DE68923727D1 - Verfahren zur Herstellung eines aktiven Matrixsubstrats. - Google Patents
Verfahren zur Herstellung eines aktiven Matrixsubstrats.Info
- Publication number
- DE68923727D1 DE68923727D1 DE68923727T DE68923727T DE68923727D1 DE 68923727 D1 DE68923727 D1 DE 68923727D1 DE 68923727 T DE68923727 T DE 68923727T DE 68923727 T DE68923727 T DE 68923727T DE 68923727 D1 DE68923727 D1 DE 68923727D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- active matrix
- matrix substrate
- substrate
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000011159 matrix material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9700888 | 1988-04-20 | ||
JP63248197A JPH0242761A (ja) | 1988-04-20 | 1988-09-30 | アクティブマトリクス基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68923727D1 true DE68923727D1 (de) | 1995-09-14 |
DE68923727T2 DE68923727T2 (de) | 1996-03-21 |
Family
ID=26438156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68923727T Expired - Fee Related DE68923727T2 (de) | 1988-04-20 | 1989-04-18 | Verfahren zur Herstellung eines aktiven Matrixsubstrats. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5622814A (de) |
EP (1) | EP0338766B1 (de) |
JP (1) | JPH0242761A (de) |
KR (1) | KR930007529B1 (de) |
DE (1) | DE68923727T2 (de) |
Families Citing this family (71)
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JP2604867B2 (ja) * | 1990-01-11 | 1997-04-30 | 松下電器産業株式会社 | 反射型液晶表示デバイス |
JP2767958B2 (ja) * | 1990-02-20 | 1998-06-25 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JP2938121B2 (ja) * | 1990-03-30 | 1999-08-23 | 株式会社東芝 | 薄膜半導体装置の製造方法 |
US6314823B1 (en) | 1991-09-20 | 2001-11-13 | Kazuhiro Okada | Force detector and acceleration detector and method of manufacturing the same |
US5421213A (en) * | 1990-10-12 | 1995-06-06 | Okada; Kazuhiro | Multi-dimensional force detector |
EP0493113B1 (de) * | 1990-12-28 | 1997-03-19 | Sharp Kabushiki Kaisha | Ein Verfahren zum Herstellen eines Dünnfilm-Transistors und eines Aktive-Matrix-Substrates für Flüssig-Kristall-Anzeige-Anordnungen |
US5474941A (en) * | 1990-12-28 | 1995-12-12 | Sharp Kabushiki Kaisha | Method for producing an active matrix substrate |
US5420048A (en) * | 1991-01-09 | 1995-05-30 | Canon Kabushiki Kaisha | Manufacturing method for SOI-type thin film transistor |
GB9114018D0 (en) * | 1991-06-28 | 1991-08-14 | Philips Electronic Associated | Thin-film transistor manufacture |
JP3172840B2 (ja) * | 1992-01-28 | 2001-06-04 | 株式会社日立製作所 | アクティブマトリクス基板の製造方法および液晶表示装置 |
JP3172841B2 (ja) * | 1992-02-19 | 2001-06-04 | 株式会社日立製作所 | 薄膜トランジスタとその製造方法及び液晶表示装置 |
US5254480A (en) * | 1992-02-20 | 1993-10-19 | Minnesota Mining And Manufacturing Company | Process for producing a large area solid state radiation detector |
GB9217743D0 (en) * | 1992-08-19 | 1992-09-30 | Philips Electronics Uk Ltd | A semiconductor memory device |
JP2530990B2 (ja) * | 1992-10-15 | 1996-09-04 | 富士通株式会社 | 薄膜トランジスタ・マトリクスの製造方法 |
US5643801A (en) * | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
US6544825B1 (en) | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
US6410374B1 (en) | 1992-12-26 | 2002-06-25 | Semiconductor Energy Laborartory Co., Ltd. | Method of crystallizing a semiconductor layer in a MIS transistor |
US6282956B1 (en) | 1994-12-29 | 2001-09-04 | Kazuhiro Okada | Multi-axial angular velocity sensor |
JP2755376B2 (ja) * | 1994-06-03 | 1998-05-20 | 株式会社フロンテック | 電気光学素子の製造方法 |
JP3469337B2 (ja) | 1994-12-16 | 2003-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3778456B2 (ja) | 1995-02-21 | 2006-05-24 | 株式会社半導体エネルギー研究所 | 絶縁ゲイト型薄膜半導体装置の作製方法 |
JP3478012B2 (ja) * | 1995-09-29 | 2003-12-10 | ソニー株式会社 | 薄膜半導体装置の製造方法 |
KR100193348B1 (ko) * | 1996-02-12 | 1999-07-01 | 구자홍 | 액정표시장치의 박막트랜지스터 제조방법 |
KR100448934B1 (ko) * | 1996-12-27 | 2004-12-04 | 삼성전자주식회사 | 액정표시장치의제조방법 |
JP3883641B2 (ja) * | 1997-03-27 | 2007-02-21 | 株式会社半導体エネルギー研究所 | コンタクト構造およびアクティブマトリクス型表示装置 |
KR100271043B1 (ko) * | 1997-11-28 | 2000-11-01 | 구본준, 론 위라하디락사 | 액정표시장치의 기판 및 그 제조방법(liquid crystal display and method of manufacturing the same) |
US6372535B1 (en) | 1998-02-02 | 2002-04-16 | Samsung Electronics Co., Ltd. | Manufacturing method of a thin film transistor |
JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4118485B2 (ja) * | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW521316B (en) * | 2000-11-09 | 2003-02-21 | Macronix Int Co Ltd | Manufacturing method for reducing critical dimensions |
DE60230238D1 (de) * | 2001-01-19 | 2009-01-22 | Atraverda Ltd | Elektrode für eine batterie |
US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR100495701B1 (ko) * | 2001-03-07 | 2005-06-14 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시장치의 제조방법 |
US6794119B2 (en) * | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
US6887627B2 (en) * | 2002-04-26 | 2005-05-03 | Macronix International Co., Ltd. | Method of fabricating phase shift mask |
US7781850B2 (en) | 2002-09-20 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Controlling electromechanical behavior of structures within a microelectromechanical systems device |
TW564564B (en) * | 2002-10-03 | 2003-12-01 | Au Optronics Corp | Pixel structure and fabricating method thereof |
US6995045B2 (en) * | 2003-03-05 | 2006-02-07 | Chunghwa Picture Tubes, Ltd. | Thin film transistor and method of forming thin film transistor |
TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
US7221495B2 (en) * | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
US7867695B2 (en) | 2003-09-11 | 2011-01-11 | Bright View Technologies Corporation | Methods for mastering microstructures through a substrate using negative photoresist |
US7190387B2 (en) | 2003-09-11 | 2007-03-13 | Bright View Technologies, Inc. | Systems for fabricating optical microstructures using a cylindrical platform and a rastered radiation beam |
US7192692B2 (en) | 2003-09-11 | 2007-03-20 | Bright View Technologies, Inc. | Methods for fabricating microstructures by imaging a radiation sensitive layer sandwiched between outer layers |
US7720148B2 (en) * | 2004-03-26 | 2010-05-18 | The Hong Kong University Of Science And Technology | Efficient multi-frame motion estimation for video compression |
US20060065622A1 (en) * | 2004-09-27 | 2006-03-30 | Floyd Philip D | Method and system for xenon fluoride etching with enhanced efficiency |
US7553684B2 (en) * | 2004-09-27 | 2009-06-30 | Idc, Llc | Method of fabricating interferometric devices using lift-off processing techniques |
US7684104B2 (en) * | 2004-09-27 | 2010-03-23 | Idc, Llc | MEMS using filler material and method |
KR100685955B1 (ko) * | 2004-12-30 | 2007-02-23 | 엘지.필립스 엘시디 주식회사 | 액정 표시 장치 |
CN100343749C (zh) * | 2005-01-27 | 2007-10-17 | 广辉电子股份有限公司 | 薄膜晶体管液晶显示器的阵列基底及其制造方法 |
WO2006096904A1 (en) * | 2005-03-16 | 2006-09-21 | Newsouth Innovations Pty Limited | Photolithography method for contacting thin-film semiconductor structures |
EP2495212A3 (de) * | 2005-07-22 | 2012-10-31 | QUALCOMM MEMS Technologies, Inc. | MEMS-Vorrichtungen mit Stützstrukturen und Herstellungsverfahren dafür |
US7795061B2 (en) | 2005-12-29 | 2010-09-14 | Qualcomm Mems Technologies, Inc. | Method of creating MEMS device cavities by a non-etching process |
US7547568B2 (en) * | 2006-02-22 | 2009-06-16 | Qualcomm Mems Technologies, Inc. | Electrical conditioning of MEMS device and insulating layer thereof |
US7711239B2 (en) | 2006-04-19 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing nanoparticles |
US7763546B2 (en) | 2006-08-02 | 2010-07-27 | Qualcomm Mems Technologies, Inc. | Methods for reducing surface charges during the manufacture of microelectromechanical systems devices |
US7706042B2 (en) * | 2006-12-20 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | MEMS device and interconnects for same |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
JP2010534865A (ja) * | 2007-07-25 | 2010-11-11 | クォルコム・メムズ・テクノロジーズ・インコーポレーテッド | Mems表示装置及び該mems表示装置の製造方法 |
US7719754B2 (en) * | 2008-09-30 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Multi-thickness layers for MEMS and mask-saving sequence for same |
CN102668098B (zh) * | 2009-12-28 | 2015-07-22 | 株式会社半导体能源研究所 | 制造半导体装置的方法 |
GB2532895B (en) | 2012-02-21 | 2016-07-13 | Pragmatic Printing Ltd | Substantially planar electronic devices and circuits |
KR101960796B1 (ko) * | 2012-03-08 | 2019-07-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터의 제조 방법, 표시 기판의 제조 방법 및 표시 기판 |
CN103456742B (zh) * | 2013-08-27 | 2017-02-15 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN104112711B (zh) * | 2014-07-22 | 2017-05-03 | 深圳市华星光电技术有限公司 | 共平面型氧化物半导体tft基板的制作方法 |
CN104377246A (zh) * | 2014-10-08 | 2015-02-25 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板和显示装置 |
KR102423679B1 (ko) * | 2015-09-21 | 2022-07-21 | 삼성디스플레이 주식회사 | 표시 장치 제조 방법 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2658400A1 (de) * | 1976-12-23 | 1978-06-29 | Ibm Deutschland | Verfahren zur herstellung einer negativen maske auf einem substrat |
US4277884A (en) * | 1980-08-04 | 1981-07-14 | Rca Corporation | Method for forming an improved gate member utilizing special masking and oxidation to eliminate projecting points on silicon islands |
JPS5952881A (ja) * | 1982-09-21 | 1984-03-27 | Fujitsu Ltd | 電界効果型半導体装置の製造方法 |
JPS59224822A (ja) * | 1983-06-06 | 1984-12-17 | Fujitsu Ltd | 液晶表示パネルの構成法 |
FR2566186B1 (fr) * | 1984-06-14 | 1986-08-29 | Thomson Csf | Procede de fabrication d'au moins un transistor a effet de champ en couche mince et transistor obtenu par ce procede |
EP0196915B1 (de) * | 1985-03-29 | 1991-08-14 | Matsushita Electric Industrial Co., Ltd. | Dünnschicht-Transistorenanordnung und Methode zu deren Herstellung |
JP2913300B2 (ja) * | 1985-09-26 | 1999-06-28 | セイコーインスツルメンツ株式会社 | 薄膜トランジスタ装置の製造方法 |
FR2590409B1 (fr) * | 1985-11-15 | 1987-12-11 | Commissariat Energie Atomique | Procede de fabrication d'un transistor en couches minces a grille auto-alignee par rapport au drain et a la source de celui-ci et transistor obtenu par le procede |
JPS62140467A (ja) * | 1985-12-13 | 1987-06-24 | Sharp Corp | 薄膜トランジスタの製造方法 |
JPH0612387B2 (ja) * | 1985-12-17 | 1994-02-16 | 三洋電機株式会社 | 液晶表示装置 |
JPH07119909B2 (ja) * | 1986-08-29 | 1995-12-20 | 株式会社日立製作所 | 液晶表示素子製造方法 |
US4931351A (en) * | 1987-01-12 | 1990-06-05 | Eastman Kodak Company | Bilayer lithographic process |
GB8721193D0 (en) * | 1987-09-09 | 1987-10-14 | Wright S W | Semiconductor devices |
-
1988
- 1988-09-30 JP JP63248197A patent/JPH0242761A/ja active Pending
-
1989
- 1989-04-18 EP EP89303812A patent/EP0338766B1/de not_active Expired - Lifetime
- 1989-04-18 DE DE68923727T patent/DE68923727T2/de not_active Expired - Fee Related
- 1989-04-20 KR KR1019890005223A patent/KR930007529B1/ko not_active IP Right Cessation
-
1994
- 1994-07-11 US US08/272,634 patent/US5622814A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE68923727T2 (de) | 1996-03-21 |
KR900017166A (ko) | 1990-11-15 |
KR930007529B1 (ko) | 1993-08-12 |
US5622814A (en) | 1997-04-22 |
EP0338766A1 (de) | 1989-10-25 |
EP0338766B1 (de) | 1995-08-09 |
JPH0242761A (ja) | 1990-02-13 |
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