DE60115752D1 - Halbleiterlaser mit verbesserter Lichtbegrenzung und Herstellungsverfahren - Google Patents
Halbleiterlaser mit verbesserter Lichtbegrenzung und HerstellungsverfahrenInfo
- Publication number
- DE60115752D1 DE60115752D1 DE60115752T DE60115752T DE60115752D1 DE 60115752 D1 DE60115752 D1 DE 60115752D1 DE 60115752 T DE60115752 T DE 60115752T DE 60115752 T DE60115752 T DE 60115752T DE 60115752 D1 DE60115752 D1 DE 60115752D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- semiconductor laser
- improved light
- light limitation
- limitation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/11—Comprising a photonic bandgap structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000069121 | 2000-03-13 | ||
JP2000069121A JP2001257425A (ja) | 2000-03-13 | 2000-03-13 | 半導体レーザ素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60115752D1 true DE60115752D1 (de) | 2006-01-19 |
DE60115752T2 DE60115752T2 (de) | 2006-07-06 |
Family
ID=18588069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60115752T Expired - Lifetime DE60115752T2 (de) | 2000-03-13 | 2001-03-13 | Halbleiterlaser mit verbesserter Lichtbegrenzung und Herstellungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (2) | US6650672B2 (de) |
EP (1) | EP1146614B1 (de) |
JP (1) | JP2001257425A (de) |
DE (1) | DE60115752T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001281473A (ja) * | 2000-03-28 | 2001-10-10 | Toshiba Corp | フォトニクス結晶及びその製造方法、光モジュール並びに光システム |
US6735235B2 (en) * | 2002-05-10 | 2004-05-11 | Agilent Technologies, Inc. | Three-dimensional photonic crystal add-drop filter |
GB0212072D0 (en) * | 2002-05-25 | 2002-07-03 | Intense Photonics Ltd | Control of contact resistance in quantum well intermixed devices |
US7319709B2 (en) | 2002-07-23 | 2008-01-15 | Massachusetts Institute Of Technology | Creating photon atoms |
KR100939819B1 (ko) | 2003-08-27 | 2010-02-03 | 엘지전자 주식회사 | 3차원 광크리스탈을 적용한 백라이트 발광소자 |
US7250635B2 (en) * | 2004-02-06 | 2007-07-31 | Dicon Fiberoptics, Inc. | Light emitting system with high extraction efficency |
US20050173714A1 (en) * | 2004-02-06 | 2005-08-11 | Ho-Shang Lee | Lighting system with high and improved extraction efficiency |
US7132677B2 (en) * | 2004-02-13 | 2006-11-07 | Dongguk University | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same |
WO2005078512A1 (ja) * | 2004-02-17 | 2005-08-25 | The Furukawa Electric Co., Ltd. | フォトニック結晶半導体デバイスおよびその製造方法 |
US20050205883A1 (en) * | 2004-03-19 | 2005-09-22 | Wierer Jonathan J Jr | Photonic crystal light emitting device |
US7502393B2 (en) | 2004-12-02 | 2009-03-10 | Canon Kabushiki Kaisha | Light-emitting device having resonator and light source unit including the light-emitting device |
WO2006062084A1 (ja) * | 2004-12-08 | 2006-06-15 | Sumitomo Electric Industries, Ltd. | 半導体レーザ素子およびその製造方法 |
US8009953B2 (en) * | 2005-03-05 | 2011-08-30 | Kyoto University | Three-dimensional photonic crystal and its manufacturing method thereof |
JP5100146B2 (ja) * | 2006-02-28 | 2012-12-19 | キヤノン株式会社 | 光学素子及び光学素子の製造方法 |
CN100449336C (zh) * | 2006-02-28 | 2009-01-07 | 佳能株式会社 | 光学元件及制造光学元件的方法 |
JP2007251020A (ja) | 2006-03-17 | 2007-09-27 | Canon Inc | レーザ装置、レーザ装置の製造方法 |
JP5322453B2 (ja) | 2008-02-07 | 2013-10-23 | キヤノン株式会社 | 3次元フォトニック結晶発光素子 |
JP4872096B2 (ja) * | 2008-03-12 | 2012-02-08 | キヤノン株式会社 | フォトニック結晶発光素子及び発光装置 |
JP5188259B2 (ja) | 2008-05-02 | 2013-04-24 | キヤノン株式会社 | 3次元フォトニック結晶を用いた発光素子 |
JP5312159B2 (ja) * | 2009-04-08 | 2013-10-09 | キヤノン株式会社 | 3次元フォトニック結晶の製造方法および光機能素子、発光素子 |
WO2014145200A2 (en) * | 2013-03-15 | 2014-09-18 | Thomas Brindisi | Volumetric three-dimensional display with evenly-spaced elements |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5187461A (en) * | 1991-02-15 | 1993-02-16 | Karl Brommer | Low-loss dielectric resonator having a lattice structure with a resonant defect |
US5325392A (en) * | 1992-03-06 | 1994-06-28 | Nippon Telegraph And Telephone Corporation | Distributed reflector and wavelength-tunable semiconductor laser |
US5335240A (en) * | 1992-12-22 | 1994-08-02 | Iowa State University Research Foundation, Inc. | Periodic dielectric structure for production of photonic band gap and devices incorporating the same |
US5784400A (en) * | 1995-02-28 | 1998-07-21 | Massachusetts Institute Of Technology | Resonant cavities employing two dimensionally periodic dielectric materials |
US5617445A (en) * | 1995-06-07 | 1997-04-01 | Picolight Incorporated | Quantum cavity light emitting element |
JP3785503B2 (ja) * | 1995-08-25 | 2006-06-14 | 独立行政法人理化学研究所 | 半導体レーザ |
US5727013A (en) | 1995-10-27 | 1998-03-10 | Wisconsin Alumni Research Foundation | Single lobe surface emitting complex coupled distributed feedback semiconductor laser |
US5998298A (en) * | 1998-04-28 | 1999-12-07 | Sandia Corporation | Use of chemical-mechanical polishing for fabricating photonic bandgap structures |
US6134043A (en) * | 1998-08-11 | 2000-10-17 | Massachusetts Institute Of Technology | Composite photonic crystals |
US6358854B1 (en) * | 1999-04-21 | 2002-03-19 | Sandia Corporation | Method to fabricate layered material compositions |
-
2000
- 2000-03-13 JP JP2000069121A patent/JP2001257425A/ja active Pending
-
2001
- 2001-03-13 US US09/805,511 patent/US6650672B2/en not_active Expired - Fee Related
- 2001-03-13 EP EP01302305A patent/EP1146614B1/de not_active Expired - Lifetime
- 2001-03-13 DE DE60115752T patent/DE60115752T2/de not_active Expired - Lifetime
-
2003
- 2003-05-21 US US10/442,377 patent/US20030209716A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20030209716A1 (en) | 2003-11-13 |
EP1146614A3 (de) | 2003-11-19 |
US20020126721A1 (en) | 2002-09-12 |
EP1146614B1 (de) | 2005-12-14 |
US6650672B2 (en) | 2003-11-18 |
JP2001257425A (ja) | 2001-09-21 |
EP1146614A2 (de) | 2001-10-17 |
DE60115752T2 (de) | 2006-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |