DE602006012220D1 - Dünnfilm-bandpassfilter mit induktivität-kondensator-resonatoren - Google Patents

Dünnfilm-bandpassfilter mit induktivität-kondensator-resonatoren

Info

Publication number
DE602006012220D1
DE602006012220D1 DE602006012220T DE602006012220T DE602006012220D1 DE 602006012220 D1 DE602006012220 D1 DE 602006012220D1 DE 602006012220 T DE602006012220 T DE 602006012220T DE 602006012220 T DE602006012220 T DE 602006012220T DE 602006012220 D1 DE602006012220 D1 DE 602006012220D1
Authority
DE
Germany
Prior art keywords
resonators
inductivity
condenser
thin film
pass filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006012220T
Other languages
English (en)
Inventor
Richard Chen Qiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Publication of DE602006012220D1 publication Critical patent/DE602006012220D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205—Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1708—Comprising bridging elements, i.e. elements in a series path without own reference to ground and spanning branching nodes of another series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/175—Series LC in series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1791—Combined LC in shunt or branch path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/40—Structural association with built-in electric component, e.g. fuse
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Filters And Equalizers (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
DE602006012220T 2005-12-06 2006-11-29 Dünnfilm-bandpassfilter mit induktivität-kondensator-resonatoren Active DE602006012220D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US74804505P 2005-12-06 2005-12-06
US11/408,412 US7667557B2 (en) 2005-12-06 2006-04-21 Thin-film bandpass filter using inductor-capacitor resonators
PCT/US2006/045876 WO2007067412A1 (en) 2005-12-06 2006-11-29 Thin-film bandpass filter using inductor-capacitor resonators

Publications (1)

Publication Number Publication Date
DE602006012220D1 true DE602006012220D1 (de) 2010-03-25

Family

ID=37814103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006012220T Active DE602006012220D1 (de) 2005-12-06 2006-11-29 Dünnfilm-bandpassfilter mit induktivität-kondensator-resonatoren

Country Status (9)

Country Link
US (1) US7667557B2 (de)
EP (1) EP1961116B1 (de)
JP (1) JP5009931B2 (de)
KR (1) KR101345887B1 (de)
CN (1) CN101326713B (de)
AT (1) ATE457549T1 (de)
DE (1) DE602006012220D1 (de)
TW (1) TWI389451B (de)
WO (1) WO2007067412A1 (de)

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DE102008017967B4 (de) * 2008-04-08 2015-03-12 Airbus Defence and Space GmbH Resonanzfilter mit geringem Verlust
TWI378597B (en) * 2008-07-09 2012-12-01 Advanced Semiconductor Eng Band pass filter
EP2396884B1 (de) * 2009-02-12 2016-06-22 Thomson Licensing Filterungsnetz in der hr-si-siliziumtechnologie
JP4968305B2 (ja) * 2009-09-29 2012-07-04 Ｔｄｋ株式会社 積層型バンドパスフィルタ
JP2011077841A (ja) * 2009-09-30 2011-04-14 Renesas Electronics Corp 電子装置
JP5339092B2 (ja) * 2010-07-22 2013-11-13 Ｔｄｋ株式会社 バンドパスフィルタモジュール及びモジュール基板
US9124235B2 (en) * 2011-09-30 2015-09-01 Verizon Patent And Licensing Inc. Media content management and presentation systems and methods
KR101365368B1 (ko) * 2012-12-26 2014-02-24 삼성전기주식회사 공통모드필터 및 이의 제조방법
DE102013013464B4 (de) 2013-08-14 2021-06-24 Gottfried Wilhelm Leibniz Universität Hannover Elektronisches Bauteil
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EP3683232A1 (de) 2013-09-13 2020-07-22 F. Hoffmann-La Roche AG Verfahren und zusammensetzungen mit gereinigten rekombinanten polypeptiden
TWI552174B (zh) * 2014-01-02 2016-10-01 矽品精密工業股份有限公司 線路結構
US9634823B1 (en) 2015-10-13 2017-04-25 Kumu Networks, Inc. Systems for integrated self-interference cancellation
US9800236B2 (en) 2015-11-10 2017-10-24 Infineon Technologies Ag Integrated analog delay line of a pulse-width modulator
US10069662B2 (en) 2015-11-10 2018-09-04 Infineon Technologies Ag Mixed analog-digital pulse-width modulator
EP3391459B1 (de) * 2015-12-16 2022-06-15 Kumu Networks, Inc. Zeitverzögerungsfilter
WO2017189592A1 (en) 2016-04-25 2017-11-02 Kumu Networks, Inc. Integrated delay modules
US10454444B2 (en) 2016-04-25 2019-10-22 Kumu Networks, Inc. Integrated delay modules
US10141908B2 (en) * 2016-08-18 2018-11-27 Qualcomm Incorporated Multi-density MIM capacitor for improved passive on glass (POG) multiplexer performance
US10103774B1 (en) 2017-03-27 2018-10-16 Kumu Networks, Inc. Systems and methods for intelligently-tuned digital self-interference cancellation
CN110100290A (zh) * 2017-11-28 2019-08-06 野田士克林股份有限公司 Lc谐振元件和谐振元件阵列
JP2019102733A (ja) 2017-12-06 2019-06-24 凸版印刷株式会社 配線基板、半導体装置、及び配線基板の製造方法
JP2019106429A (ja) * 2017-12-11 2019-06-27 凸版印刷株式会社 ガラス配線基板、その製造方法及び半導体装置
KR102454368B1 (ko) 2018-01-22 2022-10-14 삼성전자주식회사 메모리 패키지 및 반도체 패키지
KR20210152573A (ko) 2018-02-27 2021-12-15 쿠무 네트웍스, 아이엔씨. 구성가능한 하이브리드 자기-간섭 소거를 위한 시스템 및 방법
US11069476B2 (en) 2018-10-08 2021-07-20 Vayyar Imaging Ltd. Self-contained device with planar overlapping coils
JP7232083B2 (ja) 2019-03-05 2023-03-02 太陽誘電株式会社 フィルタ
US10868661B2 (en) 2019-03-14 2020-12-15 Kumu Networks, Inc. Systems and methods for efficiently-transformed digital self-interference cancellation
CN113315486B (zh) * 2021-05-17 2022-06-21 无锡豪帮高科股份有限公司 面向5g通信的高阻带抑制低通滤波器
TWI806615B (zh) * 2022-05-19 2023-06-21 國立清華大學 濾波器及其製造方法

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Also Published As

Publication number Publication date
KR20080091442A (ko) 2008-10-13
JP2009518953A (ja) 2009-05-07
EP1961116B1 (de) 2010-02-10
CN101326713A (zh) 2008-12-17
US7667557B2 (en) 2010-02-23
CN101326713B (zh) 2013-03-27
JP5009931B2 (ja) 2012-08-29
TWI389451B (zh) 2013-03-11
KR101345887B1 (ko) 2013-12-30
TW200731664A (en) 2007-08-16
ATE457549T1 (de) 2010-02-15
US20070126529A1 (en) 2007-06-07
EP1961116A1 (de) 2008-08-27
WO2007067412A1 (en) 2007-06-14

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