DE60315085D1 - Resistzusammensetzung - Google Patents

Resistzusammensetzung

Info

Publication number
DE60315085D1
DE60315085D1 DE60315085T DE60315085T DE60315085D1 DE 60315085 D1 DE60315085 D1 DE 60315085D1 DE 60315085 T DE60315085 T DE 60315085T DE 60315085 T DE60315085 T DE 60315085T DE 60315085 D1 DE60315085 D1 DE 60315085D1
Authority
DE
Germany
Prior art keywords
group
acidic
blocked
acidic group
fluoropolymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60315085T
Other languages
English (en)
Other versions
DE60315085T2 (de
Inventor
Shinji Okada
Yasuhide Kawaguchi
Yoko Takebe
Isamu Kaneko
Shun-Ichi Kodama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of DE60315085D1 publication Critical patent/DE60315085D1/de
Publication of DE60315085T2 publication Critical patent/DE60315085T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Acyclic And Carbocyclic Compounds In Medicinal Compositions (AREA)
DE60315085T 2002-03-04 2003-03-03 Resistzusammensetzung Expired - Fee Related DE60315085T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002057342A JP4010160B2 (ja) 2002-03-04 2002-03-04 レジスト組成物
JP2002057342 2002-03-04

Publications (2)

Publication Number Publication Date
DE60315085D1 true DE60315085D1 (de) 2007-09-06
DE60315085T2 DE60315085T2 (de) 2008-04-10

Family

ID=27751036

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60315085T Expired - Fee Related DE60315085T2 (de) 2002-03-04 2003-03-03 Resistzusammensetzung

Country Status (8)

Country Link
US (1) US6815146B2 (de)
EP (1) EP1343047B1 (de)
JP (1) JP4010160B2 (de)
KR (1) KR20040002451A (de)
CN (1) CN100422853C (de)
AT (1) ATE368241T1 (de)
DE (1) DE60315085T2 (de)
TW (1) TWI300882B (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001274579A1 (en) * 2000-06-21 2002-01-02 Asahi Glass Company, Limited Resist composition
JP2004004561A (ja) * 2002-02-19 2004-01-08 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP2003330196A (ja) * 2002-03-05 2003-11-19 Jsr Corp 感放射線性樹脂組成物
JP2004004703A (ja) * 2002-04-03 2004-01-08 Sumitomo Chem Co Ltd ポジ型レジスト組成物
JP3856122B2 (ja) * 2002-04-05 2006-12-13 信越化学工業株式会社 レジスト材料及びパターン形成方法
US6866983B2 (en) * 2002-04-05 2005-03-15 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
JP4186054B2 (ja) * 2002-04-05 2008-11-26 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR20050058383A (ko) * 2002-08-21 2005-06-16 아사히 가라스 가부시키가이샤 함불소 화합물, 함불소 폴리머 및 그 제조 방법
JPWO2004024787A1 (ja) * 2002-09-13 2006-01-05 ダイキン工業株式会社 レジスト用含フッ素重合体の製造方法
EP1559729A4 (de) * 2002-11-07 2007-12-05 Asahi Glass Co Ltd Fluorpolymer
KR20050071666A (ko) * 2002-11-07 2005-07-07 아사히 가라스 가부시키가이샤 레지스트 조성물
JP2005060664A (ja) * 2003-07-31 2005-03-10 Asahi Glass Co Ltd 含フッ素化合物、含フッ素ポリマーとその製造方法およびそれを含むレジスト組成物
JP2005097531A (ja) * 2003-08-21 2005-04-14 Asahi Glass Co Ltd 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物
DE602004022442D1 (de) * 2003-10-31 2009-09-17 Asahi Glass Co Ltd Fluorverbindung, flourpolymer und verfahren zur herstellung davon
JP2005162861A (ja) * 2003-12-02 2005-06-23 Asahi Glass Co Ltd 含フッ素ポリマー
JP2005173463A (ja) * 2003-12-15 2005-06-30 Tokyo Ohka Kogyo Co Ltd ホトレジスト組成物およびレジストパターン形成方法
US7256873B2 (en) * 2004-01-28 2007-08-14 Asml Netherlands B.V. Enhanced lithographic resolution through double exposure
JP4568278B2 (ja) * 2004-03-08 2010-10-27 三菱レイヨン株式会社 レジスト材料、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
JP4407358B2 (ja) * 2004-04-14 2010-02-03 旭硝子株式会社 含フッ素ポリマーおよびレジスト組成物
EP1741730B1 (de) 2004-04-27 2010-05-12 Tokyo Ohka Kogyo Co., Ltd. Material zur bildung eines resistschutzfilms für das eintauchbelichtungsverfahren und verfahren zur bildung eines resistmusters unter verwendung des schutzfilms
WO2005108446A1 (ja) * 2004-05-07 2005-11-17 Asahi Glass Company, Limited 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物
JP4368267B2 (ja) 2004-07-30 2009-11-18 東京応化工業株式会社 レジスト保護膜形成用材料、およびこれを用いたレジストパターン形成方法
WO2006011427A1 (ja) * 2004-07-30 2006-02-02 Asahi Glass Company, Limited 含フッ素化合物、含フッ素ポリマー、レジスト組成物、およびレジスト保護膜組成物
US20060249332A1 (en) * 2005-05-06 2006-11-09 General Electric Company Oil supply and scavenge system
WO2006132287A1 (ja) * 2005-06-08 2006-12-14 Asahi Glass Company, Limited 含フッ素共重合体とその製造方法およびそれを含むレジスト組成物
JP4677857B2 (ja) 2005-08-23 2011-04-27 ヤマハ株式会社 楽器用部材または楽器とその製造方法
DE602008006178D1 (de) * 2007-03-30 2011-05-26 Asahi Glass Co Ltd Neue fluorhaltige verbindung, fluorhaltiges polymer und verfahren zur herstellung der verbindung
JP5238399B2 (ja) * 2008-08-04 2013-07-17 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
KR102511757B1 (ko) * 2015-07-23 2023-03-20 디아이씨 가부시끼가이샤 함불소 화합물, 리빙 중합개시제, 함불소 중합체, 함불소 중합체의 제조 방법 및 레지스트 조성물
US10529552B2 (en) * 2017-11-29 2020-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing a semiconductor device and a coating material
JP6860032B2 (ja) * 2019-04-04 2021-04-14 ダイキン工業株式会社 パーフルオロアルキン化合物の製造方法
WO2023157591A1 (ja) * 2022-02-21 2023-08-24 Ａｇｃ株式会社 含フッ素重合体、組成物、防湿コート剤及び物品

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0459804A (ja) * 1990-06-29 1992-02-26 Asahi Glass Co Ltd 溶融成形性に優れた樹脂
JP3005040B2 (ja) * 1990-11-22 2000-01-31 旭硝子株式会社 コーティング用樹脂組成物
JP3025799B2 (ja) * 1990-11-22 2000-03-27 旭硝子株式会社 紫外光透過性に優れた重合体およびその製法
CN1253759C (zh) 1998-09-23 2006-04-26 纳幕尔杜邦公司 微石印用光致抗蚀剂、聚合物和工艺
AU4678100A (en) 1999-05-04 2000-11-17 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6468712B1 (en) * 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
TW588220B (en) * 2000-04-04 2004-05-21 Daikin Ind Ltd Novel fluorine-containing polymer having group reactive with acid and chemically amplifying type photo resist composition prepared by using same
JP3800538B2 (ja) 2001-02-09 2006-07-26 旭硝子株式会社 レジスト組成物
JP4117468B2 (ja) 2001-02-09 2008-07-16 旭硝子株式会社 含フッ素化合物、含フッ素ポリマー及びその製造方法

Also Published As

Publication number Publication date
TW200304047A (en) 2003-09-16
JP2003255540A (ja) 2003-09-10
DE60315085T2 (de) 2008-04-10
EP1343047A3 (de) 2004-01-02
CN100422853C (zh) 2008-10-01
TWI300882B (en) 2008-09-11
US20040013970A1 (en) 2004-01-22
JP4010160B2 (ja) 2007-11-21
CN1442753A (zh) 2003-09-17
US6815146B2 (en) 2004-11-09
EP1343047A2 (de) 2003-09-10
KR20040002451A (ko) 2004-01-07
ATE368241T1 (de) 2007-08-15
EP1343047B1 (de) 2007-07-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee