DE60038095D1 - Verfahren zur Herstellung einer trägerfreien Kristallschicht - Google Patents

Verfahren zur Herstellung einer trägerfreien Kristallschicht

Info

Publication number
DE60038095D1
DE60038095D1 DE60038095T DE60038095T DE60038095D1 DE 60038095 D1 DE60038095 D1 DE 60038095D1 DE 60038095 T DE60038095 T DE 60038095T DE 60038095 T DE60038095 T DE 60038095T DE 60038095 D1 DE60038095 D1 DE 60038095D1
Authority
DE
Germany
Prior art keywords
carrier
producing
crystal layer
free crystal
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60038095T
Other languages
English (en)
Other versions
DE60038095T2 (de
Inventor
Kazuto Igarashi
Yoshihiro Tsukuda
Hidemi Mitsuyasu
Hokuto Yamatsugu
Tohru Nunoi
Hiroshi Taniguchi
Koji Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE60038095D1 publication Critical patent/DE60038095D1/de
Application granted granted Critical
Publication of DE60038095T2 publication Critical patent/DE60038095T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
DE60038095T 1999-12-27 2000-12-21 Verfahren zur Herstellung einer trägerfreien Kristallschicht Expired - Lifetime DE60038095T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP36929999 1999-12-27
JP36929999 1999-12-27
JP2000371147A JP4121697B2 (ja) 1999-12-27 2000-12-06 結晶シートの製造方法およびその製造装置
JP2000371147 2000-12-06

Publications (2)

Publication Number Publication Date
DE60038095D1 true DE60038095D1 (de) 2008-04-03
DE60038095T2 DE60038095T2 (de) 2009-03-05

Family

ID=26582094

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60038095T Expired - Lifetime DE60038095T2 (de) 1999-12-27 2000-12-21 Verfahren zur Herstellung einer trägerfreien Kristallschicht

Country Status (4)

Country Link
US (1) US6596075B2 (de)
EP (1) EP1113096B1 (de)
JP (1) JP4121697B2 (de)
DE (1) DE60038095T2 (de)

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JP2002094098A (ja) * 2000-09-19 2002-03-29 Sharp Corp 結晶薄板の製造方法および結晶薄板を用いた太陽電池
JP4132786B2 (ja) * 2001-06-29 2008-08-13 シャープ株式会社 薄板製造方法および太陽電池
CN1295753C (zh) * 2001-08-09 2007-01-17 夏普株式会社 薄片制造设备、薄片制造方法和太阳能电池
JP2003128411A (ja) 2001-10-18 2003-05-08 Sharp Corp 板状シリコン、板状シリコンの製造方法および太陽電池
WO2003049162A1 (fr) * 2001-12-04 2003-06-12 Sharp Kabushiki Kaisha Procede de production d'une feuille en phase solide et batterie solaire utilisant la feuille en phase solide
WO2004003263A1 (ja) * 2002-06-28 2004-01-08 Sharp Kabushiki Kaisha 薄板製造方法、薄板製造装置および下地板
DE10362171B4 (de) * 2002-06-28 2010-04-15 Sharp Kabushiki Kaisha Verfahren und Vorrichtung zum Herstellen einer dünnen Lage
AU2003244200A1 (en) * 2002-07-03 2004-01-23 Sharp Kabushiki Kaisha Thin sheet manufacturing apparatus and thin sheet manufacturing method
WO2004025000A1 (ja) * 2002-09-10 2004-03-25 Sharp Kabushiki Kaisha 薄板製造装置および薄板製造方法
JP2004107147A (ja) * 2002-09-19 2004-04-08 Canon Inc 液相成長方法
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7572334B2 (en) * 2006-01-03 2009-08-11 Applied Materials, Inc. Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
JP4073941B2 (ja) * 2006-06-16 2008-04-09 シャープ株式会社 固相シート成長用基体および固相シートの製造方法
JP5030102B2 (ja) * 2007-10-23 2012-09-19 シャープ株式会社 シート製造方法およびシート製造用基板
JP4941448B2 (ja) * 2007-10-26 2012-05-30 豊田合成株式会社 Ｉｉｉ族窒化物半導体製造装置
US20090208770A1 (en) * 2008-02-14 2009-08-20 Ralf Jonczyk Semiconductor sheets and methods for fabricating the same
KR20100123745A (ko) 2008-02-29 2010-11-24 코닝 인코포레이티드 순수 또는 도핑된 반도체 물질의 비지지 제품을 제조하는 방법
US8475591B2 (en) * 2008-08-15 2013-07-02 Varian Semiconductor Equipment Associates, Inc. Method of controlling a thickness of a sheet formed from a melt
JP5133848B2 (ja) * 2008-10-31 2013-01-30 シャープ株式会社 下地板製造方法ならびに下地板
US7771643B1 (en) 2009-02-27 2010-08-10 Corning Incorporated Methods of making an unsupported article of semiconducting material by controlled undercooling
ES2680648T3 (es) 2009-03-09 2018-09-10 1366 Technologies Inc. Procedimientos de fabricación de cuerpos semiconductores delgados a partir de material fundido
US8540920B2 (en) 2009-05-14 2013-09-24 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material
US8398768B2 (en) * 2009-05-14 2013-03-19 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising semiconducting material
US20110037195A1 (en) * 2009-07-16 2011-02-17 Hildeman Gregory J Continuous Cast Silicon Strip Apparatus and Method
US8480803B2 (en) 2009-10-30 2013-07-09 Corning Incorporated Method of making an article of semiconducting material
US8591795B2 (en) * 2009-12-04 2013-11-26 Corning Incorporated Method of exocasting an article of semiconducting material
US8242033B2 (en) * 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials
US20110305891A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent productivity and surface quality using continuous casting
US20110303290A1 (en) * 2010-06-14 2011-12-15 Korea Institute Of Energy Research Method and apparatus for manufacturing silicon substrate with excellent surface quality using inert gas blowing
KR101186465B1 (ko) 2011-01-20 2012-09-27 오씨아이 주식회사 태양전지용 다결정 실리콘 웨이퍼 제조를 위한 기판 냉각장치
US20120299218A1 (en) * 2011-05-27 2012-11-29 Glen Bennett Cook Composite active molds and methods of making articles of semiconducting material
US20130052802A1 (en) * 2011-08-22 2013-02-28 Glen Bennett Cook Mold thermophysical properties for thickness uniformity optimization of exocast sheet
US20130108780A1 (en) * 2011-11-02 2013-05-02 Battelle Memorial Institute Method of making a thin film
CN102646755A (zh) * 2012-04-23 2012-08-22 锦州新世纪石英（集团）有限公司 多晶硅薄膜电池片的生产工艺
US20140097432A1 (en) * 2012-10-09 2014-04-10 Corning Incorporated Sheet of semiconducting material, laminate, and system and methods for forming same
KR20140110163A (ko) * 2013-03-04 2014-09-17 삼성에스디아이 주식회사 태양전지용 성막 장치
US20150040819A1 (en) * 2013-08-08 2015-02-12 Energy Materials Research, LLC System and method for forming a silicon wafer

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Also Published As

Publication number Publication date
JP4121697B2 (ja) 2008-07-23
EP1113096B1 (de) 2008-02-20
DE60038095T2 (de) 2009-03-05
US6596075B2 (en) 2003-07-22
EP1113096A1 (de) 2001-07-04
JP2001247396A (ja) 2001-09-11
US20010004874A1 (en) 2001-06-28

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