DE69127656D1 - Verfahren zum Herstellen von Dünnfilmtransistoren - Google Patents
Verfahren zum Herstellen von DünnfilmtransistorenInfo
- Publication number
- DE69127656D1 DE69127656D1 DE69127656T DE69127656T DE69127656D1 DE 69127656 D1 DE69127656 D1 DE 69127656D1 DE 69127656 T DE69127656 T DE 69127656T DE 69127656 T DE69127656 T DE 69127656T DE 69127656 D1 DE69127656 D1 DE 69127656D1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- film transistors
- manufacturing thin
- manufacturing
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2145069A JP2700277B2 (ja) | 1990-06-01 | 1990-06-01 | 薄膜トランジスタの作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69127656D1 true DE69127656D1 (de) | 1997-10-23 |
DE69127656T2 DE69127656T2 (de) | 1998-04-30 |
Family
ID=15376664
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69127656T Expired - Lifetime DE69127656T2 (de) | 1990-06-01 | 1991-06-03 | Verfahren zum Herstellen von Dünnfilmtransistoren |
Country Status (5)
Country | Link |
---|---|
US (3) | US6458200B1 (de) |
EP (1) | EP0459836B1 (de) |
JP (1) | JP2700277B2 (de) |
KR (1) | KR950007355B1 (de) |
DE (1) | DE69127656T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2700277B2 (ja) * | 1990-06-01 | 1998-01-19 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US5930608A (en) | 1992-02-21 | 1999-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a thin film transistor in which the channel region of the transistor consists of two portions of differing crystallinity |
JPH06124913A (ja) | 1992-06-26 | 1994-05-06 | Semiconductor Energy Lab Co Ltd | レーザー処理方法 |
US5403762A (en) * | 1993-06-30 | 1995-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a TFT |
JP3587537B2 (ja) | 1992-12-09 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN100359633C (zh) * | 1992-12-09 | 2008-01-02 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
TW425637B (en) | 1993-01-18 | 2001-03-11 | Semiconductor Energy Lab | Method of fabricating mis semiconductor device |
US6331717B1 (en) | 1993-08-12 | 2001-12-18 | Semiconductor Energy Laboratory Co. Ltd. | Insulated gate semiconductor device and process for fabricating the same |
JP3173926B2 (ja) | 1993-08-12 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置 |
US5681760A (en) * | 1995-01-03 | 1997-10-28 | Goldstar Electron Co., Ltd. | Method for manufacturing thin film transistor |
JP3778456B2 (ja) | 1995-02-21 | 2006-05-24 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型薄膜半導体装置の作製方法 |
JP3917205B2 (ja) * | 1995-11-30 | 2007-05-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6872607B2 (en) * | 2000-03-21 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US7291522B2 (en) * | 2004-10-28 | 2007-11-06 | Hewlett-Packard Development Company, L.P. | Semiconductor devices and methods of making |
JP6003321B2 (ja) * | 2012-07-18 | 2016-10-05 | Jfeスチール株式会社 | 方向性電磁鋼板の製造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4174217A (en) * | 1974-08-02 | 1979-11-13 | Rca Corporation | Method for making semiconductor structure |
JPS558026A (en) | 1978-06-30 | 1980-01-21 | Matsushita Electric Ind Co Ltd | Semi-conductor device manufacturing method |
EP0171509B1 (de) * | 1979-07-24 | 1990-10-31 | Hughes Aircraft Company | Verfahren zur Laserbehandlung für "Silizium auf Saphir" |
US4266986A (en) * | 1979-11-29 | 1981-05-12 | Bell Telephone Laboratories, Incorporated | Passivation of defects in laser annealed semiconductors |
JPS5785262A (en) * | 1980-11-17 | 1982-05-27 | Toshiba Corp | Manufacture of metal oxide semiconductor type semiconductor device |
JPS5814524A (ja) * | 1981-07-17 | 1983-01-27 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS58164267A (ja) | 1982-03-25 | 1983-09-29 | Seiko Epson Corp | 薄膜シリコントランジスタの製造方法 |
US4769338A (en) * | 1984-05-14 | 1988-09-06 | Energy Conversion Devices, Inc. | Thin film field effect transistor and method of making same |
US4727044A (en) * | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
JPS61135110A (ja) * | 1984-12-05 | 1986-06-23 | Fujitsu Ltd | 半導体装置の製造方法 |
DE3689735T2 (de) * | 1985-08-02 | 1994-06-30 | Semiconductor Energy Lab | Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen. |
US4933296A (en) * | 1985-08-02 | 1990-06-12 | General Electric Company | N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
JPH07120802B2 (ja) * | 1985-08-08 | 1995-12-20 | ソニー株式会社 | 半導体装置の製造方法 |
JPS6239067A (ja) | 1985-08-13 | 1987-02-20 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
JPS62254467A (ja) * | 1986-04-28 | 1987-11-06 | Seiko Instr & Electronics Ltd | 薄膜トランジスタの製造方法 |
JPS63200572A (ja) | 1987-02-17 | 1988-08-18 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
JPS63250178A (ja) | 1987-04-07 | 1988-10-18 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
JPS63292682A (ja) * | 1987-05-26 | 1988-11-29 | Seiko Instr & Electronics Ltd | 薄膜半導体装置の製造方法 |
JPH07114184B2 (ja) * | 1987-07-27 | 1995-12-06 | 日本電信電話株式会社 | 薄膜形シリコン半導体装置およびその製造方法 |
US4743567A (en) * | 1987-08-11 | 1988-05-10 | North American Philips Corp. | Method of forming thin, defect-free, monocrystalline layers of semiconductor materials on insulators |
JPH01162376A (ja) * | 1987-12-18 | 1989-06-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH02130912A (ja) | 1988-11-11 | 1990-05-18 | Seiko Epson Corp | 薄膜半導体装置 |
JP2867264B2 (ja) * | 1989-02-28 | 1999-03-08 | 株式会社日立製作所 | 液晶表示装置およびその製造方法 |
JP2832991B2 (ja) * | 1989-04-14 | 1998-12-09 | ソニー株式会社 | 多層配線形成方法および連続処理装置 |
JP2700277B2 (ja) * | 1990-06-01 | 1998-01-19 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US5162239A (en) * | 1990-12-27 | 1992-11-10 | Xerox Corporation | Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors |
GB9114018D0 (en) * | 1991-06-28 | 1991-08-14 | Philips Electronic Associated | Thin-film transistor manufacture |
US5424244A (en) * | 1992-03-26 | 1995-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Process for laser processing and apparatus for use in the same |
-
1990
- 1990-06-01 JP JP2145069A patent/JP2700277B2/ja not_active Expired - Lifetime
-
1991
- 1991-06-01 KR KR1019910009163A patent/KR950007355B1/ko not_active IP Right Cessation
- 1991-06-03 DE DE69127656T patent/DE69127656T2/de not_active Expired - Lifetime
- 1991-06-03 EP EP91305013A patent/EP0459836B1/de not_active Expired - Lifetime
-
1993
- 1993-07-12 US US08/089,650 patent/US6458200B1/en not_active Expired - Lifetime
-
2002
- 2002-02-21 US US10/078,354 patent/US6740547B2/en not_active Expired - Fee Related
-
2004
- 2004-05-25 US US10/852,700 patent/US7018874B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0459836A2 (de) | 1991-12-04 |
US6740547B2 (en) | 2004-05-25 |
DE69127656T2 (de) | 1998-04-30 |
JP2700277B2 (ja) | 1998-01-19 |
JPH0437144A (ja) | 1992-02-07 |
EP0459836A3 (en) | 1993-02-24 |
EP0459836B1 (de) | 1997-09-17 |
US20030017656A1 (en) | 2003-01-23 |
US6458200B1 (en) | 2002-10-01 |
KR950007355B1 (ko) | 1995-07-10 |
US7018874B2 (en) | 2006-03-28 |
US20050009254A1 (en) | 2005-01-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |