DE60217606D1 - Flachbildröntgenstrahlendetektor - Google Patents

Flachbildröntgenstrahlendetektor

Info

Publication number
DE60217606D1
DE60217606D1 DE60217606T DE60217606T DE60217606D1 DE 60217606 D1 DE60217606 D1 DE 60217606D1 DE 60217606 T DE60217606 T DE 60217606T DE 60217606 T DE60217606 T DE 60217606T DE 60217606 D1 DE60217606 D1 DE 60217606D1
Authority
DE
Germany
Prior art keywords
panel
flat
ray detector
ray
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60217606T
Other languages
English (en)
Other versions
DE60217606T2 (de
Inventor
Mitsushi Ikeda
Kouhei Suzuki
Akira Kinno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60217606D1 publication Critical patent/DE60217606D1/de
Application granted granted Critical
Publication of DE60217606T2 publication Critical patent/DE60217606T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14659—Direct radiation imagers structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe

Landscapes

  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
DE60217606T 2001-10-03 2002-10-03 Flachbildröntgenstrahlendetektor Expired - Lifetime DE60217606T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001307609 2001-10-03
JP2001307609 2001-10-03

Publications (2)

Publication Number Publication Date
DE60217606D1 true DE60217606D1 (de) 2007-03-08
DE60217606T2 DE60217606T2 (de) 2007-10-18

Family

ID=19127047

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60217606T Expired - Lifetime DE60217606T2 (de) 2001-10-03 2002-10-03 Flachbildröntgenstrahlendetektor

Country Status (6)

Country Link
US (1) US6849853B2 (de)
EP (1) EP1300885B1 (de)
KR (1) KR100490512B1 (de)
CN (1) CN1316634C (de)
CA (1) CA2406293A1 (de)
DE (1) DE60217606T2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6737653B2 (en) * 2001-03-12 2004-05-18 Lg. Philips Lcd Co., Ltd. X-ray detector and method of fabricating therefore
US7006598B2 (en) * 2002-08-09 2006-02-28 Canon Kabushiki Kaisha Imaging method and apparatus with exposure control
US7148487B2 (en) * 2002-08-27 2006-12-12 Canon Kabushiki Kaisha Image sensing apparatus and method using radiation
US7065175B2 (en) * 2003-03-03 2006-06-20 Varian Medical Systems Technologies, Inc. X-ray diffraction-based scanning system
JP5159065B2 (ja) 2005-08-31 2013-03-06 キヤノン株式会社 放射線検出装置、放射線撮像装置および放射線撮像システム
TWI291237B (en) * 2005-10-07 2007-12-11 Integrated Digital Technologie Photo detector array
US7623112B2 (en) * 2006-06-14 2009-11-24 Hannstar Display Corp. Image sensor array and liquid crystal display with sensor elements
US7812811B2 (en) * 2006-06-14 2010-10-12 Hannstar Display Corporation Driving circuit and driving method for input display
JP2008023220A (ja) * 2006-07-25 2008-02-07 Ge Medical Systems Global Technology Co Llc Ｘ線検出器
EP2223925A1 (de) * 2006-10-09 2010-09-01 Takeda Pharmaceutical Company Limited Kinase-Inhibitoren
KR100889746B1 (ko) 2007-03-09 2009-03-24 한국전자통신연구원 칼코젠 박막 트랜지스터 어레이를 포함하는 전자의료영상장치
US8525287B2 (en) 2007-04-18 2013-09-03 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US7923801B2 (en) * 2007-04-18 2011-04-12 Invisage Technologies, Inc. Materials, systems and methods for optoelectronic devices
US20100044676A1 (en) 2008-04-18 2010-02-25 Invisage Technologies, Inc. Photodetectors and Photovoltaics Based on Semiconductor Nanocrystals
KR101350795B1 (ko) * 2007-06-11 2014-01-10 삼성디스플레이 주식회사 엑스레이 검출기용 박막 트랜지스터 어레이
KR101218089B1 (ko) * 2007-12-07 2013-01-18 엘지디스플레이 주식회사 디지털 엑스레이 디텍터 및 그 제조방법
JP5155696B2 (ja) * 2008-03-05 2013-03-06 富士フイルム株式会社 撮像素子
US8138567B2 (en) * 2008-04-18 2012-03-20 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
US8203195B2 (en) 2008-04-18 2012-06-19 Invisage Technologies, Inc. Materials, fabrication equipment, and methods for stable, sensitive photodetectors and image sensors made therefrom
JP5489542B2 (ja) * 2008-07-01 2014-05-14 キヤノン株式会社 放射線検出装置及び放射線撮像システム
US8314421B2 (en) * 2009-06-01 2012-11-20 Qiu Cindy X Thin film transistors and circuits with metal oxynitride active channel layers
TWI424574B (zh) * 2009-07-28 2014-01-21 Prime View Int Co Ltd 數位ｘ光探測面板及其製作方法
CN102053252B (zh) * 2009-11-03 2012-11-21 上海天马微电子有限公司 平板x光传感器及其驱动方法
KR101645680B1 (ko) 2009-11-06 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011156507A1 (en) 2010-06-08 2011-12-15 Edward Hartley Sargent Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance
CN102374904B (zh) * 2010-08-23 2013-02-20 昆明物理研究所 一种非晶态碲镉汞线列探测器的信号处理电路
CN102157533B (zh) * 2011-01-18 2013-07-17 江苏康众数字医疗设备有限公司 具有存储电容结构的非晶硅图像传感器
JP5848047B2 (ja) 2011-07-07 2016-01-27 富士フイルム株式会社 放射線検出素子、放射線画像撮影装置、及び放射線画像撮影システム
JP5676405B2 (ja) * 2011-09-27 2015-02-25 富士フイルム株式会社 放射線画像撮影装置、放射線画像撮影システム、プログラムおよび放射線画像撮影方法
CN103296035B (zh) * 2012-02-29 2016-06-08 中国科学院微电子研究所 X射线平板探测器及其制造方法
KR101655004B1 (ko) * 2012-04-17 2016-09-06 도시바 덴시칸 디바이스 가부시키가이샤 Ｘ선 평판검출기의 제조방법 및 ｘ선 평판검출기용 ｔｆｔ 어레이 기판
CN103048675A (zh) * 2012-12-12 2013-04-17 上海奕瑞光电子科技有限公司 具有显示功能的便携式x光平板探测器
US9488891B2 (en) 2013-04-22 2016-11-08 National University Of Singapore Thin-surface liquid crystal based voltage sensor
CN104218045A (zh) * 2013-06-05 2014-12-17 朱兴华 碘化铅光电导层基数字x射线平板探测器
KR20230062676A (ko) 2014-03-13 2023-05-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
KR20150129505A (ko) 2014-05-12 2015-11-20 삼성전자주식회사 엑스선 검출 방법, 이를 포함한 엑스선 촬영 방법, 이를 적용한 엑스선 검출기
KR20160017490A (ko) 2014-08-06 2016-02-16 삼성전자주식회사 엑스선 검출기
KR20160038387A (ko) * 2014-09-30 2016-04-07 주식회사 레이언스 엑스선 디텍터 및 그 구동방법
CN105182396B (zh) 2015-06-29 2018-04-24 苏州瑞派宁科技有限公司 一种探测器信号读出的通道复用方法
US9653404B1 (en) * 2016-08-23 2017-05-16 United Microelectronics Corp. Overlay target for optically measuring overlay alignment of layers formed on semiconductor wafer
CN106847986A (zh) * 2017-02-23 2017-06-13 京东方科技集团股份有限公司 X射线平板探测器及其制备方法
CN109920809A (zh) * 2019-03-14 2019-06-21 上海交通大学 一种x射线平板探测器及其制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910901A (en) * 1988-09-19 1990-03-27 Boyar Florene E Sign post assembly
DE4227096A1 (de) * 1992-08-17 1994-02-24 Philips Patentverwaltung Röntgenbilddetektor
JPH07131030A (ja) * 1993-11-05 1995-05-19 Sony Corp 表示用薄膜半導体装置及びその製造方法
US6124606A (en) * 1995-06-06 2000-09-26 Ois Optical Imaging Systems, Inc. Method of making a large area imager with improved signal-to-noise ratio
JPH10197647A (ja) * 1997-01-14 1998-07-31 Toshiba Corp Ｘ線画像検出器
JP3462041B2 (ja) * 1997-06-19 2003-11-05 株式会社東芝 Ｘ線診断装置
JP3839941B2 (ja) * 1997-11-28 2006-11-01 キヤノン株式会社 放射線検出装置及び放射線検出方法
JPH11307756A (ja) * 1998-02-20 1999-11-05 Canon Inc 光電変換装置および放射線読取装置
US6163030A (en) * 1998-03-16 2000-12-19 Thermo Trex Corporation MOS imaging device
JPH11331703A (ja) * 1998-03-20 1999-11-30 Toshiba Corp 撮像装置
JP3421580B2 (ja) * 1998-06-22 2003-06-30 株式会社東芝 撮像装置
CA2242743C (en) * 1998-07-08 2002-12-17 Ftni Inc. Direct conversion digital x-ray detector with inherent high voltage protection for static and dynamic imaging
JP4066531B2 (ja) 1998-08-27 2008-03-26 株式会社島津製作所 放射線検出器
JP3489782B2 (ja) * 1999-02-24 2004-01-26 株式会社東芝 Ｘ線撮像装置
JP3838806B2 (ja) * 1999-03-26 2006-10-25 株式会社東芝 信号増倍ｘ線撮像装置
KR100299537B1 (ko) * 1999-08-31 2001-11-01 남상희 엑스-선 검출용 박막트랜지스터 기판 제조방법
US6507026B2 (en) * 2000-01-12 2003-01-14 Kabushiki Kaisha Toshiba Planar X-ray detector
JP3838849B2 (ja) * 2000-03-28 2006-10-25 株式会社東芝 Ｘ線平面検出器

Also Published As

Publication number Publication date
KR100490512B1 (ko) 2005-05-19
CA2406293A1 (en) 2003-04-03
CN1438713A (zh) 2003-08-27
EP1300885B1 (de) 2007-01-17
US20030063706A1 (en) 2003-04-03
KR20030029463A (ko) 2003-04-14
US6849853B2 (en) 2005-02-01
EP1300885A2 (de) 2003-04-09
CN1316634C (zh) 2007-05-16
EP1300885A3 (de) 2003-10-22
DE60217606T2 (de) 2007-10-18

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)