DE60033800D1 - Gan-halbleiterverbundkristall-wachsmethode und halbleitersubstrat - Google Patents

Gan-halbleiterverbundkristall-wachsmethode und halbleitersubstrat

Info

Publication number
DE60033800D1
DE60033800D1 DE60033800T DE60033800T DE60033800D1 DE 60033800 D1 DE60033800 D1 DE 60033800D1 DE 60033800 T DE60033800 T DE 60033800T DE 60033800 T DE60033800 T DE 60033800T DE 60033800 D1 DE60033800 D1 DE 60033800D1
Authority
DE
Germany
Prior art keywords
composite crystal
semiconductor substrate
semiconductor
waxing method
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60033800T
Other languages
English (en)
Other versions
DE60033800T2 (de
Inventor
Hiroaki Okagawa
Masahiro Koto
Kazuyuki Tadatomo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Original Assignee
Mitsubishi Cable Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Cable Industries Ltd filed Critical Mitsubishi Cable Industries Ltd
Publication of DE60033800D1 publication Critical patent/DE60033800D1/de
Application granted granted Critical
Publication of DE60033800T2 publication Critical patent/DE60033800T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02642—Mask materials other than SiO2 or SiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60033800T 1999-03-23 2000-03-21 Gan-halbleiterverbundkristall-wachsmethode und halbleitersubstrat Expired - Lifetime DE60033800T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP7723999 1999-03-23
JP7723999 1999-03-23
JP2000037577A JP3550070B2 (ja) 1999-03-23 2000-02-16 ＧａＮ系化合物半導体結晶、その成長方法及び半導体基材
JP2000037577 2000-02-16
PCT/JP2000/001718 WO2000057460A1 (fr) 1999-03-23 2000-03-21 PROCEDE DE CROISSANCE DE CRISTAUX SEMICONDUCTEURS COMPOSES DE GaN, ET SUBSTRAT DE SEMICONDUCTEUR

Publications (2)

Publication Number Publication Date
DE60033800D1 true DE60033800D1 (de) 2007-04-19
DE60033800T2 DE60033800T2 (de) 2007-11-15

Family

ID=26418343

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60033800T Expired - Lifetime DE60033800T2 (de) 1999-03-23 2000-03-21 Gan-halbleiterverbundkristall-wachsmethode und halbleitersubstrat

Country Status (6)

Country Link
US (2) US6700179B1 (de)
EP (1) EP1178523B1 (de)
JP (1) JP3550070B2 (de)
KR (1) KR100635313B1 (de)
DE (1) DE60033800T2 (de)
WO (1) WO2000057460A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3112163B2 (ja) * 1999-03-19 2000-11-27 日本電気株式会社 結晶成長方法およびその結晶体
JP3809464B2 (ja) 1999-12-14 2006-08-16 独立行政法人理化学研究所 半導体層の形成方法
US7615780B2 (en) * 2000-10-23 2009-11-10 General Electric Company DNA biosensor and methods for making and using the same
US7102158B2 (en) * 2000-10-23 2006-09-05 General Electric Company Light-based system for detecting analytes
JP3988018B2 (ja) 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置
JP4644942B2 (ja) * 2001-01-18 2011-03-09 ソニー株式会社 結晶膜、結晶基板および半導体装置の製造方法
JP4631214B2 (ja) * 2001-06-05 2011-02-16 ソニー株式会社 窒化物半導体膜の製造方法
JP3544958B2 (ja) * 2001-06-27 2004-07-21 士郎 酒井 窒化ガリウム系化合物半導体の製造方法
JP2003068655A (ja) * 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法
EP1291904A3 (de) * 2001-09-10 2009-10-07 FUJIFILM Corporation GaN-Substrat, das auf einer feinen diskreten Löcher aufweisenden GaN-Schicht gebildet wurde, die durch selektives Wachstum hergestellt worden ist
TW561526B (en) * 2001-12-21 2003-11-11 Aixtron Ag Method for depositing III-V semiconductor layers on a non-III-V substrate
JP2004311986A (ja) * 2003-03-25 2004-11-04 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2004363500A (ja) * 2003-06-06 2004-12-24 Satoru Tanaka 窒化物系化合物半導体の製造方法および窒化物系化合物半導体
JP4581478B2 (ja) * 2004-05-12 2010-11-17 日亜化学工業株式会社 窒化物半導体の製造方法
CN100338790C (zh) * 2005-09-30 2007-09-19 晶能光电（江西）有限公司 在硅衬底上制备铟镓铝氮薄膜的方法
US20070086916A1 (en) * 2005-10-14 2007-04-19 General Electric Company Faceted structure, article, sensor device, and method
US8425858B2 (en) * 2005-10-14 2013-04-23 Morpho Detection, Inc. Detection apparatus and associated method
TWI408264B (zh) * 2005-12-15 2013-09-11 Saint Gobain Cristaux & Detecteurs 低差排密度氮化鎵（ＧａＮ）之生長方法
US9406505B2 (en) * 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
CN101743618B (zh) * 2007-07-26 2012-11-21 硅绝缘体技术有限公司 外延方法和通过该方法生长的模板
TWI415295B (zh) * 2008-06-24 2013-11-11 Advanced Optoelectronic Tech 半導體元件的製造方法及其結構
KR101023173B1 (ko) * 2009-01-22 2011-03-18 한양대학교 산학협력단 에피택셜 성장 방법
KR101021775B1 (ko) * 2009-01-29 2011-03-15 한양대학교 산학협력단 에피택셜 성장 방법 및 이를 이용한 에피택셜층 적층 구조
KR101636032B1 (ko) * 2009-08-28 2016-07-05 서울바이오시스 주식회사 고전위 밀도의 중간층을 갖는 발광 다이오드 및 그것을 제조하는 방법
WO2012066804A1 (ja) * 2010-11-19 2012-05-24 京セラ株式会社 半導体基板の製造方法、および発光素子
US8728938B2 (en) 2012-06-13 2014-05-20 Ostendo Technologies, Inc. Method for substrate pretreatment to achieve high-quality III-nitride epitaxy

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US5650198A (en) * 1995-08-18 1997-07-22 The Regents Of The University Of California Defect reduction in the growth of group III nitrides
JP3987898B2 (ja) * 1996-09-03 2007-10-10 独立行政法人理化学研究所 量子ドット形成方法及び量子ドット構造体
JP3721674B2 (ja) * 1996-12-05 2005-11-30 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体基板の製造方法
US6348096B1 (en) * 1997-03-13 2002-02-19 Nec Corporation Method for manufacturing group III-V compound semiconductors
EP0874405A3 (de) * 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. Element auf Basis von GaN mit niedriger Versetzungsdichte, seine Verwendung und Herstellungsverfahren
CA2258080C (en) * 1997-04-11 2007-06-05 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device
JP2000077336A (ja) * 1998-08-28 2000-03-14 Sony Corp 半導体成長用基板およびその製造方法ならびに半導体装置
JP2000150388A (ja) 1998-11-05 2000-05-30 Fuji Electric Co Ltd Ｉｉｉ族窒化物半導体薄膜およびその製造方法
US6534332B2 (en) * 2000-04-21 2003-03-18 The Regents Of The University Of California Method of growing GaN films with a low density of structural defects using an interlayer

Also Published As

Publication number Publication date
WO2000057460A1 (fr) 2000-09-28
JP2000340511A (ja) 2000-12-08
EP1178523A1 (de) 2002-02-06
EP1178523B1 (de) 2007-03-07
US6794210B2 (en) 2004-09-21
US6700179B1 (en) 2004-03-02
KR20010108374A (ko) 2001-12-07
KR100635313B1 (ko) 2006-10-18
JP3550070B2 (ja) 2004-08-04
EP1178523A4 (de) 2004-09-29
US20040094084A1 (en) 2004-05-20
DE60033800T2 (de) 2007-11-15

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Owner name: MITSUBISHI CHEMICAL CORP., TOKIO/TOKYO, JP