DE60205439D1 - Optischer Verstärker - Google Patents

Optischer Verstärker

Info

Publication number
DE60205439D1
DE60205439D1 DE60205439T DE60205439T DE60205439D1 DE 60205439 D1 DE60205439 D1 DE 60205439D1 DE 60205439 T DE60205439 T DE 60205439T DE 60205439 T DE60205439 T DE 60205439T DE 60205439 D1 DE60205439 D1 DE 60205439D1
Authority
DE
Germany
Prior art keywords
optical amplifier
amplifier
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60205439T
Other languages
English (en)
Other versions
DE60205439T2 (de
Inventor
Yasuo Shibata
Nobuhiro Kikuchi
Hiromi Oohashi
Yuichi Thomori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE60205439D1 publication Critical patent/DE60205439D1/de
Application granted granted Critical
Publication of DE60205439T2 publication Critical patent/DE60205439T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/212—Mach-Zehnder type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/217—Multimode interference type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/70—Semiconductor optical amplifier [SOA] used in a device covered by G02F
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5063—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 operating above threshold
    • H01S5/5072—Gain clamping, i.e. stabilisation by saturation using a further mode or frequency

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Lasers (AREA)
DE60205439T 2001-10-05 2002-10-07 Optischer Verstärker Expired - Lifetime DE60205439T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001310427 2001-10-05
JP2001310427 2001-10-05
JP2002266513A JP3950028B2 (ja) 2001-10-05 2002-09-12 光増幅器
JP2002266513 2002-09-12

Publications (2)

Publication Number Publication Date
DE60205439D1 true DE60205439D1 (de) 2005-09-15
DE60205439T2 DE60205439T2 (de) 2006-05-24

Family

ID=26623785

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60205439T Expired - Lifetime DE60205439T2 (de) 2001-10-05 2002-10-07 Optischer Verstärker

Country Status (4)

Country Link
US (3) US7088501B2 (de)
EP (1) EP1300918B1 (de)
JP (1) JP3950028B2 (de)
DE (1) DE60205439T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3950028B2 (ja) * 2001-10-05 2007-07-25 日本電信電話株式会社 光増幅器
DE60328480D1 (de) * 2002-05-09 2009-09-03 Fujitsu Ltd Optischer verstärker
JP4359035B2 (ja) * 2002-11-21 2009-11-04 富士通株式会社 光中継器
US7158291B2 (en) * 2003-01-30 2007-01-02 Quantum Photonics, Inc. Low polarization gain dependent semiconductor optical amplifier with variable residual cladding layer thickness
JP3985159B2 (ja) * 2003-03-14 2007-10-03 日本電気株式会社 利得クランプ型半導体光増幅器
US7050222B2 (en) * 2003-05-23 2006-05-23 Covega, Inc. Methods and devices for high power, depolarized superluminescent diodes
KR100584412B1 (ko) * 2003-10-10 2006-05-26 삼성전자주식회사 이득 고정된 반도체 광증폭기
JP4582289B2 (ja) * 2003-12-26 2010-11-17 日本電気株式会社 半導体レーザー
KR100679244B1 (ko) * 2004-12-02 2007-02-05 한국전자통신연구원 신호 재생기
US7286731B2 (en) * 2004-04-29 2007-10-23 Lucent Technologies Inc. Monolithically integrated optical coupler with substantially no splitting loss
US6992813B1 (en) 2004-12-28 2006-01-31 Fujitsu Limited Optical amplifying device
KR100759805B1 (ko) * 2005-12-07 2007-09-20 한국전자통신연구원 광증폭 듀플렉서
JP2012198292A (ja) * 2011-03-18 2012-10-18 Fujitsu Ltd 光ハイブリッド回路及び光受信機
US20140153870A1 (en) * 2012-12-05 2014-06-05 MiMetrix Design Group, L.L.C. Monolithic splitter assembly
GB2522252B (en) 2014-01-20 2016-04-20 Rockley Photonics Ltd Tunable SOI laser
US9762334B2 (en) * 2015-12-31 2017-09-12 Alcatel-Lucent Usa Inc. Photonic integrated circuit using chip integration
US11699892B2 (en) 2016-02-19 2023-07-11 Rockley Photonics Limited Discrete wavelength tunable laser
GB2547467A (en) 2016-02-19 2017-08-23 Rockley Photonics Ltd Tunable laser
US10811848B2 (en) 2017-06-14 2020-10-20 Rockley Photonics Limited Broadband arbitrary wavelength multichannel laser source
US11567206B1 (en) * 2019-05-17 2023-01-31 Insight Lidar, Inc. Chip-scale coherent lidar utilizing quantum dots
US20230420912A1 (en) * 2020-11-20 2023-12-28 Nippon Telegraph And Telephone Corporation Optical Transmitter

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3433248A1 (de) * 1984-09-11 1986-03-20 Merck Patent Gmbh, 6100 Darmstadt Elektrooptisches anzeigeelement
US5478811A (en) * 1991-08-22 1995-12-26 Merrell Dow Pharmaceuticals Inc. Orally-active elastase inhibitors
WO1996013084A1 (de) 1994-10-21 1996-05-02 Besse Pierre Andre Verfahren zur bekämpfung der sättigung und der nichtlinearen effekte in optischen halbleiterverstärkern
EP0717482A1 (de) * 1994-12-14 1996-06-19 AT&T Corp. Halbleiterinterferometer zur optischen Wellenlängenumwandlung
EP0804751B1 (de) * 1995-01-19 1999-08-04 BRITISH TELECOMMUNICATIONS public limited company Optischer schalter
DE59610596D1 (de) * 1995-02-01 2003-08-14 Juerg Leuthold Kompakte optisch-optische schalter und wellenlängen-konverter mittels multimode-interferenz moden-konvertern
US5647032A (en) * 1995-08-24 1997-07-08 Kowa Company, Ltd. Interferometers for measuring coherence length and high-speed switching of laser light
US5629992A (en) * 1995-09-14 1997-05-13 Bell Communications Research, Inc. Passband flattening of integrated optical filters
US5999284A (en) * 1997-06-05 1999-12-07 Northern Telecom Limited Optical detection and logic devices with latching function
EP0901245B1 (de) * 1997-08-27 2006-05-17 Interuniversitair Micro-Elektronica Centrum Vzw Optische Entscheidungsschaltung und dessen Verwendung
JP2000012978A (ja) 1998-06-24 2000-01-14 Nippon Telegr & Teleph Corp <Ntt> 光増幅装置
FR2785730B1 (fr) 1998-11-05 2001-10-12 Cit Alcatel Amplificateur optique a semi-conducteur a gain stabilise reglable et systeme optique utilisant un tel amplificateur
US6545759B1 (en) * 1999-11-30 2003-04-08 Nile F. Hartman Transverse integrated optic interferometer
FR2810176B1 (fr) * 2000-06-09 2002-10-11 Cit Alcatel Dispositif de regeneration de signaux optiques
US6766072B2 (en) * 2000-07-28 2004-07-20 Pirelli Cavi E Sistemi S.P.A. Optical threshold and comparison devices and methods
US6778278B2 (en) * 2000-08-03 2004-08-17 Peleton Photonic Systems Inc. Temperature insensitive Mach-Zehnder interferometers and devices
US6753996B2 (en) * 2000-09-21 2004-06-22 Nippon Telegraph & Telephone Corporation Light-controlled light modulator
US6657780B2 (en) * 2001-02-20 2003-12-02 University Of Maryland Baltimore County Widely tunable and integrated optical system and method
US6522462B2 (en) * 2001-06-29 2003-02-18 Super Light Wave Corp. All optical logic using cross-phase modulation amplifiers and mach-zehnder interferometers with phase-shift devices
JP3950028B2 (ja) * 2001-10-05 2007-07-25 日本電信電話株式会社 光増幅器
DE60212320T8 (de) * 2002-01-10 2007-10-18 Nippon Telegraph And Telephone Corp. Optischer Impulsfolgengenerator
JP3912661B2 (ja) * 2002-02-05 2007-05-09 日本電信電話株式会社 光信号分離装置
US7167620B2 (en) * 2003-07-16 2007-01-23 Doron Handelman Devices and methods for all-optical processing and storage

Also Published As

Publication number Publication date
US20030067678A1 (en) 2003-04-10
US7221500B2 (en) 2007-05-22
JP3950028B2 (ja) 2007-07-25
EP1300918A3 (de) 2004-01-07
JP2003179289A (ja) 2003-06-27
DE60205439T2 (de) 2006-05-24
EP1300918B1 (de) 2005-08-10
US20060232851A1 (en) 2006-10-19
US20060268399A1 (en) 2006-11-30
US7088501B2 (en) 2006-08-08
EP1300918A2 (de) 2003-04-09
US7262905B2 (en) 2007-08-28

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