DE69133003T2 - Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate - Google Patents

Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate

Info

Publication number
DE69133003T2
DE69133003T2 DE69133003T DE69133003T DE69133003T2 DE 69133003 T2 DE69133003 T2 DE 69133003T2 DE 69133003 T DE69133003 T DE 69133003T DE 69133003 T DE69133003 T DE 69133003T DE 69133003 T2 DE69133003 T2 DE 69133003T2
Authority
DE
Germany
Prior art keywords
over
floating gate
insulating layer
wall portion
single transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69133003T
Other languages
English (en)
Other versions
DE69133003D1 (de
Inventor
Bing Yeh
Ching-Shi Jenq
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Silicon Storage Technology Inc
Original Assignee
Silicon Storage Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US07/467,907 external-priority patent/US5029130A/en
Priority claimed from US07/468,003 external-priority patent/US5045488A/en
Priority claimed from US07/467,918 external-priority patent/US5067108A/en
Application filed by Silicon Storage Technology Inc filed Critical Silicon Storage Technology Inc
Publication of DE69133003D1 publication Critical patent/DE69133003D1/de
Application granted granted Critical
Publication of DE69133003T2 publication Critical patent/DE69133003T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE69133003T 1990-01-22 1991-01-18 Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate Expired - Fee Related DE69133003T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US07/467,907 US5029130A (en) 1990-01-22 1990-01-22 Single transistor non-valatile electrically alterable semiconductor memory device
US07/468,003 US5045488A (en) 1990-01-22 1990-01-22 Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device
US07/467,918 US5067108A (en) 1990-01-22 1990-01-22 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate
PCT/US1991/000433 WO1991011026A1 (en) 1990-01-22 1991-01-18 Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate

Publications (2)

Publication Number Publication Date
DE69133003D1 DE69133003D1 (de) 2002-06-13
DE69133003T2 true DE69133003T2 (de) 2002-12-12

Family

ID=27413033

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69133003T Expired - Fee Related DE69133003T2 (de) 1990-01-22 1991-01-18 Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate

Country Status (5)

Country Link
EP (1) EP0464196B1 (de)
AT (1) ATE217448T1 (de)
CA (1) CA2051686C (de)
DE (1) DE69133003T2 (de)
WO (1) WO1991011026A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3854629B2 (ja) * 1991-04-09 2006-12-06 シリコン・ストーリッジ・テクノロジー・インク メモリーアレイ装置、メモリーセル装置及びそのプログラミング方法
US9293204B2 (en) * 2013-04-16 2016-03-22 Silicon Storage Technology, Inc. Non-volatile memory cell with self aligned floating and erase gates, and method of making same
EP2860767A1 (de) 2013-10-10 2015-04-15 ams AG CMOS-kompatible UV-Sensorvorrichtung und Verfahren zur Herstellung einer CMOS-kompatiblen UV-Sensorvorrichtung

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA119299A (en) * 1909-05-05 1909-07-06 George Stockham Emerick Air separator
US4122544A (en) * 1976-12-27 1978-10-24 Texas Instruments Incorporated Electrically alterable floating gate semiconductor memory device with series enhancement transistor
JPS5841659B2 (ja) * 1977-08-30 1983-09-13 株式会社東芝 絶縁膜の形成方法
JPS5519851A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Manufacture of non-volatile memories
US4332077A (en) * 1979-08-10 1982-06-01 Rca Corporation Method of making electrically programmable control gate injected floating gate solid state memory transistor
JPS56120166A (en) * 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
IT1209227B (it) * 1980-06-04 1989-07-16 Sgs Microelettronica Spa Cella di memoria non volatile a 'gate' flottante elettricamente alterabile.
US4366555A (en) * 1980-08-01 1982-12-28 National Semiconductor Corporation Electrically erasable programmable read only memory
JPS6059750B2 (ja) * 1980-12-29 1985-12-26 富士通株式会社 不揮発性半導体記憶装置
JPS57112078A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of electrically rewritable fixed memory
JPS58123774A (ja) * 1982-01-18 1983-07-23 Fujitsu Ltd 不揮発性半導体記憶装置の製造方法
DE3205858A1 (de) * 1982-02-18 1983-08-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von dynamischen halbleiter-speicherzellen mit wahlfreiem zugriff (ram) nach der doppel-polysilizium-gate-technologie
JPS58209164A (ja) * 1982-05-31 1983-12-06 Toshiba Corp 不揮発性半導体メモリ装置の製造方法
US4458407A (en) * 1983-04-01 1984-07-10 International Business Machines Corporation Process for fabricating semi-conductive oxide between two poly silicon gate electrodes
US4822750A (en) * 1983-08-29 1989-04-18 Seeq Technology, Inc. MOS floating gate memory cell containing tunneling diffusion region in contact with drain and extending under edges of field oxide
JPS59130475A (ja) * 1983-11-28 1984-07-27 Hitachi Ltd 半導体メモリ回路装置の製造方法
US4561907A (en) * 1984-07-12 1985-12-31 Bruha Raicu Process for forming low sheet resistance polysilicon having anisotropic etch characteristics
IT1213218B (it) * 1984-09-25 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto.
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
US4656729A (en) * 1985-03-25 1987-04-14 International Business Machines Corp. Dual electron injection structure and process with self-limiting oxidation barrier
JPS62102565A (ja) * 1985-10-29 1987-05-13 Sony Corp 半導体装置
US4814291A (en) * 1986-02-25 1989-03-21 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making devices having thin dielectric layers
JPS6336575A (ja) * 1986-07-30 1988-02-17 Toshiba Corp 半導体装置の製造方法
US4814286A (en) * 1987-02-02 1989-03-21 Intel Corporation EEPROM cell with integral select transistor
GB2200795B (en) * 1987-02-02 1990-10-03 Intel Corp Eprom cell with integral select transistor
US4853895A (en) * 1987-11-30 1989-08-01 Texas Instruments Incorporated EEPROM including programming electrode extending through the control gate electrode
US4964143A (en) * 1988-03-02 1990-10-16 Advanced Micro Devices, Inc. EPROM element employing self-aligning process
US4882649A (en) * 1988-03-29 1989-11-21 Texas Instruments Incorporated Nitride/oxide/nitride capacitor dielectric
US4912676A (en) * 1988-08-09 1990-03-27 Texas Instruments, Incorporated Erasable programmable memory

Also Published As

Publication number Publication date
CA2051686C (en) 2001-10-23
CA2051686A1 (en) 1991-07-23
DE69133003D1 (de) 2002-06-13
ATE217448T1 (de) 2002-05-15
EP0464196B1 (de) 2002-05-08
WO1991011026A1 (en) 1991-07-25
EP0464196A1 (de) 1992-01-08
EP0464196A4 (en) 1993-08-18

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee