JPS5717132A - Formation of microscopic pattern using lithography and device thereof - Google Patents
Formation of microscopic pattern using lithography and device thereofInfo
- Publication number
- JPS5717132A JPS5717132A JP9253080A JP9253080A JPS5717132A JP S5717132 A JPS5717132 A JP S5717132A JP 9253080 A JP9253080 A JP 9253080A JP 9253080 A JP9253080 A JP 9253080A JP S5717132 A JPS5717132 A JP S5717132A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- shaft
- mask
- movements
- flat surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Abstract
PURPOSE:To form the microscopic pattern accurately on a distorted substrate by a method wherein radial beams of light are irradiated at the three or four reference points set on a mask and a substrate and simultaneous equations consisting of a dependent variable representing the independent variable and the correction working of a positional errors is solved. CONSTITUTION:The three or four reference points are established on the mask and the substrate, radial beams of light are irradiated, the element of performance to be used for correction of positional errors are consisted of eight kinds, namely, movements in X-Y shaft direction, revolution within XY flat surface, Z shaft movements (mask to substrate direction), rotations wherein XZ flat surface, revolution within YZ flat surface and movements of source of irradiating light in X shaft-Y shaft direction. Degree of freedom is thereby increased and position matching is performed by solving the simultaneous equations consisting of six or eight dependent variables representing the six or eight independent variables obtained from the positional errors in the X-Y shaft direction and six or eight dependent variables representing six or eight compensating actions. Through these procedures, a desired pattern of high accuracy can be formed on a distorted substrate whereon the pattern is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9253080A JPS5717132A (en) | 1980-07-07 | 1980-07-07 | Formation of microscopic pattern using lithography and device thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9253080A JPS5717132A (en) | 1980-07-07 | 1980-07-07 | Formation of microscopic pattern using lithography and device thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5717132A true JPS5717132A (en) | 1982-01-28 |
Family
ID=14056903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9253080A Pending JPS5717132A (en) | 1980-07-07 | 1980-07-07 | Formation of microscopic pattern using lithography and device thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5717132A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5954225A (en) * | 1982-09-21 | 1984-03-29 | Hitachi Ltd | Projection exposure method |
JPS59134830A (en) * | 1982-12-30 | 1984-08-02 | トムソン−セ−エスエフ | Method and apparatus for optically arraying pattern on two close-up plane |
JPH06188171A (en) * | 1993-08-13 | 1994-07-08 | Nikon Corp | Projection exposure system |
JPH07183213A (en) * | 1994-09-30 | 1995-07-21 | Hitachi Ltd | Projection exposure method |
US5443932A (en) * | 1988-09-30 | 1995-08-22 | Canon Kabushiki Kaisha | Exposure method |
US6544698B1 (en) | 2001-06-27 | 2003-04-08 | University Of South Florida | Maskless 2-D and 3-D pattern generation photolithography |
US6764796B2 (en) | 2001-06-27 | 2004-07-20 | University Of South Florida | Maskless photolithography using plasma displays |
US6998219B2 (en) | 2001-06-27 | 2006-02-14 | University Of South Florida | Maskless photolithography for etching and deposition |
US7271877B2 (en) | 2001-06-27 | 2007-09-18 | University Of South Florida | Method and apparatus for maskless photolithography |
US7468238B2 (en) | 2001-06-27 | 2008-12-23 | University Of South Florida | Maskless photolithography for using photoreactive agents |
-
1980
- 1980-07-07 JP JP9253080A patent/JPS5717132A/en active Pending
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0474854B2 (en) * | 1982-09-21 | 1992-11-27 | ||
JPS5954225A (en) * | 1982-09-21 | 1984-03-29 | Hitachi Ltd | Projection exposure method |
JPS59134830A (en) * | 1982-12-30 | 1984-08-02 | トムソン−セ−エスエフ | Method and apparatus for optically arraying pattern on two close-up plane |
JPS6352453B2 (en) * | 1982-12-30 | 1988-10-19 | Tomuson Sa | |
US5443932A (en) * | 1988-09-30 | 1995-08-22 | Canon Kabushiki Kaisha | Exposure method |
JPH06188171A (en) * | 1993-08-13 | 1994-07-08 | Nikon Corp | Projection exposure system |
JPH0738376B2 (en) * | 1993-08-13 | 1995-04-26 | 株式会社ニコン | Projection exposure device |
JPH07183213A (en) * | 1994-09-30 | 1995-07-21 | Hitachi Ltd | Projection exposure method |
US6544698B1 (en) | 2001-06-27 | 2003-04-08 | University Of South Florida | Maskless 2-D and 3-D pattern generation photolithography |
US6764796B2 (en) | 2001-06-27 | 2004-07-20 | University Of South Florida | Maskless photolithography using plasma displays |
US6998219B2 (en) | 2001-06-27 | 2006-02-14 | University Of South Florida | Maskless photolithography for etching and deposition |
US7271877B2 (en) | 2001-06-27 | 2007-09-18 | University Of South Florida | Method and apparatus for maskless photolithography |
US7468238B2 (en) | 2001-06-27 | 2008-12-23 | University Of South Florida | Maskless photolithography for using photoreactive agents |
US7573561B2 (en) | 2001-06-27 | 2009-08-11 | University Of South Florida | Method and apparatus for maskless photolithography |
US7572573B2 (en) | 2001-06-27 | 2009-08-11 | University Of South Florida | Maskless photolithography for etching and deposition |
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