DE68928860D1 - Belichtungsverfahren - Google Patents

Belichtungsverfahren

Info

Publication number
DE68928860D1
DE68928860D1 DE68928860T DE68928860T DE68928860D1 DE 68928860 D1 DE68928860 D1 DE 68928860D1 DE 68928860 T DE68928860 T DE 68928860T DE 68928860 T DE68928860 T DE 68928860T DE 68928860 D1 DE68928860 D1 DE 68928860D1
Authority
DE
Germany
Prior art keywords
exposure process
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68928860T
Other languages
English (en)
Other versions
DE68928860T2 (de
Inventor
Hirohisa Ohta
Kunitaka Ozawa
Eigo Kawakami
Shunichi Uzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE68928860D1 publication Critical patent/DE68928860D1/de
Application granted granted Critical
Publication of DE68928860T2 publication Critical patent/DE68928860T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE68928860T 1988-09-30 1989-09-28 Belichtungsverfahren Expired - Fee Related DE68928860T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63246259A JP2799575B2 (ja) 1988-09-30 1988-09-30 露光方法

Publications (2)

Publication Number Publication Date
DE68928860D1 true DE68928860D1 (de) 1999-01-07
DE68928860T2 DE68928860T2 (de) 1999-05-12

Family

ID=17145862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68928860T Expired - Fee Related DE68928860T2 (de) 1988-09-30 1989-09-28 Belichtungsverfahren

Country Status (4)

Country Link
US (1) US5443932A (de)
EP (1) EP0361934B1 (de)
JP (1) JP2799575B2 (de)
DE (1) DE68928860T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6122036A (en) * 1993-10-21 2000-09-19 Nikon Corporation Projection exposure apparatus and method
CN1120683A (zh) * 1994-03-15 1996-04-17 松下电器产业株式会社 曝光方法及其装置
JP2994968B2 (ja) * 1994-10-06 1999-12-27 ウシオ電機株式会社 マスクとワークの位置合わせ方法および装置
US5552891A (en) * 1994-10-31 1996-09-03 International Business Machines Corporation Automated mask alignment for UV projection expose system
JPH08191043A (ja) * 1995-01-11 1996-07-23 Nikon Corp アライメント方法及び該方法で使用される露光装置
JP3634068B2 (ja) 1995-07-13 2005-03-30 株式会社ニコン 露光方法及び装置
US6618120B2 (en) * 2001-10-11 2003-09-09 Nikon Corporation Devices and methods for compensating for tilting of a leveling table in a microlithography apparatus
US7277188B2 (en) * 2003-04-29 2007-10-02 Cymer, Inc. Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
DE10355681A1 (de) * 2003-11-28 2005-07-07 Süss Microtec Lithography Gmbh Direkte Justierung in Maskalignern
US7417710B2 (en) * 2005-09-26 2008-08-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5537063B2 (ja) * 2009-04-20 2014-07-02 株式会社日立ハイテクノロジーズ プロキシミティ露光装置、プロキシミティ露光装置のギャップ制御方法、及び表示用パネル基板の製造方法
EP2752870A1 (de) * 2013-01-04 2014-07-09 Süss Microtec Lithography GmbH Aufnahmevorrichtung, insbesondere zur Verwendung in einer Vorrichtung zum Ausrichten von Masken

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5717132A (en) * 1980-07-07 1982-01-28 Fujitsu Ltd Formation of microscopic pattern using lithography and device thereof
JPS58128735A (ja) * 1982-01-27 1983-08-01 Hitachi Ltd Ｘ線アライナ
JPS6184018A (ja) * 1984-10-01 1986-04-28 Hitachi Ltd Ｘ線露光装置
US4623608A (en) * 1985-03-14 1986-11-18 Rca Corporation Method and apparatus for coating a selected area of the surface of an object
JPH0622192B2 (ja) * 1985-04-25 1994-03-23 キヤノン株式会社 表示パネル製造方法
US4676630A (en) * 1985-04-25 1987-06-30 Canon Kabushiki Kaisha Exposure apparatus
US4748477A (en) * 1985-04-30 1988-05-31 Canon Kabushiki Kaisha Exposure apparatus
US4669868A (en) * 1986-04-18 1987-06-02 Ovonic Imaging Systems, Inc. Step and repeat exposure apparatus and method
JPS62254426A (ja) * 1986-04-28 1987-11-06 Hitachi Ltd 平行出し装置
DE3623891A1 (de) * 1986-07-15 1988-01-28 Siemens Ag Anordnung zur genauen gegenseitigen ausrichtung einer maske und einer halbleiterscheibe in einem lithographiegeraet und verfahren zu ihrem betrieb
EP0263349A1 (de) * 1986-10-06 1988-04-13 Siemens Aktiengesellschaft Stosswellenquelle
US4891526A (en) * 1986-12-29 1990-01-02 Hughes Aircraft Company X-Y-θ-Z positioning stage
US4870668A (en) * 1987-12-30 1989-09-26 Hampshire Instruments, Inc. Gap sensing/adjustment apparatus and method for a lithography machine

Also Published As

Publication number Publication date
JPH0294515A (ja) 1990-04-05
EP0361934A3 (de) 1991-07-03
JP2799575B2 (ja) 1998-09-17
EP0361934B1 (de) 1998-11-25
US5443932A (en) 1995-08-22
DE68928860T2 (de) 1999-05-12
EP0361934A2 (de) 1990-04-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee