DE69033736D1 - Verfahren zum Herstellen einer Halbleitervorrichtung - Google Patents

Verfahren zum Herstellen einer Halbleitervorrichtung

Info

Publication number
DE69033736D1
DE69033736D1 DE69033736T DE69033736T DE69033736D1 DE 69033736 D1 DE69033736 D1 DE 69033736D1 DE 69033736 T DE69033736 T DE 69033736T DE 69033736 T DE69033736 T DE 69033736T DE 69033736 D1 DE69033736 D1 DE 69033736D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033736T
Other languages
English (en)
Other versions
DE69033736T2 (de
Inventor
Hideaki Oka
Satoshi Takenaka
Masafumi Kunii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3414089A external-priority patent/JPH02213123A/ja
Priority claimed from JP1074229A external-priority patent/JP2773203B2/ja
Priority claimed from JP7423089A external-priority patent/JPH02252246A/ja
Priority claimed from JP14247089A external-priority patent/JPH036865A/ja
Priority claimed from JP25939389A external-priority patent/JPH03120872A/ja
Priority claimed from JP30286289A external-priority patent/JPH03161977A/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69033736D1 publication Critical patent/DE69033736D1/de
Publication of DE69033736T2 publication Critical patent/DE69033736T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02516—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
DE69033736T 1989-02-14 1990-02-12 Verfahren zum Herstellen einer Halbleitervorrichtung Expired - Fee Related DE69033736T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP3414089A JPH02213123A (ja) 1989-02-14 1989-02-14 半導体装置の製造方法
JP1074229A JP2773203B2 (ja) 1989-03-27 1989-03-27 半導体装置の製造方法
JP7423089A JPH02252246A (ja) 1989-03-27 1989-03-27 半導体装置の製造方法
JP14247089A JPH036865A (ja) 1989-06-05 1989-06-05 薄膜半導体装置及びその製造方法
JP25939389A JPH03120872A (ja) 1989-10-04 1989-10-04 半導体装置及びその製造方法
JP30286289A JPH03161977A (ja) 1989-11-21 1989-11-21 薄膜半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE69033736D1 true DE69033736D1 (de) 2001-06-28
DE69033736T2 DE69033736T2 (de) 2001-10-25

Family

ID=27549717

Family Applications (4)

Application Number Title Priority Date Filing Date
DE69030775T Expired - Fee Related DE69030775T2 (de) 1989-02-14 1990-02-12 Herstelllungsverfahren einer Halbleitervorrichtung
DE69030822T Expired - Fee Related DE69030822T2 (de) 1989-02-14 1990-02-12 Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE69033736T Expired - Fee Related DE69033736T2 (de) 1989-02-14 1990-02-12 Verfahren zum Herstellen einer Halbleitervorrichtung
DE69032773T Expired - Lifetime DE69032773T2 (de) 1989-02-14 1990-02-12 Verfahren zur Herstellung einer Halbleitervorrichtung

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69030775T Expired - Fee Related DE69030775T2 (de) 1989-02-14 1990-02-12 Herstelllungsverfahren einer Halbleitervorrichtung
DE69030822T Expired - Fee Related DE69030822T2 (de) 1989-02-14 1990-02-12 Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69032773T Expired - Lifetime DE69032773T2 (de) 1989-02-14 1990-02-12 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (5)

Country Link
US (3) US6235563B1 (de)
EP (4) EP0383230B1 (de)
DE (4) DE69030775T2 (de)
HK (1) HK1014293A1 (de)
SG (1) SG108807A1 (de)

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* Cited by examiner, † Cited by third party
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EP0608503B1 (de) 1997-05-28
EP0383230A3 (de) 1990-12-19
DE69030775T2 (de) 1997-11-13
SG108807A1 (en) 2005-02-28
EP0598410B1 (de) 2001-05-23
DE69032773T2 (de) 1999-05-27
EP0383230A2 (de) 1990-08-22
EP0608503A3 (de) 1995-05-24
DE69030822D1 (de) 1997-07-03
HK1014293A1 (en) 1999-09-24
EP0598409A1 (de) 1994-05-25
US20020132452A1 (en) 2002-09-19
DE69032773D1 (de) 1998-12-24
US6403497B1 (en) 2002-06-11
EP0598410A1 (de) 1994-05-25
DE69033736T2 (de) 2001-10-25
EP0383230B1 (de) 1997-05-28
EP0598409B1 (de) 1998-11-18
US6235563B1 (en) 2001-05-22
DE69030775D1 (de) 1997-07-03
EP0608503A2 (de) 1994-08-03
DE69030822T2 (de) 1997-11-27

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