DE69232896D1 - Verfahren für anodische Bindung mit Lichtstrahlung - Google Patents
Verfahren für anodische Bindung mit LichtstrahlungInfo
- Publication number
- DE69232896D1 DE69232896D1 DE69232896T DE69232896T DE69232896D1 DE 69232896 D1 DE69232896 D1 DE 69232896D1 DE 69232896 T DE69232896 T DE 69232896T DE 69232896 T DE69232896 T DE 69232896T DE 69232896 D1 DE69232896 D1 DE 69232896D1
- Authority
- DE
- Germany
- Prior art keywords
- anodic bonding
- light radiation
- substrate
- glass substrate
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005855 radiation Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 239000011521 glass Substances 0.000 abstract 3
- 230000007704 transition Effects 0.000 abstract 1
Classifications
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/04—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Joining Of Glass To Other Materials (AREA)
- Micromachines (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27611491 | 1991-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69232896D1 true DE69232896D1 (de) | 2003-02-20 |
DE69232896T2 DE69232896T2 (de) | 2003-09-04 |
Family
ID=17564992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69232896T Expired - Lifetime DE69232896T2 (de) | 1991-09-30 | 1992-09-29 | Verfahren für anodische Bindung mit Lichtstrahlung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5820648A (de) |
EP (1) | EP0539741B1 (de) |
AT (1) | ATE231287T1 (de) |
DE (1) | DE69232896T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3300060B2 (ja) * | 1992-10-22 | 2002-07-08 | キヤノン株式会社 | 加速度センサー及びその製造方法 |
JP3188546B2 (ja) * | 1993-03-23 | 2001-07-16 | キヤノン株式会社 | 絶縁体と導電体との接合体並びに接合方法 |
JP3383081B2 (ja) | 1994-07-12 | 2003-03-04 | 三菱電機株式会社 | 陽極接合法を用いて製造した電子部品及び電子部品の製造方法 |
US6823693B1 (en) * | 1998-03-06 | 2004-11-30 | Micron Technology, Inc. | Anodic bonding |
JP3961182B2 (ja) * | 1999-01-29 | 2007-08-22 | セイコーインスツル株式会社 | 陽極接合方法 |
JP3515003B2 (ja) * | 1999-02-03 | 2004-04-05 | 新明和工業株式会社 | レーザ融着方法 |
FR2809534B1 (fr) | 2000-05-26 | 2005-01-14 | Commissariat Energie Atomique | Dispositif semiconducteur a injection electronique verticale et son procede de fabrication |
US20100236705A1 (en) * | 2000-07-18 | 2010-09-23 | Chou Stephen Y | Fluidic and Microdevice Apparatus and Methods For Bonding Components Thereof |
US6809424B2 (en) * | 2000-12-19 | 2004-10-26 | Harris Corporation | Method for making electronic devices including silicon and LTCC and devices produced thereby |
US6503847B2 (en) | 2001-04-26 | 2003-01-07 | Institute Of Microelectronics | Room temperature wafer-to-wafer bonding by polydimethylsiloxane |
US6660614B2 (en) | 2001-05-04 | 2003-12-09 | New Mexico Tech Research Foundation | Method for anodically bonding glass and semiconducting material together |
JP2003101188A (ja) * | 2001-09-26 | 2003-04-04 | Nitto Denko Corp | ビアホールの形成方法及びそれを用いたフレキシブル配線板とその製造方法 |
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DE10235372A1 (de) * | 2002-08-02 | 2004-02-19 | Robert Bosch Gmbh | Elektrisches Bauelement |
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US7259466B2 (en) * | 2002-12-17 | 2007-08-21 | Finisar Corporation | Low temperature bonding of multilayer substrates |
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US20050173380A1 (en) * | 2004-02-09 | 2005-08-11 | Carbone Frank L. | Directed energy net shape method and apparatus |
EP1569263B1 (de) * | 2004-02-27 | 2011-11-23 | OSRAM Opto Semiconductors GmbH | Verfahren zum Verbinden zweier Wafer |
US7153759B2 (en) * | 2004-04-20 | 2006-12-26 | Agency For Science Technology And Research | Method of fabricating microelectromechanical system structures |
JP4375186B2 (ja) * | 2004-09-30 | 2009-12-02 | 株式会社日立製作所 | 陽極接合構造を用いた電子装置 |
DE102007008540A1 (de) * | 2007-02-21 | 2008-08-28 | Friedrich-Schiller-Universität Jena | Verfahren zum Laser-gestützten Bonden, derart gebondete Substrate und deren Verwendung |
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GB1138401A (en) * | 1965-05-06 | 1969-01-01 | Mallory & Co Inc P R | Bonding |
US3417459A (en) * | 1965-05-06 | 1968-12-24 | Mallory & Co Inc P R | Bonding electrically conductive metals to insulators |
US3506424A (en) * | 1967-05-03 | 1970-04-14 | Mallory & Co Inc P R | Bonding an insulator to an insulator |
US3589965A (en) * | 1968-11-27 | 1971-06-29 | Mallory & Co Inc P R | Bonding an insulator to an insulator |
US3783218A (en) * | 1972-01-12 | 1974-01-01 | Gen Electric | Electrostatic bonding process |
US3951707A (en) * | 1973-04-02 | 1976-04-20 | Kulite Semiconductor Products, Inc. | Method for fabricating glass-backed transducers and glass-backed structures |
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US4452624A (en) * | 1982-12-21 | 1984-06-05 | The United States Of America As Represented By The Secretary Of The Navy | Method for bonding insulator to insulator |
DE3436001A1 (de) * | 1984-10-01 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Elektrostatisches glasloeten von halbleiterbauteilen |
US4643532A (en) * | 1985-06-24 | 1987-02-17 | At&T Bell Laboratories | Field-assisted bonding method and articles produced thereby |
FR2624041A1 (fr) * | 1987-12-02 | 1989-06-09 | Otic Fischer & Porter | Procede de soudage au moyen d'un faisceau laser, notamment applicable au soudage de pieces en verre |
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GB9020908D0 (en) * | 1990-09-26 | 1990-11-07 | Nat Res Dev | Field-assisted bonding |
-
1992
- 1992-09-29 AT AT92116628T patent/ATE231287T1/de not_active IP Right Cessation
- 1992-09-29 DE DE69232896T patent/DE69232896T2/de not_active Expired - Lifetime
- 1992-09-29 EP EP92116628A patent/EP0539741B1/de not_active Expired - Lifetime
-
1995
- 1995-04-19 US US08/425,357 patent/US5820648A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0539741A1 (de) | 1993-05-05 |
US5820648A (en) | 1998-10-13 |
ATE231287T1 (de) | 2003-02-15 |
EP0539741B1 (de) | 2003-01-15 |
DE69232896T2 (de) | 2003-09-04 |
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