DE602006019670D1 - Halbleitervorrichtung und deren Herstellung - Google Patents

Halbleitervorrichtung und deren Herstellung

Info

Publication number
DE602006019670D1
DE602006019670D1 DE602006019670T DE602006019670T DE602006019670D1 DE 602006019670 D1 DE602006019670 D1 DE 602006019670D1 DE 602006019670 T DE602006019670 T DE 602006019670T DE 602006019670 T DE602006019670 T DE 602006019670T DE 602006019670 D1 DE602006019670 D1 DE 602006019670D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006019670T
Other languages
English (en)
Inventor
Kazumasa Nomoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE602006019670D1 publication Critical patent/DE602006019670D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1258Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by using a substrate provided with a shape pattern, e.g. grooves, banks, resist pattern
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60Forming conductive regions or layers, e.g. electrodes
    • H10K71/611Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/821Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0104Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/013Inkjet printing, e.g. for printing insulating material or resist

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE602006019670T 2005-07-28 2006-06-28 Halbleitervorrichtung und deren Herstellung Active DE602006019670D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005218224A JP4506605B2 (ja) 2005-07-28 2005-07-28 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
DE602006019670D1 true DE602006019670D1 (de) 2011-03-03

Family

ID=36940212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006019670T Active DE602006019670D1 (de) 2005-07-28 2006-06-28 Halbleitervorrichtung und deren Herstellung

Country Status (7)

Country Link
US (2) US7718465B2 (de)
EP (1) EP1748502B1 (de)
JP (1) JP4506605B2 (de)
KR (1) KR20070014971A (de)
CN (2) CN101577312B (de)
DE (1) DE602006019670D1 (de)
TW (1) TW200707744A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7888671B2 (en) 2006-12-18 2011-02-15 Panasonic Corporation Semiconductor device
JP2008251888A (ja) * 2007-03-30 2008-10-16 Sony Corp パターン形成方法および電子素子の製造方法
US8057656B2 (en) * 2008-01-30 2011-11-15 Hewlett-Packard Development Company, Lp Crossover
JP5459570B2 (ja) * 2008-02-05 2014-04-02 セイコーエプソン株式会社 半導体装置の製造方法、電気光学装置の製造方法、および電子機器の製造方法
JP4434312B2 (ja) * 2008-02-12 2010-03-17 コニカミノルタホールディングス株式会社 有機半導体層の成膜方法、および有機薄膜トランジスタの製造方法
WO2010061035A1 (en) * 2008-11-27 2010-06-03 Upm-Kymmene Corporation Embossing of electronic thin-film components
JP5739257B2 (ja) * 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US20140087090A1 (en) * 2011-05-20 2014-03-27 Takashi Miyagawa Method for manufacturing pattern structure
CN106876277B (zh) * 2017-02-20 2020-03-17 武汉华星光电技术有限公司 薄膜晶体管的制备方法、显示面板的制备方法
CN109860207B (zh) * 2019-02-27 2022-07-19 合肥鑫晟光电科技有限公司 一种阵列基板、其制作方法、显示面板及显示装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
GB0024294D0 (en) * 2000-10-04 2000-11-15 Univ Cambridge Tech Solid state embossing of polymer devices
GB0207134D0 (en) * 2002-03-27 2002-05-08 Cambridge Display Tech Ltd Method of preparation of organic optoelectronic and electronic devices and devices thereby obtained
US6946677B2 (en) * 2002-06-14 2005-09-20 Nokia Corporation Pre-patterned substrate for organic thin film transistor structures and circuits and related method for making same
JP4314557B2 (ja) * 2002-09-12 2009-08-19 セイコーエプソン株式会社 成膜方法、光学素子、半導体素子および電子機器、電気光学装置の製造方法、カラーフィルターの製造方法
JP4356309B2 (ja) * 2002-12-03 2009-11-04 セイコーエプソン株式会社 トランジスタ、集積回路、電気光学装置、電子機器
GB0229191D0 (en) * 2002-12-14 2003-01-22 Plastic Logic Ltd Embossing of polymer devices
JP2004241397A (ja) * 2003-01-23 2004-08-26 Dainippon Printing Co Ltd 薄膜トランジスタおよびその製造方法
FI20030919A (fi) * 2003-06-19 2004-12-20 Avantone Oy Menetelmä ja laitteisto elektronisen ohutkalvokomponentin valmistamiseksi sekä elektroninen ohutkalvokomponentti
GB0324189D0 (en) * 2003-10-16 2003-11-19 Univ Cambridge Tech Short-channel transistors

Also Published As

Publication number Publication date
JP2007035981A (ja) 2007-02-08
US20090152540A1 (en) 2009-06-18
US7718465B2 (en) 2010-05-18
TW200707744A (en) 2007-02-16
CN101577312B (zh) 2011-09-28
JP4506605B2 (ja) 2010-07-21
TWI364841B (de) 2012-05-21
KR20070014971A (ko) 2007-02-01
US20070026554A1 (en) 2007-02-01
EP1748502B1 (de) 2011-01-19
CN1905131A (zh) 2007-01-31
EP1748502A1 (de) 2007-01-31
CN101577312A (zh) 2009-11-11

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