DE602007003666D1 - Speicherelement und Speicher - Google Patents

Speicherelement und Speicher

Info

Publication number
DE602007003666D1
DE602007003666D1 DE602007003666T DE602007003666T DE602007003666D1 DE 602007003666 D1 DE602007003666 D1 DE 602007003666D1 DE 602007003666 T DE602007003666 T DE 602007003666T DE 602007003666 T DE602007003666 T DE 602007003666T DE 602007003666 D1 DE602007003666 D1 DE 602007003666D1
Authority
DE
Germany
Prior art keywords
memory
memory element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007003666T
Other languages
English (en)
Inventor
Minoru Ikarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE602007003666D1 publication Critical patent/DE602007003666D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
DE602007003666T 2006-11-02 2007-10-31 Speicherelement und Speicher Active DE602007003666D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006299525A JP2008117930A (ja) 2006-11-02 2006-11-02 記憶素子、メモリ

Publications (1)

Publication Number Publication Date
DE602007003666D1 true DE602007003666D1 (de) 2010-01-21

Family

ID=39093004

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007003666T Active DE602007003666D1 (de) 2006-11-02 2007-10-31 Speicherelement und Speicher

Country Status (7)

Country Link
US (1) US7529122B2 (de)
EP (1) EP1918937B1 (de)
JP (1) JP2008117930A (de)
KR (1) KR20080040566A (de)
CN (1) CN100550458C (de)
DE (1) DE602007003666D1 (de)
TW (1) TWI352352B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4380707B2 (ja) 2007-01-19 2009-12-09 ソニー株式会社 記憶素子
US7999336B2 (en) 2008-04-24 2011-08-16 Seagate Technology Llc ST-RAM magnetic element configurations to reduce switching current
US7826256B2 (en) * 2008-09-29 2010-11-02 Seagate Technology Llc STRAM with compensation element
US7940551B2 (en) 2008-09-29 2011-05-10 Seagate Technology, Llc STRAM with electronically reflective insulative spacer
US8587993B2 (en) 2009-03-02 2013-11-19 Qualcomm Incorporated Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM)
JP2011008850A (ja) * 2009-06-24 2011-01-13 Sony Corp メモリ及び情報処理方法
JP5786341B2 (ja) * 2010-09-06 2015-09-30 ソニー株式会社 記憶素子、メモリ装置
JP2012160681A (ja) * 2011-02-03 2012-08-23 Sony Corp 記憶素子、メモリ装置
JP2019057626A (ja) * 2017-09-21 2019-04-11 Tdk株式会社 スピン流磁化反転素子、スピン軌道トルク型磁気抵抗効果素子及び磁気メモリ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5695864A (en) * 1995-09-28 1997-12-09 International Business Machines Corporation Electronic device using magnetic components
US5920500A (en) * 1996-08-23 1999-07-06 Motorola, Inc. Magnetic random access memory having stacked memory cells and fabrication method therefor
DE10113853B4 (de) * 2000-03-23 2009-08-06 Sharp K.K. Magnetspeicherelement und Magnetspeicher
JP2003017782A (ja) 2001-07-04 2003-01-17 Rikogaku Shinkokai キャリヤスピン注入磁化反転型磁気抵抗効果膜と該膜を用いた不揮発性メモリー素子及び該素子を用いたメモリー装置
US6545906B1 (en) * 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
JP2005277147A (ja) 2004-03-25 2005-10-06 Tohoku Univ 磁気記録素子の記録方法及び磁気記録素子アレイ
US7241631B2 (en) * 2004-12-29 2007-07-10 Grandis, Inc. MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

Also Published As

Publication number Publication date
JP2008117930A (ja) 2008-05-22
EP1918937B1 (de) 2009-12-09
US20080112215A1 (en) 2008-05-15
CN100550458C (zh) 2009-10-14
CN101174670A (zh) 2008-05-07
KR20080040566A (ko) 2008-05-08
EP1918937A1 (de) 2008-05-07
US7529122B2 (en) 2009-05-05
TWI352352B (en) 2011-11-11
TW200834575A (en) 2008-08-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition