DE60336614D1 - Redundanz -Schaltung und -Verfahren für Halbleiterspeicher - Google Patents
Redundanz -Schaltung und -Verfahren für HalbleiterspeicherInfo
- Publication number
- DE60336614D1 DE60336614D1 DE60336614T DE60336614T DE60336614D1 DE 60336614 D1 DE60336614 D1 DE 60336614D1 DE 60336614 T DE60336614 T DE 60336614T DE 60336614 T DE60336614 T DE 60336614T DE 60336614 D1 DE60336614 D1 DE 60336614D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor memory
- redundancy circuit
- redundancy
- circuit
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
- G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/846—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by choosing redundant lines at an output stage
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/161,501 US6731550B2 (en) | 2002-05-31 | 2002-05-31 | Redundancy circuit and method for semiconductor memory devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60336614D1 true DE60336614D1 (de) | 2011-05-19 |
Family
ID=29419746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60336614T Expired - Lifetime DE60336614D1 (de) | 2002-05-31 | 2003-05-27 | Redundanz -Schaltung und -Verfahren für Halbleiterspeicher |
Country Status (4)
Country | Link |
---|---|
US (1) | US6731550B2 (de) |
EP (1) | EP1367599B1 (de) |
JP (1) | JP2004005992A (de) |
DE (1) | DE60336614D1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100472460B1 (ko) * | 2002-07-04 | 2005-03-10 | 삼성전자주식회사 | 메모리의 결함 복구 방법 및 그에 적합한 장치 |
US7047381B2 (en) * | 2002-07-19 | 2006-05-16 | Broadcom Corporation | System and method for providing one-time programmable memory with fault tolerance |
DE10256487B4 (de) * | 2002-12-03 | 2008-12-24 | Infineon Technologies Ag | Integrierter Speicher und Verfahren zum Testen eines integrierten Speichers |
US20060077734A1 (en) * | 2004-09-30 | 2006-04-13 | Fong John Y | Direct mapped repair cache systems and methods |
US7619346B2 (en) * | 2005-05-13 | 2009-11-17 | Evigia Systems, Inc. | Method and system for monitoring environmental conditions |
US20070038805A1 (en) * | 2005-08-09 | 2007-02-15 | Texas Instruments Incorporated | High granularity redundancy for ferroelectric memories |
US8677802B2 (en) * | 2006-02-04 | 2014-03-25 | Evigia Systems, Inc. | Sensing modules and methods of using |
US20110009773A1 (en) * | 2006-02-04 | 2011-01-13 | Evigia Systems, Inc. | Implantable sensing modules and methods of using |
US20080291760A1 (en) * | 2007-05-23 | 2008-11-27 | Micron Technology, Inc. | Sub-array architecture memory devices and related systems and methods |
US9075111B2 (en) | 2013-10-07 | 2015-07-07 | King Fahd University Of Petroleum And Minerals | Generalized modular redundancy fault tolerance method for combinational circuits |
US20190393204A1 (en) * | 2018-06-21 | 2019-12-26 | Xcelsis Corporation | Eliminating defects in stacks |
US11710531B2 (en) * | 2019-12-30 | 2023-07-25 | Micron Technology, Inc. | Memory redundancy repair |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4380066A (en) * | 1980-12-04 | 1983-04-12 | Burroughs Corporation | Defect tolerant memory |
JPH01224999A (ja) * | 1988-03-04 | 1989-09-07 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5179536A (en) * | 1989-01-31 | 1993-01-12 | Fujitsu Limited | Semiconductor memory device having means for replacing defective memory cells |
JPH06111596A (ja) * | 1990-10-09 | 1994-04-22 | Texas Instr Inc <Ti> | メモリ |
US5278793A (en) * | 1992-02-25 | 1994-01-11 | Yeh Tsuei Chi | Memory defect masking device |
JP2741824B2 (ja) * | 1992-10-14 | 1998-04-22 | 三菱電機株式会社 | 半導体記憶装置 |
KR100230393B1 (ko) * | 1996-12-05 | 1999-11-15 | 윤종용 | 반도체 메모리장치 |
US6188618B1 (en) * | 1998-04-23 | 2001-02-13 | Kabushiki Kaisha Toshiba | Semiconductor device with flexible redundancy system |
US6141267A (en) * | 1999-02-03 | 2000-10-31 | International Business Machines Corporation | Defect management engine for semiconductor memories and memory systems |
JP4141656B2 (ja) * | 2000-06-07 | 2008-08-27 | 株式会社東芝 | 半導体メモリ集積回路および半導体メモリ装置をテストする方法 |
JP4345204B2 (ja) * | 2000-07-04 | 2009-10-14 | エルピーダメモリ株式会社 | 半導体記憶装置 |
-
2002
- 2002-05-31 US US10/161,501 patent/US6731550B2/en not_active Expired - Lifetime
-
2003
- 2003-05-27 DE DE60336614T patent/DE60336614D1/de not_active Expired - Lifetime
- 2003-05-27 EP EP03253297A patent/EP1367599B1/de not_active Expired - Lifetime
- 2003-06-02 JP JP2003157166A patent/JP2004005992A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1367599A3 (de) | 2005-07-27 |
US20030223282A1 (en) | 2003-12-04 |
JP2004005992A (ja) | 2004-01-08 |
US6731550B2 (en) | 2004-05-04 |
EP1367599B1 (de) | 2011-04-06 |
EP1367599A2 (de) | 2003-12-03 |
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