DE602006006625D1 - Positive lichtempfindliche isolierende Harzzubereitung, ausgehärtetes Produkt davon, sowie elektronisches Bauteil - Google Patents

Positive lichtempfindliche isolierende Harzzubereitung, ausgehärtetes Produkt davon, sowie elektronisches Bauteil

Info

Publication number
DE602006006625D1
DE602006006625D1 DE602006006625T DE602006006625T DE602006006625D1 DE 602006006625 D1 DE602006006625 D1 DE 602006006625D1 DE 602006006625 T DE602006006625 T DE 602006006625T DE 602006006625 T DE602006006625 T DE 602006006625T DE 602006006625 D1 DE602006006625 D1 DE 602006006625D1
Authority
DE
Germany
Prior art keywords
resin composition
electronic component
cured product
insulating resin
positive photosensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006006625T
Other languages
English (en)
Inventor
Hirofumi Sasaki
Atsushi Ito
Hirofumi Goto
Yuichi Hashiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JSR Corp filed Critical JSR Corp
Publication of DE602006006625D1 publication Critical patent/DE602006006625D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions
    • H05K3/287—Photosensitive compositions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
    • H05K3/4676—Single layer compositions

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
DE602006006625T 2005-08-19 2006-08-18 Positive lichtempfindliche isolierende Harzzubereitung, ausgehärtetes Produkt davon, sowie elektronisches Bauteil Active DE602006006625D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005238853 2005-08-19

Publications (1)

Publication Number Publication Date
DE602006006625D1 true DE602006006625D1 (de) 2009-06-18

Family

ID=37432011

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006006625T Active DE602006006625D1 (de) 2005-08-19 2006-08-18 Positive lichtempfindliche isolierende Harzzubereitung, ausgehärtetes Produkt davon, sowie elektronisches Bauteil

Country Status (4)

Country Link
US (1) US7332254B2 (de)
EP (1) EP1755365B1 (de)
KR (1) KR101290041B1 (de)
DE (1) DE602006006625D1 (de)

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EP1965256B1 (de) * 2005-11-30 2014-04-30 Sumitomo Bakelite Co., Ltd. Positive lichtempfindliche harzzusammensetzung und verwendung derselbigen zur herstellung einer halbleiteranordnung und eines displays
JP5048754B2 (ja) * 2006-04-13 2012-10-17 コーロン インダストリーズ インク ポジティブ型フォトレジスト用組成物およびこれから製造されたポジティブ型フォトレジストフィルム
JP2008077057A (ja) 2006-08-21 2008-04-03 Jsr Corp 感光性絶縁樹脂組成物及びその硬化物並びにそれを備える電子部品
WO2008126818A1 (ja) * 2007-04-10 2008-10-23 Nippon Kayaku Kabushiki Kaisha 感光性樹脂組成物
KR100919715B1 (ko) 2007-11-30 2009-10-06 제일모직주식회사 컬러 필터용 감광성 수지 조성물 및 이로부터 제조된 컬러필터
KR100918691B1 (ko) * 2007-12-07 2009-09-22 제일모직주식회사 패드 보호막 형성용 감광성 수지 조성물, 및 이를 이용하는이미지 센서의 제조 방법
GB2471247B (en) * 2008-03-31 2013-04-10 Sanyo Chemical Ind Ltd Toner binder and toner
KR20100006952A (ko) * 2008-07-11 2010-01-22 삼성전자주식회사 포토레지스트 조성물, 이를 이용한 금속 패턴의 형성 방법및 표시 기판의 제조 방법
KR101107003B1 (ko) 2009-04-09 2012-01-25 제일모직주식회사 이미지 센서 및 그 제조 방법
KR101201831B1 (ko) 2009-07-09 2012-11-15 제일모직주식회사 유-무기 하이브리드　조성물 및 이미지 센서
JP5526693B2 (ja) * 2009-10-09 2014-06-18 日油株式会社 感光性樹脂組成物およびその用途
WO2011089877A1 (ja) * 2010-01-21 2011-07-28 日立化成デュポンマイクロシステムズ株式会社 ポジ型感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
EP2618216B1 (de) * 2010-09-16 2019-05-29 Hitachi Chemical Co., Ltd. Positive lichtempfindliche harzzusammensetzung, verfahren zur herstellung einer lackstruktur und elektronische komponente
EP2447773B1 (de) * 2010-11-02 2013-07-10 Fujifilm Corporation Musterherstellungsverfahren, Verfahren zur Herstellung einer MEMS-Struktur, Verwendung eines gehärteten Films aus lichtempfindlicher Harzzusammensetzung als Opferschicht oder als Komponente einer MEMS-Struktur
JP5831388B2 (ja) 2011-10-25 2015-12-09 信越化学工業株式会社 変性ノボラック型フェノール樹脂の製造方法
JP5621755B2 (ja) * 2011-11-17 2014-11-12 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
WO2013118680A1 (ja) * 2012-02-07 2013-08-15 日立化成株式会社 感光性樹脂組成物、パターン硬化膜の製造方法及び電子部品
KR20140015869A (ko) * 2012-07-26 2014-02-07 삼성디스플레이 주식회사 포토 레지스트 조성물 및 이를 이용한 박막 트랜지스터 표시판 제조 방법
TWI490653B (zh) * 2013-09-10 2015-07-01 Chi Mei Corp 正型感光性樹脂組成物及其圖案形成方法
US9921513B2 (en) * 2014-12-09 2018-03-20 Canon Kabushiki Kaisha Charging member, process cartridge, and electrophotographic apparatus
EP3538617B1 (de) * 2016-11-10 2021-09-29 Agfa-Gevaert Nv Lötmaskentintenstrahltinten zur herstellung von leiterplatten
JP6702251B2 (ja) * 2017-04-17 2020-05-27 信越化学工業株式会社 ポジ型レジストフィルム積層体及びパターン形成方法

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JP3064579B2 (ja) 1991-01-17 2000-07-12 株式会社東芝 パターン形成方法
US5362597A (en) * 1991-05-30 1994-11-08 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition comprising an epoxy-containing alkali-soluble resin and a naphthoquinone diazide sulfonic acid ester
JPH075302A (ja) * 1993-06-15 1995-01-10 Tosoh Corp マイクロ集光レンズ形成用感光性組成物
JPH1098267A (ja) * 1996-09-20 1998-04-14 Hitachi Chem Co Ltd 感光性絶縁材料及びこれを用いた配線板の製造方法
JPH10319592A (ja) 1997-05-16 1998-12-04 Jsr Corp 感放射線性樹脂組成物
JP3449931B2 (ja) 1997-11-18 2003-09-22 住友ベークライト株式会社 ポジ型感光性樹脂組成物
JP2000098601A (ja) 1998-09-25 2000-04-07 Ube Ind Ltd ポジ型感光性ポリアミド酸組成物およびパタ−ン形成方法
JP4029556B2 (ja) * 2000-11-01 2008-01-09 Ｊｓｒ株式会社 感光性絶縁樹脂組成物およびその硬化物
TWI228639B (en) 2000-11-15 2005-03-01 Vantico Ag Positive type photosensitive epoxy resin composition and printed circuit board using the same
KR100895364B1 (ko) * 2002-01-23 2009-04-29 제이에스알 가부시끼가이샤 포지티브형 감광성 절연 수지 조성물 및 그의 경화물
CN100336137C (zh) * 2002-01-28 2007-09-05 捷时雅株式会社 形成电介体的光敏组合物以及利用该组合物的电介体
JP4106972B2 (ja) * 2002-06-06 2008-06-25 Ｊｓｒ株式会社 感光性誘電体形成用組成物、誘電体および電子部品
JP2004206058A (ja) 2002-10-31 2004-07-22 Sumitomo Chem Co Ltd ポジ型感光性組成物
JP2004191816A (ja) 2002-12-13 2004-07-08 Sumitomo Chem Co Ltd 感光性組成物
JP2004258070A (ja) 2003-02-24 2004-09-16 Sumitomo Chem Co Ltd ポジ型感光性組成物
US20060246371A1 (en) * 2003-07-09 2006-11-02 Akira Nishikawa Photosensitive fluororesin composition, cured film obtained from the composition, and method of forming pattern
JP4131864B2 (ja) * 2003-11-25 2008-08-13 東京応化工業株式会社 化学増幅型ポジ型感光性熱硬化性樹脂組成物、硬化物の形成方法、及び機能素子の製造方法

Also Published As

Publication number Publication date
KR101290041B1 (ko) 2013-07-30
US20070042296A1 (en) 2007-02-22
US7332254B2 (en) 2008-02-19
KR20070021966A (ko) 2007-02-23
EP1755365A1 (de) 2007-02-21
EP1755365B1 (de) 2009-05-06

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