DE69318202T2 - Festkörperbildaufnahme-Vorrichtung und Herstellungsverfahren - Google Patents

Festkörperbildaufnahme-Vorrichtung und Herstellungsverfahren

Info

Publication number
DE69318202T2
DE69318202T2 DE69318202T DE69318202T DE69318202T2 DE 69318202 T2 DE69318202 T2 DE 69318202T2 DE 69318202 T DE69318202 T DE 69318202T DE 69318202 T DE69318202 T DE 69318202T DE 69318202 T2 DE69318202 T2 DE 69318202T2
Authority
DE
Germany
Prior art keywords
solid
manufacturing
imaging device
state imaging
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69318202T
Other languages
English (en)
Other versions
DE69318202D1 (de
Inventor
Kazuyoshi Mizushima
Hiroyuki Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE69318202D1 publication Critical patent/DE69318202D1/de
Application granted granted Critical
Publication of DE69318202T2 publication Critical patent/DE69318202T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69318202T 1992-02-20 1993-02-18 Festkörperbildaufnahme-Vorrichtung und Herstellungsverfahren Expired - Fee Related DE69318202T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3306992 1992-02-20

Publications (2)

Publication Number Publication Date
DE69318202D1 DE69318202D1 (de) 1998-06-04
DE69318202T2 true DE69318202T2 (de) 1998-11-12

Family

ID=12376442

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69318202T Expired - Fee Related DE69318202T2 (de) 1992-02-20 1993-02-18 Festkörperbildaufnahme-Vorrichtung und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5448097A (de)
EP (1) EP0557098B1 (de)
KR (1) KR0171625B1 (de)
DE (1) DE69318202T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2571018B2 (ja) * 1994-05-31 1997-01-16 日本電気株式会社 固体撮像装置の製造方法
US5855811A (en) 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
JP3702611B2 (ja) * 1997-10-06 2005-10-05 ソニー株式会社 固体撮像素子及びその製造方法
US6169317B1 (en) 1998-02-13 2001-01-02 Canon Kabushiki Kaisha Photoelectric conversion device and image sensor
US6130422A (en) * 1998-06-29 2000-10-10 Intel Corporation Embedded dielectric film for quantum efficiency enhancement in a CMOS imaging device
US6558570B2 (en) 1998-07-01 2003-05-06 Micron Technology, Inc. Polishing slurry and method for chemical-mechanical polishing
US6777716B1 (en) * 1999-02-12 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device and method of manufacturing therefor
US6348706B1 (en) 2000-03-20 2002-02-19 Micron Technology, Inc. Method to form etch and/or CMP stop layers
US7473977B2 (en) * 2003-03-06 2009-01-06 Sony Corporation Method of driving solid state image sensing device
US6812539B1 (en) * 2003-04-10 2004-11-02 Micron Technology, Inc. Imager light shield
JP4046069B2 (ja) * 2003-11-17 2008-02-13 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
US7385167B2 (en) * 2004-07-19 2008-06-10 Micron Technology, Inc. CMOS front end process compatible low stress light shield
US7132352B1 (en) * 2004-08-06 2006-11-07 Advanced Micro Devices, Inc. Method of eliminating source/drain junction spiking, and device produced thereby
JP2009528704A (ja) * 2006-03-02 2009-08-06 アイスモス テクノロジー コーポレイション 光検出器アレイ用フロントサイド電気コンタクトとその製造方法
KR100788381B1 (ko) * 2006-12-22 2008-01-02 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조 방법
US9041841B2 (en) * 2008-10-10 2015-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor having enhanced backside illumination quantum efficiency
JP2013084713A (ja) * 2011-10-07 2013-05-09 Sony Corp 固体撮像素子および製造方法、並びに撮像ユニット
GB2558714B (en) * 2016-10-28 2020-04-08 Canon Kk Photoelectric conversion apparatus and image pickup system

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819129B2 (ja) * 1975-12-10 1983-04-16 株式会社東芝 ハンドウタイソウチノ セイゾウホウホウ
JPS59159563A (ja) * 1983-03-02 1984-09-10 Toshiba Corp 半導体装置の製造方法
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
US4545852A (en) * 1984-06-20 1985-10-08 Hewlett-Packard Company Planarization of dielectric films on integrated circuits
US4694185A (en) * 1986-04-18 1987-09-15 Eastman Kodak Company Light sensing devices with lenticular pixels
JPS63111668A (ja) * 1986-10-30 1988-05-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPS63174359A (ja) * 1987-01-14 1988-07-18 Hitachi Ltd 固体撮像装置
JPH0666452B2 (ja) * 1987-09-04 1994-08-24 株式会社東芝 固体撮像装置の製造方法
JPS6484644A (en) * 1987-09-28 1989-03-29 Oki Electric Ind Co Ltd Manufacture of semiconductor element
JP2822393B2 (ja) * 1988-07-30 1998-11-11 ソニー株式会社 固体撮像装置及びその駆動方法
JPH02156670A (ja) * 1988-12-09 1990-06-15 Sharp Corp 固体撮像素子
JPH03190272A (ja) * 1989-12-20 1991-08-20 Matsushita Electron Corp 固体撮像装置
JPH04211120A (ja) * 1990-02-19 1992-08-03 Matsushita Electric Ind Co Ltd コンタクトの形成方法およびそれを用いた半導体装置の製造方法
JPH0567767A (ja) * 1991-03-06 1993-03-19 Matsushita Electron Corp 固体撮像装置およびその製造方法
US5169491A (en) * 1991-07-29 1992-12-08 Micron Technology, Inc. Method of etching SiO2 dielectric layers using chemical mechanical polishing techniques

Also Published As

Publication number Publication date
EP0557098A1 (de) 1993-08-25
DE69318202D1 (de) 1998-06-04
KR0171625B1 (ko) 1999-02-01
EP0557098B1 (de) 1998-04-29
US5448097A (en) 1995-09-05
KR930018738A (ko) 1993-09-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA,

8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., OSAKA, J

8339 Ceased/non-payment of the annual fee