DE68927430D1 - Belichtungseinrichtung - Google Patents
BelichtungseinrichtungInfo
- Publication number
- DE68927430D1 DE68927430D1 DE68927430T DE68927430T DE68927430D1 DE 68927430 D1 DE68927430 D1 DE 68927430D1 DE 68927430 T DE68927430 T DE 68927430T DE 68927430 T DE68927430 T DE 68927430T DE 68927430 D1 DE68927430 D1 DE 68927430D1
- Authority
- DE
- Germany
- Prior art keywords
- exposure device
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63218522A JP2700392B2 (ja) | 1988-09-02 | 1988-09-02 | 露光装置 |
JP63222253A JPH0271508A (ja) | 1988-09-07 | 1988-09-07 | 露光装置 |
JP63222251A JP2750582B2 (ja) | 1988-09-07 | 1988-09-07 | X線露光方法 |
JP63223483A JP2640247B2 (ja) | 1988-09-08 | 1988-09-08 | 露光装置 |
JP63227388A JP2741039B2 (ja) | 1988-09-13 | 1988-09-13 | 露光装置 |
JP63227389A JPH0276215A (ja) | 1988-09-13 | 1988-09-13 | 露光装置 |
JP1133795A JP2877352B2 (ja) | 1989-05-26 | 1989-05-26 | X線露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68927430D1 true DE68927430D1 (de) | 1996-12-12 |
DE68927430T2 DE68927430T2 (de) | 1997-03-13 |
Family
ID=27566014
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68929187T Expired - Fee Related DE68929187T2 (de) | 1988-09-02 | 1989-08-31 | Belichtungsapparat |
DE68927430T Expired - Fee Related DE68927430T2 (de) | 1988-09-02 | 1989-08-31 | Belichtungseinrichtung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68929187T Expired - Fee Related DE68929187T2 (de) | 1988-09-02 | 1989-08-31 | Belichtungsapparat |
Country Status (3)
Country | Link |
---|---|
US (1) | US5157700A (de) |
EP (2) | EP0694817B1 (de) |
DE (2) | DE68929187T2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5365561A (en) * | 1988-03-25 | 1994-11-15 | Canon Kabushiki Kaisha | Exposure control in an X-ray exposure apparatus |
DE68925323T2 (de) * | 1988-09-14 | 1996-05-30 | Canon K.K., Tokio/Tokyo | Belichtungssteuerung in einem Röntgenbelichtungsapparat |
JP2770960B2 (ja) * | 1988-10-06 | 1998-07-02 | キヤノン株式会社 | Sor−x線露光装置 |
EP0425739B1 (de) * | 1989-10-30 | 1995-02-22 | Canon Kabushiki Kaisha | Ausrichtevorrichtung und eine damit versehene Synchrotron-Röntgenbelichtungsvorrichtung |
EP0446076B1 (de) * | 1990-03-09 | 1997-07-09 | Canon Kabushiki Kaisha | Belichtungsvorrichtung |
JP3025545B2 (ja) * | 1991-03-18 | 2000-03-27 | キヤノン株式会社 | X線リソグラフィ用マスクおよびx線リソグラフィ露光装置 |
EP0588579B1 (de) * | 1992-09-14 | 1998-12-02 | Canon Kabushiki Kaisha | Synchrotron-Röntgenbelichtungsverfahren |
JP3049680B2 (ja) * | 1993-06-14 | 2000-06-05 | キヤノン株式会社 | ビーム位置検出装置及びこれを用いたシステム |
JP3291408B2 (ja) * | 1994-04-04 | 2002-06-10 | キヤノン株式会社 | 露光装置および集積回路の製造方法 |
JPH07321024A (ja) * | 1994-05-25 | 1995-12-08 | Canon Inc | 位置決め方法およびその装置ならびにこれらを用いた露光装置 |
US5835560A (en) * | 1994-05-24 | 1998-11-10 | Canon Kabushiki Kaisha | Exposure apparatus |
JP3391940B2 (ja) * | 1995-06-26 | 2003-03-31 | キヤノン株式会社 | 照明装置及び露光装置 |
JP3666951B2 (ja) | 1995-10-06 | 2005-06-29 | キヤノン株式会社 | マーク検出方法、これを用いた位置合わせ方法、露光方法及び装置、ならびにデバイス生産方法 |
TW341719B (en) * | 1996-03-01 | 1998-10-01 | Canon Kk | Surface position detecting method and scanning exposure method using the same |
JP3862347B2 (ja) * | 1996-04-11 | 2006-12-27 | キヤノン株式会社 | X線縮小露光装置およびこれを利用したデバイス製造方法 |
JP3284045B2 (ja) * | 1996-04-30 | 2002-05-20 | キヤノン株式会社 | X線光学装置およびデバイス製造方法 |
US6559465B1 (en) * | 1996-08-02 | 2003-05-06 | Canon Kabushiki Kaisha | Surface position detecting method having a detection timing determination |
JP3337921B2 (ja) | 1996-08-23 | 2002-10-28 | キヤノン株式会社 | 投影露光装置および位置合せ方法 |
KR0174997B1 (ko) * | 1996-12-20 | 1999-03-20 | 김광호 | 노광설비의 이중노광 방지장치 |
JP3689516B2 (ja) * | 1997-01-29 | 2005-08-31 | キヤノン株式会社 | 電子ビーム露光装置 |
JP2000294523A (ja) * | 1999-04-01 | 2000-10-20 | Sony Corp | 半導体製造装置および半導体装置の製造方法 |
US6484088B1 (en) * | 1999-05-04 | 2002-11-19 | Ssi Technologies, Inc. | Fuel optimization system with improved fuel level sensor |
US6573732B1 (en) * | 1999-05-04 | 2003-06-03 | Ssi Technologies, Inc. | Dynamic range sensor and method of detecting near field echo signals |
US6295332B1 (en) * | 1999-06-12 | 2001-09-25 | Robert Allen Selzer | Method of improving x-ray lithography in the sub 100nm range to create high quality semiconductor devices |
JP2000357643A (ja) | 1999-06-14 | 2000-12-26 | Canon Inc | 露光方法及びそれを用いた露光装置 |
JP2000357644A (ja) | 1999-06-14 | 2000-12-26 | Canon Inc | 露光方法及び露光装置 |
US6954255B2 (en) * | 2001-06-15 | 2005-10-11 | Canon Kabushiki Kaisha | Exposure apparatus |
US6934003B2 (en) | 2002-01-07 | 2005-08-23 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
JP2003297891A (ja) * | 2002-01-31 | 2003-10-17 | Rigaku Industrial Co | 半導体用蛍光x線分析装置 |
US20070147579A1 (en) * | 2005-12-23 | 2007-06-28 | De Man Bruno K B | Method and system for radiographic imaging with organ-based radiation profile prescription |
JP4789260B2 (ja) * | 2006-08-23 | 2011-10-12 | エスアイアイ・ナノテクノロジー株式会社 | 荷電粒子ビーム装置及びアパーチャの軸調整方法 |
EP2461347A1 (de) | 2010-12-06 | 2012-06-06 | Fei Company | Detektorsystem für Transmissionselektronenmikroskop |
DE102016220096B3 (de) * | 2016-10-14 | 2018-02-08 | Siemens Healthcare Gmbh | Verfahren zur Generierung von Röntgenbilddaten |
US20180333657A1 (en) * | 2017-05-17 | 2018-11-22 | Sable Sand Solutions Inc. | Detection of contents of a sand separator using radiation |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2722958A1 (de) * | 1977-05-20 | 1978-11-23 | Siemens Ag | Verfahren zur justierung einer halbleiterscheibe relativ zu einer bestrahlungsmaske bei der roentgenstrahl-fotolithografie |
JPS5645026A (en) | 1979-09-20 | 1981-04-24 | Matsushita Electric Ind Co Ltd | Forming method for resin film on semiconductor substrate |
JPS6037616B2 (ja) | 1980-01-24 | 1985-08-27 | 理学電機株式会社 | X線リゾグラフイ装置 |
JPS57101839A (en) | 1980-12-18 | 1982-06-24 | Nippon Kogaku Kk <Nikon> | Exposure device for wafer or photomask |
JPS57117238A (en) * | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
EP0083394B1 (de) * | 1981-12-31 | 1986-04-09 | International Business Machines Corporation | Verfahren und Vorrichtung für die gleichmässige Beleuchtung einer Fläche |
JPS5952246A (ja) * | 1982-09-20 | 1984-03-26 | Nippon Kogaku Kk <Nikon> | 露光制御装置 |
JPS59198726A (ja) | 1983-04-26 | 1984-11-10 | Fujitsu Ltd | Mic装置の製造方法 |
JPS6084814A (ja) | 1983-06-22 | 1985-05-14 | Agency Of Ind Science & Technol | X線投射装置 |
JPS60198726A (ja) | 1984-03-23 | 1985-10-08 | Hitachi Ltd | X線露光装置の露光量調整方法と装置 |
JPS6159828A (ja) | 1984-08-31 | 1986-03-27 | Nippon Telegr & Teleph Corp <Ntt> | X線リソグラフイ装置 |
JPS61113065A (ja) | 1984-11-07 | 1986-05-30 | Hitachi Ltd | 露光装置 |
JPS61141135A (ja) | 1984-12-14 | 1986-06-28 | Hitachi Ltd | X線リソグラフイ装置 |
JPS61276223A (ja) | 1985-05-30 | 1986-12-06 | Fujitsu Ltd | X線露光方法 |
JPS6414918A (en) * | 1987-07-08 | 1989-01-19 | Nikon Corp | Stepper |
AT393334B (de) * | 1988-01-22 | 1991-09-25 | Ims Ionen Mikrofab Syst | Anordnung zur stabilisierung einer bestrahlten maske |
US4804978A (en) * | 1988-02-19 | 1989-02-14 | The Perkin-Elmer Corporation | Exposure control system for full field photolithography using pulsed sources |
-
1989
- 1989-08-31 US US07/401,615 patent/US5157700A/en not_active Expired - Fee Related
- 1989-08-31 DE DE68929187T patent/DE68929187T2/de not_active Expired - Fee Related
- 1989-08-31 DE DE68927430T patent/DE68927430T2/de not_active Expired - Fee Related
- 1989-08-31 EP EP95202632A patent/EP0694817B1/de not_active Expired - Lifetime
- 1989-08-31 EP EP89308823A patent/EP0357425B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5157700A (en) | 1992-10-20 |
EP0694817A3 (de) | 1996-04-10 |
EP0357425A3 (de) | 1991-09-18 |
DE68927430T2 (de) | 1997-03-13 |
EP0694817A2 (de) | 1996-01-31 |
EP0694817B1 (de) | 2000-03-22 |
EP0357425B1 (de) | 1996-11-06 |
DE68929187D1 (de) | 2000-04-27 |
DE68929187T2 (de) | 2000-09-28 |
EP0357425A2 (de) | 1990-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |