DE69021773D1 - Lithographische Röntgenmaske und Verfahren zum Herstellen einer solchen Maske. - Google Patents

Lithographische Röntgenmaske und Verfahren zum Herstellen einer solchen Maske.

Info

Publication number
DE69021773D1
DE69021773D1 DE69021773T DE69021773T DE69021773D1 DE 69021773 D1 DE69021773 D1 DE 69021773D1 DE 69021773 T DE69021773 T DE 69021773T DE 69021773 T DE69021773 T DE 69021773T DE 69021773 D1 DE69021773 D1 DE 69021773D1
Authority
DE
Germany
Prior art keywords
mask
producing
ray lithographic
ray
lithographic mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69021773T
Other languages
English (en)
Other versions
DE69021773T2 (de
Inventor
George K Celler
Lee Edward Trimble
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69021773D1 publication Critical patent/DE69021773D1/de
Application granted granted Critical
Publication of DE69021773T2 publication Critical patent/DE69021773T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69021773T 1989-05-26 1990-05-18 Lithographische Röntgenmaske und Verfahren zum Herstellen einer solchen Maske. Expired - Fee Related DE69021773T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/358,312 US5051326A (en) 1989-05-26 1989-05-26 X-Ray lithography mask and devices made therewith

Publications (2)

Publication Number Publication Date
DE69021773D1 true DE69021773D1 (de) 1995-09-28
DE69021773T2 DE69021773T2 (de) 1996-05-02

Family

ID=23409169

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69021773T Expired - Fee Related DE69021773T2 (de) 1989-05-26 1990-05-18 Lithographische Röntgenmaske und Verfahren zum Herstellen einer solchen Maske.

Country Status (5)

Country Link
US (1) US5051326A (de)
EP (1) EP0399735B1 (de)
JP (1) JPH0319313A (de)
CA (1) CA2013245C (de)
DE (1) DE69021773T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
US5234781A (en) * 1988-11-07 1993-08-10 Fujitsu Limited Mask for lithographic patterning and a method of manufacturing the same
JP2593466Y2 (ja) * 1992-03-25 1999-04-12 ワイケイケイ株式会社 レール状ファスナー
JPH06105681B2 (ja) * 1992-04-07 1994-12-21 東京工業大学長 Ｘ線露光マスクの作製法
US6714625B1 (en) * 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
JP3334911B2 (ja) * 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
US5362575A (en) * 1992-12-31 1994-11-08 At&T Bell Laboratories Lithographic mask, comprising a membrane having improved strength
US5482802A (en) * 1993-11-24 1996-01-09 At&T Corp. Material removal with focused particle beams
US5670279A (en) * 1994-03-24 1997-09-23 Starfire Electronic Development & Marketing, Ltd. Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6551857B2 (en) * 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US6162564A (en) * 1997-11-25 2000-12-19 Kabushiki Kaisha Toshiba Mask blank and method of producing mask
JP3770542B2 (ja) 1999-07-22 2006-04-26 コーニング インコーポレイテッド 遠紫外軟ｘ線投影リソグラフィー法およびマスク装置
US6776006B2 (en) 2000-10-13 2004-08-17 Corning Incorporated Method to avoid striae in EUV lithography mirrors
US6660547B2 (en) * 2001-07-26 2003-12-09 Osram Opto Semiconductors Gmbh Stabilization for thin substrates
WO2004015764A2 (en) 2002-08-08 2004-02-19 Leedy Glenn J Vertical system integration
KR20240038172A (ko) 2014-07-04 2024-03-22 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 내에서 사용하는 멤브레인 및 이러한 멤브레인을 포함한 리소그래피 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3721584A (en) * 1970-04-13 1973-03-20 A Diem Silicon coated substrates and objects fabricated therefrom
JPS57211732A (en) * 1981-06-24 1982-12-25 Toshiba Corp X ray exposing mask and manufacture thereof
JPS58141528A (ja) * 1982-02-18 1983-08-22 Agency Of Ind Science & Technol Ｘ線露光用マスクおよびその製法
JPS595628A (ja) * 1982-07-02 1984-01-12 Seiko Epson Corp メンブラン・マスク
JPS5918635A (ja) * 1982-07-23 1984-01-31 Hitachi Ltd Ｘ線リソグラフイ用マスク
JPS5935428A (ja) * 1982-08-24 1984-02-27 Canon Inc Ｘ線用マスク
JPS59213131A (ja) * 1983-05-19 1984-12-03 Toshiba Corp Ｘ線露光用マスクの製造方法
EP0244246A3 (de) * 1986-05-02 1990-03-21 Hampshire Instruments, Inc Verfahren zur Herstellung von massstabilen Röntgenstrahlmasken
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process

Also Published As

Publication number Publication date
EP0399735B1 (de) 1995-08-23
EP0399735A3 (de) 1991-07-03
CA2013245C (en) 1994-04-19
DE69021773T2 (de) 1996-05-02
US5051326A (en) 1991-09-24
CA2013245A1 (en) 1990-11-26
EP0399735A2 (de) 1990-11-28
JPH0319313A (ja) 1991-01-28

Similar Documents

Publication Publication Date Title
DE69021773D1 (de) Lithographische Röntgenmaske und Verfahren zum Herstellen einer solchen Maske.
DE69004842T2 (de) Strahlungemittierende Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung.
DE3582572D1 (de) Verfahren und vorrichtung zum herstellen eines schichtkoerpers.
DE3879471T2 (de) Verfahren zur herstellung eines photoresistmusters und apparat dafuer.
DE68923247T2 (de) Verfahren zum Erzeugen eines Fotolackmusters.
DE69107009T2 (de) Verfahren und Vorrichtung zum Herstellen einer wiederverschliessbaren Verpackung.
DE3768912D1 (de) Verfahren zum herstellen eines verbundwerkstoffgegenstandes.
DE69016763T2 (de) Verfahren und Vorrichtung zum Herstellen einer gürtelartigen Bahn.
DE58908303D1 (de) Faservlieskomposit und Verfahren zum Herstellen eines solchen Vlieses.
DE3784605T2 (de) Verfahren zum herstellen einer halbleitervorrichtung und halbleitervorrichtung.
DE68906034D1 (de) Verfahren zum herstellen einer halbleiteranordnung.
DE69226887D1 (de) Halbleiteranordnung und Verfahren zum Herstellen einer derartigen Halbleiteranordnung
DE68918149T2 (de) Vorrichtung und Verfahren zum Herstellen einer Vorrichtung.
DE3679981D1 (de) Transmissionsprojektionsschirm und verfahren zum herstellen eines schirmes.
DE68902168T2 (de) Vorrichtung und verfahren zum herstellen einer rotationssiebdruckschablone.
DE68922085D1 (de) Halbleiteranordung und Verfahren zum Herstellen einer Halbleiteranordung.
DE69220116T2 (de) Röntgenlithographische Maske, Belichtungsvorrichtung und das Verfahren hierzu
DE3679980D1 (de) Transmissionsprojektionsschirm und verfahren zum herstellen eines schirmes.
DE68911973D1 (de) Anordnung und Verfahren zum Herstellen einer Anordnung.
DE69200697T2 (de) Lithographischer Träger und Verfahren zur Herstellung einer lithographischen Druckform.
DE3876285D1 (de) Verfahren zum herstellen einer faserverstaerkten prepregfolie und vorrichtung dafuer.
DE68915804D1 (de) Verfahren und Vorrichtung zum Herstellen einer gebogenen Glasscheibe.
DE69021284D1 (de) Verfahren zur Herstellung und Verwendung einer Hochauflösungs-Lithographie-Maske.
ATA122690A (de) Verfahren zum herstellen einer nockenwelle
DE59104091D1 (de) Verfahren zum herstellen einer schaltung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee