DE69114345D1 - Halbleiterspeichereinrichtung. - Google Patents
Halbleiterspeichereinrichtung.Info
- Publication number
- DE69114345D1 DE69114345D1 DE69114345T DE69114345T DE69114345D1 DE 69114345 D1 DE69114345 D1 DE 69114345D1 DE 69114345 T DE69114345 T DE 69114345T DE 69114345 T DE69114345 T DE 69114345T DE 69114345 D1 DE69114345 D1 DE 69114345D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- semiconductor
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7921690 | 1990-03-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69114345D1 true DE69114345D1 (de) | 1995-12-14 |
DE69114345T2 DE69114345T2 (de) | 1996-05-23 |
Family
ID=13683736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69114345T Expired - Lifetime DE69114345T2 (de) | 1990-03-28 | 1991-03-27 | Halbleiterspeichereinrichtung. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5097313A (de) |
EP (1) | EP0454998B1 (de) |
KR (1) | KR940004518B1 (de) |
DE (1) | DE69114345T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5835395A (en) * | 1991-02-07 | 1998-11-10 | Texas Instruments Incorporated | Eprom pinout option |
JPH0798979A (ja) * | 1993-09-29 | 1995-04-11 | Toshiba Corp | 半導体記憶装置 |
US5537346A (en) * | 1994-05-20 | 1996-07-16 | Samsung Electronics Co., Ltd. | Semiconductor memory device obtaining high bandwidth and signal line layout method thereof |
JP3135795B2 (ja) * | 1994-09-22 | 2001-02-19 | 東芝マイクロエレクトロニクス株式会社 | ダイナミック型メモリ |
US5815456A (en) * | 1996-06-19 | 1998-09-29 | Cirrus Logic, Inc. | Multibank -- multiport memories and systems and methods using the same |
US5802005A (en) * | 1996-09-23 | 1998-09-01 | Texas Instruments Incorporated | Four bit pre-fetch sDRAM column select architecture |
KR100280287B1 (ko) | 1998-08-28 | 2001-03-02 | 윤종용 | 반도체 메모리 장치 |
KR100481174B1 (ko) * | 2002-08-02 | 2005-04-07 | 삼성전자주식회사 | 메모리 코어의 전 영역에서 동일한 스큐를 가지는 반도체메모리 장치 |
US6975527B1 (en) * | 2002-11-12 | 2005-12-13 | Integrated Device Technology, Inc. | Memory device layout |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0344873B1 (de) * | 1982-06-30 | 1993-12-15 | Fujitsu Limited | Integrierte Halbleiterschaltungsanordnung |
EP0166642A3 (de) * | 1984-05-30 | 1989-02-22 | Fujitsu Limited | Blockunterteiltes Halbleiterspeichergerät mit unterteilten Bitzeilen |
US4658377A (en) * | 1984-07-26 | 1987-04-14 | Texas Instruments Incorporated | Dynamic memory array with segmented bit lines |
US4962322A (en) * | 1988-12-05 | 1990-10-09 | Texas Instruments Incorporated | Nonvolatible capacitor random access memory |
JPS6367771A (ja) * | 1986-09-09 | 1988-03-26 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4945393A (en) * | 1988-06-21 | 1990-07-31 | At&T Bell Laboratories | Floating gate memory circuit and apparatus |
JP2683919B2 (ja) * | 1988-07-29 | 1997-12-03 | 三菱電機株式会社 | 半導体記憶装置 |
-
1991
- 1991-03-27 DE DE69114345T patent/DE69114345T2/de not_active Expired - Lifetime
- 1991-03-27 EP EP91104961A patent/EP0454998B1/de not_active Expired - Lifetime
- 1991-03-28 KR KR1019910004901A patent/KR940004518B1/ko not_active IP Right Cessation
- 1991-03-28 US US07/676,509 patent/US5097313A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0454998A3 (en) | 1993-03-17 |
EP0454998B1 (de) | 1995-11-08 |
US5097313A (en) | 1992-03-17 |
DE69114345T2 (de) | 1996-05-23 |
KR940004518B1 (ko) | 1994-05-25 |
EP0454998A2 (de) | 1991-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69133361D1 (de) | Halbleiterspeichervorrichtung | |
DE69132284D1 (de) | Halbleiterspeicheranordnung | |
NL191814C (nl) | Halfgeleidergeheugeninrichting. | |
DE68923505D1 (de) | Halbleiterspeicheranordnung. | |
DE3889097D1 (de) | Halbleiterspeicheranordnung. | |
DE69123666D1 (de) | Halbleiterspeicheranordnung | |
DE69125671D1 (de) | Halbleiter-Speicherbauteil | |
DE68918367D1 (de) | Halbleiterspeicheranordnung. | |
DE69125206D1 (de) | Halbleiterspeicheranordnung | |
DE69022537D1 (de) | Halbleiterspeicheranordnung. | |
DE69123379D1 (de) | Halbleiterspeichervorrichtung | |
DE69121801D1 (de) | Halbleiterspeicheranordnung | |
DE69125535D1 (de) | Halbleiterspeicheranordnung | |
DE69127155D1 (de) | Halbleiterspeicheranordnung | |
DE68923624D1 (de) | Halbleiterspeicheranordnung. | |
DE69017518D1 (de) | Halbleiterspeicheranordnung. | |
DE69126559D1 (de) | Halbleiterspeicheranordnung | |
DE69128061D1 (de) | Halbleiterspeicheranordnung | |
DE69125339D1 (de) | Halbleiterspeicheranordnung | |
DE68924080D1 (de) | Halbleiterspeichervorrichtung. | |
DE69128819D1 (de) | Halbleiterspeicheranordnung | |
DE69115079D1 (de) | Nichtflüchtige Halbleitervorrichtung. | |
DE69123294D1 (de) | Halbleiterspeicheranordnung | |
DE69125734D1 (de) | Halbleiterspeicheranordnung | |
DE69124286D1 (de) | Halbleiterspeicheranordnung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC CORP., TOKIO/TOKYO, JP Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |