400351T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403459A (en) * 1993-05-17 1995-04-04 Applied Materials, Inc. Cleaning of a PVD chamber containing a collimator
JP3403550B2 (ja) * 1995-06-29 2003-05-06 松下電器産業株式会社 スパッタリング装置とスパッタリング方法
US5705042A (en) * 1996-01-29 1998-01-06 Micron Technology, Inc. Electrically isolated collimator and method
US5985102A (en) * 1996-01-29 1999-11-16 Micron Technology, Inc. Kit for electrically isolating collimator of PVD chamber, chamber so modified, and method of using
US6436246B1 (en) * 1997-01-27 2002-08-20 Micron Technology, Inc. Collimated sputter deposition monitor using sheet resistance
US6605197B1 (en) 1997-05-13 2003-08-12 Applied Materials, Inc. Method of sputtering copper to fill trenches and vias
US6911124B2 (en) * 1998-09-24 2005-06-28 Applied Materials, Inc. Method of depositing a TaN seed layer
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
EP1034566A1 (de) * 1997-11-26 2000-09-13 Applied Materials, Inc. Zerstörungsfreie beschichtungsmethode
TWI223873B (en) 1998-09-24 2004-11-11 Applied Materials Inc Nitrogen-containing tantalum films
US6184137B1 (en) 1998-11-25 2001-02-06 Applied Materials, Inc. Structure and method for improving low temperature copper reflow in semiconductor features
GB2386128B (en) * 2000-12-05 2004-08-04 Trikon Holdings Ltd Magnetron sputtering apparatus
US7282122B2 (en) * 2004-03-26 2007-10-16 Taiwan Semiconductor Manufacturing Company Method and system for target lifetime
US20060081459A1 (en) * 2004-10-18 2006-04-20 Applied Materials, Inc. In-situ monitoring of target erosion
DK1970465T3 (da) * 2007-03-13 2013-10-07 Jds Uniphase Corp Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks
US20100096253A1 (en) * 2008-10-22 2010-04-22 Applied Materials, Inc Pvd cu seed overhang re-sputtering with enhanced cu ionization
CN101864553B (zh) * 2010-05-21 2013-01-30 南京理工大学 基于表面涂覆的微小型零件集成制造方法
CN101845610B (zh) * 2010-06-07 2011-12-07 崔铮 一种连续垂直热蒸发的金属镀膜方法
JP6080027B2 (ja) * 2012-11-15 2017-02-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エッジ除外シールドを整備するための方法及びシステム
JP6088083B1 (ja) * 2016-03-14 2017-03-01 株式会社東芝 処理装置及びコリメータ
JP6602465B2 (ja) * 2017-02-24 2019-11-06 アプライド マテリアルズ インコーポレイテッド 基板キャリア及びマスクキャリアの位置決め装置、基板キャリア及びマスクキャリアの搬送システム、並びにそのための方法
CN109390222B (zh) * 2017-08-08 2021-01-05 宁波江丰电子材料股份有限公司 准直器检具及其使用方法
CN110629173B (zh) * 2018-06-25 2021-12-17 北京北方华创微电子装备有限公司 磁控管控制方法、磁控管控制装置和磁控溅射设备
US11965237B2 (en) * 2020-11-13 2024-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for detecting abnormality of thin-film deposition process
US20220406583A1 (en) * 2021-06-18 2022-12-22 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
CN115572949B (zh) * 2022-09-16 2023-06-16 广州湾区半导体产业集团有限公司 一种双镀源物理气相沉积工艺及多模式物理气相沉积设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166783A (en) * 1978-04-17 1979-09-04 Varian Associates, Inc. Deposition rate regulation by computer control of sputtering systems
US5126028A (en) * 1989-04-17 1992-06-30 Materials Research Corporation Sputter coating process control method and apparatus
EP0440377B1 (de) * 1990-01-29 1998-03-18 Varian Associates, Inc. Gerät und Verfahren zur Niederschlagung durch einen Kollimator
US5186594A (en) * 1990-04-19 1993-02-16 Applied Materials, Inc. Dual cassette load lock
US5223108A (en) * 1991-12-30 1993-06-29 Materials Research Corporation Extended lifetime collimator

Also Published As

Publication number Publication date
DE69400351D1 (de) 1996-09-05
EP0645469B1 (de) 1996-07-31
KR950009909A (ko) 1995-04-26
CN1191388C (zh) 2005-03-02
JPH07226376A (ja) 1995-08-22
US5478455A (en) 1995-12-26
CN1104262A (zh) 1995-06-28
EP0645469A1 (de) 1995-03-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee