DE69033664D1 - Asymmetrische Wandlerstruktur - Google Patents

Asymmetrische Wandlerstruktur

Info

Publication number
DE69033664D1
DE69033664D1 DE69033664T DE69033664T DE69033664D1 DE 69033664 D1 DE69033664 D1 DE 69033664D1 DE 69033664 T DE69033664 T DE 69033664T DE 69033664 T DE69033664 T DE 69033664T DE 69033664 D1 DE69033664 D1 DE 69033664D1
Authority
DE
Germany
Prior art keywords
converter structure
asymmetrical converter
asymmetrical
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69033664T
Other languages
English (en)
Other versions
DE69033664T2 (de
Inventor
Arthur R Zias
Barry Block
Kenneth W Mapes
Norman L Nystrom
Robert M Cadwell
Philip E Mauger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ashcroft Nagano Inc
Original Assignee
Dresser Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dresser Industries Inc filed Critical Dresser Industries Inc
Application granted granted Critical
Publication of DE69033664D1 publication Critical patent/DE69033664D1/de
Publication of DE69033664T2 publication Critical patent/DE69033664T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
DE69033664T 1989-01-30 1990-01-30 Asymmetrische Wandlerstruktur Expired - Lifetime DE69033664T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/304,344 US4996627A (en) 1989-01-30 1989-01-30 High sensitivity miniature pressure transducer

Publications (2)

Publication Number Publication Date
DE69033664D1 true DE69033664D1 (de) 2000-12-21
DE69033664T2 DE69033664T2 (de) 2001-05-10

Family

ID=23176124

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69015670T Expired - Lifetime DE69015670T2 (de) 1989-01-30 1990-01-30 Herstellungsmethode für Halbleitermembranen.
DE69032583T Expired - Lifetime DE69032583T2 (de) 1989-01-30 1990-01-30 Miniaturdruckwandler hoher Empfindlichkeit mit gespannter Membran
DE69033664T Expired - Lifetime DE69033664T2 (de) 1989-01-30 1990-01-30 Asymmetrische Wandlerstruktur

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69015670T Expired - Lifetime DE69015670T2 (de) 1989-01-30 1990-01-30 Herstellungsmethode für Halbleitermembranen.
DE69032583T Expired - Lifetime DE69032583T2 (de) 1989-01-30 1990-01-30 Miniaturdruckwandler hoher Empfindlichkeit mit gespannter Membran

Country Status (4)

Country Link
US (1) US4996627A (de)
EP (3) EP0389071B1 (de)
JP (1) JP2782546B2 (de)
DE (3) DE69015670T2 (de)

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JP3151816B2 (ja) * 1990-08-06 2001-04-03 日産自動車株式会社 エッチング方法
DE4206675C2 (de) * 1992-02-28 1995-04-27 Siemens Ag Verfahren zum Herstellen von Druckdifferenz-Sensoren
US5351163A (en) * 1992-12-30 1994-09-27 Westinghouse Electric Corporation High Q monolithic MIM capacitor
US5369544A (en) * 1993-04-05 1994-11-29 Ford Motor Company Silicon-on-insulator capacitive surface micromachined absolute pressure sensor
US5357806A (en) * 1993-05-03 1994-10-25 Halliburton Company Capacitive differential pressure sensor and method of measuring differential pressure at an oil or gas well
FI93579C (fi) * 1993-08-20 1995-04-25 Vaisala Oy Sähköstaattisen voiman avulla takaisinkytketty kapasitiivinen anturi ja menetelmä sen aktiivisen elementin muodon ohjaamiseksi
US5545594A (en) * 1993-10-26 1996-08-13 Yazaki Meter Co., Ltd. Semiconductor sensor anodic-bonding process, wherein bonding of corrugation is prevented
US5360521A (en) * 1993-11-12 1994-11-01 Honeywell Inc. Method for etching silicon
US5949118A (en) 1994-03-14 1999-09-07 Nippondenso Co., Ltd. Etching method for silicon substrates and semiconductor sensor
US5610431A (en) * 1995-05-12 1997-03-11 The Charles Stark Draper Laboratory, Inc. Covers for micromechanical sensors and other semiconductor devices
JPH11511556A (ja) * 1995-08-16 1999-10-05 スタント マニュファクチュアリング インコーポレイテッド 燃料キャップ漏れテスター
US5783495A (en) 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
US6083849A (en) * 1995-11-13 2000-07-04 Micron Technology, Inc. Methods of forming hemispherical grain polysilicon
US5757608A (en) * 1996-01-25 1998-05-26 Alliedsignal Inc. Compensated pressure transducer
US5917264A (en) * 1996-09-05 1999-06-29 Nagano Keiki Co Ltd Electrostatic capacitance type transducer and method for producing the same
US5952559A (en) * 1996-11-20 1999-09-14 Stant Manufacturing Inc. Fuel cap leakage tester
US6284670B1 (en) 1997-07-23 2001-09-04 Denso Corporation Method of etching silicon wafer and silicon wafer
US5988243A (en) * 1997-07-24 1999-11-23 Black & Decker Inc. Portable work bench
DE19803186C1 (de) * 1998-01-28 1999-06-17 Bosch Gmbh Robert Verfahren zur Herstellung strukturierter Wafer
US6151967A (en) * 1998-03-10 2000-11-28 Horizon Technology Group Wide dynamic range capacitive transducer
JPH11258265A (ja) * 1998-03-16 1999-09-24 Akebono Brake Ind Co Ltd 半導体加速度センサ及びその製造方法
US20020003274A1 (en) * 1998-08-27 2002-01-10 Janusz Bryzek Piezoresistive sensor with epi-pocket isolation
US6006607A (en) * 1998-08-31 1999-12-28 Maxim Integrated Products, Inc. Piezoresistive pressure sensor with sculpted diaphragm
US6346742B1 (en) 1998-11-12 2002-02-12 Maxim Integrated Products, Inc. Chip-scale packaged pressure sensor
US6351996B1 (en) 1998-11-12 2002-03-05 Maxim Integrated Products, Inc. Hermetic packaging for semiconductor pressure sensors
JP3506932B2 (ja) * 1998-12-09 2004-03-15 株式会社山武 半導体圧力センサ及びその製造方法
ATE252225T1 (de) * 1998-12-15 2003-11-15 Fraunhofer Ges Forschung Verfahren zum erzeugen eines mikro- elektromechanischen elements
US6229190B1 (en) 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
DE60006647T2 (de) * 1999-01-13 2004-09-30 Vermeer Mfg. Co., Pella Automatisiertes bohrplanungsverfahren und vorrichtung zum horizontalen richtungsbohren
US6544842B1 (en) 1999-05-01 2003-04-08 Micron Technology, Inc. Method of forming hemisphere grained silicon on a template on a semiconductor work object
TW474063B (en) * 1999-06-03 2002-01-21 Tdk Corp Piezoelectric device and manufacturing method thereof
US6628396B1 (en) * 1999-06-11 2003-09-30 Mamac Systems, Inc. Photo expansion gas detector
WO2004106880A1 (en) * 2003-06-02 2004-12-09 Danfoss A/S A pressure indicator
US6315062B1 (en) 1999-09-24 2001-11-13 Vermeer Manufacturing Company Horizontal directional drilling machine employing inertial navigation control system and method
US6308787B1 (en) 1999-09-24 2001-10-30 Vermeer Manufacturing Company Real-time control system and method for controlling an underground boring machine
US6401543B1 (en) 2000-04-10 2002-06-11 Dresser, Inc. Pressure measurement instrument with integrated valve system
DE10036284A1 (de) * 2000-07-26 2002-02-07 Bosch Gmbh Robert Herstellungsverfahren für ein Sensorbauelement, insbesondere Dünnschicht-Hochdrucksensor und Sensorbauelement
US6427539B1 (en) 2000-07-31 2002-08-06 Motorola, Inc. Strain gauge
US6232168B1 (en) 2000-08-25 2001-05-15 Micron Technology, Inc. Memory circuitry and method of forming memory circuitry
US6842964B1 (en) 2000-09-29 2005-01-18 Tucker Davis Technologies, Inc. Process of manufacturing of electrostatic speakers
EP1332106A2 (de) * 2000-11-07 2003-08-06 Gesim Gesellschaft für Silizium-Mikrosysteme mbH Verfahren zum herstellen von glas-silizium-glas sandwichstrukturen
AU2002251690A1 (en) * 2000-12-13 2002-08-12 Rochester Institute Of Technology A method and system for electrostatic bonding
US7280014B2 (en) * 2001-03-13 2007-10-09 Rochester Institute Of Technology Micro-electro-mechanical switch and a method of using and making thereof
US6423609B1 (en) * 2001-05-18 2002-07-23 Micron Technology, Inc. Methods of forming capacitors on a wafer, photolithographic methods of forming capacitors on a wafer, and semiconductor wafer
AU2002303933A1 (en) * 2001-05-31 2002-12-09 Rochester Institute Of Technology Fluidic valves, agitators, and pumps and methods thereof
EP1407464B1 (de) * 2001-07-17 2011-03-09 SMC Kabushiki Kaisha Elektromechanischer mikrosensor
US7211923B2 (en) 2001-10-26 2007-05-01 Nth Tech Corporation Rotational motion based, electrostatic power source and methods thereof
US7378775B2 (en) * 2001-10-26 2008-05-27 Nth Tech Corporation Motion based, electrostatic power source and methods thereof
US6772509B2 (en) 2002-01-28 2004-08-10 Motorola, Inc. Method of separating and handling a thin semiconductor die on a wafer
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
US7132348B2 (en) * 2002-03-25 2006-11-07 Micron Technology, Inc. Low k interconnect dielectric using surface transformation
WO2003083148A1 (en) * 2002-03-28 2003-10-09 Camco International (Uk) Limited Polycrystalline material element with improved wear resistance and methods of manufacture thereof
EP1359402B1 (de) * 2002-05-01 2014-10-01 Infineon Technologies AG Drucksensor
FI116859B (fi) * 2002-09-30 2006-03-15 Noveltech Solutions Ltd Fotoakustinen detektori
US6884341B2 (en) * 2002-10-02 2005-04-26 G6 Science Corp. Filter device to capture a desired amount of material
US6905594B2 (en) * 2002-10-11 2005-06-14 G6 Science Corp. Filter apparatus and methods to capture a desired amount of material from a sample suspension for monolayer deposition, analysis or other uses
US7008854B2 (en) * 2003-05-21 2006-03-07 Micron Technology, Inc. Silicon oxycarbide substrates for bonded silicon on insulator
US7662701B2 (en) * 2003-05-21 2010-02-16 Micron Technology, Inc. Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
US7273788B2 (en) * 2003-05-21 2007-09-25 Micron Technology, Inc. Ultra-thin semiconductors bonded on glass substrates
TWI224190B (en) * 2003-05-28 2004-11-21 Au Optronics Corp Semiconductor pressure sensor
US7439158B2 (en) * 2003-07-21 2008-10-21 Micron Technology, Inc. Strained semiconductor by full wafer bonding
US7217582B2 (en) 2003-08-29 2007-05-15 Rochester Institute Of Technology Method for non-damaging charge injection and a system thereof
US7287328B2 (en) * 2003-08-29 2007-10-30 Rochester Institute Of Technology Methods for distributed electrode injection
US8581308B2 (en) * 2004-02-19 2013-11-12 Rochester Institute Of Technology High temperature embedded charge devices and methods thereof
US7121146B1 (en) * 2004-10-29 2006-10-17 National Semiconductor Corporation MEMS pressure sensing device
US7328609B1 (en) 2004-10-29 2008-02-12 National Semiconductor Corporation Wireless pressure sensing Schrader valve
JP2006170893A (ja) * 2004-12-17 2006-06-29 Alps Electric Co Ltd 静電容量型圧力センサ
EP1883956A4 (de) * 2005-05-18 2011-03-23 Kolo Technologies Inc Durch-den-wafer-verbindung
JP4885211B2 (ja) 2005-05-18 2012-02-29 コロ テクノロジーズ インコーポレイテッド 微細電子機械変換器
CA2608164A1 (en) * 2005-06-17 2006-12-21 Kolo Technologies, Inc. Micro-electro-mechanical transducer having an insulation extension
US7802482B2 (en) * 2005-08-10 2010-09-28 Horiba Stec Co., Ltd. Diaphragm attaching structure of electrostatic capacity type pressure gauge
US20070074731A1 (en) * 2005-10-05 2007-04-05 Nth Tech Corporation Bio-implantable energy harvester systems and methods thereof
EP1811666A1 (de) * 2006-01-19 2007-07-25 3M Innovative Properties Company Näherungsschalter und Methode zur Produktion desselben
US7591184B2 (en) * 2007-03-16 2009-09-22 Rosemount Inc. Industrial pressure sensor having enhanced dielectric fill fluid
DE102008002332B4 (de) * 2008-06-10 2017-02-09 Robert Bosch Gmbh Verfahren zur Herstellung einer mikromechanischen Membranstruktur mit Zugang von der Substratrückseite
TWI427278B (zh) * 2009-03-30 2014-02-21 Azbil Corp Electrostatic capacitive pressure sensor
FR2947096A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de realisation d'une membrane plane
JP5446508B2 (ja) * 2009-06-26 2014-03-19 富士通株式会社 Ｍｅｍｓデバイスおよびその製造方法
WO2011008559A1 (en) 2009-06-29 2011-01-20 University Of Massachusetts Lowell Optical fiber pressure sensor with uniform diaphragm and method of fabricating same
US7994062B2 (en) * 2009-10-30 2011-08-09 Sachem, Inc. Selective silicon etch process
US8847380B2 (en) * 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US9631993B2 (en) * 2010-12-10 2017-04-25 Brooks Instrument, Llc Self-heated MEMs based capacitance diaphragm gauge
US9587976B2 (en) 2011-02-17 2017-03-07 University Of Massachusetts Photoacoustic probe
US9162876B2 (en) 2011-03-18 2015-10-20 Stmicroelectronics S.R.L. Process for manufacturing a membrane microelectromechanical device, and membrane microelectromechanical device
WO2014017169A1 (ja) * 2012-07-26 2014-01-30 株式会社村田製作所 押圧力センサ
US9452926B1 (en) 2012-07-30 2016-09-27 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration Dopant selective reactive ion etching of silicon carbide
WO2015077394A1 (en) * 2013-11-20 2015-05-28 Arizona Board Of Regents On Behalf Of Arizona State University Microfabrication technology for producing sensing cells for molecular electronic transducer based seismometer
DE102013113594A1 (de) * 2013-12-06 2015-06-11 Endress + Hauser Gmbh + Co. Kg Differenzdrucksensor
US9470594B2 (en) * 2014-01-17 2016-10-18 Sensata Technologies, Inc. Differential pressure sensor with dual output using a double-sided capacitive sensing element
US9829406B2 (en) * 2015-09-15 2017-11-28 Nxp Usa, Inc. Differential capacitive output pressure sensor and method
DE102016209798A1 (de) * 2016-06-03 2017-12-07 Robert Bosch Gmbh Mikroelektronische Sensorvorrichtung und Verfahren zum Herstellen einer mikroelektronischen Sensorvorrichtung
CA3098911A1 (en) * 2018-05-03 2019-11-07 Butterfly Network, Inc. Pressure port for ultrasonic transducer on cmos sensor
DE102018222738A1 (de) 2018-12-21 2020-06-25 Robert Bosch Gmbh Mikromechanische Drucksensorvorrichtung und ein entsprechendes Herstellungsverfahren
KR102163631B1 (ko) * 2019-06-03 2020-10-08 주식회사 대성이엔티 진공 척의 흡착 패드
JP7485209B2 (ja) * 2021-08-19 2024-05-16 富士電機株式会社 センサ装置およびセンサ装置の製造方法

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3096262A (en) * 1958-10-23 1963-07-02 Shockley William Method of making thin slices of semiconductive material
US3232114A (en) * 1962-06-15 1966-02-01 Acton Lab Inc Pressure transducer
GB1138401A (en) * 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
US3588632A (en) * 1968-11-12 1971-06-28 Josuke Nakata Structurally reinforced semiconductor device
US3557621A (en) * 1969-07-07 1971-01-26 C G S Scient Corp Inc Variable capacitance detecting devices
US3767483A (en) * 1970-05-11 1973-10-23 Hitachi Ltd Method of making semiconductor devices
US3713922A (en) * 1970-12-28 1973-01-30 Bell Telephone Labor Inc High resolution shadow masks and their preparation
US3757414A (en) * 1971-03-26 1973-09-11 Honeywell Inc Method for batch fabricating semiconductor devices
BE789090A (fr) * 1971-09-22 1973-01-15 Western Electric Co Procede et solution d'attaque de semi-conducteurs
US3888708A (en) * 1972-02-17 1975-06-10 Kensall D Wise Method for forming regions of predetermined thickness in silicon
US3800264A (en) * 1972-03-14 1974-03-26 Kulite Semiconductor Products High temperature transducers and housing including fabrication methods
US3758830A (en) * 1972-04-10 1973-09-11 Hewlett Packard Co Transducer formed in peripherally supported thin semiconductor web
US3764950A (en) * 1972-07-17 1973-10-09 Fairchild Camera Instr Co Methods for making semiconductor pressure transducers and the resulting structures
US3793885A (en) * 1972-09-05 1974-02-26 Rosemount Inc Diaphrgam construction for differential pressure transducer
US3748571A (en) * 1972-09-07 1973-07-24 Kulite Semiconductors Products Pressure sensitive transducers employing capacitive and resistive variations
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
US3951707A (en) * 1973-04-02 1976-04-20 Kulite Semiconductor Products, Inc. Method for fabricating glass-backed transducers and glass-backed structures
US3941629A (en) * 1974-04-11 1976-03-02 General Motors Corporation Diaphragm formation on silicon substrate
US3938175A (en) * 1974-04-24 1976-02-10 General Motors Corporation Polycrystalline silicon pressure transducer
US4121334A (en) * 1974-12-17 1978-10-24 P. R. Mallory & Co. Inc. Application of field-assisted bonding to the mass production of silicon type pressure transducers
US4040118A (en) * 1975-06-18 1977-08-02 Bunker Ramo Corporation Pressure sensitive transducer
US4079508A (en) * 1975-08-13 1978-03-21 The Board Of Trustees Of The Leland Stanford Junior University Miniature absolute pressure transducer assembly and method
US4023562A (en) * 1975-09-02 1977-05-17 Case Western Reserve University Miniature pressure transducer for medical use and assembly method
JPS5233575A (en) * 1975-09-09 1977-03-14 Fuji Electric Co Ltd Differential pressure measuring device
US4071838A (en) * 1976-02-09 1978-01-31 Diax Corporation Solid state force transducer and method of making same
JPS5351970A (en) * 1976-10-21 1978-05-11 Toshiba Corp Manufacture for semiconductor substrate
FR2372904A1 (fr) * 1976-11-19 1978-06-30 Ibm Composition de decapage du silicium polycristallin contenant de l'hydroxyde de tetramethylammonium et procede d'application
US4127840A (en) * 1977-02-22 1978-11-28 Conrac Corporation Solid state force transducer
JPS542783A (en) * 1977-06-09 1979-01-10 Fuji Electric Co Ltd Production of pressure or differential pressure measuring apparatus
US4256532A (en) * 1977-07-05 1981-03-17 International Business Machines Corporation Method for making a silicon mask
US4204185A (en) * 1977-10-13 1980-05-20 Kulite Semiconductor Products, Inc. Integral transducer assemblies employing thin homogeneous diaphragms
US4188258A (en) * 1978-05-18 1980-02-12 Gulton Industries, Inc. Process for fabricating strain gage transducer
JPS5516228A (en) * 1978-07-21 1980-02-04 Hitachi Ltd Capacity type sensor
US4184189A (en) * 1978-08-14 1980-01-15 Motorola, Inc. Capacitive pressure sensor and method of making it
DE2841312C2 (de) * 1978-09-22 1985-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung
JPS55112864U (de) * 1979-02-02 1980-08-08
IT1212404B (it) * 1979-02-22 1989-11-22 Rca Corp Metodo comportante un singolo attacco per la formazione di un mesa presentante una parete a piu'gradini.
US4212191A (en) * 1979-03-15 1980-07-15 The United States Of America As Represented By The Secretary Of The Army Differential pressure gauge
US4236137A (en) * 1979-03-19 1980-11-25 Kulite Semiconductor Products, Inc. Semiconductor transducers employing flexure frames
US4261086A (en) * 1979-09-04 1981-04-14 Ford Motor Company Method for manufacturing variable capacitance pressure transducers
JPS5687196A (en) * 1979-12-19 1981-07-15 Hitachi Ltd Differential pressure transmitter
JPS5764645U (de) * 1980-09-29 1982-04-17
US4332000A (en) * 1980-10-03 1982-05-25 International Business Machines Corporation Capacitive pressure transducer
US4443293A (en) * 1981-04-20 1984-04-17 Kulite Semiconductor Products, Inc. Method of fabricating transducer structure employing vertically walled diaphragms with quasi rectangular active areas
US4390925A (en) * 1981-08-26 1983-06-28 Leeds & Northrup Company Multiple-cavity variable capacitance pressure transducer
JPS5855732A (ja) * 1981-09-30 1983-04-02 Hitachi Ltd 静電容量型圧力センサ
US4415948A (en) * 1981-10-13 1983-11-15 United Technologies Corporation Electrostatic bonded, silicon capacitive pressure transducer
US4384899A (en) * 1981-11-09 1983-05-24 Motorola Inc. Bonding method adaptable for manufacturing capacitive pressure sensing elements
DE3211968A1 (de) * 1982-03-31 1983-10-13 Siemens AG, 1000 Berlin und 8000 München Drucksensor
US4424713A (en) * 1982-06-11 1984-01-10 General Signal Corporation Silicon diaphragm capacitive pressure transducer
US4445383A (en) * 1982-06-18 1984-05-01 General Signal Corporation Multiple range capacitive pressure transducer
EP0098318B1 (de) * 1982-07-03 1987-02-11 Ibm Deutschland Gmbh Verfahren zum Herstellen von Gräben mit im wesentlichen vertikalen Seitenwänden in Silicium durch reaktives Ionenätzen
EP0115908A3 (de) * 1983-01-10 1984-12-05 Automotive Engine Associates Aufnehmer
DE3310643C2 (de) * 1983-03-24 1986-04-10 Karlheinz Dr. 7801 Schallstadt Ziegler Drucksensor
JPS6051700A (ja) * 1983-08-31 1985-03-23 Toshiba Corp シリコン結晶体の接合方法
JPS6055655A (ja) * 1983-09-07 1985-03-30 Nissan Motor Co Ltd 梁構造体を有する半導体装置
JPS6062164A (ja) * 1983-09-16 1985-04-10 Mitsubishi Electric Corp 半導体圧力センサの製造方法
US4597003A (en) * 1983-12-01 1986-06-24 Harry E. Aine Chemical etching of a semiconductive wafer by undercutting an etch stopped layer
US4783237A (en) * 1983-12-01 1988-11-08 Harry E. Aine Solid state transducer and method of making same
US4556629A (en) * 1983-12-21 1985-12-03 Morton Thiokol, Inc. Developer composition for positive photoresists using solution with cyclic quaternary ammonium hydroxides
US4600934A (en) * 1984-01-06 1986-07-15 Harry E. Aine Method of undercut anisotropic etching of semiconductor material
US4584885A (en) * 1984-01-20 1986-04-29 Harry E. Aine Capacitive detector for transducers
US4525766A (en) * 1984-01-25 1985-06-25 Transensory Devices, Inc. Method and apparatus for forming hermetically sealed electrical feedthrough conductors
FI74350C (fi) * 1984-02-21 1988-01-11 Vaisala Oy Kapacitiv absoluttryckgivare.
US4530029A (en) * 1984-03-12 1985-07-16 United Technologies Corporation Capacitive pressure sensor with low parasitic capacitance
US4542435A (en) * 1984-03-29 1985-09-17 General Signal Corporation Pressure transducer and mounting
EP0161740B1 (de) * 1984-05-09 1991-06-12 Kabushiki Kaisha Toshiba Verfahren zur Herstellung eines Halbleitersubstrates
JPS6130038A (ja) * 1984-07-23 1986-02-12 Nec Corp エツチングの方法
US4581676A (en) * 1984-09-17 1986-04-08 General Signal Corporation Electrical contact coating for silicon pressure transducers
JPS6184537A (ja) * 1984-10-02 1986-04-30 Yokogawa Hokushin Electric Corp 容量式センサの製造方法
FI75426C (fi) * 1984-10-11 1988-06-09 Vaisala Oy Absoluttryckgivare.
US4578735A (en) * 1984-10-12 1986-03-25 Knecht Thomas A Pressure sensing cell using brittle diaphragm
US4617606A (en) * 1985-01-31 1986-10-14 Motorola, Inc. Capacitive pressure transducer
US4586109A (en) * 1985-04-01 1986-04-29 Bourns Instruments, Inc. Batch-process silicon capacitive pressure sensor
BR8505573A (pt) * 1985-10-31 1987-06-09 Icotron Sa Valvula de seguranca para capacitor a prova de explosao
JPS62172731A (ja) * 1986-01-24 1987-07-29 Nec Corp エツチング方法
US4730496A (en) * 1986-06-23 1988-03-15 Rosemount Inc. Capacitance pressure sensor
JPS63194369A (ja) * 1987-02-09 1988-08-11 Fuji Electric Co Ltd 半導体圧力センサの製造方法
GB8718637D0 (en) * 1987-08-06 1987-09-09 Spectrol Reliance Ltd Sealing electrical feedthrough
JPH01191422A (ja) * 1988-01-27 1989-08-01 Fujitsu Ltd Ｘ線マスクの製造方法
US4784721A (en) * 1988-02-22 1988-11-15 Honeywell Inc. Integrated thin-film diaphragm; backside etch
US4905575A (en) * 1988-10-20 1990-03-06 Rosemount Inc. Solid state differential pressure sensor with overpressure stop and free edge construction

Also Published As

Publication number Publication date
DE69032583T2 (de) 1999-01-07
EP0854358B1 (de) 2000-11-15
JPH02290524A (ja) 1990-11-30
EP0389071B1 (de) 1995-01-04
EP0389071A2 (de) 1990-09-26
DE69015670D1 (de) 1995-02-16
JP2782546B2 (ja) 1998-08-06
DE69033664T2 (de) 2001-05-10
US4996627A (en) 1991-02-26
EP0631122B1 (de) 1998-08-19
EP0631122A1 (de) 1994-12-28
DE69015670T2 (de) 1995-05-18
DE69032583D1 (de) 1998-09-24
EP0389071A3 (de) 1992-07-08
EP0854358A1 (de) 1998-07-22

Similar Documents

Publication Publication Date Title
DE69033664D1 (de) Asymmetrische Wandlerstruktur
DE69028863D1 (de) Formatumsetzer
DE3856165D1 (de) Photovoltaischer Wandler
DE3856221D1 (de) Photovoltaischer Wandler
DE69033613D1 (de) Fotoelektrischer Umwandler
NO169581C (no) Katalytisk konverter
BR8906392A (pt) Conexao
DE68926184D1 (de) DA-Wandler
DE68926633D1 (de) AD-Wandleranordnung
DE69032994D1 (de) Photoelektrischer Umwandler
DE69033657D1 (de) Photoelektrischer umwandler
AT385386B (de) Elektrostatischer wandler
FR2609852B1 (fr) Convertisseur binaire-bipolaire
DE3854807D1 (de) Strom-Spannungswandler
DE69033255D1 (de) Opto-optischer Wandler
DK406888A (da) Stige
BR9000539A (pt) Estrutura de anodo
DE59009460D1 (de) CMOS-ECL-Wandler.
ATA149789A (de) Schienenrad
KR900013660U (ko) Da 변환기
DE3991121T1 (de) Phakoemulsifikationswandler
FR2591826B1 (fr) Convertisseur
ATA194589A (de) Baukonstruktionsteil
ATA121289A (de) Signalwandler
KR870015403U (ko) 고정 인덕터

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: DRESSER,INC.(N.D.GES.D.STAATES DELAWARE), ADDISON,

8327 Change in the person/name/address of the patent owner

Owner name: DRESSER-NAGANO, INC.(N.D.GES.D.STAATES DELAWARE),