DE69218271T2 - Verfahren und Vorrichtung zur Plasmaätzung von Diamant - Google Patents

Verfahren und Vorrichtung zur Plasmaätzung von Diamant

Info

Publication number
DE69218271T2
DE69218271T2 DE69218271T DE69218271T DE69218271T2 DE 69218271 T2 DE69218271 T2 DE 69218271T2 DE 69218271 T DE69218271 T DE 69218271T DE 69218271 T DE69218271 T DE 69218271T DE 69218271 T2 DE69218271 T2 DE 69218271T2
Authority
DE
Germany
Prior art keywords
diamond
plasma etching
etching
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69218271T
Other languages
English (en)
Other versions
DE69218271D1 (de
Inventor
Yoshiki Nishibayashi
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69218271D1 publication Critical patent/DE69218271D1/de
Publication of DE69218271T2 publication Critical patent/DE69218271T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32697Electrostatic control
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • H01J2237/3343Problems associated with etching
    • H01J2237/3348Problems associated with etching control of ion bombardment energy
DE69218271T 1991-01-24 1992-01-20 Verfahren und Vorrichtung zur Plasmaätzung von Diamant Expired - Lifetime DE69218271T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3060821A JPH04240725A (ja) 1991-01-24 1991-01-24 エッチング方法

Publications (2)

Publication Number Publication Date
DE69218271D1 DE69218271D1 (de) 1997-04-24
DE69218271T2 true DE69218271T2 (de) 1997-06-26

Family

ID=13153404

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69218271T Expired - Lifetime DE69218271T2 (de) 1991-01-24 1992-01-20 Verfahren und Vorrichtung zur Plasmaätzung von Diamant

Country Status (4)

Country Link
US (1) US5417798A (de)
EP (1) EP0496564B1 (de)
JP (1) JPH04240725A (de)
DE (1) DE69218271T2 (de)

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JPH04240725A (ja) * 1991-01-24 1992-08-28 Sumitomo Electric Ind Ltd エッチング方法
US5683939A (en) * 1993-04-02 1997-11-04 Harris Corporation Diamond insulator devices and method of fabrication
US5559367A (en) * 1994-07-12 1996-09-24 International Business Machines Corporation Diamond-like carbon for use in VLSI and ULSI interconnect systems
US6077787A (en) * 1995-09-25 2000-06-20 Board Of Trustees Operating Michigan State University Method for radiofrequency wave etching
US5693241A (en) * 1996-06-18 1997-12-02 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Atmospheric pressure method and apparatus for removal of organic matter with atomic and ionic oxygen
US6013191A (en) * 1997-10-27 2000-01-11 Advanced Refractory Technologies, Inc. Method of polishing CVD diamond films by oxygen plasma
EP1038046A4 (de) * 1997-12-05 2006-08-02 Tegal Corp Plasmareaktor mit abscheidungsabschirmung
US6521081B2 (en) * 1997-12-05 2003-02-18 Tegal Corporation Deposition shield for a plasma reactor
JP2000169961A (ja) * 1998-12-02 2000-06-20 Matsushita Electric Ind Co Ltd スパッタ装置
KR100768610B1 (ko) * 1998-12-11 2007-10-18 서페이스 테크놀로지 시스템스 피엘씨 플라즈마 처리장치
US6652763B1 (en) * 2000-04-03 2003-11-25 Hrl Laboratories, Llc Method and apparatus for large-scale diamond polishing
US6440219B1 (en) * 2000-06-07 2002-08-27 Simplus Systems Corporation Replaceable shielding apparatus
US20020185226A1 (en) * 2000-08-10 2002-12-12 Lea Leslie Michael Plasma processing apparatus
US6504307B1 (en) * 2000-11-30 2003-01-07 Advanced Cardiovascular Systems, Inc. Application of variable bias voltage on a cylindrical grid enclosing a target
KR20030028296A (ko) * 2001-09-28 2003-04-08 학교법인 한양학원 플라즈마 화학기상증착 장치 및 이를 이용한 탄소나노튜브제조방법
DE10340147B4 (de) * 2002-08-27 2014-04-10 Kyocera Corp. Trockenätzverfahren und Trockenätzvorrichtung
US7459098B2 (en) * 2002-08-28 2008-12-02 Kyocera Corporation Dry etching apparatus, dry etching method, and plate and tray used therein
US7556741B2 (en) * 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
CA2543666A1 (en) * 2003-10-31 2005-05-12 Ventracor Limited Plasma immersion ion implantation using conductive mesh
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
KR100823949B1 (ko) * 2005-06-30 2008-04-22 어플라이드 머티어리얼스, 인코포레이티드 포토마스크 플라즈마 에칭 방법 및 장치
JP2007061212A (ja) * 2005-08-29 2007-03-15 Kai R & D Center Co Ltd 刃体の刃縁の成形方法
CN101490789B (zh) 2006-07-20 2011-04-13 阿维扎技术有限公司 离子源
US8425741B2 (en) 2006-07-20 2013-04-23 Aviza Technology Limited Ion deposition apparatus having rotatable carousel for supporting a plurality of targets
JP2009545101A (ja) 2006-07-20 2009-12-17 アビザ テクノロジー リミティド プラズマ源
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7909961B2 (en) 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
WO2008090513A2 (en) * 2007-01-22 2008-07-31 Element Six Limited Diamond electronic devices including a surface and methods for their manufacture
DE102008053254A1 (de) 2008-10-25 2010-04-29 Ab Solut Chemie Gmbh Verfahren zum substratschonenden Entfernen von Hartstoffschichten
JP5937936B2 (ja) * 2012-09-24 2016-06-22 新明和工業株式会社 鋭利部を備える医療用・衛生用器具の製造方法および製造装置
US20150020974A1 (en) * 2013-07-19 2015-01-22 Psk Inc. Baffle and apparatus for treating surface of baffle, and substrate treating apparatus
JP6498383B2 (ja) * 2014-02-24 2019-04-10 サンスター株式会社 不織布シート、細胞培養足場材、及び、不織布シートの製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5852325B2 (ja) * 1979-12-14 1983-11-22 富士通株式会社 プラズマエッチング処理方法および処理装置
JPS5687672A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
JPS5694745A (en) * 1979-12-28 1981-07-31 Sony Corp Plasma treatment device
DE3165961D1 (en) * 1980-05-12 1984-10-18 Fujitsu Ltd Method and apparatus for plasma etching
DE3046629C2 (de) * 1980-12-11 1985-04-04 Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt Verfahren zur Herstellung von Isolatoroberflächen
JPS583635A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd プラズマ中化学気相成長装置
JPS5946031A (ja) * 1982-09-09 1984-03-15 Fujitsu Ltd プラズマ処理装置
US4496449A (en) * 1983-12-16 1985-01-29 Colromm, Inc. Electron beam etching of integrated circuit structures
JPS63175427A (ja) * 1987-01-16 1988-07-19 Nec Corp ドライエツチング装置
JPS63220525A (ja) * 1987-03-09 1988-09-13 Sumitomo Electric Ind Ltd ダイヤモンド半導体のエツチング方法
JPS6428922A (en) * 1987-07-24 1989-01-31 Citizen Watch Co Ltd Dry etching device
JPH01246116A (ja) * 1988-03-29 1989-10-02 Natl Inst For Res In Inorg Mater 針状,繊維状,多孔質状ダイヤモンドまたはそれらの集合体の製造法
JP2763172B2 (ja) * 1990-03-19 1998-06-11 株式会社神戸製鋼所 ダイヤモンド薄膜のエッチング方法
JPH04240725A (ja) * 1991-01-24 1992-08-28 Sumitomo Electric Ind Ltd エッチング方法

Also Published As

Publication number Publication date
JPH04240725A (ja) 1992-08-28
EP0496564B1 (de) 1997-03-19
US5417798A (en) 1995-05-23
DE69218271D1 (de) 1997-04-24
EP0496564A1 (de) 1992-07-29

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Free format text: NISHIBAYASHI, YOSHIKI,C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO, JP FUJIMORI, NAOJI, C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO, JP

8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Free format text: WESER & KOLLEGEN, 81245 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN