DE602004027594D1 - Triac - Google Patents

Triac

Info

Publication number
DE602004027594D1
DE602004027594D1 DE602004027594T DE602004027594T DE602004027594D1 DE 602004027594 D1 DE602004027594 D1 DE 602004027594D1 DE 602004027594 T DE602004027594 T DE 602004027594T DE 602004027594 T DE602004027594 T DE 602004027594T DE 602004027594 D1 DE602004027594 D1 DE 602004027594D1
Authority
DE
Germany
Prior art keywords
triac
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004027594T
Other languages
English (en)
Inventor
Samuel Memard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Publication of DE602004027594D1 publication Critical patent/DE602004027594D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
DE602004027594T 2003-12-19 2004-12-14 Triac Active DE602004027594D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0351138A FR2864343A1 (fr) 2003-12-19 2003-12-19 Triac fonctionnant dans les quadrants q1 et q4

Publications (1)

Publication Number Publication Date
DE602004027594D1 true DE602004027594D1 (de) 2010-07-22

Family

ID=34508799

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004027594T Active DE602004027594D1 (de) 2003-12-19 2004-12-14 Triac

Country Status (4)

Country Link
US (1) US7262442B2 (de)
EP (1) EP1544919B8 (de)
DE (1) DE602004027594D1 (de)
FR (1) FR2864343A1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8445947B2 (en) * 2008-07-04 2013-05-21 Stmicroelectronics (Rousset) Sas Electronic circuit having a diode-connected MOS transistor with an improved efficiency
FR2982077B1 (fr) * 2011-10-26 2013-11-15 St Microelectronics Tours Sas Triac a amplification de gachette
FR3036001A1 (fr) 2015-05-05 2016-11-11 St Microelectronics Tours Sas Commutateur bidirectionnel de puissance
FR3036534A1 (fr) * 2015-05-20 2016-11-25 St Microelectronics Tours Sas Commutateur bidirectionnel de puissance a performances en commutation ameliorees
FR3049770B1 (fr) * 2016-03-31 2018-07-27 Stmicroelectronics (Tours) Sas Composant de puissance vertical
FR3049768B1 (fr) 2016-03-31 2018-07-27 Stmicroelectronics (Tours) Sas Composant de puissance protege contre les surchauffes
US10211326B2 (en) 2016-03-31 2019-02-19 Stmicroelectronics (Tours) Sas Vertical power component
FR3049769B1 (fr) * 2016-03-31 2018-07-27 Stmicroelectronics (Tours) Sas Composant de puissance vertical

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56148864A (en) * 1980-04-21 1981-11-18 Nec Corp Thyristor
DE3018542A1 (de) * 1980-05-14 1981-11-19 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb
DE3240564A1 (de) * 1982-11-03 1984-05-03 Licentia Patent-Verwaltungs-Gmbh Steuerbares halbleiterschaltelement
US4604638A (en) * 1983-05-17 1986-08-05 Kabushiki Kaisha Toshiba Five layer semiconductor device with separate insulated turn-on and turn-off gates
JPS63181376A (ja) * 1987-01-23 1988-07-26 Toshiba Corp 半導体装置
US4994884A (en) * 1987-03-31 1991-02-19 Kabushiki Kaisha Toshiba Gate-controlled bi-directional semiconductor switching device
JPH01286465A (ja) * 1988-05-13 1989-11-17 Toshiba Corp 双方向制御整流半導体装置
JPH0680821B2 (ja) * 1989-05-01 1994-10-12 株式会社東芝 高感度トライアック
FR2734429B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Module interrupteur et d'alimentation-application au demarrage d'un tube fluorescent
US6326648B1 (en) * 1999-12-20 2001-12-04 Stmicroelectronics S.A. Power switch with a controlled DI/DT
FR2834386B1 (fr) * 2001-12-28 2004-04-02 St Microelectronics Sa Interrupteur bidirectionnel commande en tension

Also Published As

Publication number Publication date
FR2864343A1 (fr) 2005-06-24
EP1544919B8 (de) 2010-08-04
US7262442B2 (en) 2007-08-28
US20050133815A1 (en) 2005-06-23
EP1544919A1 (de) 2005-06-22
EP1544919B1 (de) 2010-06-09

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