DE69218271T2 - Verfahren und Vorrichtung zur Plasmaätzung von Diamant - Google Patents
Verfahren und Vorrichtung zur Plasmaätzung von DiamantInfo
- Publication number
- DE69218271T2 DE69218271T2 DE69218271T DE69218271T DE69218271T2 DE 69218271 T2 DE69218271 T2 DE 69218271T2 DE 69218271 T DE69218271 T DE 69218271T DE 69218271 T DE69218271 T DE 69218271T DE 69218271 T2 DE69218271 T2 DE 69218271T2
- Authority
- DE
- Germany
- Prior art keywords
- diamond
- plasma etching
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
- H01J2237/3348—Problems associated with etching control of ion bombardment energy
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3060821A JPH04240725A (ja) | 1991-01-24 | 1991-01-24 | エッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69218271D1 DE69218271D1 (de) | 1997-04-24 |
DE69218271T2 true DE69218271T2 (de) | 1997-06-26 |
Family
ID=13153404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69218271T Expired - Lifetime DE69218271T2 (de) | 1991-01-24 | 1992-01-20 | Verfahren und Vorrichtung zur Plasmaätzung von Diamant |
Country Status (4)
Country | Link |
---|---|
US (1) | US5417798A (de) |
EP (1) | EP0496564B1 (de) |
JP (1) | JPH04240725A (de) |
DE (1) | DE69218271T2 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04240725A (ja) * | 1991-01-24 | 1992-08-28 | Sumitomo Electric Ind Ltd | エッチング方法 |
US5683939A (en) * | 1993-04-02 | 1997-11-04 | Harris Corporation | Diamond insulator devices and method of fabrication |
US5559367A (en) * | 1994-07-12 | 1996-09-24 | International Business Machines Corporation | Diamond-like carbon for use in VLSI and ULSI interconnect systems |
US6077787A (en) * | 1995-09-25 | 2000-06-20 | Board Of Trustees Operating Michigan State University | Method for radiofrequency wave etching |
US5693241A (en) * | 1996-06-18 | 1997-12-02 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Atmospheric pressure method and apparatus for removal of organic matter with atomic and ionic oxygen |
US6013191A (en) * | 1997-10-27 | 2000-01-11 | Advanced Refractory Technologies, Inc. | Method of polishing CVD diamond films by oxygen plasma |
EP1038046A4 (de) * | 1997-12-05 | 2006-08-02 | Tegal Corp | Plasmareaktor mit abscheidungsabschirmung |
US6521081B2 (en) * | 1997-12-05 | 2003-02-18 | Tegal Corporation | Deposition shield for a plasma reactor |
JP2000169961A (ja) * | 1998-12-02 | 2000-06-20 | Matsushita Electric Ind Co Ltd | スパッタ装置 |
KR100768610B1 (ko) * | 1998-12-11 | 2007-10-18 | 서페이스 테크놀로지 시스템스 피엘씨 | 플라즈마 처리장치 |
US6652763B1 (en) * | 2000-04-03 | 2003-11-25 | Hrl Laboratories, Llc | Method and apparatus for large-scale diamond polishing |
US6440219B1 (en) * | 2000-06-07 | 2002-08-27 | Simplus Systems Corporation | Replaceable shielding apparatus |
US20020185226A1 (en) * | 2000-08-10 | 2002-12-12 | Lea Leslie Michael | Plasma processing apparatus |
US6504307B1 (en) * | 2000-11-30 | 2003-01-07 | Advanced Cardiovascular Systems, Inc. | Application of variable bias voltage on a cylindrical grid enclosing a target |
KR20030028296A (ko) * | 2001-09-28 | 2003-04-08 | 학교법인 한양학원 | 플라즈마 화학기상증착 장치 및 이를 이용한 탄소나노튜브제조방법 |
DE10340147B4 (de) * | 2002-08-27 | 2014-04-10 | Kyocera Corp. | Trockenätzverfahren und Trockenätzvorrichtung |
US7459098B2 (en) * | 2002-08-28 | 2008-12-02 | Kyocera Corporation | Dry etching apparatus, dry etching method, and plate and tray used therein |
US7556741B2 (en) * | 2002-08-28 | 2009-07-07 | Kyocera Corporation | Method for producing a solar cell |
CA2543666A1 (en) * | 2003-10-31 | 2005-05-12 | Ventracor Limited | Plasma immersion ion implantation using conductive mesh |
US8349128B2 (en) | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
KR100823949B1 (ko) * | 2005-06-30 | 2008-04-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 포토마스크 플라즈마 에칭 방법 및 장치 |
JP2007061212A (ja) * | 2005-08-29 | 2007-03-15 | Kai R & D Center Co Ltd | 刃体の刃縁の成形方法 |
CN101490789B (zh) | 2006-07-20 | 2011-04-13 | 阿维扎技术有限公司 | 离子源 |
US8425741B2 (en) | 2006-07-20 | 2013-04-23 | Aviza Technology Limited | Ion deposition apparatus having rotatable carousel for supporting a plurality of targets |
JP2009545101A (ja) | 2006-07-20 | 2009-12-17 | アビザ テクノロジー リミティド | プラズマ源 |
US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7909961B2 (en) | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
WO2008090513A2 (en) * | 2007-01-22 | 2008-07-31 | Element Six Limited | Diamond electronic devices including a surface and methods for their manufacture |
DE102008053254A1 (de) | 2008-10-25 | 2010-04-29 | Ab Solut Chemie Gmbh | Verfahren zum substratschonenden Entfernen von Hartstoffschichten |
JP5937936B2 (ja) * | 2012-09-24 | 2016-06-22 | 新明和工業株式会社 | 鋭利部を備える医療用・衛生用器具の製造方法および製造装置 |
US20150020974A1 (en) * | 2013-07-19 | 2015-01-22 | Psk Inc. | Baffle and apparatus for treating surface of baffle, and substrate treating apparatus |
JP6498383B2 (ja) * | 2014-02-24 | 2019-04-10 | サンスター株式会社 | 不織布シート、細胞培養足場材、及び、不織布シートの製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5852325B2 (ja) * | 1979-12-14 | 1983-11-22 | 富士通株式会社 | プラズマエッチング処理方法および処理装置 |
JPS5687672A (en) * | 1979-12-15 | 1981-07-16 | Anelva Corp | Dry etching apparatus |
JPS5694745A (en) * | 1979-12-28 | 1981-07-31 | Sony Corp | Plasma treatment device |
DE3165961D1 (en) * | 1980-05-12 | 1984-10-18 | Fujitsu Ltd | Method and apparatus for plasma etching |
DE3046629C2 (de) * | 1980-12-11 | 1985-04-04 | Gesellschaft für Schwerionenforschung mbH, 6100 Darmstadt | Verfahren zur Herstellung von Isolatoroberflächen |
JPS583635A (ja) * | 1981-06-29 | 1983-01-10 | Fujitsu Ltd | プラズマ中化学気相成長装置 |
JPS5946031A (ja) * | 1982-09-09 | 1984-03-15 | Fujitsu Ltd | プラズマ処理装置 |
US4496449A (en) * | 1983-12-16 | 1985-01-29 | Colromm, Inc. | Electron beam etching of integrated circuit structures |
JPS63175427A (ja) * | 1987-01-16 | 1988-07-19 | Nec Corp | ドライエツチング装置 |
JPS63220525A (ja) * | 1987-03-09 | 1988-09-13 | Sumitomo Electric Ind Ltd | ダイヤモンド半導体のエツチング方法 |
JPS6428922A (en) * | 1987-07-24 | 1989-01-31 | Citizen Watch Co Ltd | Dry etching device |
JPH01246116A (ja) * | 1988-03-29 | 1989-10-02 | Natl Inst For Res In Inorg Mater | 針状,繊維状,多孔質状ダイヤモンドまたはそれらの集合体の製造法 |
JP2763172B2 (ja) * | 1990-03-19 | 1998-06-11 | 株式会社神戸製鋼所 | ダイヤモンド薄膜のエッチング方法 |
JPH04240725A (ja) * | 1991-01-24 | 1992-08-28 | Sumitomo Electric Ind Ltd | エッチング方法 |
-
1991
- 1991-01-24 JP JP3060821A patent/JPH04240725A/ja active Pending
-
1992
- 1992-01-20 DE DE69218271T patent/DE69218271T2/de not_active Expired - Lifetime
- 1992-01-20 EP EP92300481A patent/EP0496564B1/de not_active Expired - Lifetime
- 1992-01-22 US US07/824,091 patent/US5417798A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH04240725A (ja) | 1992-08-28 |
EP0496564B1 (de) | 1997-03-19 |
US5417798A (en) | 1995-05-23 |
DE69218271D1 (de) | 1997-04-24 |
EP0496564A1 (de) | 1992-07-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8381 | Inventor (new situation) |
Free format text: NISHIBAYASHI, YOSHIKI,C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO, JP FUJIMORI, NAOJI, C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO, JP |
|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8328 | Change in the person/name/address of the agent |
Free format text: WESER & KOLLEGEN, 81245 MUENCHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: MEISSNER, BOLTE & PARTNER GBR, 80538 MUENCHEN |