DE69005938D1 - Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht. - Google Patents
Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht.Info
- Publication number
- DE69005938D1 DE69005938D1 DE90114140T DE69005938T DE69005938D1 DE 69005938 D1 DE69005938 D1 DE 69005938D1 DE 90114140 T DE90114140 T DE 90114140T DE 69005938 T DE69005938 T DE 69005938T DE 69005938 D1 DE69005938 D1 DE 69005938D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- carbon layer
- thin diamond
- diamond
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title 1
- 229910052799 carbon Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/338—Changing chemical properties of treated surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/339—Synthesising components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
- Y10S427/106—Utilizing plasma, e.g. corona, glow discharge, cold plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1198986A JPH0364467A (ja) | 1989-07-31 | 1989-07-31 | 炭素膜の合成方法及び合成装置 |
JP1300503A JPH03162580A (ja) | 1989-11-17 | 1989-11-17 | 薄膜合成装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69005938D1 true DE69005938D1 (de) | 1994-02-24 |
DE69005938T2 DE69005938T2 (de) | 1994-05-19 |
Family
ID=26511280
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69005938T Expired - Fee Related DE69005938T2 (de) | 1989-07-31 | 1990-07-24 | Vorrichtung zur Herstellung von einer dünnen diamantartigen Kohlenstoffschicht. |
Country Status (3)
Country | Link |
---|---|
US (2) | US5203924A (de) |
EP (1) | EP0411435B1 (de) |
DE (1) | DE69005938T2 (de) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69312989T2 (de) * | 1992-03-13 | 1997-12-18 | Matsushita Electric Ind Co Ltd | Plasma-CVD-Anlage und entsprechendes Verfahren |
GB2269105B (en) * | 1992-07-28 | 1996-05-08 | Dr Joseph Franks | Instrument tip for dental filling instrument |
FR2695944B1 (fr) * | 1992-09-24 | 1994-11-18 | Onera (Off Nat Aerospatiale) | Appareil de dépôt chimique en phase vapeur activé par un plasma micro-ondes. |
US6001432A (en) * | 1992-11-19 | 1999-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for forming films on a substrate |
US7264850B1 (en) | 1992-12-28 | 2007-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for treating a substrate with a plasma |
US6001431A (en) * | 1992-12-28 | 1999-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating a magnetic recording medium |
US5470661A (en) * | 1993-01-07 | 1995-11-28 | International Business Machines Corporation | Diamond-like carbon films from a hydrocarbon helium plasma |
US5837081A (en) * | 1993-04-07 | 1998-11-17 | Applied Sciences, Inc. | Method for making a carbon-carbon composite |
US5389400A (en) * | 1993-04-07 | 1995-02-14 | Applied Sciences, Inc. | Method for making a diamond/carbon/carbon composite useful as an integral dielectric heat sink |
US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
US5560779A (en) * | 1993-07-12 | 1996-10-01 | Olin Corporation | Apparatus for synthesizing diamond films utilizing an arc plasma |
US6183816B1 (en) | 1993-07-20 | 2001-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the coating |
US5472509A (en) * | 1993-11-30 | 1995-12-05 | Neomecs Incorporated | Gas plasma apparatus with movable film liners |
US5508368A (en) * | 1994-03-03 | 1996-04-16 | Diamonex, Incorporated | Ion beam process for deposition of highly abrasion-resistant coatings |
GB9405029D0 (en) * | 1994-03-15 | 1994-04-27 | Franks Joseph Dr | Improved catheters and other tubular inserts |
JP3175894B2 (ja) * | 1994-03-25 | 2001-06-11 | 株式会社半導体エネルギー研究所 | プラズマ処理装置及びプラズマ処理方法 |
US5679167A (en) * | 1994-08-18 | 1997-10-21 | Sulzer Metco Ag | Plasma gun apparatus for forming dense, uniform coatings on large substrates |
US5888594A (en) * | 1996-11-05 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Process for depositing a carbon-rich coating on a moving substrate |
US5948166A (en) * | 1996-11-05 | 1999-09-07 | 3M Innovative Properties Company | Process and apparatus for depositing a carbon-rich coating on a moving substrate |
US6077572A (en) * | 1997-06-18 | 2000-06-20 | Northeastern University | Method of coating edges with diamond-like carbon |
US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
JP2002194547A (ja) * | 2000-06-08 | 2002-07-10 | Applied Materials Inc | アモルファスカーボン層の堆積方法 |
TW536662B (en) | 2000-08-31 | 2003-06-11 | Fuji Photo Film Co Ltd | Negative resist composition |
KR20020037995A (ko) * | 2000-11-16 | 2002-05-23 | 구자홍 | 플라즈마 중합 처리장치의 전극 구조 |
US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
US6541397B1 (en) | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
US7125587B2 (en) * | 2002-05-20 | 2006-10-24 | Varian Semiconductor Equipment Associates Inc. | Ion beam for enhancing optical properties of materials |
JP4052191B2 (ja) * | 2003-06-24 | 2008-02-27 | 株式会社島津製作所 | 複合成膜装置およびこれを用いた磁気ヘッドの保護膜形成方法 |
US7064078B2 (en) * | 2004-01-30 | 2006-06-20 | Applied Materials | Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme |
WO2005087974A2 (en) * | 2004-03-05 | 2005-09-22 | Applied Materials, Inc. | Cvd processes for the deposition of amorphous carbon films |
US7638440B2 (en) * | 2004-03-12 | 2009-12-29 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for etch hardmask application |
US7079740B2 (en) * | 2004-03-12 | 2006-07-18 | Applied Materials, Inc. | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides |
US20050199585A1 (en) * | 2004-03-12 | 2005-09-15 | Applied Materials, Inc. | Method of depositing an amorphous carbon film for metal etch hardmask application |
US20070286965A1 (en) * | 2006-06-08 | 2007-12-13 | Martin Jay Seamons | Methods for the reduction and elimination of particulate contamination with cvd of amorphous carbon |
US7094442B2 (en) * | 2004-07-13 | 2006-08-22 | Applied Materials, Inc. | Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon |
DE102005049266B4 (de) * | 2005-10-14 | 2007-12-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung und Verfahren zur Plasmabehandlung von Objekten |
US20070286954A1 (en) * | 2006-06-13 | 2007-12-13 | Applied Materials, Inc. | Methods for low temperature deposition of an amorphous carbon layer |
DE102007063380A1 (de) * | 2007-12-20 | 2009-06-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beschichtungsvorrichtung zur Beschichtung eines Substrates bei Atmosphärenbedingungen |
JP5574165B2 (ja) * | 2010-05-31 | 2014-08-20 | 株式会社ジェイテクト | 被覆部材の製造方法 |
JP2012038965A (ja) * | 2010-08-09 | 2012-02-23 | Lapis Semiconductor Co Ltd | 半導体装置及びその製造方法 |
JP5649510B2 (ja) * | 2010-08-19 | 2015-01-07 | キヤノンアネルバ株式会社 | プラズマ処理装置,成膜方法,dlc皮膜を有する金属板の製造方法,セパレータの製造方法 |
DE102013107659B4 (de) * | 2013-07-18 | 2015-03-12 | W & L Coating Systems Gmbh | Plasmachemische Beschichtungsvorrichtung |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4486286A (en) * | 1982-09-28 | 1984-12-04 | Nerken Research Corp. | Method of depositing a carbon film on a substrate and products obtained thereby |
US4645977A (en) * | 1984-08-31 | 1987-02-24 | Matsushita Electric Industrial Co., Ltd. | Plasma CVD apparatus and method for forming a diamond like carbon film |
US4663183A (en) * | 1984-09-10 | 1987-05-05 | Energy Conversion Devices, Inc. | Glow discharge method of applying a carbon coating onto a substrate |
EP0183254B1 (de) * | 1984-11-29 | 1994-07-13 | Matsushita Electric Industrial Co., Ltd. | Verfahren zur plasma-chemischen Abscheidung aus der Dampfphase und Verfahren zur Herstellung eines Films von diamantähnlichem Kohlenstoff |
US4673589A (en) * | 1986-02-18 | 1987-06-16 | Amoco Corporation | Photoconducting amorphous carbon |
JPS62195744A (ja) * | 1986-02-21 | 1987-08-28 | Fuji Electric Co Ltd | 光磁気記録媒体 |
KR900005118B1 (ko) * | 1986-07-14 | 1990-07-19 | 미쓰비시전기주식회사 | 박막 형성장치 |
US4913929A (en) * | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
JP2610469B2 (ja) * | 1988-02-26 | 1997-05-14 | 株式会社 半導体エネルギー研究所 | 炭素または炭素を主成分とする被膜を形成する方法 |
JPH01239919A (ja) * | 1988-03-22 | 1989-09-25 | Semiconductor Energy Lab Co Ltd | プラズマ処理方法およびプラズマ処理装置 |
US4883686A (en) * | 1988-05-26 | 1989-11-28 | Energy Conversion Devices, Inc. | Method for the high rate plasma deposition of high quality material |
US5023109A (en) * | 1989-09-06 | 1991-06-11 | General Atomics | Deposition of synthetic diamonds |
US5091208A (en) * | 1990-03-05 | 1992-02-25 | Wayne State University | Novel susceptor for use in chemical vapor deposition apparatus and its method of use |
US5169452A (en) * | 1990-05-14 | 1992-12-08 | Tdk Corporation | Apparatus for the synthesis of diamond-like thin films |
-
1990
- 1990-07-24 DE DE69005938T patent/DE69005938T2/de not_active Expired - Fee Related
- 1990-07-24 EP EP90114140A patent/EP0411435B1/de not_active Expired - Lifetime
- 1990-07-26 US US07/558,241 patent/US5203924A/en not_active Expired - Fee Related
-
1993
- 1993-12-29 US US08/174,169 patent/US5674573A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0411435B1 (de) | 1994-01-12 |
US5203924A (en) | 1993-04-20 |
DE69005938T2 (de) | 1994-05-19 |
US5674573A (en) | 1997-10-07 |
EP0411435A1 (de) | 1991-02-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |