DE60216039D1 - Piezoelektrischer Einkristall mit kontrollierter Domänenstruktur - Google Patents

Piezoelektrischer Einkristall mit kontrollierter Domänenstruktur

Info

Publication number
DE60216039D1
DE60216039D1 DE60216039T DE60216039T DE60216039D1 DE 60216039 D1 DE60216039 D1 DE 60216039D1 DE 60216039 T DE60216039 T DE 60216039T DE 60216039 T DE60216039 T DE 60216039T DE 60216039 D1 DE60216039 D1 DE 60216039D1
Authority
DE
Germany
Prior art keywords
single crystal
domain structure
piezoelectric single
controlled domain
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60216039T
Other languages
English (en)
Other versions
DE60216039T2 (de
Inventor
Shizuoka Ogawa
Mitsuyoshi Matsushita
Yoshihito Tachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Mineral Co Ltd
Original Assignee
Kawatetsu Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kawatetsu Mining Co Ltd filed Critical Kawatetsu Mining Co Ltd
Application granted granted Critical
Publication of DE60216039D1 publication Critical patent/DE60216039D1/de
Publication of DE60216039T2 publication Critical patent/DE60216039T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H10N30/045—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning by polarising

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE2002616039 2002-03-25 2002-09-25 Piezoelektrischer Einkristall mit kontrollierter Domänenstruktur Expired - Lifetime DE60216039T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002083702 2002-03-25
JP2002083702A JP3987744B2 (ja) 2002-03-25 2002-03-25 ドメイン制御圧電単結晶素子

Publications (2)

Publication Number Publication Date
DE60216039D1 true DE60216039D1 (de) 2006-12-28
DE60216039T2 DE60216039T2 (de) 2007-05-24

Family

ID=27800407

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2002616039 Expired - Lifetime DE60216039T2 (de) 2002-03-25 2002-09-25 Piezoelektrischer Einkristall mit kontrollierter Domänenstruktur
DE60228508T Expired - Lifetime DE60228508D1 (de) 2002-03-25 2002-09-25 Piezoelektrischer Einkristall mit Domänenkontrolle und dessen Herstellungsverfahren

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60228508T Expired - Lifetime DE60228508D1 (de) 2002-03-25 2002-09-25 Piezoelektrischer Einkristall mit Domänenkontrolle und dessen Herstellungsverfahren

Country Status (7)

Country Link
US (1) US6756238B2 (de)
EP (2) EP1349220B1 (de)
JP (1) JP3987744B2 (de)
KR (2) KR100921301B1 (de)
CN (1) CN100385701C (de)
DE (2) DE60216039T2 (de)
SG (1) SG115497A1 (de)

Families Citing this family (30)

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WO2003065468A2 (de) * 2002-02-01 2003-08-07 Siemens Aktiengesellschaft Verfahren zum vorbehandeln einer piezoelektrischen keramik und verfahren zum justieren eines einspritzventils
KR100628812B1 (ko) * 2003-05-21 2006-09-26 제이에프이 미네랄 가부시키가이샤 압전단결정 소자와 그 제조방법
JP4508725B2 (ja) * 2003-05-21 2010-07-21 Ｊｆｅミネラル株式会社 圧電単結晶素子とその製造方法
JP4373777B2 (ja) * 2003-12-26 2009-11-25 敏夫 小川 圧電デバイス
JP4568529B2 (ja) * 2004-04-30 2010-10-27 Ｊｆｅミネラル株式会社 圧電単結晶素子
JP4613032B2 (ja) 2004-05-06 2011-01-12 Ｊｆｅミネラル株式会社 圧電単結晶素子およびその製造方法
US7402938B2 (en) * 2004-10-29 2008-07-22 Jfe Mineral Co., Ltd. Piezoelectric single crystal device
JP5168439B2 (ja) * 2005-07-29 2013-03-21 セイコーエプソン株式会社 圧電素子、圧電アクチュエーター、インクジェット式記録ヘッド、およびインクジェットプリンター
WO2007023985A1 (ja) 2005-08-23 2007-03-01 Canon Kabushiki Kaisha 圧電体素子、それを用いた液体吐出ヘッド、および液体吐出装置
DE102005043037B4 (de) * 2005-09-09 2009-04-09 Siemens Ag Vorrichtung mit piezoakustischem Resonatorelement, Verfahren zu dessen Herstellung und Verfahren zur Ausgabe eines Signals in Abhängigkeit einer Resonanzfrequenz
JP5307986B2 (ja) * 2007-05-07 2013-10-02 富士フイルム株式会社 圧電素子とその製造方法、及び液体吐出装置
JP5065763B2 (ja) * 2007-05-18 2012-11-07 Ｊｆｅミネラル株式会社 圧電単結晶素子
US8818193B2 (en) * 2009-09-29 2014-08-26 Finisar Corporation Multichannel tunable optical dispersion compensator
US8907546B2 (en) 2010-08-10 2014-12-09 Wesley S. Hackenberger Temperature and field stable relaxor-PT piezoelectric single crystals
US8987976B2 (en) * 2011-09-23 2015-03-24 Qualcomm Incorporated Piezoelectric resonator having combined thickness and width vibrational modes
KR101305271B1 (ko) * 2012-03-22 2013-09-06 한국기계연구원 자기전기 복합체
JP6073600B2 (ja) * 2012-08-28 2017-02-01 東芝メディカルシステムズ株式会社 超音波プローブおよび圧電振動子
JP6091951B2 (ja) * 2013-03-25 2017-03-08 東芝メディカルシステムズ株式会社 圧電振動子、超音波プローブ、圧電振動子製造方法および超音波プローブ製造方法
CN103346253B (zh) * 2013-06-08 2015-01-21 西安交通大学 铁电单晶/环氧2-2结构及应力板加固的2-2结构复合材料
JP6398060B2 (ja) * 2013-12-27 2018-10-03 アドバンストマテリアルテクノロジーズ株式会社 熱ポーリング方法、圧電体膜の製造方法、及び圧電特性の検査方法
CN105256376B (zh) * 2015-11-18 2017-12-22 中国科学技术大学 一种控制铁电单晶电致形变取向的方法
CN107512910B (zh) * 2016-06-16 2019-11-26 中国科学院福建物质结构研究所 一种三元弛豫铁电压电材料铌镥酸铅-铌镍酸铅-钛酸铅及其制备方法和应用
US11039814B2 (en) 2016-12-04 2021-06-22 Exo Imaging, Inc. Imaging devices having piezoelectric transducers
CN109037432B (zh) * 2018-07-24 2022-05-13 歌尔微电子股份有限公司 压电元件变温极化装置及方法
WO2020068473A1 (en) 2018-09-25 2020-04-02 Exo Imaging, Inc. Imaging devices with selectively alterable characteristics
JP7406876B2 (ja) * 2018-10-17 2023-12-28 キヤノン株式会社 圧電トランス、および電子機器
JP7369504B2 (ja) * 2019-09-27 2023-10-26 テイカ株式会社 圧電単結晶素子の製造方法、超音波送受信素子の製造方法および超音波プローブの製造方法
CA3135281C (en) 2020-03-05 2022-03-01 Exo Imaging, Inc. Ultrasonic imaging device with programmable anatomy and flow imaging
CN111740005B (zh) * 2020-06-17 2022-05-24 上海新硅聚合半导体有限公司 一种压电薄膜高温极化方法
US11545615B2 (en) * 2020-09-09 2023-01-03 Baker Hughes Oilfield Operations Llc Method for manufacturing piezoelectric instrumentation devices with 3D structures using additive manufacturing

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3258111B2 (ja) 1992-02-12 2002-02-18 株式会社東芝 超音波送受信素子、超音波プローブおよび超音波治療装置用送波器
US5295487A (en) * 1992-02-12 1994-03-22 Kabushiki Kaisha Toshiba Ultrasonic probe
JPH07240546A (ja) * 1994-02-28 1995-09-12 Toyota Central Res & Dev Lab Inc 大変位用圧電セラミックスおよび圧電セラミックスの分極処理方法
JP2001106569A (ja) * 1995-10-09 2001-04-17 Ngk Insulators Ltd 電界誘起歪み材料
JP2001509312A (ja) * 1997-01-28 2001-07-10 ザ ペンステート リサーチファウンデーション 超音波変換器のためのリラクサー強誘電体単結晶
US6231779B1 (en) * 1997-10-20 2001-05-15 Massachusetts Institute Of Technology Piezoelectric actuators and method of making same
JP3345580B2 (ja) * 1998-03-05 2002-11-18 株式会社東芝 超音波プローブの製造方法
US6491889B2 (en) * 2000-04-03 2002-12-10 Ibule Photonics Co., Ltd. Ferroelectric single crystal wafer and process for the preparation thereof
KR100384442B1 (ko) * 2000-04-03 2003-05-22 (주)아이블포토닉스 신규의 복합 금속 화합물 및 이의 제조방법

Also Published As

Publication number Publication date
EP1655789B1 (de) 2008-08-20
DE60216039T2 (de) 2007-05-24
EP1349220A2 (de) 2003-10-01
EP1349220B1 (de) 2006-11-15
EP1655789A1 (de) 2006-05-10
US20030178914A1 (en) 2003-09-25
KR100947156B1 (ko) 2010-03-12
JP2003282986A (ja) 2003-10-03
CN100385701C (zh) 2008-04-30
DE60228508D1 (de) 2008-10-02
SG115497A1 (en) 2005-10-28
KR100921301B1 (ko) 2009-10-09
EP1349220A3 (de) 2005-04-13
US6756238B2 (en) 2004-06-29
CN1447455A (zh) 2003-10-08
KR20090081354A (ko) 2009-07-28
JP3987744B2 (ja) 2007-10-10
KR20030077924A (ko) 2003-10-04

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