DE60301703D1 - Organische Speichervorrichtung - Google Patents

Organische Speichervorrichtung

Info

Publication number
DE60301703D1
DE60301703D1 DE60301703T DE60301703T DE60301703D1 DE 60301703 D1 DE60301703 D1 DE 60301703D1 DE 60301703 T DE60301703 T DE 60301703T DE 60301703 T DE60301703 T DE 60301703T DE 60301703 D1 DE60301703 D1 DE 60301703D1
Authority
DE
Germany
Prior art keywords
storage device
organic storage
organic
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60301703T
Other languages
English (en)
Other versions
DE60301703T2 (de
Inventor
Takahisa Tanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Application granted granted Critical
Publication of DE60301703D1 publication Critical patent/DE60301703D1/de
Publication of DE60301703T2 publication Critical patent/DE60301703T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE60301703T 2002-07-12 2003-07-07 Organische Speichervorrichtung Expired - Fee Related DE60301703T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002204102 2002-07-12
JP2002204102A JP2004047791A (ja) 2002-07-12 2002-07-12 有機薄膜スイッチングメモリ素子及びメモリ装置

Publications (2)

Publication Number Publication Date
DE60301703D1 true DE60301703D1 (de) 2005-11-03
DE60301703T2 DE60301703T2 (de) 2006-07-06

Family

ID=29728530

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60301703T Expired - Fee Related DE60301703T2 (de) 2002-07-12 2003-07-07 Organische Speichervorrichtung

Country Status (5)

Country Link
US (1) US6947321B2 (de)
EP (1) EP1381054B1 (de)
JP (1) JP2004047791A (de)
CN (1) CN1481034A (de)
DE (1) DE60301703T2 (de)

Families Citing this family (50)

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CA2500938A1 (en) * 2004-03-24 2005-09-24 Rohm And Haas Company Memory devices based on electric field programmable films
FR2864677A1 (fr) * 2004-05-12 2005-07-01 Thomson Licensing Sa Panneau electroluminescent organique a elements bi-stables formes par une seule couche organique
KR20070049139A (ko) * 2004-06-16 2007-05-10 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 전기 장치 및 그 제조 방법
EP1812893A4 (de) 2004-10-18 2008-12-10 Semiconductor Energy Lab Halbleiterbauelement und ansteuerverfahren dafür
US7795617B2 (en) * 2004-10-29 2010-09-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, IC card, IC tag, RFID, transponder, paper money, valuable securities, passport, electronic device, bag, and clothes
US9734901B2 (en) * 2004-10-29 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Display device with semiconductor memory cell
WO2006057417A1 (en) 2004-11-26 2006-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4912671B2 (ja) * 2004-11-26 2012-04-11 株式会社半導体エネルギー研究所 半導体装置
KR101169262B1 (ko) 2004-12-03 2012-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2006064859A1 (en) 2004-12-14 2006-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7443711B1 (en) 2004-12-16 2008-10-28 Hewlett-Packard Development Company, L.P. Non-volatile programmable impedance nanoscale devices
US7379317B2 (en) * 2004-12-23 2008-05-27 Spansion Llc Method of programming, reading and erasing memory-diode in a memory-diode array
WO2006085634A1 (en) * 2005-02-10 2006-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
US8242486B2 (en) 2005-02-10 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with liquid repellant layer
US7643327B2 (en) 2005-03-07 2010-01-05 Nxp B.V. Driving a memory matrix of resistance hysteresis elements
ATE474316T1 (de) 2005-03-09 2010-07-15 Nxp Bv Steuerung einer speichermatrix mit widerstandshysterese-elementen
JP4974555B2 (ja) * 2005-03-25 2012-07-11 株式会社半導体エネルギー研究所 記憶素子
KR101322747B1 (ko) 2005-03-25 2013-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 전자기기
TWI467702B (zh) 2005-03-28 2015-01-01 Semiconductor Energy Lab 記憶裝置和其製造方法
CN100456514C (zh) * 2005-04-18 2009-01-28 中国科学院长春应用化学研究所 单层有机存储器及其制造方法
CN101167189B (zh) 2005-04-27 2013-09-18 株式会社半导体能源研究所 半导体器件的制造方法
US7700984B2 (en) 2005-05-20 2010-04-20 Semiconductor Energy Laboratory Co., Ltd Semiconductor device including memory cell
US7791066B2 (en) 2005-05-20 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof and method for writing memory element
EP1760798B1 (de) 2005-08-31 2012-01-11 Semiconductor Energy Laboratory Co., Ltd. Halbleiteranordnung und deren Herstellungsverfahren
EP1760776B1 (de) 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Herstellungsverfahren für Halbleiterbauelement mit flexiblem Substrat
TWI267850B (en) * 2005-12-30 2006-12-01 Ind Tech Res Inst Bit cell of organic memory
US8222116B2 (en) 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8173519B2 (en) 2006-03-03 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
CN101401209B (zh) 2006-03-10 2011-05-25 株式会社半导体能源研究所 存储元件以及半导体器件
JP5201853B2 (ja) * 2006-03-10 2013-06-05 株式会社半導体エネルギー研究所 半導体装置
US7923719B2 (en) 2006-04-28 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device wherein wiring contact is made through an opening in an organic compound layer
EP1850378A3 (de) 2006-04-28 2013-08-07 Semiconductor Energy Laboratory Co., Ltd. Speichervorrichtung und Halbleiterbauelement
JP5171129B2 (ja) * 2006-06-28 2013-03-27 株式会社半導体エネルギー研究所 半導体装置
US7719001B2 (en) * 2006-06-28 2010-05-18 Semiconductor Energy Laboratory Co., Ltd Semiconductor device with metal oxides and an organic compound
EP1883109B1 (de) * 2006-07-28 2013-05-15 Semiconductor Energy Laboratory Co., Ltd. Speicherelement und Verfahren zu dessen Hertsellung
US7988057B2 (en) 2006-11-28 2011-08-02 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
US7875881B2 (en) * 2007-04-03 2011-01-25 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
DE102007028236A1 (de) * 2007-06-20 2009-01-02 Siemens Ag Halbleitendes Material und organische Gleichrichterdiode
US8320154B2 (en) * 2007-08-08 2012-11-27 National Institute For Materials Science Switching element and application of the same
US20110199356A1 (en) * 2007-12-06 2011-08-18 Pioneer Corporation Pixel circuit and display panel
US8019642B2 (en) * 2008-05-06 2011-09-13 Richrelevance, Inc. System and process for receiving boosting recommendations for use in providing personalized advertisements to retail customers
JP5717490B2 (ja) * 2011-03-24 2015-05-13 株式会社東芝 有機分子メモリ
DE102015000120A1 (de) * 2015-01-07 2016-07-07 Merck Patent Gmbh Elektronisches Bauelement
CN108780842A (zh) * 2016-03-23 2018-11-09 于利奇研究中心有限公司 用于制造存储器的方法、存储器以及该存储器的应用
KR102554183B1 (ko) 2016-07-29 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법, 표시 장치, 표시 모듈, 및 전자 기기
TWI753868B (zh) 2016-08-05 2022-02-01 日商半導體能源研究所股份有限公司 剝離方法、顯示裝置、顯示模組及電子裝置
TWI730017B (zh) 2016-08-09 2021-06-11 日商半導體能源研究所股份有限公司 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置
KR102425705B1 (ko) 2016-08-31 2022-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US10923350B2 (en) 2016-08-31 2021-02-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US10369664B2 (en) 2016-09-23 2019-08-06 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08116109A (ja) * 1994-10-14 1996-05-07 Matsushita Giken Kk 有機薄膜スイッチング・メモリー複合素子の製造方法および有機薄膜スイッチング・メモリー複合素子
NO972803D0 (no) * 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
NO973993L (no) 1997-09-01 1999-03-02 Opticom As Leseminne og leseminneinnretninger
US6646912B2 (en) * 2001-06-05 2003-11-11 Hewlett-Packard Development Company, Lp. Non-volatile memory
US6683322B2 (en) * 2002-03-01 2004-01-27 Hewlett-Packard Development Company, L.P. Flexible hybrid memory element

Also Published As

Publication number Publication date
DE60301703T2 (de) 2006-07-06
EP1381054B1 (de) 2005-09-28
EP1381054A1 (de) 2004-01-14
CN1481034A (zh) 2004-03-10
US6947321B2 (en) 2005-09-20
JP2004047791A (ja) 2004-02-12
US20040057323A1 (en) 2004-03-25

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Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee