DE60115752D1 - Halbleiterlaser mit verbesserter Lichtbegrenzung und Herstellungsverfahren - Google Patents

Halbleiterlaser mit verbesserter Lichtbegrenzung und Herstellungsverfahren

Info

Publication number
DE60115752D1
DE60115752D1 DE60115752T DE60115752T DE60115752D1 DE 60115752 D1 DE60115752 D1 DE 60115752D1 DE 60115752 T DE60115752 T DE 60115752T DE 60115752 T DE60115752 T DE 60115752T DE 60115752 D1 DE60115752 D1 DE 60115752D1
Authority
DE
Germany
Prior art keywords
manufacturing process
semiconductor laser
improved light
light limitation
limitation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60115752T
Other languages
English (en)
Other versions
DE60115752T2 (de
Inventor
Masahiro Kito
Masato Ishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE60115752D1 publication Critical patent/DE60115752D1/de
Publication of DE60115752T2 publication Critical patent/DE60115752T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
DE60115752T 2000-03-13 2001-03-13 Halbleiterlaser mit verbesserter Lichtbegrenzung und Herstellungsverfahren Expired - Lifetime DE60115752T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000069121 2000-03-13
JP2000069121A JP2001257425A (ja) 2000-03-13 2000-03-13 半導体レーザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE60115752D1 true DE60115752D1 (de) 2006-01-19
DE60115752T2 DE60115752T2 (de) 2006-07-06

Family

ID=18588069

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60115752T Expired - Lifetime DE60115752T2 (de) 2000-03-13 2001-03-13 Halbleiterlaser mit verbesserter Lichtbegrenzung und Herstellungsverfahren

Country Status (4)

Country Link
US (2) US6650672B2 (de)
EP (1) EP1146614B1 (de)
JP (1) JP2001257425A (de)
DE (1) DE60115752T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001281473A (ja) * 2000-03-28 2001-10-10 Toshiba Corp フォトニクス結晶及びその製造方法、光モジュール並びに光システム
US6735235B2 (en) * 2002-05-10 2004-05-11 Agilent Technologies, Inc. Three-dimensional photonic crystal add-drop filter
GB0212072D0 (en) * 2002-05-25 2002-07-03 Intense Photonics Ltd Control of contact resistance in quantum well intermixed devices
US7319709B2 (en) 2002-07-23 2008-01-15 Massachusetts Institute Of Technology Creating photon atoms
KR100939819B1 (ko) 2003-08-27 2010-02-03 엘지전자 주식회사 3차원 광크리스탈을 적용한 백라이트 발광소자
US7250635B2 (en) * 2004-02-06 2007-07-31 Dicon Fiberoptics, Inc. Light emitting system with high extraction efficency
US20050173714A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Lighting system with high and improved extraction efficiency
US7132677B2 (en) * 2004-02-13 2006-11-07 Dongguk University Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same
WO2005078512A1 (ja) * 2004-02-17 2005-08-25 The Furukawa Electric Co., Ltd. フォトニック結晶半導体デバイスおよびその製造方法
US20050205883A1 (en) * 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US7502393B2 (en) 2004-12-02 2009-03-10 Canon Kabushiki Kaisha Light-emitting device having resonator and light source unit including the light-emitting device
WO2006062084A1 (ja) * 2004-12-08 2006-06-15 Sumitomo Electric Industries, Ltd. 半導体レーザ素子およびその製造方法
US8009953B2 (en) * 2005-03-05 2011-08-30 Kyoto University Three-dimensional photonic crystal and its manufacturing method thereof
JP5100146B2 (ja) * 2006-02-28 2012-12-19 キヤノン株式会社 光学素子及び光学素子の製造方法
CN100449336C (zh) * 2006-02-28 2009-01-07 佳能株式会社 光学元件及制造光学元件的方法
JP2007251020A (ja) 2006-03-17 2007-09-27 Canon Inc レーザ装置、レーザ装置の製造方法
JP5322453B2 (ja) 2008-02-07 2013-10-23 キヤノン株式会社 ３次元フォトニック結晶発光素子
JP4872096B2 (ja) * 2008-03-12 2012-02-08 キヤノン株式会社 フォトニック結晶発光素子及び発光装置
JP5188259B2 (ja) 2008-05-02 2013-04-24 キヤノン株式会社 ３次元フォトニック結晶を用いた発光素子
JP5312159B2 (ja) * 2009-04-08 2013-10-09 キヤノン株式会社 ３次元フォトニック結晶の製造方法および光機能素子、発光素子
WO2014145200A2 (en) * 2013-03-15 2014-09-18 Thomas Brindisi Volumetric three-dimensional display with evenly-spaced elements

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187461A (en) * 1991-02-15 1993-02-16 Karl Brommer Low-loss dielectric resonator having a lattice structure with a resonant defect
US5325392A (en) * 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
US5335240A (en) * 1992-12-22 1994-08-02 Iowa State University Research Foundation, Inc. Periodic dielectric structure for production of photonic band gap and devices incorporating the same
US5784400A (en) * 1995-02-28 1998-07-21 Massachusetts Institute Of Technology Resonant cavities employing two dimensionally periodic dielectric materials
US5617445A (en) * 1995-06-07 1997-04-01 Picolight Incorporated Quantum cavity light emitting element
JP3785503B2 (ja) * 1995-08-25 2006-06-14 独立行政法人理化学研究所 半導体レーザ
US5727013A (en) 1995-10-27 1998-03-10 Wisconsin Alumni Research Foundation Single lobe surface emitting complex coupled distributed feedback semiconductor laser
US5998298A (en) * 1998-04-28 1999-12-07 Sandia Corporation Use of chemical-mechanical polishing for fabricating photonic bandgap structures
US6134043A (en) * 1998-08-11 2000-10-17 Massachusetts Institute Of Technology Composite photonic crystals
US6358854B1 (en) * 1999-04-21 2002-03-19 Sandia Corporation Method to fabricate layered material compositions

Also Published As

Publication number Publication date
US20030209716A1 (en) 2003-11-13
EP1146614A3 (de) 2003-11-19
US20020126721A1 (en) 2002-09-12
EP1146614B1 (de) 2005-12-14
US6650672B2 (en) 2003-11-18
JP2001257425A (ja) 2001-09-21
EP1146614A2 (de) 2001-10-17
DE60115752T2 (de) 2006-07-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP