DE69331534T2 - Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung - Google Patents

Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung

Info

Publication number
DE69331534T2
DE69331534T2 DE69331534T DE69331534T DE69331534T2 DE 69331534 T2 DE69331534 T2 DE 69331534T2 DE 69331534 T DE69331534 T DE 69331534T DE 69331534 T DE69331534 T DE 69331534T DE 69331534 T2 DE69331534 T2 DE 69331534T2
Authority
DE
Germany
Prior art keywords
manufacture
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69331534T
Other languages
English (en)
Other versions
DE69331534D1 (de
Inventor
Yusuke Kohyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69331534D1 publication Critical patent/DE69331534D1/de
Application granted granted Critical
Publication of DE69331534T2 publication Critical patent/DE69331534T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
DE69331534T 1992-03-30 1993-03-30 Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung Expired - Lifetime DE69331534T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4074485A JP2904635B2 (ja) 1992-03-30 1992-03-30 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69331534D1 DE69331534D1 (de) 2002-03-21
DE69331534T2 true DE69331534T2 (de) 2002-09-12

Family

ID=13548635

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69331534T Expired - Lifetime DE69331534T2 (de) 1992-03-30 1993-03-30 Halbleiter-Speicherbauteil und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (2) US5691550A (de)
EP (1) EP0563879B1 (de)
JP (1) JP2904635B2 (de)
KR (1) KR0178800B1 (de)
DE (1) DE69331534T2 (de)

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JPS55142008A (en) * 1979-04-23 1980-11-06 Mitsui Petrochem Ind Ltd Preparation of polyolefin
JPH08250674A (ja) * 1995-03-15 1996-09-27 Toshiba Microelectron Corp 半導体記憶装置
JP3161354B2 (ja) * 1997-02-07 2001-04-25 日本電気株式会社 半導体装置及びその製造方法
US5792690A (en) * 1997-05-15 1998-08-11 Vanguard International Semiconductor Corporation Method of fabricating a DRAM cell with an area equal to four times the used minimum feature
US5937288A (en) * 1997-06-30 1999-08-10 Siemens Aktiengesellschaft CMOS integrated circuits with reduced substrate defects
KR100260559B1 (ko) * 1997-12-29 2000-07-01 윤종용 비휘발성 메모리 장치의 웰 구조 및 그 제조 방법
KR100328455B1 (ko) * 1997-12-30 2002-08-08 주식회사 하이닉스반도체 반도체소자의제조방법
US6316336B1 (en) * 1999-03-01 2001-11-13 Richard A. Blanchard Method for forming buried layers with top-side contacts and the resulting structure
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
KR100417211B1 (ko) * 2001-12-20 2004-02-05 동부전자 주식회사 반도체 소자의 금속 배선 형성 방법
KR100475084B1 (ko) * 2002-08-02 2005-03-10 삼성전자주식회사 Ｄｒａｍ 반도체 소자 및 그 제조방법
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
JP2005005580A (ja) * 2003-06-13 2005-01-06 Renesas Technology Corp 半導体装置
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
AT504998A2 (de) 2005-04-06 2008-09-15 Fairchild Semiconductor Trenched-gate-feldeffekttransistoren und verfahren zum bilden derselben
JP4955222B2 (ja) 2005-05-20 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN103094348B (zh) 2005-06-10 2016-08-10 飞兆半导体公司 场效应晶体管
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US7554148B2 (en) * 2006-06-27 2009-06-30 United Microelectronics Corp. Pick-up structure for DRAM capacitors
JP4241856B2 (ja) * 2006-06-29 2009-03-18 三洋電機株式会社 半導体装置および半導体装置の製造方法
KR101630734B1 (ko) 2007-09-21 2016-06-16 페어차일드 세미컨덕터 코포레이션 전력 소자
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US8487371B2 (en) 2011-03-29 2013-07-16 Fairchild Semiconductor Corporation Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US9711392B2 (en) 2012-07-25 2017-07-18 Infineon Technologies Ag Field emission devices and methods of making thereof
JP2014138091A (ja) * 2013-01-17 2014-07-28 Fuji Electric Co Ltd 半導体装置およびその製造方法
US11444160B2 (en) 2020-12-11 2022-09-13 Globalfoundries U.S. Inc. Integrated circuit (IC) structure with body contact to well with multiple diode junctions

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62208662A (ja) * 1986-03-07 1987-09-12 Sony Corp 半導体記憶装置
JPS63136558A (ja) * 1986-11-28 1988-06-08 Hitachi Ltd 半導体記憶装置とその製造方法
JP2674992B2 (ja) * 1986-11-28 1997-11-12 株式会社日立製作所 半導体記憶装置におけるプレート配線形成法
US4918502A (en) * 1986-11-28 1990-04-17 Hitachi, Ltd. Semiconductor memory having trench capacitor formed with sheath electrode
GB2199695B (en) * 1987-01-06 1990-07-25 Samsung Semiconductor Inc Dynamic random access memory with selective well biasing
JPS6411360A (en) * 1987-07-06 1989-01-13 Hitachi Ltd Semiconductor memory device
US4845051A (en) * 1987-10-29 1989-07-04 Siliconix Incorporated Buried gate JFET
JPH0797627B2 (ja) * 1987-12-21 1995-10-18 株式会社日立製作所 半導体装置
KR910000246B1 (ko) * 1988-02-15 1991-01-23 삼성전자 주식회사 반도체 메모리장치
DE68926793T2 (de) * 1988-03-15 1997-01-09 Toshiba Kawasaki Kk Dynamischer RAM
US5242845A (en) * 1990-06-13 1993-09-07 Kabushiki Kaisha Toshiba Method of production of vertical MOS transistor
US5264716A (en) * 1992-01-09 1993-11-23 International Business Machines Corporation Diffused buried plate trench dram cell array
JPH07112049B2 (ja) * 1992-01-09 1995-11-29 インターナショナル・ビジネス・マシーンズ・コーポレイション ダイナミック・ランダム・アクセス・メモリ・デバイスおよび製造方法
JPH0637275A (ja) * 1992-07-13 1994-02-10 Toshiba Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
EP0563879A1 (de) 1993-10-06
DE69331534D1 (de) 2002-03-21
KR0178800B1 (ko) 1999-04-15
KR930020588A (ko) 1993-10-20
EP0563879B1 (de) 2002-02-06
US5691550A (en) 1997-11-25
US5959324A (en) 1999-09-28
JP2904635B2 (ja) 1999-06-14
JPH0629485A (ja) 1994-02-04

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Legal Events

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