DE69112166D1 - Plasmaquellenvorrichtung für Ionenimplantierung. - Google Patents

Plasmaquellenvorrichtung für Ionenimplantierung.

Info

Publication number: DE69112166D1
Authority: DE; Germany
Prior art keywords: source device; ion implantation; plasma source; plasma; implantation
Prior art date: 1990-10-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69112166T

Other languages

English (en)

Other versions

DE69112166T2 (de

Inventor

Jesse N Matossian

Dan M Goebel

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

DirecTV Group Inc

Original Assignee

Hughes Aircraft Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-10-10

Filing date

1991-10-09

Publication date

1995-09-21

1991-10-09 Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co

1995-09-21 Application granted granted Critical

1995-09-21 Publication of DE69112166D1 publication Critical patent/DE69112166D1/de

1996-01-04 Publication of DE69112166T2 publication Critical patent/DE69112166T2/de

2011-10-10 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32688—Multi-cusp fields
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Plasma & Fusion (AREA)
Physics & Mathematics (AREA)
Analytical Chemistry (AREA)
Chemical Kinetics & Catalysis (AREA)
Spectroscopy & Molecular Physics (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physical Vapour Deposition (AREA)
Electron Sources, Ion Sources (AREA)

DE69112166T 1990-10-10 1991-10-09 Plasmaquellenvorrichtung für Ionenimplantierung. Expired - Lifetime DE69112166T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US59512390A	1990-10-10	1990-10-10

Publications (2)

Publication Number	Publication Date
DE69112166D1 true DE69112166D1 (de)	1995-09-21
DE69112166T2 DE69112166T2 (de)	1996-01-04

Family

ID=24381836

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69112166T Expired - Lifetime DE69112166T2 (de)	1990-10-10	1991-10-09	Plasmaquellenvorrichtung für Ionenimplantierung.

Country Status (6)

Country	Link
EP (1)	EP0480688B1 (de)
JP (1)	JP2512649B2 (de)
KR (1)	KR950011847B1 (de)
CA (1)	CA2052080C (de)
DE (1)	DE69112166T2 (de)
MX (1)	MX9101488A (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5330800A (en) *	1992-11-04	1994-07-19	Hughes Aircraft Company	High impedance plasma ion implantation method and apparatus
US5289010A (en) *	1992-12-08	1994-02-22	Wisconsin Alumni Research Foundation	Ion purification for plasma ion implantation
DE19538903A1 (de) *	1995-10-19	1997-04-24	Rossendorf Forschzent	Verfahren zur Implantation von Ionen in leitende bzw. halbleitende Werkstücke mittels Plasmaimmersionsionenimplantation (P III) und Implantationskammer zur Durchführung des Verfahrens
US6368678B1 (en) *	1998-05-13	2002-04-09	Terry Bluck	Plasma processing system and method
US6101972A (en) *	1998-05-13	2000-08-15	Intevac, Inc.	Plasma processing system and method
US6182604B1 (en) *	1999-10-27	2001-02-06	Varian Semiconductor Equipment Associates, Inc.	Hollow cathode for plasma doping system
US6633132B2 (en)	2001-01-23	2003-10-14	Wafermasters Inc.	Plasma gereration apparatus and method
KR100416715B1 (ko) *	2001-02-27	2004-01-31	한국과학기술연구원	펄스 플라즈마를 이용한 이온 주입 방법 및 그 시스템
JP3611324B2 (ja) *	2002-06-03	2005-01-19	信越化学工業株式会社	マグネトロンプラズマ用磁場発生装置
KR100509804B1 (ko) *	2003-02-04	2005-08-24	동부아남반도체 주식회사	이온주입장치의 앤드스테이션
US9771648B2 (en)	2004-08-13	2017-09-26	Zond, Inc.	Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US7095179B2 (en)	2004-02-22	2006-08-22	Zond, Inc.	Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US9123508B2 (en)	2004-02-22	2015-09-01	Zond, Llc	Apparatus and method for sputtering hard coatings
JP5237820B2 (ja) *	2006-11-15	2013-07-17	パナソニック株式会社	プラズマドーピング方法
US8142607B2 (en) *	2008-08-28	2012-03-27	Varian Semiconductor Equipment Associates, Inc.	High density helicon plasma source for wide ribbon ion beam generation
US7999479B2 (en) *	2009-04-16	2011-08-16	Varian Semiconductor Equipment Associates, Inc.	Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
FR2998707B1 (fr)	2012-11-27	2016-01-01	Ion Beam Services	Implanteur ionique pourvu d'une pluralite de corps de source plasma
DE102012024340A1 (de) *	2012-12-13	2014-06-18	Oerlikon Trading Ag, Trübbach	Plasmaquelle
CN104411082B (zh) *	2014-11-12	2017-12-19	中国科学院深圳先进技术研究院	等离子源***和等离子生成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4800281A (en) *	1984-09-24	1989-01-24	Hughes Aircraft Company	Compact penning-discharge plasma source
US4764394A (en) *	1987-01-20	1988-08-16	Wisconsin Alumni Research Foundation	Method and apparatus for plasma source ion implantation
US4776923A (en) *	1987-01-20	1988-10-11	Machine Technology, Inc.	Plasma product treatment apparatus and methods and gas transport systems for use therein
JPS63239948A (ja) *	1987-03-27	1988-10-05	Nec Corp	ドライエツチング装置
JPH0211762A (ja) *	1988-06-28	1990-01-16	Masanobu Nunogaki	表面加工容器中高エネルギーイオン注入法
JPH07101685B2 (ja) *	1989-01-26	1995-11-01	富士通株式会社	マイクロ波プラズマ処理装置

1991
- 1991-09-23 CA CA002052080A patent/CA2052080C/en not_active Expired - Lifetime
- 1991-10-07 JP JP3285542A patent/JP2512649B2/ja not_active Expired - Lifetime
- 1991-10-09 DE DE69112166T patent/DE69112166T2/de not_active Expired - Lifetime
- 1991-10-09 KR KR1019910017683A patent/KR950011847B1/ko not_active IP Right Cessation
- 1991-10-09 EP EP91309240A patent/EP0480688B1/de not_active Expired - Lifetime
- 1991-10-09 MX MX9101488A patent/MX9101488A/es unknown

Also Published As

Publication number	Publication date
KR920009271A (ko)	1992-05-28
CA2052080C (en)	1997-01-14
EP0480688A3 (en)	1992-07-01
DE69112166T2 (de)	1996-01-04
CA2052080A1 (en)	1992-04-11
EP0480688B1 (de)	1995-08-16
JPH04264346A (ja)	1992-09-21
JP2512649B2 (ja)	1996-07-03
MX9101488A (es)	1992-06-05
KR950011847B1 (ko)	1995-10-11
EP0480688A2 (de)	1992-04-15

Legal Events

Date	Code	Title	Description
1996-09-12	8364	No opposition during term of opposition
2001-03-22	8327	Change in the person/name/address of the patent owner	Owner name: HUGHES ELECTRONICS CORP., EL SEGUNDO, CALIF., US

Publication	Publication Date	Title
DE69507776D1 (de)	1999-03-25	Ionenquelle für ein Ionen-Implantationsgerät
DE69112166D1 (de)	1995-09-21	Plasmaquellenvorrichtung für Ionenimplantierung.
DE69022372D1 (de)	1995-10-19	Rastermechanismus für Ionenimplantierungsgerät.
NO910333L (no)	1991-10-21	Fremgangsmaate for plasmasprengning.
DE69021435D1 (de)	1995-09-14	Ionen-Implantationsgerät.
DE69206187D1 (de)	1996-01-04	Gerät für Plasmaverfahren.
DE69017563D1 (de)	1995-04-13	Ionenimplantationsvorrichtung.
DE69408017D1 (de)	1998-02-26	Ionen implantierer
DE69008228D1 (de)	1994-05-26	Plasmabearbeitungsvorrichtung.
DE69219618D1 (de)	1997-06-12	Coronaentladung-ionenquelle
DE69732364D1 (de)	2005-03-03	Ionenquelle
DE68921370D1 (de)	1995-04-06	Electronzyklotronresonanz-Ionenquelle.
DE69009359D1 (de)	1994-07-07	Leistungsquellevorrichtung.
DE69207212D1 (de)	1996-02-08	Hochfrequenz-ionenquelle
DE69030329D1 (de)	1997-04-30	Ionimplantationsgerät
DE69209196D1 (de)	1996-04-25	Ionen-Implantationsgerät
DE3887933D1 (de)	1994-03-31	Plasma-Bearbeitungsgerät.
DE69017075D1 (de)	1995-03-30	Ionen-Implantationsgerät.
DE69116657D1 (de)	1996-03-07	Ionenquelle für Massenspektrometer
DE69111681D1 (de)	1995-09-07	Elektronenoptische Messeinrichtung.
DE59107831D1 (de)	1996-06-27	Ionenquelle
DE3881579D1 (de)	1993-07-15	Ionenquelle.
DE69303409D1 (de)	1996-08-08	Ionenimplantergerät
DE59002341D1 (de)	1993-09-16	Praezisions-referenzspannungsquelle.
DE69110514D1 (de)	1995-07-27	Vorrichtung für Mikrowellen-Plasma-CVD.