DE69032479T2 - Verbesserter Dünnfilmvaraktor - Google Patents
Verbesserter DünnfilmvaraktorInfo
- Publication number
- DE69032479T2 DE69032479T2 DE69032479T DE69032479T DE69032479T2 DE 69032479 T2 DE69032479 T2 DE 69032479T2 DE 69032479 T DE69032479 T DE 69032479T DE 69032479 T DE69032479 T DE 69032479T DE 69032479 T2 DE69032479 T2 DE 69032479T2
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- improved thin
- film varactor
- varactor
- improved
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/443,993 US5038184A (en) | 1989-11-30 | 1989-11-30 | Thin film varactors |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69032479D1 DE69032479D1 (de) | 1998-08-20 |
DE69032479T2 true DE69032479T2 (de) | 1999-01-28 |
Family
ID=23763034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69032479T Expired - Fee Related DE69032479T2 (de) | 1989-11-30 | 1990-11-30 | Verbesserter Dünnfilmvaraktor |
Country Status (4)
Country | Link |
---|---|
US (1) | US5038184A (de) |
EP (1) | EP0430697B1 (de) |
JP (1) | JPH0775262B2 (de) |
DE (1) | DE69032479T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5192871A (en) * | 1991-10-15 | 1993-03-09 | Motorola, Inc. | Voltage variable capacitor having amorphous dielectric film |
US5338951A (en) * | 1991-11-06 | 1994-08-16 | Ramtron International Corporation | Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices |
US5973382A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corporation | Capacitor on ultrathin semiconductor on insulator |
US5405790A (en) * | 1993-11-23 | 1995-04-11 | Motorola, Inc. | Method of forming a semiconductor structure having MOS, bipolar, and varactor devices |
US5650346A (en) * | 1994-08-29 | 1997-07-22 | United Microelectronics Corporation | Method of forming MOSFET devices with buried bitline capacitors |
US5554545A (en) * | 1994-09-01 | 1996-09-10 | United Microelectronics Corporation | Method of forming neuron mosfet with different interpolysilicon oxide thickness |
US5644349A (en) * | 1994-09-07 | 1997-07-01 | Xerox Corporation | Mechanical capacitor |
US5589864A (en) * | 1994-09-30 | 1996-12-31 | Xerox Corporation | Integrated varactor switches for acoustic ink printing |
US5895945A (en) * | 1995-11-14 | 1999-04-20 | United Microelectronics Corporation | Single polysilicon neuron MOSFET |
US6364454B1 (en) | 1998-09-30 | 2002-04-02 | Xerox Corporation | Acoustic ink printing method and system for improving uniformity by manipulating nonlinear characteristics in the system |
DE10195711T1 (de) * | 2000-12-21 | 2003-12-04 | Valeriy Moiseevich Ioffe | Halbleitergerät |
US6667539B2 (en) | 2001-11-08 | 2003-12-23 | International Business Machines Corporation | Method to increase the tuning voltage range of MOS varactors |
US7169679B2 (en) * | 2002-01-07 | 2007-01-30 | Honeywell International Inc. | Varactor with improved tuning range |
DE10206375A1 (de) * | 2002-02-15 | 2003-06-26 | Infineon Technologies Ag | Integrierte, abstimmbare Kapazität |
US20040263272A1 (en) * | 2003-06-30 | 2004-12-30 | Ashoke Ravi | Enhanced single-supply low-voltage circuits and methods thereof |
DE10338277A1 (de) * | 2003-08-20 | 2005-03-17 | Siemens Ag | Organischer Kondensator mit spannungsgesteuerter Kapazität |
KR100593444B1 (ko) * | 2004-02-12 | 2006-06-28 | 삼성전자주식회사 | 모오스 바렉터를 갖는 반도체소자 및 그것을 제조하는 방법 |
US7098751B1 (en) | 2004-08-27 | 2006-08-29 | National Semiconductor Corporation | Tunable capacitance circuit for voltage control oscillator |
US7033870B1 (en) * | 2004-11-29 | 2006-04-25 | International Business Machines Corporation | Semiconductor transistors with reduced gate-source/drain capacitances |
US7728377B2 (en) * | 2005-09-23 | 2010-06-01 | Agile Rf, Inc. | Varactor design using area to perimeter ratio for improved tuning range |
EP2232572A4 (de) * | 2007-12-07 | 2012-10-17 | Alion Inc | Fokussiertes akustisches bedrucken von strukturierten photovoltaikmaterialien |
US20100184244A1 (en) * | 2009-01-20 | 2010-07-22 | SunPrint, Inc. | Systems and methods for depositing patterned materials for solar panel production |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3627662A (en) * | 1970-02-24 | 1971-12-14 | Gte Laboratories Inc | Thin film transistor and method of fabrication thereof |
US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
DE2503864C3 (de) * | 1975-01-30 | 1981-09-24 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement |
US4876582A (en) * | 1983-05-02 | 1989-10-24 | Ncr Corporation | Crystallized silicon-on-insulator nonvolatile memory device |
JPS6089975A (ja) * | 1983-10-24 | 1985-05-20 | Toshiba Corp | 半導体装置 |
US4598305A (en) * | 1984-06-18 | 1986-07-01 | Xerox Corporation | Depletion mode thin film semiconductor photodetectors |
US4886977A (en) * | 1986-11-11 | 1989-12-12 | Canon Kabushiki Kaisha | Photoelectric converter provided with voltage dividing means |
US4782350A (en) * | 1987-10-28 | 1988-11-01 | Xerox Corporation | Amorphous silicon varactors as rf amplitude modulators and their application to acoustic ink printers |
CA1310078C (en) * | 1987-11-27 | 1992-11-10 | American Telephone And Telegraph Company | Voltage controlled variable capacitor |
US4907041A (en) * | 1988-09-16 | 1990-03-06 | Xerox Corporation | Intra-gate offset high voltage thin film transistor with misalignment immunity |
-
1989
- 1989-11-30 US US07/443,993 patent/US5038184A/en not_active Expired - Lifetime
-
1990
- 1990-11-22 JP JP2320564A patent/JPH0775262B2/ja not_active Expired - Fee Related
- 1990-11-30 DE DE69032479T patent/DE69032479T2/de not_active Expired - Fee Related
- 1990-11-30 EP EP90313018A patent/EP0430697B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0430697B1 (de) | 1998-07-15 |
EP0430697A3 (en) | 1991-08-07 |
DE69032479D1 (de) | 1998-08-20 |
EP0430697A2 (de) | 1991-06-05 |
JPH0775262B2 (ja) | 1995-08-09 |
US5038184A (en) | 1991-08-06 |
JPH03177076A (ja) | 1991-08-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |