DE602006016008D1 - Prozess zum herstellen eines photovoltaischen dünnfilmbauelements - Google Patents

Prozess zum herstellen eines photovoltaischen dünnfilmbauelements

Info

Publication number
DE602006016008D1
DE602006016008D1 DE602006016008T DE602006016008T DE602006016008D1 DE 602006016008 D1 DE602006016008 D1 DE 602006016008D1 DE 602006016008 T DE602006016008 T DE 602006016008T DE 602006016008 T DE602006016008 T DE 602006016008T DE 602006016008 D1 DE602006016008 D1 DE 602006016008D1
Authority
DE
Germany
Prior art keywords
manufacturing
thin film
film component
photovoltaic thin
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006016008T
Other languages
English (en)
Inventor
Thomas Niesen
Volker Probst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Publication of DE602006016008D1 publication Critical patent/DE602006016008D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE602006016008T 2005-12-21 2006-12-19 Prozess zum herstellen eines photovoltaischen dünnfilmbauelements Active DE602006016008D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP05112605 2005-12-21
PCT/EP2006/069879 WO2007071663A1 (en) 2005-12-21 2006-12-19 Process of making a thin-film photovoltaic device and thin-film photovoltaic device

Publications (1)

Publication Number Publication Date
DE602006016008D1 true DE602006016008D1 (de) 2010-09-16

Family

ID=36282763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006016008T Active DE602006016008D1 (de) 2005-12-21 2006-12-19 Prozess zum herstellen eines photovoltaischen dünnfilmbauelements

Country Status (6)

Country Link
US (1) US8673678B2 (de)
EP (2) EP1964180B1 (de)
CN (1) CN101346823B (de)
DE (1) DE602006016008D1 (de)
ES (1) ES2391255T3 (de)
WO (1) WO2007071663A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
US20090260678A1 (en) * 2008-04-16 2009-10-22 Agc Flat Glass Europe S.A. Glass substrate bearing an electrode
JP5581527B2 (ja) * 2008-09-30 2014-09-03 エルジー・ケム・リミテッド 透明導電膜、その製造方法、透明電極及び太陽電池
US8168463B2 (en) * 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US8202407B1 (en) * 2009-01-06 2012-06-19 Arthur Don Harmala Apparatus and method for manufacturing polycarbonate solar cells
US7785921B1 (en) * 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
KR20110012550A (ko) * 2009-07-30 2011-02-09 삼성전자주식회사 박막 태양 전지의 제조방법 및 제조장치
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
US8709335B1 (en) 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by cold spraying
US8709548B1 (en) 2009-10-20 2014-04-29 Hanergy Holding Group Ltd. Method of making a CIG target by spray forming
US20110207301A1 (en) * 2010-02-19 2011-08-25 Kormanyos Kenneth R Atmospheric pressure chemical vapor deposition with saturation control
US20110232758A1 (en) 2010-03-25 2011-09-29 Rohm And Haas Electronic Materials Llc Thin film photovoltaic cell
WO2012021593A1 (en) 2010-08-13 2012-02-16 First Solar, Inc. Photovoltaic device with oxide layer
US8628997B2 (en) * 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
US8906732B2 (en) * 2010-10-01 2014-12-09 Stion Corporation Method and device for cadmium-free solar cells
KR20120118092A (ko) * 2011-04-18 2012-10-26 삼성디스플레이 주식회사 태양 전지
CN102231402B (zh) * 2011-07-14 2013-05-08 四川大学 一种ii-vi族稀释氧化物半导体薄膜太阳电池
KR101210046B1 (ko) * 2011-10-17 2012-12-07 엘지이노텍 주식회사 태양전지 및 이의 제조방법
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
EP3719853A1 (de) * 2017-02-27 2020-10-07 First Solar, Inc Dünnschichtstapel-photovoltaikvorrichtung enthaltend cadmium und tellur mit gruppe-v-dotierung

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216411A (en) 1978-08-08 1980-08-05 Wylain, Inc. Underwater light assembly with low-water cut-off
JPH0682625B2 (ja) * 1985-06-04 1994-10-19 シーメンス ソーラー インダストリーズ，エル．ピー． 酸化亜鉛膜の蒸着方法
US4612411A (en) 1985-06-04 1986-09-16 Atlantic Richfield Company Thin film solar cell with ZnO window layer
EP0604801B1 (de) 1992-12-30 1999-10-06 Siemens Solar Industries International, Inc. Verfahren zum Herstellen einer Dünnschicht-Heteroübergang-Sonnenzelle
US5474939A (en) * 1992-12-30 1995-12-12 Siemens Solar Industries International Method of making thin film heterojunction solar cell
DE4447866B4 (de) 1994-11-16 2005-05-25 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Verfahren zur Herstellung einer Verbindungshalbleiter-Dünnschichtsolarzelle
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
WO1997036334A1 (de) 1996-03-22 1997-10-02 Siemens Aktiengesellschaft Klima- und korrosionsstabiler schichtaufbau
US20040131792A1 (en) * 2001-03-22 2004-07-08 Bhattacharya Raghu N. Electroless deposition of cu-in-ga-se film
WO2002091483A2 (en) * 2001-05-08 2002-11-14 Bp Corporation North America Inc. Improved photovoltaic device
CN1151560C (zh) * 2002-03-08 2004-05-26 清华大学 一种铜铟镓硒薄膜太阳能电池及其制备方法

Also Published As

Publication number Publication date
EP1964180B1 (de) 2010-08-04
CN101346823A (zh) 2009-01-14
US8673678B2 (en) 2014-03-18
EP2239782A1 (de) 2010-10-13
EP2239782B1 (de) 2012-08-22
WO2007071663A1 (en) 2007-06-28
EP1964180A1 (de) 2008-09-03
US20090223556A1 (en) 2009-09-10
ES2391255T3 (es) 2012-11-22
CN101346823B (zh) 2010-06-23

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