DE60229577D1 - Verfahren zur Abstimmung einer akustischen Volumenwellenanordnung - Google Patents
Verfahren zur Abstimmung einer akustischen VolumenwellenanordnungInfo
- Publication number
- DE60229577D1 DE60229577D1 DE60229577T DE60229577T DE60229577D1 DE 60229577 D1 DE60229577 D1 DE 60229577D1 DE 60229577 T DE60229577 T DE 60229577T DE 60229577 T DE60229577 T DE 60229577T DE 60229577 D1 DE60229577 D1 DE 60229577D1
- Authority
- DE
- Germany
- Prior art keywords
- tuning
- acoustic wave
- wave device
- bulk acoustic
- bulk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0478—Resonance frequency in a process for mass production
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/784,634 US6456173B1 (en) | 2001-02-15 | 2001-02-15 | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60229577D1 true DE60229577D1 (de) | 2008-12-11 |
Family
ID=25133066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60229577T Expired - Lifetime DE60229577D1 (de) | 2001-02-15 | 2002-01-25 | Verfahren zur Abstimmung einer akustischen Volumenwellenanordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6456173B1 (de) |
EP (1) | EP1233510B1 (de) |
JP (1) | JP4130990B2 (de) |
DE (1) | DE60229577D1 (de) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3470678B2 (ja) * | 2000-03-31 | 2003-11-25 | 株式会社村田製作所 | 電子部品の周波数調整方法 |
KR100398363B1 (ko) * | 2000-12-05 | 2003-09-19 | 삼성전기주식회사 | Fbar 소자 및 그 제조방법 |
ATE323569T1 (de) * | 2001-03-22 | 2006-05-15 | Xsil Technology Ltd | Ein laserbearbeitungssystem und -verfahren |
US6480074B1 (en) * | 2001-04-27 | 2002-11-12 | Nokia Mobile Phones Ltd. | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity |
US6462460B1 (en) * | 2001-04-27 | 2002-10-08 | Nokia Corporation | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
KR20040005977A (ko) * | 2001-05-22 | 2004-01-16 | 인피네온 테크놀로지스 아게 | 미리 규정된 층 두께 프로파일을 가진 층의 제조 방법 |
TW591202B (en) * | 2001-10-26 | 2004-06-11 | Hermosa Thin Film Co Ltd | Dynamic film thickness control device/method and ITS coating method |
US6662419B2 (en) * | 2001-12-17 | 2003-12-16 | Intel Corporation | Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss |
US6949268B2 (en) * | 2002-06-28 | 2005-09-27 | Intel Corporation | Frequency uniformity of film bulk acoustic resonators |
US6787970B2 (en) * | 2003-01-29 | 2004-09-07 | Intel Corporation | Tuning of packaged film bulk acoustic resonator filters |
GB0308249D0 (en) * | 2003-04-10 | 2003-05-14 | Trikon Technologies Ltd | Method of depositing piezoelectric films |
US20040227578A1 (en) * | 2003-05-14 | 2004-11-18 | Miikka Hamalainen | Acoustic resonance-based frequency synthesizer using at least one bulk acoustic wave (BAW) or thin film bulk acoustic wave (FBAR) device |
US7114252B2 (en) * | 2004-06-17 | 2006-10-03 | Toko, Inc. | Large scale simultaneous circuit encapsulating apparatus |
US20060017352A1 (en) * | 2004-07-20 | 2006-01-26 | Aram Tanielian | Thin device and method of fabrication |
US20070139140A1 (en) * | 2005-12-20 | 2007-06-21 | Rao Valluri R | Frequency tuning of film bulk acoustic resonators (FBAR) |
JP5036215B2 (ja) * | 2006-05-19 | 2012-09-26 | 日本碍子株式会社 | 圧電薄膜共振子及び圧電薄膜共振子の共振周波数の調整方法 |
US7535324B2 (en) | 2007-06-15 | 2009-05-19 | Avago Technologies Wireless Ip, Pte. Ltd. | Piezoelectric resonator structure and method for manufacturing a coupled resonator device |
DE102008003820B4 (de) * | 2008-01-10 | 2013-01-17 | Epcos Ag | Frontendschaltung |
US20110121916A1 (en) * | 2009-11-24 | 2011-05-26 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Hybrid bulk acoustic wave resonator |
JP5617523B2 (ja) * | 2009-12-08 | 2014-11-05 | 株式会社村田製作所 | 積層型圧電薄膜フィルタの製造方法 |
FI20106059A (fi) * | 2010-10-14 | 2012-04-15 | Valtion Teknillinen | Toimintataajuuden vaihto LBAW-suodattimessa |
US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
US9166141B2 (en) * | 2011-09-09 | 2015-10-20 | Dvx, Llc | Process of manufacturing a piezopolymer transducer with matching layer |
CN109474254B (zh) * | 2018-10-31 | 2020-12-08 | 武汉衍熙微器件有限公司 | 一种声波器件及其制作方法 |
CN111058005A (zh) * | 2019-08-09 | 2020-04-24 | 河源市众拓光电科技有限公司 | 一种氮化物和金属薄膜沉积与修整设备及其应用 |
CN114244300A (zh) * | 2020-09-09 | 2022-03-25 | 诺思(天津)微***有限责任公司 | 滤波器组件及其制造方法、电子设备 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4454639A (en) * | 1982-06-03 | 1984-06-19 | Motorola, Inc. | Method for tuning piezoelectric resonators |
US4638536A (en) * | 1986-01-17 | 1987-01-27 | The United States Of America As Represented By The Secretary Of The Army | Method of making a resonator having a desired frequency from a quartz crystal resonator plate |
US4761298A (en) * | 1987-05-06 | 1988-08-02 | The United States Of America As Represented By The Secretary Of The Army | Method of precisely adjusting the frequency of a piezoelectric resonator |
US5643629A (en) * | 1991-05-20 | 1997-07-01 | Sauerland; Franz L. | Method for adjusting center frequency and bandwidth of monolithic filters by plating through a single-aperture mask on a single side of the filters electrode pattern to plate selected areas of the pattern |
FR2699765B1 (fr) * | 1992-12-22 | 1995-01-20 | Cepe | Procédé d'ajustage en fréquence d'un dispositif piézoélectrique et équipement pour la mise en Óoeuvre du procédé. |
US5587620A (en) * | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
US5662782A (en) * | 1994-05-26 | 1997-09-02 | Seiko Epson Corporation | Method and apparatus for adjusting a resonance frequency of piezoelectric elements |
JPH0818372A (ja) * | 1994-06-24 | 1996-01-19 | Seiko Instr Inc | 圧電素子の周波数調整装置及び圧電周波数調整方法 |
US5630949A (en) * | 1995-06-01 | 1997-05-20 | Tfr Technologies, Inc. | Method and apparatus for fabricating a piezoelectric resonator to a resonant frequency |
US6051907A (en) * | 1996-10-10 | 2000-04-18 | Nokia Mobile Phones Limited | Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS) |
US5780713A (en) * | 1996-11-19 | 1998-07-14 | Hewlett-Packard Company | Post-fabrication tuning of acoustic resonators |
US5894647A (en) * | 1997-06-30 | 1999-04-20 | Tfr Technologies, Inc. | Method for fabricating piezoelectric resonators and product |
US6081171A (en) | 1998-04-08 | 2000-06-27 | Nokia Mobile Phones Limited | Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response |
US6339276B1 (en) * | 1999-11-01 | 2002-01-15 | Agere Systems Guardian Corp. | Incremental tuning process for electrical resonators based on mechanical motion |
US6307447B1 (en) * | 1999-11-01 | 2001-10-23 | Agere Systems Guardian Corp. | Tuning mechanical resonators for electrical filter |
-
2001
- 2001-02-15 US US09/784,634 patent/US6456173B1/en not_active Expired - Fee Related
-
2002
- 2002-01-25 EP EP02250518A patent/EP1233510B1/de not_active Expired - Lifetime
- 2002-01-25 DE DE60229577T patent/DE60229577D1/de not_active Expired - Lifetime
- 2002-01-28 JP JP2002018553A patent/JP4130990B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1233510B1 (de) | 2008-10-29 |
JP4130990B2 (ja) | 2008-08-13 |
US20020109565A1 (en) | 2002-08-15 |
EP1233510A2 (de) | 2002-08-21 |
US6456173B1 (en) | 2002-09-24 |
EP1233510A3 (de) | 2003-04-02 |
JP2002311959A (ja) | 2002-10-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |