DE60104907D1 - Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur - Google Patents

Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur

Info

Publication number
DE60104907D1
DE60104907D1 DE60104907T DE60104907T DE60104907D1 DE 60104907 D1 DE60104907 D1 DE 60104907D1 DE 60104907 T DE60104907 T DE 60104907T DE 60104907 T DE60104907 T DE 60104907T DE 60104907 D1 DE60104907 D1 DE 60104907D1
Authority
DE
Germany
Prior art keywords
producing
carbon nanotube
field emission
emission device
nanotube field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60104907T
Other languages
English (en)
Other versions
DE60104907T2 (de
Inventor
Hang-Woo Lee
Nae-Sung Lee
Yong-Soo Choi
Jong-Min Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung SDI Co Ltd
Original Assignee
Samsung SDI Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung SDI Co Ltd filed Critical Samsung SDI Co Ltd
Publication of DE60104907D1 publication Critical patent/DE60104907D1/de
Application granted granted Critical
Publication of DE60104907T2 publication Critical patent/DE60104907T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
DE60104907T 2000-01-07 2001-01-05 Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur Expired - Lifetime DE60104907T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2000000668 2000-01-07
KR10-2000-0000668A KR100480773B1 (ko) 2000-01-07 2000-01-07 카본 나노 튜브를 이용한 3극 전계방출소자의 제작방법

Publications (2)

Publication Number Publication Date
DE60104907D1 true DE60104907D1 (de) 2004-09-23
DE60104907T2 DE60104907T2 (de) 2005-07-14

Family

ID=19637022

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60104907T Expired - Lifetime DE60104907T2 (de) 2000-01-07 2001-01-05 Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur

Country Status (5)

Country Link
US (1) US6339281B2 (de)
EP (1) EP1115135B1 (de)
JP (1) JP2001236879A (de)
KR (1) KR100480773B1 (de)
DE (1) DE60104907T2 (de)

Families Citing this family (110)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1061554A1 (de) * 1999-06-15 2000-12-20 Iljin Nanotech Co., Ltd. Weisslichtquelle mit Kohlenstoffnanoröhren und Verfahren zur Herstellung
KR100316780B1 (ko) * 2000-02-15 2001-12-12 김순택 격벽 리브를 이용한 3극관 탄소나노튜브 전계 방출 소자및 그 제작 방법
JP3595233B2 (ja) * 2000-02-16 2004-12-02 株式会社ノリタケカンパニーリミテド 電子放出源及びその製造方法
US20050148271A1 (en) * 2000-02-25 2005-07-07 Si Diamond Technology, Inc. Nanotubes cold cathode
US6436221B1 (en) * 2001-02-07 2002-08-20 Industrial Technology Research Institute Method of improving field emission efficiency for fabricating carbon nanotube field emitters
US6649431B2 (en) * 2001-02-27 2003-11-18 Ut. Battelle, Llc Carbon tips with expanded bases grown with simultaneous application of carbon source and etchant gases
US6486599B2 (en) * 2001-03-20 2002-11-26 Industrial Technology Research Institute Field emission display panel equipped with two cathodes and an anode
US6965199B2 (en) * 2001-03-27 2005-11-15 The University Of North Carolina At Chapel Hill Coated electrode with enhanced electron emission and ignition characteristics
US20020160111A1 (en) * 2001-04-25 2002-10-31 Yi Sun Method for fabrication of field emission devices using carbon nanotube film as a cathode
TW502282B (en) * 2001-06-01 2002-09-11 Delta Optoelectronics Inc Manufacture method of emitter of field emission display
KR100763890B1 (ko) * 2001-08-06 2007-10-05 삼성에스디아이 주식회사 Ｃｎｔ를 적용한 전계방출표시소자의 제조방법
US6897603B2 (en) * 2001-08-24 2005-05-24 Si Diamond Technology, Inc. Catalyst for carbon nanotube growth
WO2003018466A2 (en) * 2001-08-24 2003-03-06 Nano-Proprietary, Inc. Catalyst for carbon nanotube growth
JP2003086085A (ja) * 2001-09-13 2003-03-20 Sony Corp 冷陰極電界電子放出素子の製造方法、及び、冷陰極電界電子放出表示装置の製造方法
KR100388433B1 (ko) * 2001-10-15 2003-06-25 한국과학기술연구원 금속 나노선의 제조방법
US6660959B2 (en) * 2001-11-21 2003-12-09 University Of Kentucky Research Foundation Processes for nanomachining using carbon nanotubes
GB2384008B (en) 2001-12-12 2005-07-20 Electrovac Method of synthesising carbon nano tubes
JP2003197131A (ja) * 2001-12-26 2003-07-11 Hitachi Ltd 平面表示装置およびその製造方法
KR100441751B1 (ko) * 2001-12-28 2004-07-27 한국전자통신연구원 전계 방출 소자의 제조 방법
KR100449071B1 (ko) 2001-12-28 2004-09-18 한국전자통신연구원 전계 방출 소자용 캐소드
US9269043B2 (en) 2002-03-12 2016-02-23 Knowm Tech, Llc Memristive neural processor utilizing anti-hebbian and hebbian technology
US7392230B2 (en) 2002-03-12 2008-06-24 Knowmtech, Llc Physical neural network liquid state machine utilizing nanotechnology
US7412428B2 (en) 2002-03-12 2008-08-12 Knowmtech, Llc. Application of hebbian and anti-hebbian learning to nanotechnology-based physical neural networks
US7398259B2 (en) 2002-03-12 2008-07-08 Knowmtech, Llc Training of a physical neural network
US6889216B2 (en) 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
US8156057B2 (en) 2003-03-27 2012-04-10 Knowm Tech, Llc Adaptive neural network utilizing nanotechnology-based components
US6831017B1 (en) 2002-04-05 2004-12-14 Integrated Nanosystems, Inc. Catalyst patterning for nanowire devices
KR100804690B1 (ko) * 2002-04-12 2008-02-18 삼성에스디아이 주식회사 냉음극 전자원과 이의 제조 방법
US7752151B2 (en) 2002-06-05 2010-07-06 Knowmtech, Llc Multilayer training in a physical neural network formed utilizing nanotechnology
KR20030097165A (ko) * 2002-06-19 2003-12-31 (주)서브나노 전계방출 표시소자의 필드 에미터 및 그 제조 방법
US6803708B2 (en) * 2002-08-22 2004-10-12 Cdream Display Corporation Barrier metal layer for a carbon nanotube flat panel display
US7827131B2 (en) 2002-08-22 2010-11-02 Knowm Tech, Llc High density synapse chip using nanoparticles
US6769945B2 (en) * 2002-08-24 2004-08-03 Industrial Technology Research Institute Method of growing isomeric carbon emitters onto triode structure of field emission display
KR100493696B1 (ko) * 2002-10-24 2005-06-02 엘지전자 주식회사 탄소 나노 튜브를 이용한 전계 방출 표시 소자의 제조 방법
US6984535B2 (en) * 2002-12-20 2006-01-10 Cdream Corporation Selective etching of a protective layer to form a catalyst layer for an electron-emitting device
US7044822B2 (en) * 2002-12-20 2006-05-16 Samsung Sdi Co., Ltd. Method of manufacturing a field emission device utilizing the sacrificial layer
WO2004063091A1 (ja) * 2003-01-09 2004-07-29 Sony Corporation 筒状炭素分子の製造方法および筒状炭素分子、記録装置の製造方法および記録装置、電界電子放出素子の製造方法および電界電子放出素子、ならびに表示装置の製造方法および表示装置
JP4161191B2 (ja) * 2003-01-09 2008-10-08 ソニー株式会社 電界電子放出素子の製造方法
US20040142560A1 (en) * 2003-01-17 2004-07-22 Cheng-Tzu Kuo Method of selective growth of carbon nano-structures on silicon substrates
KR100513727B1 (ko) * 2003-02-12 2005-09-08 삼성에스디아이 주식회사 전계방출소자의 제조방법
CN100463094C (zh) * 2003-03-26 2009-02-18 清华大学 一种场发射显示器的制作方法
CN1287413C (zh) * 2003-03-26 2006-11-29 清华大学 一种场发射显示器
US7426501B2 (en) 2003-07-18 2008-09-16 Knowntech, Llc Nanotechnology neural network methods and systems
RU2250526C1 (ru) * 2003-07-21 2005-04-20 ФГУП Научно-исследовательский институт физических проблем им. Ф.В. Лукина Эмиттер для интегральных приборов
US7239076B2 (en) * 2003-09-25 2007-07-03 General Electric Company Self-aligned gated rod field emission device and associated method of fabrication
US20050067936A1 (en) * 2003-09-25 2005-03-31 Lee Ji Ung Self-aligned gated carbon nanotube field emitter structures and associated methods of fabrication
KR20050034313A (ko) * 2003-10-09 2005-04-14 삼성에스디아이 주식회사 전계 방출 표시장치 및 그의 제조 방법
KR20060133974A (ko) * 2003-10-16 2006-12-27 더 유니버시티 오브 아크론 탄소 나노섬유 기판 상의 탄소 나노튜브
US20050140261A1 (en) * 2003-10-23 2005-06-30 Pinchas Gilad Well structure with axially aligned field emission fiber or carbon nanotube and method for making same
US7790226B2 (en) * 2003-10-27 2010-09-07 California Institute Of Technology Pyrolyzed thin film carbon
US7276285B2 (en) * 2003-12-31 2007-10-02 Honeywell International Inc. Nanotube fabrication basis
WO2005070005A2 (en) * 2004-01-23 2005-08-04 California Institute Of Technology Pyrolyzed thin film carbon
JP4529479B2 (ja) * 2004-02-27 2010-08-25 ソニー株式会社 微細構造体の製造方法および表示装置
US20050236963A1 (en) * 2004-04-15 2005-10-27 Kang Sung G Emitter structure with a protected gate electrode for an electron-emitting device
KR20050104035A (ko) * 2004-04-27 2005-11-02 삼성에스디아이 주식회사 전계방출소자
US7105428B2 (en) * 2004-04-30 2006-09-12 Nanosys, Inc. Systems and methods for nanowire growth and harvesting
US7785922B2 (en) 2004-04-30 2010-08-31 Nanosys, Inc. Methods for oriented growth of nanowires on patterned substrates
KR20050106670A (ko) * 2004-05-06 2005-11-11 삼성에스디아이 주식회사 Ｃｎｔ 전계방출소자의 제조방법
US20050255613A1 (en) * 2004-05-13 2005-11-17 Dojin Kim Manufacturing of field emission display device using carbon nanotubes
US7834530B2 (en) * 2004-05-27 2010-11-16 California Institute Of Technology Carbon nanotube high-current-density field emitters
KR100590632B1 (ko) * 2004-06-24 2006-06-19 한국기계연구원 유전영동을 이용한 나노물질의 패터닝방법
FR2872826B1 (fr) * 2004-07-07 2006-09-15 Commissariat Energie Atomique Croissance a basse temperature de nanotubes de carbone orientes
US20060043861A1 (en) * 2004-08-27 2006-03-02 Wei Liu Porous glass substrate for field emission device
US20060066217A1 (en) * 2004-09-27 2006-03-30 Son Jong W Cathode structure for field emission device
CN100490180C (zh) * 2004-10-04 2009-05-20 松下电器产业株式会社 纵向场效应晶体管及其制造方法
US20080012461A1 (en) * 2004-11-09 2008-01-17 Nano-Proprietary, Inc. Carbon nanotube cold cathode
US7502769B2 (en) 2005-01-31 2009-03-10 Knowmtech, Llc Fractal memory and computational methods and systems based on nanotechnology
US7409375B2 (en) 2005-05-23 2008-08-05 Knowmtech, Llc Plasticity-induced self organizing nanotechnology for the extraction of independent components from a data stream
US7701128B2 (en) * 2005-02-04 2010-04-20 Industrial Technology Research Institute Planar light unit using field emitters and method for fabricating the same
KR20060091521A (ko) 2005-02-15 2006-08-21 삼성에스디아이 주식회사 탄소나노튜브의 형성방법 및 이를 이용한 전계방출소자의제조방법
JP4481853B2 (ja) * 2005-03-18 2010-06-16 富士通株式会社 カーボンナノチューブデバイスの製造方法
WO2006120789A1 (ja) * 2005-05-02 2006-11-16 Public University Corporation, Osaka Prefecture University 触媒によるカーボンナノチューブの製造方法、電界放出電子源の製造方法、電界放出電子源及び電界放出型ディスプレイ
FR2886284B1 (fr) * 2005-05-30 2007-06-29 Commissariat Energie Atomique Procede de realisation de nanostructures
JP4773137B2 (ja) * 2005-05-31 2011-09-14 株式会社アルバック 冷陰極表示素子及びその作製方法
US7420396B2 (en) 2005-06-17 2008-09-02 Knowmtech, Llc Universal logic gate utilizing nanotechnology
KR20070003467A (ko) 2005-07-02 2007-01-05 삼성전자주식회사 면광원장치와 이를 포함하는 액정표시장치
US7599895B2 (en) 2005-07-07 2009-10-06 Knowm Tech, Llc Methodology for the configuration and repair of unreliable switching elements
US7326328B2 (en) * 2005-07-19 2008-02-05 General Electric Company Gated nanorod field emitter structures and associated methods of fabrication
US7279085B2 (en) * 2005-07-19 2007-10-09 General Electric Company Gated nanorod field emitter structures and associated methods of fabrication
KR101107134B1 (ko) * 2005-08-26 2012-01-31 삼성에스디아이 주식회사 전자 방출 소자, 전자 방출 디바이스 및 그 제조 방법
JP2007172925A (ja) * 2005-12-20 2007-07-05 Rohm Co Ltd 電子放出素子、およびこれを用いた電界放出型ディスプレイ
US7741197B1 (en) 2005-12-29 2010-06-22 Nanosys, Inc. Systems and methods for harvesting and reducing contamination in nanowires
JP2009522197A (ja) * 2005-12-29 2009-06-11 ナノシス・インコーポレイテッド パターン形成された基板上のナノワイヤの配向した成長のための方法
CN100442427C (zh) * 2005-12-29 2008-12-10 上海交通大学 一种阴阳微空洞电极结构
KR100796689B1 (ko) * 2006-05-19 2008-01-21 삼성에스디아이 주식회사 발광 장치 및 이 발광 장치를 백 라이트 유닛으로 사용하는액정 표시 장치
TWI334154B (en) 2006-05-19 2010-12-01 Samsung Sdi Co Ltd Light emission device and display device
US7884359B2 (en) * 2006-06-09 2011-02-08 The United States Of America As Represented By The Secretary Of The Navy Integrally gated carbon nanotube ionizer device
US20080007491A1 (en) * 2006-07-05 2008-01-10 Kuei Wen Cheng Mirror having a field emission information display
JP2010509171A (ja) * 2006-11-07 2010-03-25 ナノシス・インク． ナノワイヤー成長用システム及び方法
US7930257B2 (en) 2007-01-05 2011-04-19 Knowm Tech, Llc Hierarchical temporal memory utilizing nanotechnology
US7859036B2 (en) 2007-04-05 2010-12-28 Micron Technology, Inc. Memory devices having electrodes comprising nanowires, systems including same and methods of forming same
WO2008146974A1 (en) * 2007-05-30 2008-12-04 Airtec System Co., Ltd. Hybrid ballast for driving triode carbon nano tube lamp
KR101300570B1 (ko) * 2007-05-30 2013-08-27 삼성전자주식회사 전극, 전자 소자, 전계 효과 트랜지스터, 그 제조 방법 및탄소나노튜브 성장 방법
US20110057164A1 (en) 2007-06-18 2011-03-10 California Institute Of Technology Carbon nanotube field emission device with overhanging gate
JP5474835B2 (ja) * 2008-02-25 2014-04-16 スモルテック アーベー ナノ構造処理のための導電性補助層の形成及び選択的除去
WO2009131754A1 (en) * 2008-03-05 2009-10-29 Georgia Tech Research Corporation Cold cathodes and ion thrusters and methods of making and using same
WO2009114291A2 (en) * 2008-03-14 2009-09-17 Research Triangle Institute Faraday cup array integrated with a readout ic and method for manufacture thereof
US8623288B1 (en) 2009-06-29 2014-01-07 Nanosys, Inc. Apparatus and methods for high density nanowire growth
TW201119935A (en) * 2009-12-04 2011-06-16 Univ Nat Chiao Tung Catalytic seeding control method
JP2010092885A (ja) * 2010-01-12 2010-04-22 Ulvac Japan Ltd カソード基板及びその作製方法
CN102403304B (zh) * 2011-12-06 2016-03-16 上海集成电路研发中心有限公司 一种互连结构及其制作方法
US9058954B2 (en) 2012-02-20 2015-06-16 Georgia Tech Research Corporation Carbon nanotube field emission devices and methods of making same
KR101355029B1 (ko) * 2012-11-26 2014-02-06 한화케미칼 주식회사 잉크 조성물 및 그로 제조되는 대전방지필름
CN103854935B (zh) * 2012-12-06 2016-09-07 清华大学 场发射阴极装置及场发射器件
US10408968B2 (en) * 2013-12-31 2019-09-10 Halliburton Energy Services, Inc. Field emission ion source neutron generator
MX361393B (es) 2013-12-31 2018-12-05 Halliburton Energy Services Inc Generador de neutrones de tritio-tritio y método de registro.
US9756714B2 (en) 2013-12-31 2017-09-05 Halliburton Energy Services, Inc. Nano-emitter ion source neutron generator
CN103943441B (zh) * 2014-05-10 2016-05-04 福州大学 一种场致发射激发气体放电显示装置及其驱动方法
RU2586628C1 (ru) * 2014-12-12 2016-06-10 Открытое акционерное общество "Научно-производственное предприятие "Радий" Источник электронов с автоэлектронными эмиттерами
US10170304B1 (en) 2017-10-25 2019-01-01 Globalfoundries Inc. Self-aligned nanotube structures

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872422A (en) * 1995-12-20 1999-02-16 Advanced Technology Materials, Inc. Carbon fiber-based field emission devices
JP2873930B2 (ja) * 1996-02-13 1999-03-24 工業技術院長 カーボンナノチューブを有する炭素質固体構造体、炭素質固体構造体からなる電子線源素子用電子放出体、及び炭素質固体構造体の製造方法
JP3008852B2 (ja) * 1996-06-21 2000-02-14 日本電気株式会社 電子放出素子およびその製造方法
JP3421549B2 (ja) * 1996-09-18 2003-06-30 株式会社東芝 真空マイクロ装置
KR100365444B1 (ko) * 1996-09-18 2004-01-24 가부시끼가이샤 도시바 진공마이크로장치와이를이용한화상표시장치
JP3740295B2 (ja) * 1997-10-30 2006-02-01 キヤノン株式会社 カーボンナノチューブデバイス、その製造方法及び電子放出素子
JP2000285795A (ja) * 1999-03-31 2000-10-13 Sony Corp 電子放出源およびその製造方法ならびにディスプレイ装置
JP2000353467A (ja) * 1999-04-09 2000-12-19 Nec Corp 冷陰極装置の製造方法
US6538367B1 (en) * 1999-07-15 2003-03-25 Agere Systems Inc. Field emitting device comprising field-concentrating nanoconductor assembly and method for making the same
US6062931A (en) * 1999-09-01 2000-05-16 Industrial Technology Research Institute Carbon nanotube emitter with triode structure
JP2001126609A (ja) * 1999-10-26 2001-05-11 Futaba Corp 電子放出素子及び蛍光発光型表示器
JP2002197965A (ja) * 1999-12-21 2002-07-12 Sony Corp 電子放出装置、冷陰極電界電子放出素子及びその製造方法、並びに、冷陰極電界電子放出表示装置及びその製造方法

Also Published As

Publication number Publication date
EP1115135A1 (de) 2001-07-11
DE60104907T2 (de) 2005-07-14
KR100480773B1 (ko) 2005-04-06
US20010007783A1 (en) 2001-07-12
JP2001236879A (ja) 2001-08-31
US6339281B2 (en) 2002-01-15
KR20010068652A (ko) 2001-07-23
EP1115135B1 (de) 2004-08-18

Similar Documents

Publication Publication Date Title
DE60104907D1 (de) Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur
DE60201689D1 (de) Verfahren zur Herstellung einer Kohlenstoffnanoröhren-Feldemissionsanordnung mit Triodenstruktur
DE69917081T2 (de) Verfahren zur Herstellung einer Plasma-Anzeigevorrichtung mit guten Emissionseigenschaften
DE60322537D1 (de) Verfahren zur herstellung von kohlenstoffnanoröhren
DE60128972D1 (de) Verfahren zur Herstellung einer Mehrfachlochplatte
DE60135263D1 (de) Verfahren zur Herstellung einer magnetischen Kodiereinrichtung
DE60125755D1 (de) Verfahren zur herstellung einer flexodruckplatte
DE60126301D1 (de) Verfahren zur herstellung eines kohleschaums
DE60300022D1 (de) Feldemissionsanzeigevorrichtung mit Triodenstruktur mit Kohlenstoffnanoröhren und Verfahren zur deren Herstellung
DE60140188D1 (de) Verfahren zur herstellung einer luftdurchlässigen verbundfolie
DE60131408D1 (de) Verfahren zur herstellung einer kohlenstoffartigen folie
DE60035955D1 (de) Kohlenstoffnanoröhren-Feldemissionsanzeige mit Triodenstruktur und Verfahren zu deren Herstellung
DE60129198D1 (de) Verfahren zur Herstellung einer Kehlkopfmaske
DE60333426D1 (de) Verfahren zur Herstellung mehrwandiger Kohlenstoff-Nanoröhren
DE60100821D1 (de) Verfahren zur Herstellung einer Verbundstruktur und damit hergestellte Verbundstruktur
DE60125870D1 (de) Verfahren zur herstellung einer meta-vollaromatischen polyamidfaser
DE60218802D1 (de) Verfahren zur Herstellung einer Vorrichtung
DE60115527D1 (de) Verfahren zur Herstellung einer Reifenkarkasse
DE60321883D1 (de) Verfahren zur Herstellung einer Vorrichtung
DE602004010358D1 (de) Verfahren zur Herstellung eines Emitters aus Kohlenstoffnanoröhre
DE60129763D1 (de) Verfahren zur Herstellung einer organischen lumineszenten Vorrichtung
DE60118919D1 (de) Verfahren zur herstellung einer zelle
DE60200369D1 (de) Verfahren zur Herstellung einer Feldemissionsanzeige unter Verwendung von Kohlenstoffnanoröhren
DE60323051D1 (de) Verfahren zur Herstellung einer Vorrichtung
DE60139100D1 (de) Verfahren zur Herstellung einer Elektrodenschicht

Legal Events

Date Code Title Description
8364 No opposition during term of opposition