DE60031823D1 - Drahtsäge und schneidverfahren - Google Patents

Drahtsäge und schneidverfahren

Info

Publication number
DE60031823D1
DE60031823D1 DE60031823T DE60031823T DE60031823D1 DE 60031823 D1 DE60031823 D1 DE 60031823D1 DE 60031823 T DE60031823 T DE 60031823T DE 60031823 T DE60031823 T DE 60031823T DE 60031823 D1 DE60031823 D1 DE 60031823D1
Authority
DE
Germany
Prior art keywords
cutting process
wire saw
saw
wire
cutting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60031823T
Other languages
English (en)
Other versions
DE60031823T2 (de
Inventor
Yasuharu Ariga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE60031823D1 publication Critical patent/DE60031823D1/de
Publication of DE60031823T2 publication Critical patent/DE60031823T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0076Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0064Devices for the automatic drive or the program control of the machines
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
DE60031823T 1999-01-20 2000-01-14 Drahtsäge und schneidverfahren Expired - Lifetime DE60031823T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1168099 1999-01-20
JP1168099 1999-01-20
PCT/JP2000/000155 WO2000043162A1 (fr) 1999-01-20 2000-01-14 Fil helicoidal et procede de decoupe

Publications (2)

Publication Number Publication Date
DE60031823D1 true DE60031823D1 (de) 2006-12-28
DE60031823T2 DE60031823T2 (de) 2007-09-13

Family

ID=11784725

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60031823T Expired - Lifetime DE60031823T2 (de) 1999-01-20 2000-01-14 Drahtsäge und schneidverfahren

Country Status (6)

Country Link
US (1) US6652356B1 (de)
EP (1) EP1097782B1 (de)
JP (1) JP3734018B2 (de)
KR (1) KR100607188B1 (de)
DE (1) DE60031823T2 (de)
WO (1) WO2000043162A1 (de)

Families Citing this family (42)

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DE10122628B4 (de) * 2001-05-10 2007-10-11 Siltronic Ag Verfahren zum Abtrennen von Scheiben von einem Werkstück
US20030170948A1 (en) * 2002-03-07 2003-09-11 Memc Electronic Materials, Inc. Method and apparatus for slicing semiconductor wafers
GB2414204B (en) * 2004-05-18 2006-04-12 David Ainsworth Hukin Abrasive wire sawing
US7878883B2 (en) 2006-01-26 2011-02-01 Memc Electronics Materials, Inc. Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control
JP4839137B2 (ja) * 2006-06-05 2011-12-21 トーヨーエイテック株式会社 ワイヤソー
JP4791306B2 (ja) * 2006-09-22 2011-10-12 信越半導体株式会社 切断方法
JP4991229B2 (ja) * 2006-09-22 2012-08-01 信越半導体株式会社 切断方法およびエピタキシャルウエーハの製造方法
JP4965949B2 (ja) * 2006-09-22 2012-07-04 信越半導体株式会社 切断方法
JP4816511B2 (ja) * 2007-03-06 2011-11-16 信越半導体株式会社 切断方法およびワイヤソー装置
JP5003294B2 (ja) * 2007-06-08 2012-08-15 信越半導体株式会社 切断方法
JP2009029078A (ja) * 2007-07-30 2009-02-12 Toyo Advanced Technologies Co Ltd ワイヤーソー装置
KR101486302B1 (ko) * 2007-12-19 2015-01-26 신에쯔 한도타이 가부시키가이샤 와이어 쏘에 의한 워크의 절단 방법 및 와이어 쏘
US20090199836A1 (en) * 2008-02-11 2009-08-13 Memc Electronic Materials, Inc. Carbon nanotube reinforced wiresaw beam used in wiresaw slicing of ingots into wafers
JP5007706B2 (ja) * 2008-06-30 2012-08-22 信越半導体株式会社 ワークの切断方法
JP2010029955A (ja) * 2008-07-25 2010-02-12 Shin Etsu Handotai Co Ltd ワイヤソーの運転再開方法及びワイヤソー
JP2010030074A (ja) * 2008-07-25 2010-02-12 Nippon Fuasutemu Kk ワイヤーソー切断装置
JP5151851B2 (ja) * 2008-09-19 2013-02-27 信越半導体株式会社 バンドソー切断装置及びインゴットの切断方法
US8065995B2 (en) * 2008-11-25 2011-11-29 Cambridge Energy Resources Inc Method and apparatus for cutting and cleaning wafers in a wire saw
US8261730B2 (en) * 2008-11-25 2012-09-11 Cambridge Energy Resources Inc In-situ wafer processing system and method
JP5515593B2 (ja) * 2009-10-07 2014-06-11 株式会社Sumco ワイヤーソーによるシリコンインゴットの切断方法およびワイヤーソー
KR20120037576A (ko) * 2010-10-12 2012-04-20 주식회사 엘지실트론 단결정 잉곳 절단장치 및 단결정 잉곳 절단방법
DE102011008400B4 (de) 2011-01-12 2014-07-10 Siltronic Ag Verfahren zur Kühlung eines Werkstückes aus Halbleitermaterial beim Drahtsägen
DE102011005948B4 (de) * 2011-03-23 2012-10-31 Siltronic Ag Verfahren zum Abtrennen von Scheiben von einem Werkstück
DE102011005949B4 (de) * 2011-03-23 2012-10-31 Siltronic Ag Verfahren zum Abtrennen von Scheiben von einem Werkstück
JP5427822B2 (ja) * 2011-04-05 2014-02-26 ジルトロニック アクチエンゲゼルシャフト ワイヤーソーによるワークの切断方法
CN102189611B (zh) * 2011-04-15 2013-11-27 浙江德圣龙新材料科技有限公司 用于太阳能硅片线切割的等密度砂浆切割方法
CN102241083A (zh) * 2011-07-12 2011-11-16 浙江德圣龙新材料科技有限公司 用于太阳能硅片线切割的等粘度砂浆切割方法及装置
US20130144421A1 (en) * 2011-12-01 2013-06-06 Memc Electronic Materials, Spa Systems For Controlling Temperature Of Bearings In A Wire Saw
TWI567812B (zh) * 2011-12-01 2017-01-21 Memc電子材料公司 用於控制在一線鋸中經切片之晶圓之表面輪廓之系統及方法
DE102012201938B4 (de) * 2012-02-09 2015-03-05 Siltronic Ag Verfahren zum gleichzeitigen Trennen einer Vielzahl von Scheiben von einem Werkstück
JP5954251B2 (ja) * 2013-05-02 2016-07-20 信越半導体株式会社 ウェーハの面取り加工装置及びウェーハの面取り加工方法
KR101540568B1 (ko) * 2014-01-06 2015-07-31 주식회사 엘지실트론 와이어 쏘 장치 및 방법
JP2016058675A (ja) * 2014-09-12 2016-04-21 株式会社東芝 研磨装置および半導体ウェハの研磨方法
CN104290206A (zh) * 2014-09-18 2015-01-21 苏州市汇峰机械设备有限公司 一种线切割机砂浆装置
KR101710927B1 (ko) * 2015-06-08 2017-02-28 주식회사 엘지실트론 잉곳 절단 장치
US9978582B2 (en) * 2015-12-16 2018-05-22 Ostendo Technologies, Inc. Methods for improving wafer planarity and bonded wafer assemblies made from the methods
JP7020286B2 (ja) * 2018-05-15 2022-02-16 信越半導体株式会社 インゴットの切断方法及びワイヤーソー
DE102018221922A1 (de) * 2018-12-17 2020-06-18 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium
JP7427921B2 (ja) * 2019-11-12 2024-02-06 株式会社Sumco 半導体インゴットのスライシング加工条件決定方法および半導体ウェーハの製造方法
EP3858569A1 (de) * 2020-01-28 2021-08-04 Siltronic AG Verfahren zum abtrennen einer vielzahl von scheiben von werkstücken mittels einer drahtsäge während einer abfolge von abtrennvorgängen
CN111531722A (zh) * 2020-05-28 2020-08-14 广州市黄埔建筑工程总公司 基坑支护支撑梁绳锯切割拆除方法
US11717930B2 (en) * 2021-05-31 2023-08-08 Siltronic Corporation Method for simultaneously cutting a plurality of disks from a workpiece

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01306171A (ja) * 1988-06-02 1989-12-11 Osaka Titanium Co Ltd 切削加工法およびワイヤソーマシン
JP2673544B2 (ja) * 1988-06-14 1997-11-05 株式会社日平トヤマ 脆性材料の切断方法
JP2516717B2 (ja) * 1991-11-29 1996-07-24 信越半導体株式会社 ワイヤソ―及びその切断方法
CH687301A5 (fr) * 1992-01-22 1996-11-15 W S Technologies Ltd Dispositif de sciage par fil.
JP2722975B2 (ja) * 1992-11-19 1998-03-09 住友金属工業株式会社 マルチワイヤソーによる切断方法
JP2967896B2 (ja) * 1993-06-18 1999-10-25 信越化学工業株式会社 ウエーハの製造方法
JP2885270B2 (ja) * 1995-06-01 1999-04-19 信越半導体株式会社 ワイヤーソー装置及びワークの切断方法
JPH0985737A (ja) * 1995-09-22 1997-03-31 Toray Eng Co Ltd ワイヤ式切断装置
JPH10138231A (ja) 1996-11-07 1998-05-26 Toshiba Ceramics Co Ltd ワイヤソー
JPH10217036A (ja) * 1997-01-29 1998-08-18 Komatsu Electron Metals Co Ltd 半導体結晶棒の切断装置及び切断方法
JP3637740B2 (ja) * 1997-08-25 2005-04-13 三菱住友シリコン株式会社 ワイヤソーおよびインゴット切断方法
JPH11216656A (ja) * 1998-01-30 1999-08-10 Toshiba Ceramics Co Ltd ワイヤーソーによるワーク切断加工方法
JPH11221748A (ja) 1998-02-06 1999-08-17 Toray Eng Co Ltd ワイヤソー

Also Published As

Publication number Publication date
JP3734018B2 (ja) 2006-01-11
DE60031823T2 (de) 2007-09-13
KR100607188B1 (ko) 2006-08-01
EP1097782A1 (de) 2001-05-09
EP1097782A4 (de) 2005-05-18
WO2000043162A1 (fr) 2000-07-27
EP1097782B1 (de) 2006-11-15
US6652356B1 (en) 2003-11-25
KR20010092236A (ko) 2001-10-24

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Inventor name: ARIGA, YASUHARU, NISHISHIRAKAWA, FUKUSHIMA, JP

8364 No opposition during term of opposition