DE602006016029D1 - Ferroelektrisches Aufzeichnungsmedium und Schreibverfahren dafür - Google Patents

Ferroelektrisches Aufzeichnungsmedium und Schreibverfahren dafür

Info

Publication number
DE602006016029D1
DE602006016029D1 DE602006016029T DE602006016029T DE602006016029D1 DE 602006016029 D1 DE602006016029 D1 DE 602006016029D1 DE 602006016029 T DE602006016029 T DE 602006016029T DE 602006016029 T DE602006016029 T DE 602006016029T DE 602006016029 D1 DE602006016029 D1 DE 602006016029D1
Authority
DE
Germany
Prior art keywords
recording medium
method therefor
writing method
ferroelectric recording
ferroelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006016029T
Other languages
English (en)
Inventor
Hyoung-Soo Ko
Ju-Hwan Jung
Eun-Sik Kim
Sung-Dong Kim
Hong-Sik Park
Chul-Min Park
Seung-Bum Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602006016029D1 publication Critical patent/DE602006016029D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/02—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using ferroelectric record carriers; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure
    • Y10S977/947—Information storage or retrieval using nanostructure with scanning probe instrument

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
DE602006016029T 2005-02-07 2006-02-03 Ferroelektrisches Aufzeichnungsmedium und Schreibverfahren dafür Active DE602006016029D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050011410A KR100695139B1 (ko) 2005-02-07 2005-02-07 강유전체 기록 매체 및 그의 기록 방법

Publications (1)

Publication Number Publication Date
DE602006016029D1 true DE602006016029D1 (de) 2010-09-23

Family

ID=36202223

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006016029T Active DE602006016029D1 (de) 2005-02-07 2006-02-03 Ferroelektrisches Aufzeichnungsmedium und Schreibverfahren dafür

Country Status (6)

Country Link
US (2) US7820311B2 (de)
EP (1) EP1688940B1 (de)
JP (1) JP4276237B2 (de)
KR (1) KR100695139B1 (de)
CN (1) CN100505090C (de)
DE (1) DE602006016029D1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100695139B1 (ko) * 2005-02-07 2007-03-14 삼성전자주식회사 강유전체 기록 매체 및 그의 기록 방법
KR100773556B1 (ko) * 2006-08-02 2007-11-07 삼성전자주식회사 전계 재생/기록 헤드와 그의 제조방법 및 전계 재생/기록헤드를 포함한 정보 재생/기록 장치
JP2008059740A (ja) * 2006-08-24 2008-03-13 Rohm & Haas Co 情報の書き込みおよび読み込みのための装置および方法
KR101255051B1 (ko) * 2007-09-07 2013-04-16 시게이트 테크놀로지 엘엘씨 수퍼 트랙을 가지는 비트 패턴 매체, 재생 헤드 및 수퍼트랙을 가지는 비트패턴 매체에 정보를 기록 재생하는 하드디스크 드라이브
CN101882463B (zh) * 2009-05-08 2013-02-27 复旦大学 一种多位铁电存储器及其电压施加方法
US8000215B2 (en) * 2009-08-12 2011-08-16 Seagate Technology Llc Voltage pattern for ferroelectric recording head
KR20160148719A (ko) * 2014-08-19 2016-12-26 사빅 글로벌 테크놀러지스 비.브이. 멀티레벨 작동을 하는 비휘발성 광전지 메모리 셀
KR20190055661A (ko) * 2017-11-15 2019-05-23 에스케이하이닉스 주식회사 강유전 소자의 구동 방법
CN112928116B (zh) * 2019-12-06 2024-03-22 财团法人工业技术研究院 铁电记忆体
US11087791B1 (en) * 2020-05-05 2021-08-10 Western Digital Technologies, Inc. Data storage device with voltage-assisted magnetic recording (VAMR) for high density magnetic recording

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US5070385A (en) * 1989-10-20 1991-12-03 Radiant Technologies Ferroelectric non-volatile variable resistive element
JPH06334140A (ja) * 1992-12-16 1994-12-02 Ricoh Co Ltd 強誘電体材料および該材料を用いた半導体メモリ、光記録媒体ならびに微小変位制御素子
JP3505758B2 (ja) * 1993-12-28 2004-03-15 ローム株式会社 不揮発性半導体メモリ
US5541870A (en) * 1994-10-28 1996-07-30 Symetrix Corporation Ferroelectric memory and non-volatile memory cell for same
US6194751B1 (en) * 1994-11-15 2001-02-27 Radiant Technologies, Inc Ferroelectric based memory devices utilizing low Curie point ferroelectrics and encapsulation
JPH09134552A (ja) 1995-09-06 1997-05-20 Hitachi Ltd トラッキング方法と記憶装置
JP3193302B2 (ja) * 1996-06-26 2001-07-30 ティーディーケイ株式会社 膜構造体、電子デバイス、記録媒体および強誘電体薄膜の製造方法
FR2757992B1 (fr) * 1996-12-26 1999-01-29 Commissariat Energie Atomique Support d'enregistrement d'informations, dispositif de lecture de ce support et procedes de mise en oeuvre de ce dispositif
JP3787640B2 (ja) * 1997-07-17 2006-06-21 カシオ計算機株式会社 メッセージデータ出力装置およびそのプログラム記録媒体
FR2786005B1 (fr) * 1998-11-17 2002-04-12 Commissariat Energie Atomique Procede d'ecriture et de lecture d'un support d'informations comprenant un materiau avec une succession de zones presentant respectivement un premier et un deuxieme etats physiques
JP2001256774A (ja) * 2000-03-09 2001-09-21 Matsushita Electric Ind Co Ltd 半導体記憶装置のデータ読み出し方法、データ書き込み方法および駆動方法
JP3851799B2 (ja) 2000-09-28 2006-11-29 株式会社東芝 磁気記録装置の設計方法
KR100487920B1 (ko) * 2002-09-06 2005-05-06 주식회사 하이닉스반도체 불휘발성 강유전체 메모리 장치
US6762481B2 (en) * 2002-10-08 2004-07-13 The University Of Houston System Electrically programmable nonvolatile variable capacitor
JP3958196B2 (ja) * 2002-11-28 2007-08-15 康雄 長 誘電体記録再生ヘッド及び誘電体記録再生装置
US7026676B2 (en) * 2004-06-29 2006-04-11 Seagate Technology Llc Memory array having a layer with electrical conductivity anisotropy
KR100590564B1 (ko) * 2004-10-29 2006-06-19 삼성전자주식회사 이방성 전도층을 구비하는 강유전체 기록 매체, 이를구비하는 기록 장치 및 그 기록 방법
KR100682895B1 (ko) * 2004-11-06 2007-02-15 삼성전자주식회사 다양한 저항 상태를 지닌 저항체를 이용한 비휘발성메모리 소자 및 그 작동 방법
KR100695139B1 (ko) * 2005-02-07 2007-03-14 삼성전자주식회사 강유전체 기록 매체 및 그의 기록 방법

Also Published As

Publication number Publication date
JP4276237B2 (ja) 2009-06-10
EP1688940A2 (de) 2006-08-09
EP1688940A3 (de) 2008-09-24
US7820311B2 (en) 2010-10-26
CN100505090C (zh) 2009-06-24
JP2006221784A (ja) 2006-08-24
KR20060090487A (ko) 2006-08-11
EP1688940B1 (de) 2010-08-11
KR100695139B1 (ko) 2007-03-14
US20080225678A1 (en) 2008-09-18
US7889628B2 (en) 2011-02-15
CN1822220A (zh) 2006-08-23
US20060175644A1 (en) 2006-08-10

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