IT1213218B - Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto. - Google Patents

Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto.

Info

Publication number
IT1213218B
IT1213218B IT8422812A IT2281284A IT1213218B IT 1213218 B IT1213218 B IT 1213218B IT 8422812 A IT8422812 A IT 8422812A IT 2281284 A IT2281284 A IT 2281284A IT 1213218 B IT1213218 B IT 1213218B
Authority
IT
Italy
Prior art keywords
manufacture
volatile memory
small size
thin oxide
memory cell
Prior art date
Application number
IT8422812A
Other languages
English (en)
Other versions
IT8422812A0 (it
Inventor
Andrea Ravaglia
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT8422812A priority Critical patent/IT1213218B/it
Publication of IT8422812A0 publication Critical patent/IT8422812A0/it
Priority to US06/764,985 priority patent/US4622737A/en
Priority to DE8585201337T priority patent/DE3581580D1/de
Priority to EP85201337A priority patent/EP0177986B1/en
Priority to JP60209042A priority patent/JPS61166079A/ja
Application granted granted Critical
Publication of IT1213218B publication Critical patent/IT1213218B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
IT8422812A 1984-09-25 1984-09-25 Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto. IT1213218B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8422812A IT1213218B (it) 1984-09-25 1984-09-25 Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto.
US06/764,985 US4622737A (en) 1984-09-25 1985-08-12 Process for the fabrication of a nonvolatile memory cell with very small thin oxide area and cell
DE8585201337T DE3581580D1 (de) 1984-09-25 1985-08-21 Verfahren zum herstellen einer nichtfluechtigen speicherzelle mit einem sehr kleinen, duennen oxidgebiet und eine nach diesem verfahren hergestellte zelle.
EP85201337A EP0177986B1 (en) 1984-09-25 1985-08-21 Process for the fabrication of a nonvolatile memory cell with very small thin oxide area and cell obtained by said process
JP60209042A JPS61166079A (ja) 1984-09-25 1985-09-24 持久記憶セル及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8422812A IT1213218B (it) 1984-09-25 1984-09-25 Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto.

Publications (2)

Publication Number Publication Date
IT8422812A0 IT8422812A0 (it) 1984-09-25
IT1213218B true IT1213218B (it) 1989-12-14

Family

ID=11200721

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8422812A IT1213218B (it) 1984-09-25 1984-09-25 Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto.

Country Status (5)

Country Link
US (1) US4622737A (it)
EP (1) EP0177986B1 (it)
JP (1) JPS61166079A (it)
DE (1) DE3581580D1 (it)
IT (1) IT1213218B (it)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4939558A (en) * 1985-09-27 1990-07-03 Texas Instruments Incorporated EEPROM memory cell and driving circuitry
US4742492A (en) * 1985-09-27 1988-05-03 Texas Instruments Incorporated EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor
US5008722A (en) * 1986-03-27 1991-04-16 Texas Instruments Incorporated Non-volatile memory
IT1191561B (it) * 1986-06-03 1988-03-23 Sgs Microelettrica Spa Dispositivo di memoria non labile a semiconduttore con porta non connessa (floating gate) alterabile elettricamente
JPS6480070A (en) * 1987-09-21 1989-03-24 Mitsubishi Electric Corp Semiconductor integrated circuit
US5017980A (en) * 1988-07-15 1991-05-21 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell
US5012307A (en) * 1988-07-15 1991-04-30 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory
US5156991A (en) * 1988-02-05 1992-10-20 Texas Instruments Incorporated Fabricating an electrically-erasable, electrically-programmable read-only memory having a tunnel window insulator and thick oxide isolation between wordlines
JPH0715952B2 (ja) * 1988-04-13 1995-02-22 株式会社東芝 半導体記憶装置
DE3816358A1 (de) * 1988-05-13 1989-11-23 Eurosil Electronic Gmbh Nichtfluechtige speicherzelle und verfahren zur herstellung
US5155055A (en) * 1988-07-15 1992-10-13 Texas Instruments Incorporated Method of making an electrically-erasable, electrically-programmable read-only memory cell with self-aligned tunnel
US5008721A (en) * 1988-07-15 1991-04-16 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell with self-aligned tunnel
US5262846A (en) * 1988-11-14 1993-11-16 Texas Instruments Incorporated Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates
IT1229131B (it) * 1989-03-09 1991-07-22 Sgs Thomson Microelectronics Matrice di memoria eprom con struttura a tovaglia e procedimento per la sua fabbricazione.
US5045488A (en) * 1990-01-22 1991-09-03 Silicon Storage Technology, Inc. Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device
DE69133003T2 (de) * 1990-01-22 2002-12-12 Silicon Storage Tech Inc Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate
US4964080A (en) * 1990-03-09 1990-10-16 Intel Corporation Three-dimensional memory cell with integral select transistor
US5057446A (en) * 1990-08-06 1991-10-15 Texas Instruments Incorporated Method of making an EEPROM with improved capacitive coupling between control gate and floating gate
US5273926A (en) * 1991-06-27 1993-12-28 Texas Instruments Incorporated Method of making flash EEPROM or merged FAMOS cell without alignment sensitivity
US5225700A (en) * 1991-06-28 1993-07-06 Texas Instruments Incorporated Circuit and method for forming a non-volatile memory cell
US5218568A (en) * 1991-12-17 1993-06-08 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell, an array of such cells and methods for making and using the same
US5640031A (en) * 1993-09-30 1997-06-17 Keshtbod; Parviz Spacer flash cell process
US5479368A (en) * 1993-09-30 1995-12-26 Cirrus Logic, Inc. Spacer flash cell device with vertically oriented floating gate
JP3159850B2 (ja) * 1993-11-08 2001-04-23 シャープ株式会社 不揮発性半導体記憶装置及びその製造方法
US5376572A (en) * 1994-05-06 1994-12-27 United Microelectronics Corporation Method of making an electrically erasable programmable memory device with improved erase and write operation
US5424233A (en) * 1994-05-06 1995-06-13 United Microflectronics Corporation Method of making electrically programmable and erasable memory device with a depression
US5680345A (en) * 1995-06-06 1997-10-21 Advanced Micro Devices, Inc. Nonvolatile memory cell with vertical gate overlap and zero birds beaks
DE19620032C2 (de) 1996-05-17 1998-07-09 Siemens Ag Halbleiterbauelement mit Kompensationsimplantation und Herstellverfahren
DE19638969C2 (de) * 1996-09-23 2002-05-16 Mosel Vitelic Inc EEPROM mit einem Polydistanz-Floating-Gate und Verfahren zu deren Herstellung
US6147379A (en) * 1998-04-13 2000-11-14 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7170130B2 (en) * 2004-08-11 2007-01-30 Spansion Llc Memory cell with reduced DIBL and Vss resistance

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
US4409723A (en) * 1980-04-07 1983-10-18 Eliyahou Harari Method of forming non-volatile EPROM and EEPROM with increased efficiency
JPS5776877A (en) * 1980-10-30 1982-05-14 Fujitsu Ltd Semiconductor memory device and manufacture thereof
JPS5834979A (ja) * 1981-08-27 1983-03-01 Nec Corp 不揮発性半導体記憶装置およびその製造方法
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS58130571A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 半導体装置
JPS5927543A (ja) * 1982-08-06 1984-02-14 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0177986B1 (en) 1991-01-30
EP0177986A3 (en) 1988-01-20
EP0177986A2 (en) 1986-04-16
IT8422812A0 (it) 1984-09-25
JPS61166079A (ja) 1986-07-26
US4622737A (en) 1986-11-18
JPH0587031B2 (it) 1993-12-15
DE3581580D1 (de) 1991-03-07

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970929