DE69216552D1 - Röntgenbelichtungsvorrichtung und Verfahren zur Herstellung von Halbleiteranordnungen - Google Patents

Röntgenbelichtungsvorrichtung und Verfahren zur Herstellung von Halbleiteranordnungen

Info

Publication number
DE69216552D1
DE69216552D1 DE69216552T DE69216552T DE69216552D1 DE 69216552 D1 DE69216552 D1 DE 69216552D1 DE 69216552 T DE69216552 T DE 69216552T DE 69216552 T DE69216552 T DE 69216552T DE 69216552 D1 DE69216552 D1 DE 69216552D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
exposure device
ray exposure
producing semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69216552T
Other languages
English (en)
Other versions
DE69216552T2 (de
Inventor
Ryuichi Ebinuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69216552D1 publication Critical patent/DE69216552D1/de
Publication of DE69216552T2 publication Critical patent/DE69216552T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69216552T 1991-11-01 1992-10-28 Röntgenbelichtungsvorrichtung und Verfahren zur Herstellung von Halbleiteranordnungen Expired - Fee Related DE69216552T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31541791A JP3184582B2 (ja) 1991-11-01 1991-11-01 Ｘ線露光装置およびｘ線露光方法

Publications (2)

Publication Number Publication Date
DE69216552D1 true DE69216552D1 (de) 1997-02-20
DE69216552T2 DE69216552T2 (de) 1997-04-24

Family

ID=18065135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69216552T Expired - Fee Related DE69216552T2 (de) 1991-11-01 1992-10-28 Röntgenbelichtungsvorrichtung und Verfahren zur Herstellung von Halbleiteranordnungen

Country Status (5)

Country Link
US (1) US5347561A (de)
EP (1) EP0540302B1 (de)
JP (1) JP3184582B2 (de)
CA (1) CA2081642C (de)
DE (1) DE69216552T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3101473B2 (ja) * 1993-11-05 2000-10-23 キヤノン株式会社 露光方法及び該露光方法を用いるデバイス製造方法
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus
US5467379A (en) * 1994-11-22 1995-11-14 Morton International, Inc. Apparatus for taking x-rays of an air bag inflator during a firing cycle
JP3261948B2 (ja) * 1995-03-28 2002-03-04 キヤノン株式会社 Ｘ線露光用マスク及びそれを用いた半導体素子の製造方法
JP3894509B2 (ja) * 1995-08-07 2007-03-22 キヤノン株式会社 光学装置、露光装置およびデバイス製造方法
US5930324A (en) * 1996-04-03 1999-07-27 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method using the same
JP3286184B2 (ja) * 1996-09-25 2002-05-27 キヤノン株式会社 走査露光装置および方法
JP3689510B2 (ja) * 1996-11-15 2005-08-31 キヤノン株式会社 露光装置およびデバイス製造方法
JP3377165B2 (ja) * 1997-05-19 2003-02-17 キヤノン株式会社 半導体露光装置
JP3775772B2 (ja) * 1998-12-28 2006-05-17 キヤノン株式会社 露光装置、鏡筒および筐体ならびにそれらの運送方法
US7508487B2 (en) * 2000-06-01 2009-03-24 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
EP1160627A3 (de) * 2000-06-01 2004-08-18 ASML Netherlands B.V. Lithographischer Apparat, Verfahren zur Herstellung eines Artikels und damit hergestellter Artikel
JP2003115451A (ja) * 2001-07-30 2003-04-18 Canon Inc 露光装置及びそれを用いたデバイスの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197918A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd Ｘ線露光装置
US5138643A (en) * 1989-10-02 1992-08-11 Canon Kabushiki Kaisha Exposure apparatus
JP2766935B2 (ja) * 1989-10-20 1998-06-18 キヤノン株式会社 Ｘ線露光装置
EP0446076B1 (de) * 1990-03-09 1997-07-09 Canon Kabushiki Kaisha Belichtungsvorrichtung
DE69128207T2 (de) * 1990-03-13 1998-04-16 Canon Kk Belichtungsanordnung mittels Synchrotronstrahlung
JPH049613A (ja) * 1990-04-26 1992-01-14 Yamaha Corp 磁気エンコーダ
JP2893851B2 (ja) * 1990-04-26 1999-05-24 株式会社安川電機 絶***置検出方式
DE4117639A1 (de) * 1990-05-31 1991-12-05 Toshiba Kawasaki Kk Synchrotronstrahlungsgeraet
JP2959579B2 (ja) * 1990-06-19 1999-10-06 キヤノン株式会社 Ｘ線露光装置

Also Published As

Publication number Publication date
JPH05129189A (ja) 1993-05-25
CA2081642C (en) 1998-08-25
DE69216552T2 (de) 1997-04-24
US5347561A (en) 1994-09-13
EP0540302B1 (de) 1997-01-08
EP0540302A1 (de) 1993-05-05
JP3184582B2 (ja) 2001-07-09
CA2081642A1 (en) 1993-05-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: WESER & KOLLEGEN, 81245 MUENCHEN

8339 Ceased/non-payment of the annual fee