DE69214988D1 - Verfahren zur Niedrigtemperaturherstellung eines Diamanten von hoher Qualität durch chemische Dampfabscheidung - Google Patents
Verfahren zur Niedrigtemperaturherstellung eines Diamanten von hoher Qualität durch chemische DampfabscheidungInfo
- Publication number
- DE69214988D1 DE69214988D1 DE69214988T DE69214988T DE69214988D1 DE 69214988 D1 DE69214988 D1 DE 69214988D1 DE 69214988 T DE69214988 T DE 69214988T DE 69214988 T DE69214988 T DE 69214988T DE 69214988 D1 DE69214988 D1 DE 69214988D1
- Authority
- DE
- Germany
- Prior art keywords
- low temperature
- vapor deposition
- chemical vapor
- high quality
- temperature production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
- Y10S427/106—Utilizing plasma, e.g. corona, glow discharge, cold plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3096367A JPH04305096A (ja) | 1991-04-01 | 1991-04-01 | 高品質気相合成ダイヤモンドの低温形成法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69214988D1 true DE69214988D1 (de) | 1996-12-12 |
DE69214988T2 DE69214988T2 (de) | 1997-03-06 |
Family
ID=14163007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69214988T Expired - Fee Related DE69214988T2 (de) | 1991-04-01 | 1992-03-26 | Verfahren zur Niedrigtemperaturherstellung eines Diamanten von hoher Qualität durch chemische Dampfabscheidung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5391409A (de) |
EP (1) | EP0507497B1 (de) |
JP (1) | JPH04305096A (de) |
DE (1) | DE69214988T2 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6083570A (en) * | 1987-03-31 | 2000-07-04 | Lemelson; Jerome H. | Synthetic diamond coatings with intermediate amorphous metal bonding layers and methods of applying such coatings |
US6800095B1 (en) | 1994-08-12 | 2004-10-05 | Diamicron, Inc. | Diamond-surfaced femoral head for use in a prosthetic joint |
US6676704B1 (en) | 1994-08-12 | 2004-01-13 | Diamicron, Inc. | Prosthetic joint component having at least one sintered polycrystalline diamond compact articulation surface and substrate surface topographical features in said polycrystalline diamond compact |
US6596225B1 (en) | 2000-01-31 | 2003-07-22 | Diamicron, Inc. | Methods for manufacturing a diamond prosthetic joint component |
US7678325B2 (en) * | 1999-12-08 | 2010-03-16 | Diamicron, Inc. | Use of a metal and Sn as a solvent material for the bulk crystallization and sintering of diamond to produce biocompatbile biomedical devices |
US7494507B2 (en) * | 2000-01-30 | 2009-02-24 | Diamicron, Inc. | Articulating diamond-surfaced spinal implants |
US5714202A (en) * | 1995-06-07 | 1998-02-03 | Lemelson; Jerome H. | Synthetic diamond overlays for gas turbine engine parts having thermal barrier coatings |
US5688557A (en) * | 1995-06-07 | 1997-11-18 | Lemelson; Jerome H. | Method of depositing synthetic diamond coatings with intermediates bonding layers |
US5616372A (en) * | 1995-06-07 | 1997-04-01 | Syndia Corporation | Method of applying a wear-resistant diamond coating to a substrate |
US5942328A (en) * | 1996-02-29 | 1999-08-24 | International Business Machines Corporation | Low dielectric constant amorphous fluorinated carbon and method of preparation |
US5871805A (en) * | 1996-04-08 | 1999-02-16 | Lemelson; Jerome | Computer controlled vapor deposition processes |
US8591856B2 (en) | 1998-05-15 | 2013-11-26 | SCIO Diamond Technology Corporation | Single crystal diamond electrochemical electrode |
US6582513B1 (en) | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
US6858080B2 (en) | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
US6312798B1 (en) | 1998-09-25 | 2001-11-06 | Seagate Technology Llc | Magnetic recording medium having a nitrogen-doped hydrogenated carbon protective overcoat |
US7569176B2 (en) * | 1999-12-08 | 2009-08-04 | Diamicron, Inc. | Method for making a sintered superhard prosthetic joint component |
US7556763B2 (en) * | 1999-12-08 | 2009-07-07 | Diamicron, Inc. | Method of making components for prosthetic joints |
US20040199260A1 (en) * | 2000-01-30 | 2004-10-07 | Pope Bill J. | Prosthetic joint component having at least one sintered polycrystalline diamond compact articulation surface and substrate surface topographical features in said polycrystalline diamond compact |
US20100025898A1 (en) * | 2000-01-30 | 2010-02-04 | Pope Bill J | USE OF Ti AND Nb CEMENTED TiC IN PROSTHETIC JOINTS |
US6709463B1 (en) | 2000-01-30 | 2004-03-23 | Diamicron, Inc. | Prosthetic joint component having at least one solid polycrystalline diamond component |
US8603181B2 (en) * | 2000-01-30 | 2013-12-10 | Dimicron, Inc | Use of Ti and Nb cemented in TiC in prosthetic joints |
US20050203630A1 (en) * | 2000-01-30 | 2005-09-15 | Pope Bill J. | Prosthetic knee joint having at least one diamond articulation surface |
DE60135653D1 (de) * | 2000-06-15 | 2008-10-16 | Element Six Pty Ltd | Einkristalldiamant hergestellt durch cvd |
IL153381A0 (en) * | 2000-06-15 | 2003-07-06 | Element Six Pty Ltd | Thick single cyrstal diamond layer, method for making it and gemstones produced from the layer |
US6655845B1 (en) * | 2001-04-22 | 2003-12-02 | Diamicron, Inc. | Bearings, races and components thereof having diamond and other superhard surfaces |
US20030019106A1 (en) * | 2001-04-22 | 2003-01-30 | Diamicron, Inc. | Methods for making bearings, races and components thereof having diamond and other superhard surfaces |
US8555921B2 (en) | 2002-12-18 | 2013-10-15 | Vapor Technologies Inc. | Faucet component with coating |
US7866342B2 (en) * | 2002-12-18 | 2011-01-11 | Vapor Technologies, Inc. | Valve component for faucet |
US6904935B2 (en) * | 2002-12-18 | 2005-06-14 | Masco Corporation Of Indiana | Valve component with multiple surface layers |
US8220489B2 (en) | 2002-12-18 | 2012-07-17 | Vapor Technologies Inc. | Faucet with wear-resistant valve component |
US7866343B2 (en) * | 2002-12-18 | 2011-01-11 | Masco Corporation Of Indiana | Faucet |
US20050133277A1 (en) * | 2003-08-28 | 2005-06-23 | Diamicron, Inc. | Superhard mill cutters and related methods |
US8449991B2 (en) * | 2005-04-07 | 2013-05-28 | Dimicron, Inc. | Use of SN and pore size control to improve biocompatibility in polycrystalline diamond compacts |
EP2253733B1 (de) * | 2005-06-22 | 2012-03-21 | Element Six Limited | Hochfarbiger Diamant |
US20070026205A1 (en) * | 2005-08-01 | 2007-02-01 | Vapor Technologies Inc. | Article having patterned decorative coating |
GB0813491D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Diamond Material |
GB0813490D0 (en) | 2008-07-23 | 2008-08-27 | Element Six Ltd | Solid state material |
US8663359B2 (en) * | 2009-06-26 | 2014-03-04 | Dimicron, Inc. | Thick sintered polycrystalline diamond and sintered jewelry |
US8945301B2 (en) * | 2010-08-05 | 2015-02-03 | University Of Houston System | Method of producing diamond powder and doped diamonds |
US9783885B2 (en) * | 2010-08-11 | 2017-10-10 | Unit Cell Diamond Llc | Methods for producing diamond mass and apparatus therefor |
CN113652746B (zh) * | 2021-10-21 | 2022-01-25 | 天津本钻科技有限公司 | 一种提高单晶金刚石质量的方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5930709A (ja) * | 1982-08-13 | 1984-02-18 | Toa Nenryo Kogyo Kk | 炭素膜及び/又は炭素粒子の製造方法 |
FR2590808B1 (fr) * | 1985-12-04 | 1989-09-15 | Canon Kk | Dispositif de soufflage de particules fines |
EP0245688B1 (de) * | 1986-04-28 | 1991-12-27 | Nissin Electric Company, Limited | Verfahren zur Herstellung einer Diamantenschicht |
KR900008505B1 (ko) * | 1987-02-24 | 1990-11-24 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | 탄소 석출을 위한 마이크로파 강화 cvd 방법 |
GB8810111D0 (en) * | 1988-04-28 | 1988-06-02 | Jones B L | Diamond growth |
US4991971A (en) * | 1989-02-13 | 1991-02-12 | United Technologies Corporation | Fiber optic scatterometer for measuring optical surface roughness |
US5094878A (en) * | 1989-06-21 | 1992-03-10 | Nippon Soken, Inc. | Process for forming diamond film |
US5071677A (en) * | 1990-05-24 | 1991-12-10 | Houston Advanced Research Center | Halogen-assisted chemical vapor deposition of diamond |
-
1991
- 1991-04-01 JP JP3096367A patent/JPH04305096A/ja active Pending
-
1992
- 1992-03-26 EP EP92302613A patent/EP0507497B1/de not_active Expired - Lifetime
- 1992-03-26 DE DE69214988T patent/DE69214988T2/de not_active Expired - Fee Related
- 1992-04-01 US US07/861,540 patent/US5391409A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0507497B1 (de) | 1996-11-06 |
US5391409A (en) | 1995-02-21 |
DE69214988T2 (de) | 1997-03-06 |
JPH04305096A (ja) | 1992-10-28 |
EP0507497A1 (de) | 1992-10-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Free format text: WESER & KOLLEGEN, 81245 MUENCHEN |
|
8339 | Ceased/non-payment of the annual fee |