JPS56148864A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS56148864A
JPS56148864A JP5245880A JP5245880A JPS56148864A JP S56148864 A JPS56148864 A JP S56148864A JP 5245880 A JP5245880 A JP 5245880A JP 5245880 A JP5245880 A JP 5245880A JP S56148864 A JPS56148864 A JP S56148864A
Authority
JP
Japan
Prior art keywords
main
thyristor
base layer
auxiliary
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5245880A
Other languages
Japanese (ja)
Inventor
Hiroshi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5245880A priority Critical patent/JPS56148864A/en
Publication of JPS56148864A publication Critical patent/JPS56148864A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To satify both the high dv/dt withstand resistance and the high gate sensitivity of a thyristor by turning ON a slight gate current in an auxiliary thyristor and transmitting it to a main thyristor. CONSTITUTION:When a rapid rising voltage is applied between the first main electrode 9 and the second main electrode 10, a P-N junction 16 between an N type base layer 2 as a main base layer 2 and an auxiliary base layer 5 is reversely biased, and a displacement current will flow thereat. That of the displacement flowing through a P-N junction 15 will pass through the shorting region from the main base layer 3 to a plurality of main N type emitter regions 4, 4,... directly to the second main electrode 10. A main thyristor having the main N type emitter region 4 and the main base layer 3 is not conducted, and high dv/dt resistance can be obtained. An auxiliary thyristor is turned ON with a slight current flowing from the gate electrode 11 to the auxiliary thyristor, thereby turning the main thyristor ON.
JP5245880A 1980-04-21 1980-04-21 Thyristor Pending JPS56148864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5245880A JPS56148864A (en) 1980-04-21 1980-04-21 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5245880A JPS56148864A (en) 1980-04-21 1980-04-21 Thyristor

Publications (1)

Publication Number Publication Date
JPS56148864A true JPS56148864A (en) 1981-11-18

Family

ID=12915268

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5245880A Pending JPS56148864A (en) 1980-04-21 1980-04-21 Thyristor

Country Status (1)

Country Link
JP (1) JPS56148864A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0276703A2 (en) * 1987-01-26 1988-08-03 Kabushiki Kaisha Toshiba Zero-crossing type thyristor
EP1544919A1 (en) * 2003-12-19 2005-06-22 St Microelectronics S.A. Triac

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0276703A2 (en) * 1987-01-26 1988-08-03 Kabushiki Kaisha Toshiba Zero-crossing type thyristor
EP1544919A1 (en) * 2003-12-19 2005-06-22 St Microelectronics S.A. Triac
FR2864343A1 (en) * 2003-12-19 2005-06-24 St Microelectronics Sa TRIAC WORKING IN QUADRANTS Q1 AND Q4
US7262442B2 (en) 2003-12-19 2007-08-28 Stmicroelectronics S.A. Triac operating in quadrants Q1 and Q4

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