DE602008003676D1 - Verwendung von lacunarspinellen mit tetraedrischen aggregaten eines übergangselements des am4x8-typs in einem mehrmals beschreibbaren nichtflüchtigen speicher für elektronische daten und entsprechendes material - Google Patents

Verwendung von lacunarspinellen mit tetraedrischen aggregaten eines übergangselements des am4x8-typs in einem mehrmals beschreibbaren nichtflüchtigen speicher für elektronische daten und entsprechendes material

Info

Publication number
DE602008003676D1
DE602008003676D1 DE602008003676T DE602008003676T DE602008003676D1 DE 602008003676 D1 DE602008003676 D1 DE 602008003676D1 DE 602008003676 T DE602008003676 T DE 602008003676T DE 602008003676 T DE602008003676 T DE 602008003676T DE 602008003676 D1 DE602008003676 D1 DE 602008003676D1
Authority
DE
Germany
Prior art keywords
am4x8
lacunar
aggregates
volatile memory
electronic data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008003676T
Other languages
English (en)
Inventor
Laurent Cario
Benoit Corraze
Etienne Janod
George Christian Vaju
Marie-Paule Besland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universite de Nantes
Original Assignee
Universite de Nantes
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universite de Nantes filed Critical Universite de Nantes
Publication of DE602008003676D1 publication Critical patent/DE602008003676D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822—Sulfides, e.g. CuS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
DE602008003676T 2007-03-14 2008-03-12 Verwendung von lacunarspinellen mit tetraedrischen aggregaten eines übergangselements des am4x8-typs in einem mehrmals beschreibbaren nichtflüchtigen speicher für elektronische daten und entsprechendes material Active DE602008003676D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0701819A FR2913806B1 (fr) 2007-03-14 2007-03-14 Utilisation de spinelles lacunaires a clusters tetraedriques d'element de transition du type am4x8 dans une memoire non volatile reinscriptible de donnees electroniques,et materiau correspondant.
PCT/EP2008/052968 WO2008113734A1 (fr) 2007-03-14 2008-03-12 Utilisation de spinelles lacunaires a agregats tetraedriques d'element de transition du type am4x8 dans une memoire non volatile reinscriptible de donnees electroniques, et materiau correspondant.

Publications (1)

Publication Number Publication Date
DE602008003676D1 true DE602008003676D1 (de) 2011-01-05

Family

ID=38561171

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008003676T Active DE602008003676D1 (de) 2007-03-14 2008-03-12 Verwendung von lacunarspinellen mit tetraedrischen aggregaten eines übergangselements des am4x8-typs in einem mehrmals beschreibbaren nichtflüchtigen speicher für elektronische daten und entsprechendes material

Country Status (8)

Country Link
US (1) US8305794B2 (de)
EP (1) EP2122704B1 (de)
JP (1) JP5265582B2 (de)
KR (1) KR101416725B1 (de)
AT (1) ATE489735T1 (de)
DE (1) DE602008003676D1 (de)
FR (1) FR2913806B1 (de)
WO (1) WO2008113734A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2943340B1 (fr) * 2009-03-18 2011-04-22 Centre Nat Rech Scient Procede de preparation d'une couche mince de thiospinelles
US10840259B2 (en) 2018-08-13 2020-11-17 Sandisk Technologies Llc Three-dimensional memory device including liner free molybdenum word lines and methods of making the same
RU2745973C1 (ru) * 2020-10-07 2021-04-05 Федеральное государственное бюджетное учреждение науки Институт физики твердого тела Российской академии наук (ИФТТ РАН) Способ синтеза шпинели GaNb4Se8

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2624846B1 (fr) * 1987-12-16 1990-05-04 Atochem Composition a base d'un oxyde de structure spinelle, son application comme catalyseur et procede pour l'obtenir
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
JP2008251107A (ja) 2007-03-30 2008-10-16 Toshiba Corp 情報記録再生装置
TW200839956A (en) 2007-03-30 2008-10-01 Toshiba Kk Information recording/reproducing apparatus
JP2008251108A (ja) 2007-03-30 2008-10-16 Toshiba Corp 情報記録再生装置
FR2943340B1 (fr) * 2009-03-18 2011-04-22 Centre Nat Rech Scient Procede de preparation d'une couche mince de thiospinelles

Also Published As

Publication number Publication date
EP2122704B1 (de) 2010-11-24
KR101416725B1 (ko) 2014-07-09
FR2913806A1 (fr) 2008-09-19
JP5265582B2 (ja) 2013-08-14
JP2010521069A (ja) 2010-06-17
EP2122704A1 (de) 2009-11-25
WO2008113734A1 (fr) 2008-09-25
KR20100014796A (ko) 2010-02-11
ATE489735T1 (de) 2010-12-15
FR2913806B1 (fr) 2009-05-29
US8305794B2 (en) 2012-11-06
US20100133494A1 (en) 2010-06-03

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