DE68921687D1 - Belichtungseinrichtung. - Google Patents

Belichtungseinrichtung.

Info

Publication number
DE68921687D1
DE68921687D1 DE68921687T DE68921687T DE68921687D1 DE 68921687 D1 DE68921687 D1 DE 68921687D1 DE 68921687 T DE68921687 T DE 68921687T DE 68921687 T DE68921687 T DE 68921687T DE 68921687 D1 DE68921687 D1 DE 68921687D1
Authority
DE
Germany
Prior art keywords
exposure device
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68921687T
Other languages
English (en)
Other versions
DE68921687T2 (de
Inventor
Tetsuzo Mori
Eiji Sakamoto
Shinichi Hara
Koji Uda
Isamu Shimoda
Shinichi Uzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63218520A external-priority patent/JP2745413B2/ja
Priority claimed from JP1138809A external-priority patent/JP2774574B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE68921687D1 publication Critical patent/DE68921687D1/de
Publication of DE68921687T2 publication Critical patent/DE68921687T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

Landscapes

  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE68921687T 1988-09-02 1989-08-31 Belichtungseinrichtung. Expired - Fee Related DE68921687T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63218520A JP2745413B2 (ja) 1988-09-02 1988-09-02 露光装置
JP1138809A JP2774574B2 (ja) 1989-05-30 1989-05-30 露光装置

Publications (2)

Publication Number Publication Date
DE68921687D1 true DE68921687D1 (de) 1995-04-20
DE68921687T2 DE68921687T2 (de) 1995-08-03

Family

ID=26471763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68921687T Expired - Fee Related DE68921687T2 (de) 1988-09-02 1989-08-31 Belichtungseinrichtung.

Country Status (3)

Country Link
US (1) US5063582A (de)
EP (1) EP0357423B1 (de)
DE (1) DE68921687T2 (de)

Families Citing this family (58)

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Publication number Priority date Publication date Assignee Title
JPH01284793A (ja) * 1988-05-11 1989-11-16 Canon Inc 基板支持装置
DE68922061T2 (de) * 1988-10-03 1995-08-31 Canon Kk Vorrichtung zum Regeln der Temperatur.
US5231291A (en) * 1989-08-01 1993-07-27 Canon Kabushiki Kaisha Wafer table and exposure apparatus with the same
JP2737010B2 (ja) * 1989-08-01 1998-04-08 キヤノン株式会社 露光装置
US5138643A (en) * 1989-10-02 1992-08-11 Canon Kabushiki Kaisha Exposure apparatus
US5001423A (en) * 1990-01-24 1991-03-19 International Business Machines Corporation Dry interface thermal chuck temperature control system for semiconductor wafer testing
JP3168018B2 (ja) * 1991-03-22 2001-05-21 キヤノン株式会社 基板吸着保持方法
US5154661A (en) * 1991-07-10 1992-10-13 Noah Precision, Inc. Thermal electric cooling system and method
EP0532236B1 (de) * 1991-09-07 1997-07-16 Canon Kabushiki Kaisha System zur Stabilisierung der Formen von optischen Elementen, Belichtungsvorrichtung unter Verwendung dieses Systems und Verfahren zur Herstellung von Halbleitervorrichtungen
JP3224157B2 (ja) * 1992-03-31 2001-10-29 キヤノン株式会社 Ｘ線マスクとその製造方法、並びに該ｘ線マスクを用いたデバイス製造方法とｘ線露光装置
US5333035A (en) * 1992-05-15 1994-07-26 Nikon Corporation Exposing method
KR0139039B1 (ko) * 1993-06-30 1998-06-01 미타라이 하지메 노광장치와 이것을 이용한 디바이스 제조방법
JP3210145B2 (ja) 1993-07-14 2001-09-17 キヤノン株式会社 走査型露光装置及び該装置を用いてデバイスを製造する方法
US5450726A (en) * 1993-07-16 1995-09-19 Noah Precision, Inc. Thermal electric air cooling apparatus and method
US5696623A (en) * 1993-08-05 1997-12-09 Fujitsu Limited UV exposure with elongated service lifetime
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus
EP0715215B1 (de) * 1994-11-29 2001-05-30 Canon Kabushiki Kaisha Ausrichtverfahren und Halbleiterbelichtungsverfahren
US5679502A (en) * 1995-03-15 1997-10-21 Wisconsin Alumni Research Foundation Method and apparatus for micromachining using hard X-rays
JP3391940B2 (ja) * 1995-06-26 2003-03-31 キヤノン株式会社 照明装置及び露光装置
JP3487383B2 (ja) * 1995-07-06 2004-01-19 株式会社ニコン 露光装置及びそれを用いる素子製造方法
US5877843A (en) * 1995-09-12 1999-03-02 Nikon Corporation Exposure apparatus
US6645701B1 (en) 1995-11-22 2003-11-11 Nikon Corporation Exposure method and exposure apparatus
JP4011643B2 (ja) * 1996-01-05 2007-11-21 キヤノン株式会社 半導体製造装置
US5854819A (en) * 1996-02-07 1998-12-29 Canon Kabushiki Kaisha Mask supporting device and correction method therefor, and exposure apparatus and device producing method utilizing the same
TW341719B (en) * 1996-03-01 1998-10-01 Canon Kk Surface position detecting method and scanning exposure method using the same
JP3814359B2 (ja) * 1996-03-12 2006-08-30 キヤノン株式会社 Ｘ線投影露光装置及びデバイス製造方法
JP3695000B2 (ja) * 1996-08-08 2005-09-14 株式会社ニコン 露光方法及び露光装置
JP3337921B2 (ja) 1996-08-23 2002-10-28 キヤノン株式会社 投影露光装置および位置合せ方法
JP3372782B2 (ja) * 1996-10-04 2003-02-04 キヤノン株式会社 走査ステージ装置および走査型露光装置
JP3352354B2 (ja) * 1997-04-28 2002-12-03 キヤノン株式会社 露光装置およびデバイス製造方法
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
KR100805142B1 (ko) * 1999-07-16 2008-02-21 가부시키가이샤 니콘 노광방법 및 노광장치
US6445439B1 (en) * 1999-12-27 2002-09-03 Svg Lithography Systems, Inc. EUV reticle thermal management
TWI238292B (en) * 2000-02-10 2005-08-21 Asml Netherlands Bv Lithographic projection apparatus having a temperature controlled heat shield
JP3869999B2 (ja) 2000-03-30 2007-01-17 キヤノン株式会社 露光装置および半導体デバイス製造方法
US6967177B1 (en) * 2000-09-27 2005-11-22 Lsi Logic Corporation Temperature control system
US6954255B2 (en) * 2001-06-15 2005-10-11 Canon Kabushiki Kaisha Exposure apparatus
DE60232568D1 (de) * 2001-07-09 2009-07-23 Canon Kk Belichtungsapparat
US6934003B2 (en) 2002-01-07 2005-08-23 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
CN1938646B (zh) 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
EP3252533B1 (de) 2004-02-04 2019-04-10 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung eines artikels
US8749762B2 (en) * 2004-05-11 2014-06-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7656506B2 (en) * 2004-12-23 2010-02-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing a substrate handler
JP2006245157A (ja) * 2005-03-02 2006-09-14 Canon Inc 露光方法及び露光装置
JP4872916B2 (ja) 2005-04-18 2012-02-08 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置
US20070000441A1 (en) * 2005-07-01 2007-01-04 Applied Materials, Inc. Scalable uniform thermal plate
US7746447B2 (en) * 2005-12-22 2010-06-29 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and method of calibrating a lithographic apparatus
EP1843206B1 (de) * 2006-04-06 2012-09-05 ASML Netherlands B.V. Lithografisches Gerät und Verfahren zur Herstellung einer Vorrichtung
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US7916267B2 (en) * 2006-08-29 2011-03-29 Asml Netherlands B.V. Lithographic apparatus, and motor cooling device
US8767174B2 (en) * 2010-02-18 2014-07-01 Nikon Corporation Temperature-controlled holding devices for planar articles
JP2014086701A (ja) * 2012-10-26 2014-05-12 Canon Inc 保持装置、リソグラフィ装置及び物品の製造方法
US9541846B2 (en) * 2013-09-06 2017-01-10 Taiwan Semiconductor Manufacturing Co., Ltd. Homogeneous thermal equalization with active device
JP2018531410A (ja) 2015-10-06 2018-10-25 エーエスエムエル ホールディング エヌ．ブイ． リソグラフィ装置のオブジェクトを保持するためのチャック及びクランプ、並びにリソグラフィ装置のクランプによって保持されるオブジェクトの温度を制御する方法
WO2020242611A1 (en) * 2019-05-24 2020-12-03 Applied Materials, Inc. System and method for aligning a mask with a substrate

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CH586464A5 (de) * 1974-12-06 1977-03-31 Bbc Brown Boveri & Cie
US4072188A (en) * 1975-07-02 1978-02-07 Honeywell Information Systems Inc. Fluid cooling systems for electronic systems
DD127137B1 (de) * 1976-08-17 1979-11-28 Elektromat Veb Vorrichtung zum kompensieren der waermeeinwirkung an justier- und belichtungseinrichtungen
US4194233A (en) * 1978-01-30 1980-03-18 Rockwell International Corporation Mask apparatus for fine-line lithography
DE2837353C2 (de) * 1978-08-26 1986-01-02 Brown, Boveri & Cie Ag, 6800 Mannheim Kühleinrichtung zur Kühlung verlustwärmeerzeugender elektronischer Leistungshalbleiterbauelemente mit einem Kühlmittelkreislauf
US4514636A (en) * 1979-09-14 1985-04-30 Eaton Corporation Ion treatment apparatus
US4376581A (en) * 1979-12-20 1983-03-15 Censor Patent- Und Versuchs-Anstalt Method of positioning disk-shaped workpieces, preferably semiconductor wafers
JPS57169244A (en) * 1981-04-13 1982-10-18 Canon Inc Temperature controller for mask and wafer
DD160756A3 (de) * 1981-04-24 1984-02-29 Gudrun Dietz Anordnung zur verbesserung fotochemischer umsetzungsprozesse in fotoresistschichten
US4516253A (en) * 1983-03-15 1985-05-07 Micronix Partners Lithography system
JPS60158626A (ja) * 1984-01-30 1985-08-20 Canon Inc 半導体露光装置
JPS6119129A (ja) * 1984-07-05 1986-01-28 Nippon Kogaku Kk <Nikon> 投影光学装置
JPS61160934A (ja) * 1985-01-10 1986-07-21 Canon Inc 投影光学装置
US4843563A (en) * 1985-03-25 1989-06-27 Canon Kabushiki Kaisha Step-and-repeat alignment and exposure method and apparatus

Also Published As

Publication number Publication date
EP0357423B1 (de) 1995-03-15
EP0357423A2 (de) 1990-03-07
DE68921687T2 (de) 1995-08-03
US5063582A (en) 1991-11-05
EP0357423A3 (de) 1991-02-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8381 Inventor (new situation)

Free format text: MORI, TETSUZO, ATSUGI-SHI KANAGAWA-KEN, JP SAKAMOTO, EIJI, UTSUNOMIYA-SHI TOCHIGI-KEN, JP HARA, SHINICHI, SAITAMA-KEN, JP UDA, KOJI, YOKOHAMA-SHI KANAGAWA-KEN, JP SHIMODA, ISAMU, ZAMA-SHI KANAGAWA-KEN, JP UZAWA, SHINICHI, TOKYO, JP OZAWA, KUNITAKA, UTSUNOMIYA-SHI TOCHIGI-KEN, JP

8339 Ceased/non-payment of the annual fee