DE69224833D1 - Leistungs-mosfet-treiber mit reduzierung des querstroms - Google Patents
Leistungs-mosfet-treiber mit reduzierung des querstromsInfo
- Publication number
- DE69224833D1 DE69224833D1 DE69224833T DE69224833T DE69224833D1 DE 69224833 D1 DE69224833 D1 DE 69224833D1 DE 69224833 T DE69224833 T DE 69224833T DE 69224833 T DE69224833 T DE 69224833T DE 69224833 D1 DE69224833 D1 DE 69224833D1
- Authority
- DE
- Germany
- Prior art keywords
- power mosfet
- current reduction
- cross current
- mosfet driver
- driver
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
- H03K19/001—Arrangements for reducing power consumption in bipolar transistor circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US72748391A | 1991-07-09 | 1991-07-09 | |
PCT/US1992/005639 WO1993001656A1 (en) | 1991-07-09 | 1992-07-06 | Power mosfet driver with cross-conduction current reduction |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69224833D1 true DE69224833D1 (de) | 1998-04-23 |
DE69224833T2 DE69224833T2 (de) | 1998-07-09 |
Family
ID=24922852
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69224833T Expired - Fee Related DE69224833T2 (de) | 1991-07-09 | 1992-07-06 | Leistungs-mosfet-treiber mit reduzierung des querstroms |
Country Status (5)
Country | Link |
---|---|
US (1) | US5281862A (de) |
EP (1) | EP0593628B1 (de) |
JP (1) | JP2821714B2 (de) |
DE (1) | DE69224833T2 (de) |
WO (1) | WO1993001656A1 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3142018B2 (ja) * | 1992-03-12 | 2001-03-07 | 日本テキサス・インスツルメンツ株式会社 | 負荷駆動回路 |
US5430401A (en) * | 1992-08-27 | 1995-07-04 | Northern Telecom Ltd. | Electronic switches |
EP0620646B1 (de) * | 1993-04-09 | 1997-12-29 | STMicroelectronics S.r.l. | Steuerschaltung mit keinem Vorspannungsstrom für einen Low-Side-Treiber |
US6407594B1 (en) | 1993-04-09 | 2002-06-18 | Sgs-Thomson Microelectronics S.R.L. | Zero bias current driver control circuit |
JPH06334480A (ja) * | 1993-05-25 | 1994-12-02 | Nec Corp | 半導体集積回路 |
JP3433359B2 (ja) * | 1993-06-18 | 2003-08-04 | 日本テキサス・インスツルメンツ株式会社 | 低電圧出力駆動回路 |
US5453705A (en) * | 1993-12-21 | 1995-09-26 | International Business Machines Corporation | Reduced power VLSI chip and driver circuit |
US5467047A (en) * | 1994-07-15 | 1995-11-14 | Motorola, Inc. | Power transistor rapid turn off circuit for saving power |
DE4438669C1 (de) * | 1994-10-28 | 1996-08-01 | Sgs Thomson Microelectronics | Treiberschaltung |
US5781046A (en) * | 1995-03-22 | 1998-07-14 | Vtc, Inc. | Push-and-pull driver circuit for driving an H-bridge coupled to a two-terminal inductive load |
US5751171A (en) * | 1995-03-22 | 1998-05-12 | Vtc Inc. | Predriver for fast current switching through a two-terminal inductive load |
US5841313A (en) * | 1995-08-30 | 1998-11-24 | Cherry Semiconductor Corporation | Switch with programmable delay |
US5781058A (en) * | 1995-08-30 | 1998-07-14 | Cherry Semiconductor Corporation | Totem pole driver with cross conduction protection and default low impedance state output |
US5886563A (en) * | 1996-03-25 | 1999-03-23 | Nasila; Mikko J. | Interlocked half-bridge circuit |
US5777496A (en) * | 1996-03-27 | 1998-07-07 | Aeg Schneider Automation, Inc. | Circuit for preventing more than one transistor from conducting |
US5896058A (en) * | 1997-03-31 | 1999-04-20 | Cherry Semiconductor Corporation | High speed totem pole FET driver circuit with differential cross conduction prevention |
US5872477A (en) * | 1997-06-13 | 1999-02-16 | Vtc Inc. | Multiplexer with CMOS break-before-make circuit |
US6166500A (en) * | 1997-07-18 | 2000-12-26 | Siemens Canada Limited | Actively controlled regenerative snubber for unipolar brushless DC motors |
IT1318794B1 (it) * | 2000-08-29 | 2003-09-10 | St Microelectronics Srl | Circuito per il pilotaggio di un interruttore di potenza. |
US6605982B2 (en) * | 2001-06-29 | 2003-08-12 | Stmicroelectronics Inc. | Bias circuit for a transistor of a storage cell |
US8144125B2 (en) | 2006-03-30 | 2012-03-27 | Cypress Semiconductor Corporation | Apparatus and method for reducing average scan rate to detect a conductive object on a sensing device |
US8040142B1 (en) | 2006-03-31 | 2011-10-18 | Cypress Semiconductor Corporation | Touch detection techniques for capacitive touch sense systems |
US7852125B2 (en) * | 2006-05-29 | 2010-12-14 | Koninklijke Philips Electronics N.V. | Switching circuit arrangement |
US8547114B2 (en) | 2006-11-14 | 2013-10-01 | Cypress Semiconductor Corporation | Capacitance to code converter with sigma-delta modulator |
US8089288B1 (en) | 2006-11-16 | 2012-01-03 | Cypress Semiconductor Corporation | Charge accumulation capacitance sensor with linear transfer characteristic |
US8902172B2 (en) * | 2006-12-07 | 2014-12-02 | Cypress Semiconductor Corporation | Preventing unintentional activation of a touch-sensor button caused by a presence of conductive liquid on the touch-sensor button |
US8058937B2 (en) | 2007-01-30 | 2011-11-15 | Cypress Semiconductor Corporation | Setting a discharge rate and a charge rate of a relaxation oscillator circuit |
US20080196945A1 (en) * | 2007-02-21 | 2008-08-21 | Jason Konstas | Preventing unintentional activation of a sensor element of a sensing device |
US8144126B2 (en) | 2007-05-07 | 2012-03-27 | Cypress Semiconductor Corporation | Reducing sleep current in a capacitance sensing system |
US9500686B1 (en) | 2007-06-29 | 2016-11-22 | Cypress Semiconductor Corporation | Capacitance measurement system and methods |
US8169238B1 (en) * | 2007-07-03 | 2012-05-01 | Cypress Semiconductor Corporation | Capacitance to frequency converter |
US8089289B1 (en) | 2007-07-03 | 2012-01-03 | Cypress Semiconductor Corporation | Capacitive field sensor with sigma-delta modulator |
US8570053B1 (en) | 2007-07-03 | 2013-10-29 | Cypress Semiconductor Corporation | Capacitive field sensor with sigma-delta modulator |
US7771115B2 (en) * | 2007-08-16 | 2010-08-10 | Micron Technology, Inc. | Temperature sensor circuit, device, system, and method |
US20090140791A1 (en) * | 2007-11-29 | 2009-06-04 | Young Paul D | Switching Element Control |
US8525798B2 (en) | 2008-01-28 | 2013-09-03 | Cypress Semiconductor Corporation | Touch sensing |
US8358142B2 (en) | 2008-02-27 | 2013-01-22 | Cypress Semiconductor Corporation | Methods and circuits for measuring mutual and self capacitance |
US8319505B1 (en) | 2008-10-24 | 2012-11-27 | Cypress Semiconductor Corporation | Methods and circuits for measuring mutual and self capacitance |
US9104273B1 (en) | 2008-02-29 | 2015-08-11 | Cypress Semiconductor Corporation | Multi-touch sensing method |
US8321174B1 (en) | 2008-09-26 | 2012-11-27 | Cypress Semiconductor Corporation | System and method to measure capacitance of capacitive sensor array |
US8487639B1 (en) | 2008-11-21 | 2013-07-16 | Cypress Semiconductor Corporation | Receive demodulator for capacitive sensing |
US8866500B2 (en) | 2009-03-26 | 2014-10-21 | Cypress Semiconductor Corporation | Multi-functional capacitance sensing circuit with a current conveyor |
US9268441B2 (en) | 2011-04-05 | 2016-02-23 | Parade Technologies, Ltd. | Active integrator for a capacitive sense array |
TW201411809A (zh) * | 2012-09-05 | 2014-03-16 | Silicongear Corp | 功率型金氧半場效電晶體元件 |
JP6091643B2 (ja) * | 2013-10-31 | 2017-03-08 | 三菱電機エンジニアリング株式会社 | 共振型高周波電源装置及び共振型高周波電源装置用スイッチング回路 |
CN107112988B (zh) * | 2014-11-07 | 2018-05-04 | 贝能思科技有限公司 | 带有预防交叉导通电路的开关驱动器 |
US9712058B1 (en) | 2016-08-29 | 2017-07-18 | Silanna Asia Pte Ltd | High speed tri-level input power converter gate driver |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958136A (en) * | 1974-08-09 | 1976-05-18 | Bell Telephone Laboratories, Incorporated | Level shifter circuit |
DE2612495C3 (de) * | 1976-03-24 | 1983-01-05 | Siemens AG, 1000 Berlin und 8000 München | Integrierter Treiberbaustein für binäre bzw. ternäre Ausgangssignale |
US4081695A (en) * | 1976-12-30 | 1978-03-28 | Motorola, Inc. | Base drive boost circuit for improved fall time in bipolar transistor logic circuits |
US4423341A (en) * | 1981-01-02 | 1983-12-27 | Sperry Corporation | Fast switching field effect transistor driver circuit |
JPS57188138A (en) * | 1981-05-15 | 1982-11-19 | Nec Corp | Logical gate circuit |
JPS6414116A (en) * | 1987-07-08 | 1989-01-18 | Kawasaki Steel Co | Production of ferric chloride for flocculant in waste water treatment |
US4777391A (en) * | 1987-07-17 | 1988-10-11 | Signetics Corporation | Bipolar multiplexer having a select buffer circuit with a charging and discharging circuit |
JPS6457821A (en) * | 1987-08-28 | 1989-03-06 | Matsushita Electric Ind Co Ltd | Ttl circuit |
US4855622A (en) * | 1987-12-18 | 1989-08-08 | North American Philips Corporation, Signetics Division | TTL compatible switching circuit having controlled ramp output |
US4972104A (en) * | 1988-06-03 | 1990-11-20 | Fairchild Semiconductor Corporation | TTL totem pole anti-simultaneous conduction circuit |
FR2643761B1 (fr) * | 1989-02-24 | 1994-09-09 | Sgs Thomson Microelectronics | Circuit de sortie compatible ttl a vitesse de commutation elevee |
US5023481A (en) * | 1989-12-27 | 1991-06-11 | North American Philips Corporation | Totem pole circuit with additional diode coupling |
-
1992
- 1992-07-06 WO PCT/US1992/005639 patent/WO1993001656A1/en active IP Right Grant
- 1992-07-06 DE DE69224833T patent/DE69224833T2/de not_active Expired - Fee Related
- 1992-07-06 EP EP92915261A patent/EP0593628B1/de not_active Expired - Lifetime
- 1992-07-06 JP JP5502361A patent/JP2821714B2/ja not_active Expired - Lifetime
- 1992-10-13 US US07/960,246 patent/US5281862A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0593628B1 (de) | 1998-03-18 |
EP0593628A4 (de) | 1995-04-12 |
DE69224833T2 (de) | 1998-07-09 |
JP2821714B2 (ja) | 1998-11-05 |
US5281862A (en) | 1994-01-25 |
EP0593628A1 (de) | 1994-04-27 |
JPH06509913A (ja) | 1994-11-02 |
WO1993001656A1 (en) | 1993-01-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FAIRCHILD SEMICONDUCTOR CORP. (N.D.GES.D. STAATES |
|
8339 | Ceased/non-payment of the annual fee |