DE69033657D1 - Photoelektrischer umwandler - Google Patents

Photoelektrischer umwandler

Info

Publication number
DE69033657D1
DE69033657D1 DE69033657T DE69033657T DE69033657D1 DE 69033657 D1 DE69033657 D1 DE 69033657D1 DE 69033657 T DE69033657 T DE 69033657T DE 69033657 T DE69033657 T DE 69033657T DE 69033657 D1 DE69033657 D1 DE 69033657D1
Authority
DE
Germany
Prior art keywords
photoelectric converter
photoelectric
converter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033657T
Other languages
English (en)
Other versions
DE69033657T2 (de
Inventor
Shigetoshi Sugawa
Ihachiro Gofuku
Kazuaki Ohmi
Yoshiyuki Osada
Masato Yamanobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69033657D1 publication Critical patent/DE69033657D1/de
Publication of DE69033657T2 publication Critical patent/DE69033657T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69033657T 1989-08-04 1990-08-03 Photoelektrischer umwandler Expired - Fee Related DE69033657T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP20144989 1989-08-04
JP20145089 1989-08-04
JP4959590 1990-03-02
JP4959290 1990-03-02
JP4959490 1990-03-02
JP4959390 1990-03-02
JP4960290 1990-03-02
PCT/JP1990/000999 WO1991002381A1 (en) 1989-08-04 1990-08-03 Photo-electric converter

Publications (2)

Publication Number Publication Date
DE69033657D1 true DE69033657D1 (de) 2000-12-07
DE69033657T2 DE69033657T2 (de) 2001-05-03

Family

ID=27564727

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033657T Expired - Fee Related DE69033657T2 (de) 1989-08-04 1990-08-03 Photoelektrischer umwandler

Country Status (4)

Country Link
EP (1) EP0437633B1 (de)
JP (1) JP2838906B2 (de)
DE (1) DE69033657T2 (de)
WO (1) WO1991002381A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69222664T2 (de) * 1991-01-11 1998-03-12 Canon Kk Photoelektrische Umwandlungsvorrichtung und Verwendung derselben in einem Bildverarbeitungsgerät
US5401952A (en) * 1991-10-25 1995-03-28 Canon Kabushiki Kaisha Signal processor having avalanche photodiodes
DE69231398T2 (de) * 1991-11-22 2001-02-22 Canon Kk Photoelektrischer Wandler und Steuerverfahren dafür
JPH05335615A (ja) * 1992-05-27 1993-12-17 Canon Inc 光電変換装置
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
JP4503875B2 (ja) * 2000-04-19 2010-07-14 富士フイルム株式会社 撮像装置
EP1364413A1 (de) * 2001-03-01 2003-11-26 STMicroelectronics N.V. Optoelektronisches bauelement
US11901379B2 (en) 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
WO2020121854A1 (ja) 2018-12-12 2020-06-18 浜松ホトニクス株式会社 光検出装置
JP7454917B2 (ja) 2018-12-12 2024-03-25 浜松ホトニクス株式会社 光検出装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
JPS58170078A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体受光装置
JPS6049681A (ja) * 1983-08-29 1985-03-18 Fujitsu Ltd 半導体受光装置
JPH0732260B2 (ja) * 1984-07-17 1995-04-10 新技術事業団 非晶質半導体の超格子構造を有する受光素子
JPS61292973A (ja) * 1985-06-20 1986-12-23 Fujitsu Ltd 半導体受光素子
US4725870A (en) * 1985-11-18 1988-02-16 American Telephone And Telegraph Company, At&T Bell Laboratories Silicon germanium photodetector
JPS63233574A (ja) * 1987-03-23 1988-09-29 Hitachi Ltd 光電変換装置
EP0277016B1 (de) * 1987-01-29 1998-04-15 Canon Kabushiki Kaisha Photovoltaischer Wandler
JPH0715979B2 (ja) * 1987-08-27 1995-02-22 三菱電機株式会社 超格子撮像素子

Also Published As

Publication number Publication date
JP2838906B2 (ja) 1998-12-16
EP0437633B1 (de) 2000-11-02
JPH03278482A (ja) 1991-12-10
EP0437633A1 (de) 1991-07-24
EP0437633A4 (en) 1992-09-23
WO1991002381A1 (en) 1991-02-21
DE69033657T2 (de) 2001-05-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee