DE60229577D1 - Verfahren zur Abstimmung einer akustischen Volumenwellenanordnung - Google Patents

Verfahren zur Abstimmung einer akustischen Volumenwellenanordnung

Info

Publication number
DE60229577D1
DE60229577D1 DE60229577T DE60229577T DE60229577D1 DE 60229577 D1 DE60229577 D1 DE 60229577D1 DE 60229577 T DE60229577 T DE 60229577T DE 60229577 T DE60229577 T DE 60229577T DE 60229577 D1 DE60229577 D1 DE 60229577D1
Authority
DE
Germany
Prior art keywords
tuning
acoustic wave
wave device
bulk acoustic
bulk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60229577T
Other languages
English (en)
Inventor
Juha Ellae
Pasi Tikka
Jyrki Kaitila
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies Wireless IP Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avago Technologies Wireless IP Singapore Pte Ltd filed Critical Avago Technologies Wireless IP Singapore Pte Ltd
Application granted granted Critical
Publication of DE60229577D1 publication Critical patent/DE60229577D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0428—Modification of the thickness of an element of an electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0421—Modification of the thickness of an element
    • H03H2003/0435—Modification of the thickness of an element of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H03H2003/0414—Resonance frequency
    • H03H2003/0478—Resonance frequency in a process for mass production
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
DE60229577T 2001-02-15 2002-01-25 Verfahren zur Abstimmung einer akustischen Volumenwellenanordnung Expired - Lifetime DE60229577D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/784,634 US6456173B1 (en) 2001-02-15 2001-02-15 Method and system for wafer-level tuning of bulk acoustic wave resonators and filters

Publications (1)

Publication Number Publication Date
DE60229577D1 true DE60229577D1 (de) 2008-12-11

Family

ID=25133066

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60229577T Expired - Lifetime DE60229577D1 (de) 2001-02-15 2002-01-25 Verfahren zur Abstimmung einer akustischen Volumenwellenanordnung

Country Status (4)

Country Link
US (1) US6456173B1 (de)
EP (1) EP1233510B1 (de)
JP (1) JP4130990B2 (de)
DE (1) DE60229577D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3470678B2 (ja) * 2000-03-31 2003-11-25 株式会社村田製作所 電子部品の周波数調整方法
KR100398363B1 (ko) * 2000-12-05 2003-09-19 삼성전기주식회사 Ｆｂａｒ 소자 및 그 제조방법
ATE323569T1 (de) * 2001-03-22 2006-05-15 Xsil Technology Ltd Ein laserbearbeitungssystem und -verfahren
US6480074B1 (en) * 2001-04-27 2002-11-12 Nokia Mobile Phones Ltd. Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity
US6462460B1 (en) * 2001-04-27 2002-10-08 Nokia Corporation Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
KR20040005977A (ko) * 2001-05-22 2004-01-16 인피네온 테크놀로지스 아게 미리 규정된 층 두께 프로파일을 가진 층의 제조 방법
TW591202B (en) * 2001-10-26 2004-06-11 Hermosa Thin Film Co Ltd Dynamic film thickness control device/method and ITS coating method
US6662419B2 (en) * 2001-12-17 2003-12-16 Intel Corporation Method for fabricating film bulk acoustic resonators to achieve high-Q and low loss
US6949268B2 (en) * 2002-06-28 2005-09-27 Intel Corporation Frequency uniformity of film bulk acoustic resonators
US6787970B2 (en) * 2003-01-29 2004-09-07 Intel Corporation Tuning of packaged film bulk acoustic resonator filters
GB0308249D0 (en) * 2003-04-10 2003-05-14 Trikon Technologies Ltd Method of depositing piezoelectric films
US20040227578A1 (en) * 2003-05-14 2004-11-18 Miikka Hamalainen Acoustic resonance-based frequency synthesizer using at least one bulk acoustic wave (BAW) or thin film bulk acoustic wave (FBAR) device
US7114252B2 (en) * 2004-06-17 2006-10-03 Toko, Inc. Large scale simultaneous circuit encapsulating apparatus
US20060017352A1 (en) * 2004-07-20 2006-01-26 Aram Tanielian Thin device and method of fabrication
US20070139140A1 (en) * 2005-12-20 2007-06-21 Rao Valluri R Frequency tuning of film bulk acoustic resonators (FBAR)
JP5036215B2 (ja) * 2006-05-19 2012-09-26 日本碍子株式会社 圧電薄膜共振子及び圧電薄膜共振子の共振周波数の調整方法
US7535324B2 (en) 2007-06-15 2009-05-19 Avago Technologies Wireless Ip, Pte. Ltd. Piezoelectric resonator structure and method for manufacturing a coupled resonator device
DE102008003820B4 (de) * 2008-01-10 2013-01-17 Epcos Ag Frontendschaltung
US20110121916A1 (en) * 2009-11-24 2011-05-26 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Hybrid bulk acoustic wave resonator
JP5617523B2 (ja) * 2009-12-08 2014-11-05 株式会社村田製作所 積層型圧電薄膜フィルタの製造方法
FI20106059A (fi) * 2010-10-14 2012-04-15 Valtion Teknillinen Toimintataajuuden vaihto LBAW-suodattimessa
US8922302B2 (en) 2011-08-24 2014-12-30 Avago Technologies General Ip (Singapore) Pte. Ltd. Acoustic resonator formed on a pedestal
US9166141B2 (en) * 2011-09-09 2015-10-20 Dvx, Llc Process of manufacturing a piezopolymer transducer with matching layer
CN109474254B (zh) * 2018-10-31 2020-12-08 武汉衍熙微器件有限公司 一种声波器件及其制作方法
CN111058005A (zh) * 2019-08-09 2020-04-24 河源市众拓光电科技有限公司 一种氮化物和金属薄膜沉积与修整设备及其应用
CN114244300A (zh) * 2020-09-09 2022-03-25 诺思(天津)微***有限责任公司 滤波器组件及其制造方法、电子设备

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4454639A (en) * 1982-06-03 1984-06-19 Motorola, Inc. Method for tuning piezoelectric resonators
US4638536A (en) * 1986-01-17 1987-01-27 The United States Of America As Represented By The Secretary Of The Army Method of making a resonator having a desired frequency from a quartz crystal resonator plate
US4761298A (en) * 1987-05-06 1988-08-02 The United States Of America As Represented By The Secretary Of The Army Method of precisely adjusting the frequency of a piezoelectric resonator
US5643629A (en) * 1991-05-20 1997-07-01 Sauerland; Franz L. Method for adjusting center frequency and bandwidth of monolithic filters by plating through a single-aperture mask on a single side of the filters electrode pattern to plate selected areas of the pattern
FR2699765B1 (fr) * 1992-12-22 1995-01-20 Cepe Procédé d'ajustage en fréquence d'un dispositif piézoélectrique et équipement pour la mise en Óoeuvre du procédé.
US5587620A (en) * 1993-12-21 1996-12-24 Hewlett-Packard Company Tunable thin film acoustic resonators and method for making the same
US5662782A (en) * 1994-05-26 1997-09-02 Seiko Epson Corporation Method and apparatus for adjusting a resonance frequency of piezoelectric elements
JPH0818372A (ja) * 1994-06-24 1996-01-19 Seiko Instr Inc 圧電素子の周波数調整装置及び圧電周波数調整方法
US5630949A (en) * 1995-06-01 1997-05-20 Tfr Technologies, Inc. Method and apparatus for fabricating a piezoelectric resonator to a resonant frequency
US6051907A (en) * 1996-10-10 2000-04-18 Nokia Mobile Phones Limited Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS)
US5780713A (en) * 1996-11-19 1998-07-14 Hewlett-Packard Company Post-fabrication tuning of acoustic resonators
US5894647A (en) * 1997-06-30 1999-04-20 Tfr Technologies, Inc. Method for fabricating piezoelectric resonators and product
US6081171A (en) 1998-04-08 2000-06-27 Nokia Mobile Phones Limited Monolithic filters utilizing thin film bulk acoustic wave devices and minimum passive components for controlling the shape and width of a passband response
US6339276B1 (en) * 1999-11-01 2002-01-15 Agere Systems Guardian Corp. Incremental tuning process for electrical resonators based on mechanical motion
US6307447B1 (en) * 1999-11-01 2001-10-23 Agere Systems Guardian Corp. Tuning mechanical resonators for electrical filter

Also Published As

Publication number Publication date
EP1233510B1 (de) 2008-10-29
JP4130990B2 (ja) 2008-08-13
US20020109565A1 (en) 2002-08-15
EP1233510A2 (de) 2002-08-21
US6456173B1 (en) 2002-09-24
EP1233510A3 (de) 2003-04-02
JP2002311959A (ja) 2002-10-25

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Legal Events

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8364 No opposition during term of opposition