DE59207732D1 - Monolithisch integrierte schaltungsanordnung - Google Patents
Monolithisch integrierte schaltungsanordnungInfo
- Publication number
- DE59207732D1 DE59207732D1 DE59207732T DE59207732T DE59207732D1 DE 59207732 D1 DE59207732 D1 DE 59207732D1 DE 59207732 T DE59207732 T DE 59207732T DE 59207732 T DE59207732 T DE 59207732T DE 59207732 D1 DE59207732 D1 DE 59207732D1
- Authority
- DE
- Germany
- Prior art keywords
- integrated circuit
- circuit arrangement
- monolithically integrated
- monolithically
- arrangement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE59207732T DE59207732D1 (de) | 1991-06-20 | 1992-06-10 | Monolithisch integrierte schaltungsanordnung |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4120394A DE4120394A1 (de) | 1991-06-20 | 1991-06-20 | Monolithisch integrierte schaltungsanordnung |
DE59207732T DE59207732D1 (de) | 1991-06-20 | 1992-06-10 | Monolithisch integrierte schaltungsanordnung |
PCT/DE1992/000479 WO1993000709A1 (de) | 1991-06-20 | 1992-06-10 | Monolithisch integrierte schaltungsanordnung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE59207732D1 true DE59207732D1 (de) | 1997-01-30 |
Family
ID=6434387
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4120394A Withdrawn DE4120394A1 (de) | 1991-06-20 | 1991-06-20 | Monolithisch integrierte schaltungsanordnung |
DE59207732T Expired - Fee Related DE59207732D1 (de) | 1991-06-20 | 1992-06-10 | Monolithisch integrierte schaltungsanordnung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE4120394A Withdrawn DE4120394A1 (de) | 1991-06-20 | 1991-06-20 | Monolithisch integrierte schaltungsanordnung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5432371A (de) |
EP (1) | EP0591476B1 (de) |
JP (1) | JPH06508958A (de) |
DE (2) | DE4120394A1 (de) |
ES (1) | ES2095628T3 (de) |
WO (1) | WO1993000709A1 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5453390A (en) * | 1992-03-30 | 1995-09-26 | Nippondenso Co., Ltd. | Method of producing semiconductor device with current detecting function |
US5372955A (en) * | 1993-08-02 | 1994-12-13 | United Microelectronics Corporation | Method of making a device with protection from short circuits between P and N wells |
US5510747A (en) * | 1993-11-30 | 1996-04-23 | Siliconix Incorporated | Gate drive technique for a bidirectional blocking lateral MOSFET |
EP0704889A3 (de) * | 1994-09-29 | 1998-10-21 | Siemens Aktiengesellschaft | Leistungshalbleiterbauelement mit monolithisch integriertem Messwiderstand und Verfahren zu dessen Herstellung |
JP3485655B2 (ja) * | 1994-12-14 | 2004-01-13 | 株式会社ルネサステクノロジ | 複合型mosfet |
JP3121618B2 (ja) * | 1995-04-06 | 2001-01-09 | インダストリアル テクノロジー リサーチ インスティチュート | 多重セルトランジスタのためのn辺多角形セルレイアウト |
US5602046A (en) * | 1996-04-12 | 1997-02-11 | National Semiconductor Corporation | Integrated zener diode protection structures and fabrication methods for DMOS power devices |
DE59709662D1 (de) * | 1996-05-21 | 2003-05-08 | Infineon Technologies Ag | MOSFET mit Temperaturschutz |
DE69834315T2 (de) | 1998-02-10 | 2007-01-18 | Stmicroelectronics S.R.L., Agrate Brianza | Integrierte Schaltung mit einem VDMOS-Transistor, der gegen Überspannungen zwischen Source und Gate geschützt ist |
DE19823768A1 (de) * | 1998-05-28 | 1999-12-02 | Bosch Gmbh Robert | Smartpower-Bauelement |
US6804100B2 (en) | 1999-12-31 | 2004-10-12 | Nokia Mobile Phones, Ltd. | Method and apparatus for protection of batteries |
JP2001274402A (ja) * | 2000-03-24 | 2001-10-05 | Toshiba Corp | パワー半導体装置 |
CN100421182C (zh) * | 2003-02-26 | 2008-09-24 | 旺宏电子股份有限公司 | 高压输入垫的静电放电保护装置及方法 |
JP2005043672A (ja) * | 2003-07-22 | 2005-02-17 | Toshiba Matsushita Display Technology Co Ltd | アレイ基板およびその製造方法 |
US20070290261A1 (en) * | 2006-06-15 | 2007-12-20 | System General Corp. | Self-driven ldmos transistor |
DE102006047244B4 (de) * | 2006-10-04 | 2018-01-18 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einem monokristallinen Halbleiterkörper und Verfahren zur Herstellung desselben |
JP2010118548A (ja) * | 2008-11-13 | 2010-05-27 | Mitsubishi Electric Corp | 半導体装置 |
JP5367396B2 (ja) * | 2009-02-06 | 2013-12-11 | ラピスセミコンダクタ株式会社 | 半導体装置 |
CN102334190B (zh) | 2009-04-30 | 2014-05-14 | 三菱电机株式会社 | 半导体装置及其制造方法 |
JP6641161B2 (ja) * | 2015-11-18 | 2020-02-05 | 株式会社 日立パワーデバイス | 半導体装置、およびそれを用いたオルタネータ |
US11417644B2 (en) | 2020-06-17 | 2022-08-16 | Macom Technology Solutions Holdings, Inc. | Integration of multiple discrete GaN devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4313768A (en) * | 1978-04-06 | 1982-02-02 | Harris Corporation | Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate |
IT1213411B (it) * | 1986-12-17 | 1989-12-20 | Sgs Microelettronica Spa | Struttura mos di potenza con dispositivo di protezione contro le sovratensioni e processo per lasua fabbricazione. |
US4990976A (en) * | 1987-11-24 | 1991-02-05 | Nec Corporation | Semiconductor device including a field effect transistor having a protective diode between source and drain thereof |
US4893212A (en) * | 1988-12-20 | 1990-01-09 | North American Philips Corp. | Protection of power integrated circuits against load voltage surges |
US5023692A (en) * | 1989-12-07 | 1991-06-11 | Harris Semiconductor Patents, Inc. | Power MOSFET transistor circuit |
JP2633746B2 (ja) * | 1991-05-27 | 1997-07-23 | 株式会社東芝 | 半導体装置 |
-
1991
- 1991-06-20 DE DE4120394A patent/DE4120394A1/de not_active Withdrawn
-
1992
- 1992-06-10 JP JP4510107A patent/JPH06508958A/ja active Pending
- 1992-06-10 DE DE59207732T patent/DE59207732D1/de not_active Expired - Fee Related
- 1992-06-10 US US08/167,839 patent/US5432371A/en not_active Expired - Fee Related
- 1992-06-10 ES ES93901021T patent/ES2095628T3/es not_active Expired - Lifetime
- 1992-06-10 EP EP93901021A patent/EP0591476B1/de not_active Expired - Lifetime
- 1992-06-10 WO PCT/DE1992/000479 patent/WO1993000709A1/de active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US5432371A (en) | 1995-07-11 |
ES2095628T3 (es) | 1997-02-16 |
EP0591476B1 (de) | 1996-12-18 |
JPH06508958A (ja) | 1994-10-06 |
WO1993000709A1 (de) | 1993-01-07 |
EP0591476A1 (de) | 1994-04-13 |
DE4120394A1 (de) | 1992-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |